Pagina 532 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Singoli

Record 20.307
Pagina  532/726
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot 2SA1425-Y,T2F(J
Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V SC71

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
pacchetto: SC-71
Azione24.000
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
1W
120MHz
150°C (TJ)
Through Hole
SC-71
MSTM
CP647-CEN1103-CT
Central Semiconductor Corp

TRANS PNP DARLINGTON DIE

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.824
-
-
-
-
-
-
-
-
-
-
-
BC327,412
NXP

TRANS PNP 45V 0.5A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione2.640
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
625mW
80MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot TIP31ATU
Fairchild/ON Semiconductor

TRANS NPN 60V 3A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 2W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
pacchetto: TO-220-3
Azione66.744
3A
60V
1.2V @ 375mA, 3A
300µA
10 @ 3A, 4V
2W
3MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FJZ945GTF
Fairchild/ON Semiconductor

TRANS NPN 50V 0.15A SOT623F

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: SOT-623F
pacchetto: SOT-623F
Azione4.224
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 1mA, 6V
100mW
300MHz
150°C (TJ)
Surface Mount
SOT-623F
SOT-623F
ZTX455STOB
Diodes Incorporated

TRANS NPN 140V 1A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
pacchetto: E-Line-3, Formed Leads
Azione4.544
1A
140V
700mV @ 15mA, 150mA
100nA (ICBO)
100 @ 150mA, 10V
1W
100MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
BC546BTAR
Fairchild/ON Semiconductor

TRANS NPN 65V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione2.432
100mA
65V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
500mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2SD2177A0A
Panasonic Electronic Components

TRANS NPN 60V 2A MT-2

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 110MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: MT-2-A1
pacchetto: 3-SIP
Azione7.072
2A
60V
300mV @ 50mA, 1A
100nA (ICBO)
120 @ 200mA, 2V
1W
110MHz
150°C (TJ)
Through Hole
3-SIP
MT-2-A1
TIP42C SL
Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR BIPOLAR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max): 400µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
  • Power - Max: 65W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
pacchetto: TO-220-3
Azione3.504
6A
100V
1.5V @ 600mA, 6A
400µA
30 @ 300mA, 4V
65W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
NSVBCP53-16T3G
ON Semiconductor

TRANS PNP 80V 1.5A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 1.5W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223 (TO-261)
pacchetto: TO-261-4, TO-261AA
Azione5.472
1.5A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
1.5W
50MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223 (TO-261)
hot BUL510
STMicroelectronics

TRANS NPN 450V 10A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 5A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Power - Max: 100W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione18.624
10A
450V
1.5V @ 1.25A, 5A
250µA
15 @ 1A, 5V
100W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot ZXTP4003GTA
Diodes Incorporated

TRANS PNP 100V 1A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: TO-261-4, TO-261AA
Azione179.400
1A
100V
-
50nA (ICBO)
100 @ 150mA, 200mV
2W
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
PMST2907A,115
Nexperia USA Inc.

TRANS PNP 60V 0.6A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 200mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
pacchetto: SC-70, SOT-323
Azione295.380
600mA
60V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
200mW
200MHz
-
Surface Mount
SC-70, SOT-323
SOT-323-3
hot ZXTP25040DFLTA
Diodes Incorporated

TRANS PNP 40V 1.5A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Power - Max: 350mW
  • Frequency - Transition: 270MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione565.560
1.5A
40V
300mV @ 300mA, 3A
50nA (ICBO)
300 @ 10mA, 2V
350mW
270MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DSS20201L-7
Diodes Incorporated

TRANS NPN 20V 2A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 600mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione46.134
2A
20V
100mV @ 200mA, 2A
100nA (ICBO)
200 @ 500mA, 2V
600mW
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MMSTA56Q-7-F
Diodes Incorporated

TRANS PNP 80V 0.5A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: -
Azione14.955
500 mA
80 V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
200 mW
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
JANSD2N2222AUA
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 650 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
pacchetto: -
Request a Quote
800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
650 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UA
JANSP2N2906AUBC-TR
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UBC
pacchetto: -
Request a Quote
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UBC
JANTXV2N3724L
Microchip Technology

TRANS NPN 30V 0.5A TO5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
pacchetto: -
Request a Quote
500 mA
30 V
-
-
-
-
-
200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
JANSD2N2221AUA-TR
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 650 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
pacchetto: -
Request a Quote
800 mA
50 V
1V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
650 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UA
LB1214-E-ON
onsemi

GENERRAL-PURPOSE TRANSISTOR ARRA

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SB1151-S1-AZ
Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR, PNP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
  • Power - Max: 1.3 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
pacchetto: -
Request a Quote
5 A
60 V
300mV @ 200mA, 2A
10µA (ICBO)
100 @ 2A, 1V
1.3 W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
2N6520-AP
Micro Commercial Co

TRANS PNP 350V 0.5A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
  • Power - Max: 625 mW
  • Frequency - Transition: 40MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
pacchetto: -
Request a Quote
500 mA
350 V
1V @ 5mA, 50mA
50nA (ICBO)
30 @ 30mA, 10V
625 mW
40MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92
JANKCA2N5238
Microchip Technology

TRANS NPN 170V 10A TO5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 170 V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
pacchetto: -
Request a Quote
10 A
170 V
2.5V @ 1A, 10A
10µA
50 @ 1A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
2N5011S
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 25mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
pacchetto: -
Request a Quote
200 mA
600 V
1.5V @ 5mA, 25mA
10nA (ICBO)
30 @ 25mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
CP611-2N6107-CM
Central Semiconductor Corp

TRANSISTOR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 7 A
  • Voltage - Collector Emitter Breakdown (Max): 70 V
  • Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
  • Power - Max: 40 W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
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7 A
70 V
3.5V @ 3A, 7A
1mA
30 @ 2A, 4V
40 W
4MHz
-65°C ~ 150°C (TJ)
Surface Mount
Die
Die
KSP92ATA
onsemi

TRANS PNP 300V 0.5A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
  • Power - Max: 625 mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92-3
pacchetto: -
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500 mA
300 V
500mV @ 2mA, 20mA
250nA (ICBO)
40 @ 10mA, 10V
625 mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
MJD31T4
onsemi

TRANS POWER NPN 3A 40V DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 15 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
pacchetto: -
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3 A
40 V
1.2V @ 375mA, 3A
50µA
10 @ 3A, 4V
15 W
3MHz
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK