Pagina 82 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Singoli

Record 20.307
Pagina  82/726
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BCP5316E6433HTMA1
Infineon Technologies

TRANS PNP 80V 1A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
pacchetto: TO-261-4, TO-261AA
Azione6.400
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
2W
125MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
MPSA65_D26Z
Fairchild/ON Semiconductor

TRANS PNP DARL 30V 1.2A TO-92

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione7.968
1.2A
30V
1.5V @ 100µA, 100mA
100nA (ICBO)
20000 @ 100mA, 5V
625mW
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC213_J35Z
Fairchild/ON Semiconductor

TRANS PNP 30V 0.5A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 2mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.872
500mA
30V
600mV @ 5mA, 100mA
15nA (ICBO)
80 @ 2mA, 5V
625mW
200MHz
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BUT11APX,127
NXP

TRANS NPN 450V 5A SOT186A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 3A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
  • Power - Max: 32W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220F
pacchetto: TO-220-3 Full Pack, Isolated Tab
Azione5.776
5A
450V
1.5V @ 600mA, 3A
1mA
14 @ 500mA, 5V
32W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack, Isolated Tab
TO-220F
ZTX776STOB
Diodes Incorporated

TRANS PNP 200V 1A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 30MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
pacchetto: E-Line-3, Formed Leads
Azione7.744
1A
200V
500mV @ 200mA, 1A
100nA (ICBO)
50 @ 500mA, 5V
1W
30MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
BC182LA
Fairchild/ON Semiconductor

TRANS NPN 50V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione4.416
100mA
50V
-
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
JAN2N5154L
Microsemi Corporation

TRANS NPN 80V 2A TO5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
pacchetto: TO-205AA, TO-5-3 Metal Can
Azione2.864
2A
80V
1.5V @ 500mA, 5A
50µA
70 @ 2.5A, 5V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
CPH3215-TL-E
ON Semiconductor

TRANS NPN 30V 1.5A CPH3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 225mV @ 15mA, 750mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 500MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: 3-CPH
pacchetto: SC-96
Azione6.208
1.5A
30V
225mV @ 15mA, 750mA
100nA (ICBO)
200 @ 100mA, 2V
900mW
500MHz
150°C (TJ)
Surface Mount
SC-96
3-CPH
BC338-40 A1G
TSC America Inc.

TRANSISTOR, NPN, 25V, 0.8A, 250A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione7.200
800mA
25V
700mV @ 50mA, 500mA
100nA (ICBO)
-
625mW
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92
hot DSC7102R0L
Panasonic Electronic Components

TRANS NPN 80V 1A MINIP3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MiniP3-F2-B
pacchetto: TO-243AA
Azione24.000
1A
80V
300mV @ 50mA, 500mA
100nA (ICBO)
120 @ 100mA, 2V
1W
180MHz
150°C (TJ)
Surface Mount
TO-243AA
MiniP3-F2-B
DSC7Q01S0L
Panasonic Electronic Components

TRANS NPN DARL 80V 1A MINIP3

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 16000 @ 1A, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MiniP3-F2-B
pacchetto: TO-243AA
Azione5.968
1A
80V
1.8V @ 1mA, 1A
100nA (ICBO)
16000 @ 1A, 10V
1W
-
150°C (TJ)
Surface Mount
TO-243AA
MiniP3-F2-B
2SB09700RL
Panasonic Electronic Components

TRANS PNP 10V 0.5A MINI-3P

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 8mA, 400mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 2V
  • Power - Max: 200mW
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.760
500mA
10V
300mV @ 8mA, 400mA
100nA (ICBO)
130 @ 500mA, 2V
200mW
130MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
PBSS4220V,115
Nexperia USA Inc.

TRANS NPN 20V 2A SOT666

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 210MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
pacchetto: SOT-563, SOT-666
Azione5.968
2A
20V
350mV @ 200mA, 2A
100nA
200 @ 1A, 2V
900mW
210MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-666
hot BCX51TA
Diodes Incorporated

TRANS PNP 45V 1A SOT89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacchetto: TO-243AA
Azione10.296
1A
45V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1W
150MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89
DSA7504Q0L
Panasonic Electronic Components

TRANS PNP 20V 4A MINIP3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2A, 2V
  • Power - Max: 1W
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MiniP3-F2-B
pacchetto: TO-243AA
Azione19.554
4A
20V
1V @ 100mA, 3A
100nA (ICBO)
120 @ 2A, 2V
1W
180MHz
150°C (TJ)
Surface Mount
TO-243AA
MiniP3-F2-B
hot TIP42CG
ON Semiconductor

TRANS PNP 100V 6A TO220AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
  • Power - Max: 2W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione136.512
6A
100V
1.5V @ 600mA, 6A
700µA
15 @ 3A, 4V
2W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot BC32725BU
Fairchild/ON Semiconductor

TRANS PNP 45V 0.8A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione6.752
800mA
45V
700mV @ 50mA, 500mA
100nA
160 @ 100mA, 1V
625mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BC859C_R1_00001
Panjit International Inc.

TRANS PNP 30V 0.1A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 330 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: -
Request a Quote
100 mA
30 V
650mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
330 mW
200MHz
-50°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BC847C-DG-B4R
Nexperia USA Inc.

TRANS NPN 45V 0.1A TO236AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 250 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
pacchetto: -
Request a Quote
100 mA
45 V
400mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
250 mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
AA1L4M-T-A
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BC858B
Taiwan Semiconductor Corporation

SOT-23, -30V, -0.1A, PNP BIPOLAR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: -
Request a Quote
100 mA
30 V
650mV @ 5mA, 100mA
100nA (ICBO)
220 @ 2mA, 5V
200 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MJ4502
NTE Electronics, Inc

TRANS PNP 100V 30A TO204

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 30 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 750mA, 7.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 7.5A, 2V
  • Power - Max: 200 W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
pacchetto: -
Request a Quote
30 A
100 V
800mV @ 750mA, 7.5A
-
25 @ 7.5A, 2V
200 W
2MHz
-
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
NTE16006
NTE Electronics, Inc

TRANS NPN 20V 0.7A 3SIP

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 700 mA
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 150mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: 55MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: 3-SIP
pacchetto: -
Request a Quote
700 mA
20 V
400mV @ 50mA, 500mA
10µA
1000 @ 150mA, 10V
1 W
55MHz
150°C (TJ)
Through Hole
3-SIP
3-SIP
JANSR2N3499L
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
pacchetto: -
Request a Quote
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
2N5226
onsemi

TRANS PNP 25V 0.5A TO92-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 625 mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: -
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500 mA
25 V
800mV @ 10mA, 100mA
-
30 @ 50mA, 10V
625 mW
50MHz
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2N5291
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 116 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
  • Supplier Device Package: TO-61
pacchetto: -
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10 A
100 V
1.5V @ 1mA, 5mA
-
-
116 W
-
-65°C ~ 200°C (TJ)
Stud Mount
TO-211MA, TO-210AC, TO-61-4, Stud
TO-61
2SC2958-AZ
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 140 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 200nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SSIP
  • Supplier Device Package: -
pacchetto: -
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500 mA
140 V
700mV @ 200mA, 1A
200nA (ICBO)
100 @ 100mA, 2V
1 W
60MHz
150°C (TJ)
Through Hole
3-SSIP
-
NTE332
NTE Electronics, Inc

TRANS PNP 100V 15A TO220

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 4V
  • Power - Max: 90 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacchetto: -
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15 A
100 V
3V @ 2.5A, 10A
1mA
40 @ 500mA, 4V
90 W
3MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220