Pagina 673 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC4881(CANO,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 5A 50V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	pacchetto: TO-220-3 Full Pack	Azione5.248	5A	50V	400mV @ 125mA, 2.5A	1µA (ICBO)	100 @ 1A, 1V	2W	100MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC2229-Y(SHP1,F,M	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacchetto: TO-226-3, TO-92-3 Long Body	Azione7.152	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
TIP101	Central Semiconductor Corp	TRANS NPN 80V 8A TO220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V Power - Max: 80W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	pacchetto: TO-220-3	Azione5.456	8A	80V	2.5V @ 80mA, 8A	50µA	1000 @ 3A, 4V	80W	4MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
BC32825_J35Z	Fairchild/ON Semiconductor	TRANS PNP 25V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione3.264	800mA	25V	700mV @ 50mA, 500mA	100nA	160 @ 100mA, 1V	625mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC212L_J35Z	Fairchild/ON Semiconductor	TRANS PNP 50V 0.3A TO-9 Transistor Type: PNP Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione3.248	300mA	50V	600mV @ 5mA, 100mA	15nA (ICBO)	60 @ 2mA, 5V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
P2N2222ARL1G	ON Semiconductor	TRANS NPN 40V 0.6A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione3.584	600mA	40V	1V @ 50mA, 500mA	10nA	100 @ 150mA, 10V	625mW	300MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPSA43G	ON Semiconductor	TRANS NPN 200V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V Power - Max: 625mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione5.216	500mA	200V	500mV @ 2mA, 20mA	100nA (ICBO)	25 @ 1mA, 10V	625mW	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
MPS3646G	ON Semiconductor	TRANS NPN 15V 0.3A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV Power - Max: 625mW Frequency - Transition: 350MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione4.736	300mA	15V	500mV @ 30mA, 300mA	500nA	30 @ 30mA, 400mV	625mW	350MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSD261YTA	Fairchild/ON Semiconductor	TRANS NPN 20V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 500mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione5.888	500mA	20V	400mV @ 50mA, 500mA	100nA (ICBO)	120 @ 100mA, 1V	500mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSP6521NBU	Fairchild/ON Semiconductor	TRANS NPN 25V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V Power - Max: 625mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione3.296	100mA	25V	500mV @ 5mA, 50mA	50nA (ICBO)	300 @ 2mA, 10V	625mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2SA1419T-TD-E	ON Semiconductor	TRANS PNP 160V 1.5A SOT89-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	pacchetto: TO-243AA	Azione11.640	1.5A	160V	500mV @ 50mA, 500mA	1µA (ICBO)	100 @ 100mA, 5V	500mW	120MHz	150°C (TJ)	Surface Mount	TO-243AA	PCP
BC56-16PA-7	Diodes Incorporated	TRANS NPN 80V 1A UDFN Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 520mW Frequency - Transition: 125MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN, Exposed Pad Supplier Device Package: U-DFN-2020-3	pacchetto: 3-UDFN, Exposed Pad	Azione6.992	1A	80V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	520mW	125MHz	-65°C ~ 150°C (TJ)	Surface Mount	3-UDFN, Exposed Pad	U-DFN-2020-3
KSD526Y	Fairchild/ON Semiconductor	TRANS NPN 80V 4A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A Current - Collector Cutoff (Max): 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V Power - Max: 30W Frequency - Transition: 8MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	pacchetto: TO-220-3	Azione18.360	4A	80V	1.5V @ 300mA, 3A	30µA (ICBO)	120 @ 500mA, 5V	30W	8MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
DPLS160-7	Diodes Incorporated	TRANS PNP 60V 1A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V Power - Max: 300mW Frequency - Transition: 220MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione648.000	1A	60V	330mV @ 100mA, 1A	100nA	150 @ 500mA, 5V	300mW	220MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
PMBT5551,235	Nexperia USA Inc.	TRANS NPN 160V 0.3A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 250mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione2.144	300mA	160V	200mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	250mW	300MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
PHD13003C,126	WeEn Semiconductors	TRANS NPN 400V 1.5A SOT54 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Power - Max: 2.1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione6.272	1.5A	400V	1.5V @ 500mA, 1.5A	100µA	5 @ 1A, 2V	2.1W	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SD2560	Sanken	TRANS NPN DARL 150V 15A TO-3P Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 10A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 10A, 4V Power - Max: 130W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	pacchetto: TO-3P-3, SC-65-3	Azione12.288	15A	150V	2.5V @ 10mA, 10A	100µA (ICBO)	5000 @ 10A, 4V	130W	70MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
JANSL2N2369AUA	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 15 V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	pacchetto: -	Request a Quote	-	15 V	450mV @ 10mA, 100mA	400nA	40 @ 10mA, 1V	500 mW	-	-65°C ~ 200°C	Surface Mount	4-SMD, No Lead	UA
BC847BQ-7-F	Diodes Incorporated	GENERAL PURPOSE TRANSISTOR SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 310 mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	pacchetto: -	Request a Quote	100 mA	45 V	600mV @ 5mA, 100mA	15nA	200 @ 2mA, 5V	310 mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
JANHCB2N5004	Microchip Technology	TRANS NPN 80V 10A DIE Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 2 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: Die Supplier Device Package: Die	pacchetto: -	Request a Quote	10 A	80 V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	2 W	-	-65°C ~ 200°C (TJ)	Stud Mount	Die	Die
MJD127RLG	onsemi	TRANS PNP DARL 100V 8A DPAK Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Power - Max: 1.75 W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	pacchetto: -	Request a Quote	8 A	100 V	4V @ 80mA, 8A	10µA	1000 @ 4A, 4V	1.75 W	4MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
JANSR2N3439UA-TR	Microchip Technology	TRANS NPN 350V 1A UA Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	pacchetto: -	Request a Quote	1 A	350 V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
JANTXV2N3762	Microchip Technology	TRANS PNP 40V 1.5A TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 1.5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	pacchetto: -	Request a Quote	1.5 A	40 V	900mV @ 100mA, 1A	10µA (ICBO)	30 @ 1A, 1.5V	1 W	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
BCW89-QR	Nexperia USA Inc.	BCW89-Q/SOT23/TO-236AB Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Power - Max: 250 mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	pacchetto: -	Azione9.000	100 mA	60 V	300mV @ 500µA, 10mA	100nA (ICBO)	120 @ 2mA, 5V	250 mW	150MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
JANTXV2N6341	Microchip Technology	TRANS NPN 150V 25A TO3 Transistor Type: NPN Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V Power - Max: 200 W Frequency - Transition: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	pacchetto: -	Request a Quote	25 A	150 V	1.8V @ 2.5A, 25A	50µA	30 @ 10A, 2V	200 W	-	-65°C ~ 175°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
BD437-BP	Micro Commercial Co	TRANS NPN 45V 4A TO126 Transistor Type: NPN Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 1V Power - Max: 1.25 W Frequency - Transition: 3MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	pacchetto: -	Request a Quote	4 A	45 V	600mV @ 200mA, 2A	10µA	40 @ 2A, 1V	1.25 W	3MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
MPSA92RLRA	onsemi	TRANS PNP SS GP HV 300V TO92 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC3650-TD-E-ON	onsemi	NPN EPITAXIAL PLANAR SILICON Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V Power - Max: 150 mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89/PCP-1	pacchetto: -	Request a Quote	500 mA	25 V	500mV @ 5mA, 50mA	-	300 @ 10mA, 5V	150 mW	250MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89/PCP-1

