Pagina 133 - Transistor - FET, MOSFET - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - RF

Record 3.855
Pagina  133/138
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTVA093002NDV1R5XUMA1
Infineon Technologies

IC RF FET LDMOS 300W PG-HB1SOF-4

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.680
-
-
-
-
-
-
-
-
-
-
PTFB192557SHV1XWSA1
Infineon Technologies

IC FET RF LDMOS H-34288G-4/2

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.35A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: H-34288G-4/2
  • Supplier Device Package: H-34288G-4/2
pacchetto: H-34288G-4/2
Azione7.104
1.99GHz
19dB
28V
-
-
1.35A
60W
65V
H-34288G-4/2
H-34288G-4/2
MAGX-000245-014000
M/A-Com Technology Solutions

TRANSISTOR RF 14W GAN

  • Transistor Type: HEMT
  • Frequency: 2.5GHz
  • Gain: 15.2dB
  • Voltage - Test: 50V
  • Current Rating: 800mA
  • Noise Figure: -
  • Current - Test: 15mA
  • Power - Output: 14W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.544
2.5GHz
15.2dB
50V
800mA
-
15mA
14W
65V
-
-
VMMK-1225-TR2G
Broadcom Limited

FET RF 5V 12GHZ 0402

  • Transistor Type: E-pHEMT
  • Frequency: 12GHz
  • Gain: 11dB
  • Voltage - Test: 2V
  • Current Rating: 50mA
  • Noise Figure: 1dB
  • Current - Test: 20mA
  • Power - Output: -
  • Voltage - Rated: 5V
  • Package / Case: 0402 (1005 Metric)
  • Supplier Device Package: 0402
pacchetto: 0402 (1005 Metric)
Azione5.920
12GHz
11dB
2V
50mA
1dB
20mA
-
5V
0402 (1005 Metric)
0402
hot MRF6VP41KHR7
NXP

FET RF 2CH 110V 450MHZ NI-1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 450MHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
pacchetto: NI-1230
Azione4.864
450MHz
20dB
50V
-
-
150mA
1000W
110V
NI-1230
NI-1230
MRF7S21110HSR5
NXP

FET RF 65V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 17.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 33W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
pacchetto: NI-780S
Azione5.504
2.17GHz
17.3dB
28V
-
-
1.1A
33W
65V
NI-780S
NI-780S
hot MRF7S21110HR3
NXP

FET RF 65V 2.17GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 17.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 33W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
pacchetto: NI-780
Azione4.528
2.17GHz
17.3dB
28V
-
-
1.1A
33W
65V
NI-780
NI-780
J310RLRPG
ON Semiconductor

JFET N-CH 25V 60MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: 16dB
  • Voltage - Test: 10V
  • Current Rating: 60mA
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.296
100MHz
16dB
10V
60mA
-
10mA
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
SD2941-10
STMicroelectronics

TRANS RF N-CH HF/VHF/UHF M174

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 15.8dB
  • Voltage - Test: 50V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 175W
  • Voltage - Rated: 130V
  • Package / Case: M174
  • Supplier Device Package: M174
pacchetto: M174
Azione6.512
175MHz
15.8dB
50V
20A
-
250mA
175W
130V
M174
M174
GTVA261701FAV1R0XTMA1
Infineon Technologies

GAN SIC

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.448
-
-
-
-
-
-
-
-
-
-
MRF6V14300HR5
NXP

FET RF 100V 1.4GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 1.4GHz
  • Gain: 18dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 330W
  • Voltage - Rated: 100V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
pacchetto: NI-780
Azione6.672
1.4GHz
18dB
50V
-
-
150mA
330W
100V
NI-780
NI-780
BLC8G20LS-400AVZ
Ampleon USA Inc.

RF FET LDMOS 65V 15.5DB SOT12583

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 15.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 85W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1258-3
  • Supplier Device Package: DFM6
pacchetto: SOT-1258-3
Azione3.088
1.81GHz ~ 1.88GHz
15.5dB
32V
-
-
800mA
85W
65V
SOT-1258-3
DFM6
BLF6G15LS-250PBRN:
Ampleon USA Inc.

RF FET 65V 18.5DB SOT1110B

  • Transistor Type: -
  • Frequency: 1.47GHz ~ 1.51GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 64A
  • Noise Figure: -
  • Current - Test: 1.41A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1110B
  • Supplier Device Package: LDMOST
pacchetto: SOT-1110B
Azione4.320
1.47GHz ~ 1.51GHz
18.5dB
28V
64A
-
1.41A
60W
65V
SOT-1110B
LDMOST
A2T26H165-24SR3
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.5GHz
  • Gain: 14.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4L2L
  • Supplier Device Package: NI-780S-4L2L
pacchetto: NI-780S-4L2L
Azione4.768
2.5GHz
14.7dB
28V
-
-
400mA
32W
65V
NI-780S-4L2L
NI-780S-4L2L
BLF10M6LS160U
Ampleon USA Inc.

RF FET LDMOS 65V 22.5DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 922.5MHz ~ 957.5MHz
  • Gain: 22.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: SOT-502B
Azione4.576
922.5MHz ~ 957.5MHz
22.5dB
32V
-
-
1.2A
32W
65V
SOT-502B
SOT502B
AFT20P060-4GNR3
NXP

FET RF 2CH 65V 2.17GHZ OM780-4GW

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 18.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 6.3W
  • Voltage - Rated: 65V
  • Package / Case: OM-780G-4L
  • Supplier Device Package: OM-780G-4L
pacchetto: OM-780G-4L
Azione3.920
2.17GHz
18.9dB
28V
-
-
450mA
6.3W
65V
OM-780G-4L
OM-780G-4L
PD84001
STMicroelectronics

FET RF 18V 870MHZ

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 15dB
  • Voltage - Test: 7.5V
  • Current Rating: 1.5A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 30dBm
  • Voltage - Rated: 18V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacchetto: TO-243AA
Azione6.624
870MHz
15dB
7.5V
1.5A
-
50mA
30dBm
18V
TO-243AA
SOT-89
NPT2021
M/A-Com Technology Solutions

HEMT N-CH 48V 50W DC-2.2GHZ

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 2.2GHz
  • Gain: 15dB
  • Voltage - Test: 48V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 50W
  • Voltage - Rated: 160V
  • Package / Case: TO-272BC
  • Supplier Device Package: TO-272-2
pacchetto: TO-272BC
Azione5.248
0Hz ~ 2.2GHz
15dB
48V
7A
-
300mA
50W
160V
TO-272BC
TO-272-2
LET9045F
STMicroelectronics

FET RF LDMOS 80V 9A M-250

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 17.7dB
  • Voltage - Test: 28V
  • Current Rating: 9A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 59W
  • Voltage - Rated: 80V
  • Package / Case: M250
  • Supplier Device Package: M250
pacchetto: M250
Azione5.728
960MHz
17.7dB
28V
9A
-
300mA
59W
80V
M250
M250
MRF1513NT1
NXP

FET RF 40V 520MHZ PLD-1.5

  • Transistor Type: LDMOS
  • Frequency: 520MHz
  • Gain: 15dB
  • Voltage - Test: 12.5V
  • Current Rating: 2A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 3W
  • Voltage - Rated: 40V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
pacchetto: PLD-1.5
Azione19.764
520MHz
15dB
12.5V
2A
-
50mA
3W
40V
PLD-1.5
PLD-1.5
ART150PEGXY
Ampleon USA Inc.

RF MOSFET LDMOS 65V TO270

  • Transistor Type: LDMOS
  • Frequency: 1MHz ~ 650MHz
  • Gain: 31.2dB
  • Voltage - Test: 65 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 150W
  • Voltage - Rated: 200 V
  • Package / Case: TO-270BA
  • Supplier Device Package: TO-270-2G-1
pacchetto: -
Azione270
1MHz ~ 650MHz
31.2dB
65 V
1.4µA
-
500 mA
150W
200 V
TO-270BA
TO-270-2G-1
ST16010
STMicroelectronics

RF MOSFET LDMOS MM

  • Transistor Type: LDMOS
  • Frequency: 1.6GHz
  • Gain: 23dB
  • Voltage - Test: -
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 10W
  • Voltage - Rated: 90 V
  • Package / Case: MM
  • Supplier Device Package: MM
pacchetto: -
Request a Quote
1.6GHz
23dB
-
1µA
-
-
10W
90 V
MM
MM
PTVA043502EC-V1-R0
MACOM Technology Solutions

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
WSGPA01-V1-R3K
MACOM Technology Solutions

RF MOSFET GAN 48V 12DFN

  • Transistor Type: GaN
  • Frequency: 5GHz
  • Gain: 16.3dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 25 mA
  • Power - Output: 10W
  • Voltage - Rated: 125 V
  • Package / Case: 12-VFDFN Exposed Pad
  • Supplier Device Package: 12-DFN (3x4)
pacchetto: -
Request a Quote
5GHz
16.3dB
48 V
-
-
25 mA
10W
125 V
12-VFDFN Exposed Pad
12-DFN (3x4)
PTFB093608FV-V3-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-34275G-6

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 20dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.8 A
  • Power - Output: 315W
  • Voltage - Rated: 65 V
  • Package / Case: H-34275G-6/2
  • Supplier Device Package: H-34275G-6/2
pacchetto: -
Request a Quote
960MHz
20dB
28 V
-
-
2.8 A
315W
65 V
H-34275G-6/2
H-34275G-6/2
MRF9060MR1
Freescale Semiconductor

RF MOSFET 26V TO270-2

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 1GHz
  • Gain: 18dB
  • Voltage - Test: 26 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 450 mA
  • Power - Output: 60W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
pacchetto: -
Request a Quote
1GHz
18dB
26 V
10µA
-
450 mA
60W
65 V
TO-270AA
TO-270-2
PTVA047002EV-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
A2V09H400-04SR3
NXP

RF MOSFET LDMOS 48V NI780

  • Transistor Type: LDMOS
  • Frequency: 720MHz ~ 960MHz
  • Gain: 18.7dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 750 mA
  • Power - Output: 102W
  • Voltage - Rated: 105 V
  • Package / Case: NI-780S-4L
  • Supplier Device Package: NI-780S-4L
pacchetto: -
Request a Quote
720MHz ~ 960MHz
18.7dB
48 V
10µA
-
750 mA
102W
105 V
NI-780S-4L
NI-780S-4L