Pagina 53 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Singoli

Record 20.307
Pagina  53/726
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC859CW/ZLX
Nexperia USA Inc.

TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3
pacchetto: SC-70, SOT-323
Azione3.888
-
-
-
-
-
-
-
-
Surface Mount
SC-70, SOT-323
SC-70-3
JANTXV2N6676T1
Microsemi Corporation

TRANS NPN 300V 15A

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.296
-
-
-
-
-
-
-
-
-
-
-
JANTXV2N6249T1
Microsemi Corporation

TRANS NPN 200V 10A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
  • Power - Max: 6W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
pacchetto: TO-254-3, TO-254AA (Straight Leads)
Azione4.288
10A
200V
1.5V @ 1A, 10A
1mA
10 @ 10A, 3V
6W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
MJD6039T4
ON Semiconductor

TRANS NPN DARL 80V 4A DPAK

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
  • Power - Max: 1.75W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione4.256
4A
80V
2.5V @ 8mA, 2A
10µA
500 @ 2A, 4V
1.75W
-
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
MJB45H11
ON Semiconductor

TRANS PNP 80V 10A D2PAK-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
  • Power - Max: 2W
  • Frequency - Transition: 40MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione2.784
10A
80V
1V @ 400mA, 8A
10µA
40 @ 4A, 1V
2W
40MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
FZT658TC
Diodes Incorporated

TRANS NPN 400V 0.5A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 10V
  • Power - Max: 2W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: TO-261-4, TO-261AA
Azione5.664
500mA
400V
500mV @ 10mA, 100mA
100nA (ICBO)
40 @ 200mA, 10V
2W
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
FZT1048ATC
Diodes Incorporated

TRANS NPN 17.5V 5A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 17.5V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 5A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 2.5W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: TO-261-4, TO-261AA
Azione6.848
5A
17.5V
350mV @ 25mA, 5A
10nA
300 @ 1A, 2V
2.5W
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BC327ABU
Fairchild/ON Semiconductor

TRANS PNP 45V 0.8A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione2.864
800mA
45V
700mV @ 50mA, 500mA
100nA
100 @ 100mA, 1V
625mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
JANTXV2N3507A
Microsemi Corporation

TRANS NPN 50V 3A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione5.840
3A
50V
1.5V @ 250mA, 2.5A
-
30 @ 1.5A, 2V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
BCW66FR
Nexperia USA Inc.

BCW66FSOT23TO-236AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione5.408
800mA
45V
450mV @ 50mA, 500mA
5µA (ICBO)
100 @ 100mA, 1V
250mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
TTC5200(Q)
Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO-3PL

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 150W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(L)
pacchetto: TO-3PL
Azione4.480
15A
230V
3V @ 800mA, 8A
5µA (ICBO)
80 @ 1A, 5V
150W
30MHz
150°C (TJ)
Through Hole
TO-3PL
TO-3P(L)
hot PMBT2907A,215
Nexperia USA Inc.

TRANS PNP 60V 0.6A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione37.200
600mA
60V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
250mW
200MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
hot BSR16
Fairchild/ON Semiconductor

TRANS PNP 60V 0.8A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 350mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione1.527.852
800mA
60V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
350mW
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
PBSS4021PT,215
Nexperia USA Inc.

TRANS PNP 20V 3.5A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3.5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 330mV @ 400mA, 4A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2A, 2V
  • Power - Max: 1.1W
  • Frequency - Transition: 155MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione23.910
3.5A
20V
330mV @ 400mA, 4A
100nA
140 @ 2A, 2V
1.1W
155MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
MMSTA06-7-F
Diodes Incorporated

TRANS NPN 80V 0.5A SC70-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: SC-70, SOT-323
Azione46.932
500mA
80V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
200mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
NTE2303
NTE Electronics, Inc

TRANS NPN 750V 2.5A TO220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2.5 A
  • Voltage - Collector Emitter Breakdown (Max): 750 V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 660mA, 2A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 65 W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacchetto: -
Request a Quote
2.5 A
750 V
5V @ 660mA, 2A
1mA
-
65 W
4MHz
-65°C ~ 125°C (TJ)
Through Hole
TO-220-3
TO-220
MNS2N3637UBP-TR
Microchip Technology

TRANS PNP 175V 1A UB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 175 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1.5 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
Request a Quote
1 A
175 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
1.5 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
SJE5959LFVK
onsemi

BIP C77 PNP SPECIAL LF

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SCR573D3TL1
Rohm Semiconductor

TRANS NPN 50V 3A TO252

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
  • Power - Max: 10 W
  • Frequency - Transition: 320MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
pacchetto: -
Azione17.439
3 A
50 V
350mV @ 50mA, 1A
1µA (ICBO)
180 @ 100mA, 3V
10 W
320MHz
150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
JANS2N3506
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
pacchetto: -
Request a Quote
3 A
40 V
1.5V @ 250mA, 2.5A
1µA
50 @ 500mA, 1V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
MSR2N2907A
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
pacchetto: -
Request a Quote
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
MPS2907-AP
Micro Commercial Co

TRANS PNP 40V 0.6A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 625 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
pacchetto: -
Request a Quote
600 mA
40 V
600mV @ 50mA, 500mA
100nA
100 @ 150mA, 10V
625 mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92
JAN2N2945AUB
Microchip Technology

TRANS PNP 20V 0.1A UB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
  • Power - Max: 400 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
Request a Quote
100 mA
20 V
-
10µA (ICBO)
70 @ 1mA, 500mV
400 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
JANTXV2N6676
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15 A
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
  • Power - Max: 6 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AD (TO-3)
pacchetto: -
Request a Quote
15 A
300 V
1V @ 3A, 15A
100µA
15 @ 1A, 3V
6 W
-
-65°C ~ 200°C
Through Hole
TO-204AA, TO-3
TO-204AD (TO-3)
PZTA44-TP
Micro Commercial Co

TRANS NPN 400V 0.2A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: 20MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: -
Azione74.451
200 mA
400 V
750mV @ 5mA, 50mA
100nA (ICBO)
50 @ 10mA, 10V
1 W
20MHz
125°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
NTE315
NTE Electronics, Inc

TRANS NPN 50V 1A TO92L

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 200nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 199 @ 100mA, 2V
  • Power - Max: 750 mW
  • Frequency - Transition: -
  • Operating Temperature: 120°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92L
pacchetto: -
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1 A
50 V
300mV @ 50mA, 1A
200nA (ICBO)
199 @ 100mA, 2V
750 mW
-
120°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92L
2SD1815TR-AQ
Diotec Semiconductor

IC

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
  • Power - Max: 20 W
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
pacchetto: -
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3 A
100 V
400mV @ 150mA, 1.5A
1µA (ICBO)
200 @ 500mA, 5V
20 W
180MHz
150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
MMBT5551-13P
Micro Commercial Co

BIPOLAR TRANSISTORS

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 160 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: -
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600 mA
160 V
200mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 5V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23