Pagina 59 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Singoli

Record 20.307
Pagina  59/726
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
KSE182PWD
Fairchild/ON Semiconductor

TRANSISTOR NPN 80V DIP

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
  • Power - Max: 1.5W
  • Frequency - Transition: 500MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.512
3A
80V
1.7V @ 600mA, 3A
100nA (ICBO)
50 @ 100mA, 1V
1.5W
500MHz
150°C (TJ)
-
-
-
2SC2235-Y,T6USNF(M
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
pacchetto: TO-226-3, TO-92-3 Long Body
Azione5.072
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
JANS2N5004
Microsemi Corporation

TRANS NPN 80V 5A TO-59

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-210AA, TO-59-4, Stud
  • Supplier Device Package: TO-59
pacchetto: TO-210AA, TO-59-4, Stud
Azione5.648
5A
80V
1.5V @ 500mA, 5A
50µA
70 @ 2.5A, 5V
2W
-
-65°C ~ 200°C (TJ)
Stud Mount
TO-210AA, TO-59-4, Stud
TO-59
KSE170STU
Fairchild/ON Semiconductor

TRANS PNP 40V 3A TO-126

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
  • Power - Max: 1.5W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126-3
pacchetto: TO-225AA, TO-126-3
Azione2.432
3A
40V
1.7V @ 600mA, 3A
100nA (ICBO)
50 @ 100mA, 1V
1.5W
50MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126-3
KSC2258STU
Fairchild/ON Semiconductor

TRANS NPN 250V 0.1A TO-126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 40mA, 20V
  • Power - Max: 4W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126-3
pacchetto: TO-225AA, TO-126-3
Azione7.328
100mA
250V
1.2V @ 5mA, 50mA
-
40 @ 40mA, 20V
4W
100MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126-3
BC556TF
Fairchild/ON Semiconductor

TRANS PNP 65V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione7.968
100mA
65V
650mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
500mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC33716
Fairchild/ON Semiconductor

TRANS NPN 45V 0.8A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione3.312
800mA
45V
700mV @ 50mA, 500mA
100nA
100 @ 100mA, 1V
625mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot BC817-16LT1
ON Semiconductor

TRANS NPN 45V 0.5A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione7.792
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
300mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
ZTX968STZ
Diodes Incorporated

TRANS PNP 12V 4.5A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4.5A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 5A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 1V
  • Power - Max: 1.58W
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
pacchetto: E-Line-3, Formed Leads
Azione2.896
4.5A
12V
300mV @ 200mA, 5A
50nA (ICBO)
300 @ 500mA, 1V
1.58W
80MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
hot 2SB1695KT146
Rohm Semiconductor

TRANS PNP 30V 1.5A SMT3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 370mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
  • Power - Max: 200mW
  • Frequency - Transition: 280MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione193.968
1.5A
30V
370mV @ 50mA, 1A
100nA (ICBO)
270 @ 100mA, 2V
200mW
280MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
DSS5320T-7
Diodes Incorporated

TRANS PNP 20V 2A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 600mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.368
2A
20V
300mV @ 300mA, 3A
100nA
200 @ 1A, 2V
600mW
180MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
PBSS302PZ,135
Nexperia USA Inc.

TRANS PNP 20V 5.5A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5.5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 265mV @ 275mA, 5.5A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
  • Power - Max: 2W
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: TO-261-4, TO-261AA
Azione6.704
5.5A
20V
265mV @ 275mA, 5.5A
100nA (ICBO)
200 @ 2A, 2V
2W
130MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot BC847AW-7-F
Diodes Incorporated

TRANS NPN 45V 0.1A SC70-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: SC-70, SOT-323
Azione108.000
100mA
45V
600mV @ 5mA, 100mA
20nA (ICBO)
110 @ 2mA, 5V
200mW
300MHz
-65°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
2N6299E3
Microchip Technology

TRANS PNP DARL 80V 500UA TO66

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 500 µA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 80mA, 8A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 1A, 3V
  • Power - Max: 64 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
pacchetto: -
Request a Quote
500 µA
80 V
2V @ 80mA, 8A
500µA
500 @ 1A, 3V
64 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-213AA, TO-66-2
TO-66 (TO-213AA)
2C6284-MSCL
Microchip Technology

POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MJD44H11Q-13
Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR TO252

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
  • Power - Max: 1.5 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
pacchetto: -
Request a Quote
8 A
80 V
1V @ 400mA, 8A
1µA
60 @ 2A, 1V
1.5 W
3MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
2SC4910-AY
onsemi

POWER BIPOLAR TRANSISTOR NPN

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANTX2N2221AUB-TR
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
Request a Quote
800 mA
50 V
1V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
BC846BM3-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 265 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SOT-723
pacchetto: -
Request a Quote
100 mA
65 V
600mV @ 5mA, 100mA
1mA
200 @ 2mA, 5V
265 mW
100MHz
-55°C ~ 150°C
Surface Mount
SOT-723
SOT-723
BC847BQC-QZ
Nexperia USA Inc.

TRANS NPN 45V 0.1A DFN1412D-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 360 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1412D-3
pacchetto: -
Azione15.000
100 mA
45 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
360 mW
100MHz
150°C (TJ)
Surface Mount, Wettable Flank
3-XDFN Exposed Pad
DFN1412D-3
BC857W-QX
Nexperia USA Inc.

TRANS PNP 45V 0.1A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: -
Request a Quote
100 mA
45 V
600mV @ 5mA, 100mA
15nA (ICBO)
125 @ 2mA, 5V
200 mW
100MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
JANSP2N3637L
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 175 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
pacchetto: -
Request a Quote
1 A
175 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
2N336ALT2
Microchip Technology

NPN POWER SILICON TRANSISTORS

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N4348
Microchip Technology

POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BCP55-10
Diotec Semiconductor

IC

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 1.3 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: -
Request a Quote
1 A
60 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
1.3 W
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
JAN2N3499UB
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
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500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
JANTXV2N2907AUA-TR
Microchip Technology

TRANS PNP 60V 0.6A UA

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
pacchetto: -
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600 mA
60 V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UA
2SB564-AZ
Renesas Electronics Corporation

PNP SILICON TRANSISTOR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50 mA
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SSIP
  • Supplier Device Package: -
pacchetto: -
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50 mA
25 V
600mV @ 2mA, 20mA
100nA (ICBO)
90 @ 100mA, 1V
1 W
-
-55°C ~ 150°C (TJ)
Through Hole
3-SSIP
-