Pagina 565 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC2235-Y(T6FJT,AF	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacchetto: TO-226-3, TO-92-3 Long Body	Azione3.360	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1837,WNLF(J	Toshiba Semiconductor and Storage	TRANS PNP 1A 230V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	pacchetto: TO-220-3 Full Pack	Azione5.984	1A	230V	1.5V @ 50mA, 500mA	1µA (ICBO)	100 @ 100mA, 5V	2W	70MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
MMBT4401HLT1G	ON Semiconductor	TRANS NPN 40V 0.6A SOT23 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione6.448	-	-	-	-	-	-	-	-	-	-	-
JAN2N3486A	Microsemi Corporation	TRANS PNP 60V 0.6A Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 400mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46	pacchetto: TO-206AB, TO-46-3 Metal Can	Azione5.904	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	400mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46
BUV26	STMicroelectronics	TRANS NPN 90V 10A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 90V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 12A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 85W Frequency - Transition: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	pacchetto: TO-220-3	Azione5.088	10A	90V	1.5V @ 1.2A, 12A	-	-	85W	-	175°C (TJ)	Through Hole	TO-220-3	TO-220AB
BUL138FP	STMicroelectronics	TRANS NPN 400V 5A TO-220FP Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 700mV @ 1A, 5A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Power - Max: 33W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	pacchetto: TO-220-3 Full Pack	Azione3.376	5A	400V	700mV @ 1A, 5A	250µA	8 @ 2A, 5V	33W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP
ZTX751STOB	Diodes Incorporated	TRANS PNP 60V 2A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 1W Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	pacchetto: E-Line-3, Formed Leads	Azione5.200	2A	60V	500mV @ 200mA, 2A	100nA (ICBO)	-	1W	140MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
BU407TU	Fairchild/ON Semiconductor	TRANS NPN 150V 7A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 7A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 60W Frequency - Transition: 10MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	pacchetto: TO-220-3	Azione4.224	7A	150V	1V @ 500mA, 5A	5mA	-	60W	10MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
2N5550TF	Fairchild/ON Semiconductor	TRANS NPN 140V 0.6A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione7.936	600mA	140V	250mV @ 5mA, 50mA	100nA (ICBO)	60 @ 10mA, 5V	625mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PBSS5140V,115	NXP	TRANS PNP 40V 1A SOT666 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 310mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	pacchetto: SOT-563, SOT-666	Azione3.664	1A	40V	310mV @ 100mA, 1A	100nA (ICBO)	300 @ 100mA, 5V	500mW	150MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
BCX53,115	Nexperia USA Inc.	TRANS PNP 80V 1A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 1.3W Frequency - Transition: 145MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	pacchetto: TO-243AA	Azione5.264	1A	80V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	1.3W	145MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
ESM3030DV	STMicroelectronics	TRANS NPN DARL 300V 100A ISOTOP Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 100A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.4A, 85A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 85A, 5V Power - Max: 225W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: ISOTOP?	pacchetto: SOT-227-4, miniBLOC	Azione5.904	100A	300V	1.5V @ 2.4A, 85A	-	300 @ 85A, 5V	225W	-	150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	ISOTOP?
2N4895	Central Semiconductor Corp	TRANS NPN 60V TO39 Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V Power - Max: - Frequency - Transition: 50MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	pacchetto: TO-205AD, TO-39-3 Metal Can	Azione5.104	-	60V	-	1µA	40 @ 2A, 2V	-	50MHz	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
NZT6717	Fairchild/ON Semiconductor	TRANS NPN 80V 1.2A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Power - Max: 1W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-4	pacchetto: TO-261-4, TO-261AA	Azione292.164	1.2A	80V	350mV @ 10mA, 250mA	100nA (ICBO)	50 @ 250mA, 1V	1W	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-4
PBSS5240XF	Nexperia USA Inc.	TRANS PNP 40V 2A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 140mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	pacchetto: TO-243AA	Azione28.194	2A	40V	140mV @ 5mA, 100mA	100nA (ICBO)	300 @ 1mA, 5V	500mW	150MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
BC556ATA	Fairchild/ON Semiconductor	TRANS PNP 65V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione1.008.000	100mA	65V	650mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	500mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC546BTF	Fairchild/ON Semiconductor	TRANS NPN 65V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione59.214	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	500mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
ZUMT718TA	Diodes Incorporated	TRANS PNP 20V 1A SC70-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 500mW Frequency - Transition: 210MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	pacchetto: SC-70, SOT-323	Azione208.764	1A	20V	250mV @ 100mA, 1A	10nA	200 @ 500mA, 2V	500mW	210MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
PBSS4350SA_R1_00001	Panjit International Inc.	TRANS NPN 50V 3A SC59 Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Power - Max: 1.25 W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	pacchetto: -	Request a Quote	3 A	50 V	370mV @ 300mA, 3A	100nA	300 @ 1A, 2V	1.25 W	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
TTA006B-Q-S	Toshiba Semiconductor and Storage	TRANSISTOR PNP BIPO TO126N Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CZT5551-BK-PBFREE	Central Semiconductor Corp	TRANS NPN 160V 0.6A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 2 W Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: -	Request a Quote	600 mA	160 V	200mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	2 W	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
JANTXV2N2907AUBC	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UBC	pacchetto: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UBC
BC847B-C	Diotec Semiconductor	BJT SOT23 45V NPN 0.25W 150C Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 5V Power - Max: 250 mW Frequency - Transition: 300MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: - Supplier Device Package: SOT-23	pacchetto: -	Request a Quote	100 mA	45 V	600mV @ 5mA, 100mA	100nA	290 @ 2mA, 5V	250 mW	300MHz	-	Surface Mount	-	SOT-23
2N4958	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
KTC3199-Y-AP	Micro Commercial Co	TRANS NPN 50V 0.15A TO92S Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 400 mW Frequency - Transition: 80MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	pacchetto: -	Request a Quote	150 mA	50 V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	400 mW	80MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body (Formed Leads)	TO-92S
2SB817C	onsemi	PNP SILICON TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Power - Max: 2.5 W Frequency - Transition: 10MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P-3	pacchetto: -	Request a Quote	12 A	140 V	2V @ 500mA, 5A	100µA (ICBO)	100 @ 1A, 5V	2.5 W	10MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P-3
2SC2001-T-A	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Power - Max: 600 mW Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	pacchetto: -	Request a Quote	700 mA	25 V	600mV @ 70mA, 700mA	100nA (ICBO)	90 @ 100mA, 1V	600 mW	170MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
2C5686	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

