Pagina 635 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC2655-Y(HIT,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacchetto: TO-226-3, TO-92-3 Long Body	Azione3.360	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA965-Y,T6F(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	pacchetto: TO-226-3, TO-92-3 Long Body	Azione6.896	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
JAN2N3584	Microsemi Corporation	TRANS NPN 250V 2A TO-66 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V Power - Max: 2.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	pacchetto: TO-213AA, TO-66-2	Azione2.448	2A	250V	750mV @ 125mA, 1A	5mA	25 @ 1A, 10V	2.5W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
STL106D	STMicroelectronics	TRANS NPN 230V 1.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 2A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Power - Max: 1.5W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione2.640	1.5A	230V	1.2V @ 400mA, 2A	250µA	10 @ 1A, 5V	1.5W	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
MPSA42_D75Z	Fairchild/ON Semiconductor	TRANS NPN 300V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 625mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione6.416	500mA	300V	500mV @ 2mA, 20mA	100nA (ICBO)	40 @ 30mA, 10V	625mW	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
ZX3CD3S1M832TA	Diodes Incorporated	TRANS PNP 40V 3A 8-MLP Transistor Type: PNP + Diode (Isolated) Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V Power - Max: 3W Frequency - Transition: 190MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-MLP (3x2)	pacchetto: 8-VDFN Exposed Pad	Azione148.800	3A	40V	370mV @ 250mA, 2.5A	25nA	60 @ 1.5A, 2V	3W	190MHz	150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-MLP (3x2)
NSS20600CF8T1G	ON Semiconductor	TRANS PNP 20V 6A 8-CHIPFET Transistor Type: PNP Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 1A, 2V Power - Max: 830mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	pacchetto: 8-SMD, Flat Lead	Azione4.320	6A	20V	200mV @ 400mA, 4A	100nA (ICBO)	220 @ 1A, 2V	830mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
MMBT2222LT3	ON Semiconductor	TRANS NPN 30V 0.6A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 300mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione7.792	600mA	30V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	300mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BC517G	ON Semiconductor	TRANS NPN DARL 30V 1A TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione4.768	1A	30V	1V @ 100µA, 100mA	500nA	30000 @ 20mA, 2V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJPF6806DTU	Fairchild/ON Semiconductor	TRANS NPN 750V 6A TO-220F Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 750V Vce Saturation (Max) @ Ib, Ic: 5V @ 1A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 4A, 5V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	pacchetto: TO-220-3 Full Pack	Azione4.464	6A	750V	5V @ 1A, 4A	1mA	4 @ 4A, 5V	40W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
FJP13009	Fairchild/ON Semiconductor	TRANS NPN 400V 12A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V Power - Max: 100W Frequency - Transition: 4MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	pacchetto: TO-220-3	Azione164.628	12A	400V	3V @ 3A, 12A	-	8 @ 5A, 5V	100W	4MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
BD235STU	Fairchild/ON Semiconductor	TRANS NPN 60V 2A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V Power - Max: 25W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	pacchetto: TO-225AA, TO-126-3	Azione5.040	2A	60V	600mV @ 100mA, 1A	100µA (ICBO)	25 @ 1A, 2V	25W	3MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
2SD2264TV2R	Rohm Semiconductor	TRANS NPN 20V 3A ATV Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V Power - Max: 1W Frequency - Transition: 290MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: ATV	pacchetto: 3-SIP	Azione6.736	3A	20V	500mV @ 100mA, 2A	100nA (ICBO)	180 @ 100mA, 2V	1W	290MHz	150°C (TJ)	Through Hole	3-SIP	ATV
2N4403T93	Rohm Semiconductor	TRANS PNP 40V 0.6A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione6.336	600mA	40V	750mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 1V	625mW	200MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92
MJE5731A	ON Semiconductor	TRANS PNP 375V 1A TO220AB Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 375V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Power - Max: 40W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	pacchetto: TO-220-3	Azione28.836	1A	375V	1V @ 200mA, 1A	1mA	30 @ 300mA, 10V	40W	10MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
BC548B A1G	TSC America Inc.	TRANSISTOR, NPN, 30V, 0.1A, 200A Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione7.760	100mA	30V	-	15nA (ICBO)	200 @ 2mA, 5V	500mW	-	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92
2SC5939G0L	Panasonic Electronic Components	TRANS NPN 10V 0.05A SSSMINI-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5mA, 4V Power - Max: 100mW Frequency - Transition: 2.7GHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F2	pacchetto: SOT-723	Azione5.650.740	50mA	10V	500mV @ 4mA, 20mA	1µA (ICBO)	75 @ 5mA, 4V	100mW	2.7GHz	125°C (TJ)	Surface Mount	SOT-723	SSSMini3-F2
2SB1123S-TD-E	ON Semiconductor	TRANS PNP 50V 2A SOT89-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	pacchetto: TO-243AA	Azione142.800	2A	50V	700mV @ 50mA, 1A	100nA (ICBO)	100 @ 100mA, 2V	500mW	150MHz	150°C (TJ)	Surface Mount	TO-243AA	PCP
2SC5566-TD-E	ON Semiconductor	TRANS NPN 50V 4A SOT89-3 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 225mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 1.3W Frequency - Transition: 400MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	pacchetto: TO-243AA	Azione86.268	4A	50V	225mV @ 100mA, 2A	1µA (ICBO)	200 @ 500mA, 2V	1.3W	400MHz	150°C (TJ)	Surface Mount	TO-243AA	PCP
JANS2N5153U3-TR	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 1.16 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3	pacchetto: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	1.16 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U3
2SJ358C-0-T1-AZ	Renesas Electronics Corporation	TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JAN2N6033	Microchip Technology	TRANS NPN 120V 40A TO3 Transistor Type: NPN Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 25mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 40A, 2V Power - Max: 140 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TA) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	pacchetto: -	Request a Quote	40 A	120 V	-	25mA (ICBO)	10 @ 40A, 2V	140 W	-	-65°C ~ 200°C (TA)	Through Hole	TO-204AA, TO-3	TO-3
2SD1246S-AA	Sanyo	NPN SILICON TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Power - Max: 750 mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: 3-NP	pacchetto: -	Request a Quote	2 A	25 V	400mV @ 75mA, 1.5A	100nA (ICBO)	140 @ 100mA, 2V	750 mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	3-NP
2N5405	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 7.5 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	pacchetto: -	Request a Quote	5 A	100 V	-	-	-	7.5 W	-	-	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N6373	Microchip Technology	TRANS PNP 60V 6A TO66 Transistor Type: PNP Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 40 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	pacchetto: -	Request a Quote	6 A	60 V	-	-	-	40 W	-	-	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
2N697A-PBFREE	Central Semiconductor Corp	TRANS NPN 35V TO39 Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 35 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: - Frequency - Transition: 50MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	pacchetto: -	Azione1.881	-	35 V	-	1µA (ICBO)	40 @ 150mA, 10V	-	50MHz	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2SC4672-P-TP	Micro Commercial Co	TRANS NPN 50V 2A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V Power - Max: 500 mW Frequency - Transition: 210MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	pacchetto: -	Request a Quote	2 A	50 V	350mV @ 50mA, 1A	100nA (ICBO)	82 @ 500mA, 2V	500 mW	210MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
MMSS8050W-L-TP	Micro Commercial Co	Interface Transistor Type: NPN Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	pacchetto: -	Request a Quote	1.5 A	25 V	500mV @ 80mA, 800mA	100nA	120 @ 100mA, 1V	200 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323

2SC2655-Y(HIT,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

Azione3.360

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SA965-Y,T6F(J

Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

pacchetto: TO-226-3, TO-92-3 Long Body

Azione6.896

800mA

120V

1V @ 50mA, 500mA

100nA (ICBO)

80 @ 100mA, 5V

900mW

120MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

LSTM

JAN2N3584

Microsemi Corporation

TRANS NPN 250V 2A TO-66

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Power - Max: 2.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

pacchetto: TO-213AA, TO-66-2

Azione2.448

2A

250V

750mV @ 125mA, 1A

5mA

25 @ 1A, 10V

2.5W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

STL106D

STMicroelectronics

TRANS NPN 230V 1.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 2A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione2.640

1.5A

230V

1.2V @ 400mA, 2A

250µA

10 @ 1A, 5V

1.5W

-

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

MPSA42_D75Z

Fairchild/ON Semiconductor

TRANS NPN 300V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione6.416

500mA

300V

500mV @ 2mA, 20mA

100nA (ICBO)

40 @ 30mA, 10V

625mW

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

ZX3CD3S1M832TA

Diodes Incorporated

TRANS PNP 40V 3A 8-MLP

Transistor Type: PNP + Diode (Isolated)
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Power - Max: 3W
Frequency - Transition: 190MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-MLP (3x2)

pacchetto: 8-VDFN Exposed Pad

Azione148.800

3A

40V

370mV @ 250mA, 2.5A

25nA

60 @ 1.5A, 2V

3W

190MHz

150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-MLP (3x2)

NSS20600CF8T1G

ON Semiconductor

TRANS PNP 20V 6A 8-CHIPFET

Transistor Type: PNP
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 1A, 2V
Power - Max: 830mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

pacchetto: 8-SMD, Flat Lead

Azione4.320

6A

20V

200mV @ 400mA, 4A

100nA (ICBO)

220 @ 1A, 2V

830mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

MMBT2222LT3

ON Semiconductor

TRANS NPN 30V 0.6A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 300mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione7.792

600mA

30V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

300mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BC517G

ON Semiconductor

TRANS NPN DARL 30V 1A TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione4.768

1A

30V

1V @ 100µA, 100mA

500nA

30000 @ 20mA, 2V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

FJPF6806DTU

Fairchild/ON Semiconductor

TRANS NPN 750V 6A TO-220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 750V
Vce Saturation (Max) @ Ib, Ic: 5V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 4A, 5V
Power - Max: 40W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

pacchetto: TO-220-3 Full Pack

Azione4.464

6A

750V

5V @ 1A, 4A

1mA

4 @ 4A, 5V

40W

-

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

FJP13009

Fairchild/ON Semiconductor

TRANS NPN 400V 12A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Power - Max: 100W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

pacchetto: TO-220-3

Azione164.628

12A

400V

3V @ 3A, 12A

-

8 @ 5A, 5V

100W

4MHz

150°C (TJ)

Through Hole

TO-220-3

BD235STU

Fairchild/ON Semiconductor

TRANS NPN 60V 2A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Power - Max: 25W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

pacchetto: TO-225AA, TO-126-3

Azione5.040

2A

60V

600mV @ 100mA, 1A

100µA (ICBO)

25 @ 1A, 2V

25W

3MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

2SD2264TV2R

Rohm Semiconductor

TRANS NPN 20V 3A ATV

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Power - Max: 1W
Frequency - Transition: 290MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: ATV

pacchetto: 3-SIP

Azione6.736

3A

20V

500mV @ 100mA, 2A

100nA (ICBO)

180 @ 100mA, 2V

1W

290MHz

150°C (TJ)

Through Hole

3-SIP

ATV

2N4403T93

Rohm Semiconductor

TRANS PNP 40V 0.6A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione6.336

600mA

40V

750mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 1V

625mW

200MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92

MJE5731A

ON Semiconductor

TRANS PNP 375V 1A TO220AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 375V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Power - Max: 40W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

pacchetto: TO-220-3

Azione28.836

1A

375V

1V @ 200mA, 1A

1mA

30 @ 300mA, 10V

40W

10MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

BC548B A1G

TSC America Inc.

TRANSISTOR, NPN, 30V, 0.1A, 200A

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione7.760

100mA

30V

-

15nA (ICBO)

200 @ 2mA, 5V

500mW

-

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92

2SC5939G0L

Panasonic Electronic Components

TRANS NPN 10V 0.05A SSSMINI-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5mA, 4V
Power - Max: 100mW
Frequency - Transition: 2.7GHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F2

pacchetto: SOT-723

Azione5.650.740

50mA

10V

500mV @ 4mA, 20mA

1µA (ICBO)

75 @ 5mA, 4V

100mW

2.7GHz

125°C (TJ)

Surface Mount

SOT-723

SSSMini3-F2

2SB1123S-TD-E

ON Semiconductor

TRANS PNP 50V 2A SOT89-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

pacchetto: TO-243AA

Azione142.800

2A

50V

700mV @ 50mA, 1A

100nA (ICBO)

100 @ 100mA, 2V

500mW

150MHz

150°C (TJ)

Surface Mount

TO-243AA

PCP

2SC5566-TD-E

ON Semiconductor

TRANS NPN 50V 4A SOT89-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 225mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1.3W
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

pacchetto: TO-243AA

Azione86.268

4A

50V

225mV @ 100mA, 2A

1µA (ICBO)

200 @ 500mA, 2V

1.3W

400MHz

150°C (TJ)

Surface Mount

TO-243AA

PCP

JANS2N5153U3-TR

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1.16 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U3

pacchetto: -

Request a Quote

2 A

80 V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

1.16 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U3

2SJ358C-0-T1-AZ

Renesas Electronics Corporation

TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

JAN2N6033

Microchip Technology

TRANS NPN 120V 40A TO3

Transistor Type: NPN
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 25mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 40A, 2V
Power - Max: 140 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TA)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

pacchetto: -

Request a Quote

40 A

120 V

-

25mA (ICBO)

10 @ 40A, 2V

140 W

-

-65°C ~ 200°C (TA)

Through Hole

TO-204AA, TO-3

TO-3

2SD1246S-AA

Sanyo

NPN SILICON TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Power - Max: 750 mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: 3-NP

pacchetto: -

Request a Quote

2 A

25 V

400mV @ 75mA, 1.5A

100nA (ICBO)

140 @ 100mA, 2V

750 mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3-NP

2N5405

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 7.5 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

pacchetto: -

Request a Quote

5 A

100 V

-

7.5 W

-

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2N6373

Microchip Technology

TRANS PNP 60V 6A TO66

Transistor Type: PNP
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 40 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

pacchetto: -

Request a Quote

6 A

60 V

-

40 W

-

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

2N697A-PBFREE

Central Semiconductor Corp

TRANS NPN 35V TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 35 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: -
Frequency - Transition: 50MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

pacchetto: -

Azione1.881

-

35 V

-

1µA (ICBO)

40 @ 150mA, 10V

-

50MHz

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

2SC4672-P-TP

Micro Commercial Co

TRANS NPN 50V 2A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
Power - Max: 500 mW
Frequency - Transition: 210MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

pacchetto: -

Request a Quote

2 A

50 V

350mV @ 50mA, 1A

100nA (ICBO)

82 @ 500mA, 2V

500 mW

210MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

MMSS8050W-L-TP

Micro Commercial Co

Interface

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 200 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

pacchetto: -

Request a Quote

1.5 A

25 V

500mV @ 80mA, 800mA

100nA

120 @ 100mA, 1V

200 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323