2SC4881(CANO,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 5A 50V TO220-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

pacchetto: TO-220-3 Full Pack

Azione5.248

5A

50V

400mV @ 125mA, 2.5A

1µA (ICBO)

100 @ 1A, 1V

2W

100MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220NIS

2SC2229-Y(SHP1,F,M

Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

Azione7.152

50mA

150V

500mV @ 1mA, 10mA

100nA (ICBO)

70 @ 10mA, 5V

800mW

120MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

TIP101

Central Semiconductor Corp

TRANS NPN 80V 8A TO220

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Power - Max: 80W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

pacchetto: TO-220-3

Azione5.456

8A

80V

2.5V @ 80mA, 8A

50µA

1000 @ 3A, 4V

80W

4MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

BC32825_J35Z

Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione3.264

800mA

25V

700mV @ 50mA, 500mA

100nA

160 @ 100mA, 1V

625mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC212L_J35Z

Fairchild/ON Semiconductor

TRANS PNP 50V 0.3A TO-9

Transistor Type: PNP
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione3.248

300mA

50V

600mV @ 5mA, 100mA

15nA (ICBO)

60 @ 2mA, 5V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

P2N2222ARL1G

ON Semiconductor

TRANS NPN 40V 0.6A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione3.584

600mA

40V

1V @ 50mA, 500mA

10nA

100 @ 150mA, 10V

625mW

300MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPSA43G

ON Semiconductor

TRANS NPN 200V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione5.216

500mA

200V

500mV @ 2mA, 20mA

100nA (ICBO)

25 @ 1mA, 10V

625mW

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

MPS3646G

ON Semiconductor

TRANS NPN 15V 0.3A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV
Power - Max: 625mW
Frequency - Transition: 350MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione4.736

300mA

15V

500mV @ 30mA, 300mA

500nA

30 @ 30mA, 400mV

625mW

350MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSD261YTA

Fairchild/ON Semiconductor

TRANS NPN 20V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione5.888

500mA

20V

400mV @ 50mA, 500mA

100nA (ICBO)

120 @ 100mA, 1V

500mW

-

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSP6521NBU

Fairchild/ON Semiconductor

TRANS NPN 25V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione3.296

100mA

25V

500mV @ 5mA, 50mA

50nA (ICBO)

300 @ 2mA, 10V

625mW

-

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2SA1419T-TD-E

ON Semiconductor

TRANS PNP 160V 1.5A SOT89-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 500mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

pacchetto: TO-243AA

Azione11.640

1.5A

160V

500mV @ 50mA, 500mA

1µA (ICBO)

100 @ 100mA, 5V

500mW

120MHz

150°C (TJ)

Surface Mount

TO-243AA

PCP

BC56-16PA-7

Diodes Incorporated

TRANS NPN 80V 1A UDFN

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 520mW
Frequency - Transition: 125MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN, Exposed Pad
Supplier Device Package: U-DFN-2020-3

pacchetto: 3-UDFN, Exposed Pad

Azione6.992

1A

80V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

520mW

125MHz

-65°C ~ 150°C (TJ)

Surface Mount

3-UDFN, Exposed Pad

U-DFN-2020-3

KSD526Y

Fairchild/ON Semiconductor

TRANS NPN 80V 4A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Power - Max: 30W
Frequency - Transition: 8MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

pacchetto: TO-220-3

Azione18.360

4A

80V

1.5V @ 300mA, 3A

30µA (ICBO)

120 @ 500mA, 5V

30W

8MHz

150°C (TJ)

Through Hole

TO-220-3

DPLS160-7

Diodes Incorporated

TRANS PNP 60V 1A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Power - Max: 300mW
Frequency - Transition: 220MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione648.000

1A

60V

330mV @ 100mA, 1A

100nA

150 @ 500mA, 5V

300mW

220MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

PMBT5551,235

Nexperia USA Inc.

TRANS NPN 160V 0.3A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione2.144

300mA

160V

200mV @ 5mA, 50mA

50nA (ICBO)

80 @ 10mA, 5V

250mW

300MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

PHD13003C,126

WeEn Semiconductors

TRANS NPN 400V 1.5A SOT54

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Power - Max: 2.1W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione6.272

1.5A

400V

1.5V @ 500mA, 1.5A

100µA

5 @ 1A, 2V

2.1W

-

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SD2560

Sanken

TRANS NPN DARL 150V 15A TO-3P

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 10A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 10A, 4V
Power - Max: 130W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

pacchetto: TO-3P-3, SC-65-3

Azione12.288

15A

150V

2.5V @ 10mA, 10A

100µA (ICBO)

5000 @ 10A, 4V

130W

70MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

JANSL2N2369AUA

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 15 V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

pacchetto: -

Request a Quote

-

15 V

450mV @ 10mA, 100mA

400nA

40 @ 10mA, 1V

500 mW

-

-65°C ~ 200°C

Surface Mount

4-SMD, No Lead

UA

BC847BQ-7-F

Diodes Incorporated

GENERAL PURPOSE TRANSISTOR SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 310 mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

pacchetto: -

Request a Quote

100 mA

45 V

600mV @ 5mA, 100mA

15nA

200 @ 2mA, 5V

310 mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

JANHCB2N5004

Microchip Technology

TRANS NPN 80V 10A DIE

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 2 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: Die
Supplier Device Package: Die

pacchetto: -

Request a Quote

10 A

80 V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

2 W

-

-65°C ~ 200°C (TJ)

Stud Mount

Die

MJD127RLG

onsemi

TRANS PNP DARL 100V 8A DPAK

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Power - Max: 1.75 W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

pacchetto: -

Request a Quote

8 A

100 V

4V @ 80mA, 8A

10µA

1000 @ 4A, 4V

1.75 W

4MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

JANSR2N3439UA-TR

Microchip Technology

TRANS NPN 350V 1A UA

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

pacchetto: -

Request a Quote

1 A

350 V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

JANTXV2N3762

Microchip Technology

TRANS PNP 40V 1.5A TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 1.5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

pacchetto: -

Request a Quote

1.5 A

40 V

900mV @ 100mA, 1A

10µA (ICBO)

30 @ 1A, 1.5V

1 W

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

BCW89-QR

Nexperia USA Inc.

BCW89-Q/SOT23/TO-236AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Power - Max: 250 mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

pacchetto: -

Azione9.000

100 mA

60 V

300mV @ 500µA, 10mA

100nA (ICBO)

120 @ 2mA, 5V

250 mW

150MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

JANTXV2N6341

Microchip Technology

TRANS NPN 150V 25A TO3

Transistor Type: NPN
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V
Power - Max: 200 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

pacchetto: -

Request a Quote

25 A

150 V

1.8V @ 2.5A, 25A

50µA

30 @ 10A, 2V

200 W

-

-65°C ~ 175°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

BD437-BP

Micro Commercial Co

TRANS NPN 45V 4A TO126

Transistor Type: NPN
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 1V
Power - Max: 1.25 W
Frequency - Transition: 3MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

pacchetto: -

Request a Quote

4 A

45 V

600mV @ 200mA, 2A

10µA

40 @ 2A, 1V

1.25 W

3MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

MPSA92RLRA

onsemi

TRANS PNP SS GP HV 300V TO92

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

2SC3650-TD-E-ON

onsemi

NPN EPITAXIAL PLANAR SILICON

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Power - Max: 150 mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89/PCP-1

pacchetto: -

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500 mA

25 V

500mV @ 5mA, 50mA

-

300 @ 10mA, 5V

150 mW

250MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89/PCP-1