2SC2235-Y(T6FJT,AF

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

Azione3.360

800mA

120V

1V @ 50mA, 500mA

100nA (ICBO)

80 @ 100mA, 5V

900mW

120MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SA1837,WNLF(J

Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

pacchetto: TO-220-3 Full Pack

Azione5.984

1A

230V

1.5V @ 50mA, 500mA

1µA (ICBO)

100 @ 100mA, 5V

2W

70MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220NIS

MMBT4401HLT1G

ON Semiconductor

TRANS NPN 40V 0.6A SOT23

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione6.448

-

JAN2N3486A

Microsemi Corporation

TRANS PNP 60V 0.6A

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 400mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46

pacchetto: TO-206AB, TO-46-3 Metal Can

Azione5.904

600mA

60V

1.6V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

400mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AB, TO-46-3 Metal Can

TO-46

BUV26

STMicroelectronics

TRANS NPN 90V 10A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 90V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 12A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 85W
Frequency - Transition: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

pacchetto: TO-220-3

Azione5.088

10A

90V

1.5V @ 1.2A, 12A

-

85W

-

175°C (TJ)

Through Hole

TO-220-3

TO-220AB

BUL138FP

STMicroelectronics

TRANS NPN 400V 5A TO-220FP

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1A, 5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Power - Max: 33W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP

pacchetto: TO-220-3 Full Pack

Azione3.376

5A

400V

700mV @ 1A, 5A

250µA

8 @ 2A, 5V

33W

-

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220FP

ZTX751STOB

Diodes Incorporated

TRANS PNP 60V 2A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 1W
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

pacchetto: E-Line-3, Formed Leads

Azione5.200

2A

60V

500mV @ 200mA, 2A

100nA (ICBO)

-

1W

140MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

BU407TU

Fairchild/ON Semiconductor

TRANS NPN 150V 7A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 60W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

pacchetto: TO-220-3

Azione4.224

7A

150V

1V @ 500mA, 5A

5mA

-

60W

10MHz

150°C (TJ)

Through Hole

TO-220-3

2N5550TF

Fairchild/ON Semiconductor

TRANS NPN 140V 0.6A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione7.936

600mA

140V

250mV @ 5mA, 50mA

100nA (ICBO)

60 @ 10mA, 5V

625mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

PBSS5140V,115

NXP

TRANS PNP 40V 1A SOT666

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 310mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

pacchetto: SOT-563, SOT-666

Azione3.664

1A

40V

310mV @ 100mA, 1A

100nA (ICBO)

300 @ 100mA, 5V

500mW

150MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

BCX53,115

Nexperia USA Inc.

TRANS PNP 80V 1A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1.3W
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

pacchetto: TO-243AA

Azione5.264

1A

80V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

1.3W

145MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

ESM3030DV

STMicroelectronics

TRANS NPN DARL 300V 100A ISOTOP

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.4A, 85A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 85A, 5V
Power - Max: 225W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?

pacchetto: SOT-227-4, miniBLOC

Azione5.904

100A

300V

1.5V @ 2.4A, 85A

-

300 @ 85A, 5V

225W

-

150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

ISOTOP?

2N4895

Central Semiconductor Corp

TRANS NPN 60V TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
Power - Max: -
Frequency - Transition: 50MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

pacchetto: TO-205AD, TO-39-3 Metal Can

Azione5.104

-

60V

-

1µA

40 @ 2A, 2V

-

50MHz

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

NZT6717

Fairchild/ON Semiconductor

TRANS NPN 80V 1.2A SOT-223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4

pacchetto: TO-261-4, TO-261AA

Azione292.164

1.2A

80V

350mV @ 10mA, 250mA

100nA (ICBO)

50 @ 250mA, 1V

1W

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-4

PBSS5240XF

Nexperia USA Inc.

TRANS PNP 40V 2A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

pacchetto: TO-243AA

Azione28.194

2A

40V

140mV @ 5mA, 100mA

100nA (ICBO)

300 @ 1mA, 5V

500mW

150MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

BC556ATA

Fairchild/ON Semiconductor

TRANS PNP 65V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione1.008.000

100mA

65V

650mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

500mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC546BTF

Fairchild/ON Semiconductor

TRANS NPN 65V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione59.214

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

500mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

ZUMT718TA

Diodes Incorporated

TRANS PNP 20V 1A SC70-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 500mW
Frequency - Transition: 210MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

pacchetto: SC-70, SOT-323

Azione208.764

1A

20V

250mV @ 100mA, 1A

10nA

200 @ 500mA, 2V

500mW

210MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

PBSS4350SA_R1_00001

Panjit International Inc.

TRANS NPN 50V 3A SC59

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 1.25 W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

pacchetto: -

Request a Quote

3 A

50 V

370mV @ 300mA, 3A

100nA

300 @ 1A, 2V

1.25 W

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

TTA006B-Q-S

Toshiba Semiconductor and Storage

TRANSISTOR PNP BIPO TO126N

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

CZT5551-BK-PBFREE

Central Semiconductor Corp

TRANS NPN 160V 0.6A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 2 W
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: -

Request a Quote

600 mA

160 V

200mV @ 5mA, 50mA

50nA (ICBO)

80 @ 10mA, 5V

2 W

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

JANTXV2N2907AUBC

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UBC

pacchetto: -

Request a Quote

600 mA

60 V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UBC

BC847B-C

Diotec Semiconductor

BJT SOT23 45V NPN 0.25W 150C

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 5V
Power - Max: 250 mW
Frequency - Transition: 300MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: SOT-23

pacchetto: -

Request a Quote

100 mA

45 V

600mV @ 5mA, 100mA

100nA

290 @ 2mA, 5V

250 mW

300MHz

-

Surface Mount

-

SOT-23

2N4958

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

KTC3199-Y-AP

Micro Commercial Co

TRANS NPN 50V 0.15A TO92S

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 400 mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Supplier Device Package: TO-92S

pacchetto: -

Request a Quote

150 mA

50 V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

400 mW

80MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body (Formed Leads)

TO-92S

2SB817C

onsemi

PNP SILICON TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Power - Max: 2.5 W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P-3

pacchetto: -

Request a Quote

12 A

140 V

2V @ 500mA, 5A

100µA (ICBO)

100 @ 1A, 5V

2.5 W

10MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P-3

2SC2001-T-A

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Power - Max: 600 mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

pacchetto: -

Request a Quote

700 mA

25 V

600mV @ 70mA, 700mA

100nA (ICBO)

90 @ 100mA, 1V

600 mW

170MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

2C5686

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-