Pagina 498 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BD179	STMicroelectronics	TRANS NPN 80V 3A SOT-32 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2V, 1A Power - Max: 30W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: SOT-32	pacchetto: TO-225AA, TO-126-3	Azione114.792	3A	80V	800mV @ 100mA, 1A	100µA (ICBO)	15 @ 2V, 1A	30W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	SOT-32
2SC4115STPQ	Rohm Semiconductor	TRANS NPN 20V 2A 3-PIN SPT Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 400mW Frequency - Transition: 290MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	pacchetto: SC-72 Formed Leads	Azione3.744	2A	20V	500mV @ 100mA, 2A	100nA (ICBO)	120 @ 100mA, 2V	400mW	290MHz	150°C (TJ)	Through Hole	SC-72 Formed Leads	SPT
BC369_J35Z	Fairchild/ON Semiconductor	TRANS PNP 20V 1.5A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 625mW Frequency - Transition: 45MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione3.328	1.5A	20V	500mV @ 100mA, 1A	10µA (ICBO)	85 @ 500mA, 1V	625mW	45MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC214LB_J35Z	Fairchild/ON Semiconductor	TRANS PNP 30V 0.5A TO-9 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione3.584	500mA	30V	600mV @ 5mA, 100mA	15nA (ICBO)	140 @ 2mA, 5V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC183C_J35Z	Fairchild/ON Semiconductor	TRANS NPN 30V 0.1A TO-9 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Power - Max: 350mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione4.624	100mA	30V	600mV @ 5mA, 100mA	15nA (ICBO)	120 @ 2mA, 5V	350mW	150MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPSA12RLRAG	ON Semiconductor	TRANS NPN DARL 20V TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione5.328	-	20V	1V @ 10µA, 10mA	100nA (ICBO)	20000 @ 10mA, 5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SA1020	ON Semiconductor	TRANS PNP 50V 2A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92	pacchetto: TO-226-3, TO-92-3 Long Body	Azione2.378.832	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92
2N3392	Fairchild/ON Semiconductor	TRANS NPN 25V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione6.224	500mA	25V	-	100nA (ICBO)	150 @ 2mA, 4.5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
JANTXV2N3499	Microsemi Corporation	TRANS NPN 100V 0.5A TO-39 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	pacchetto: TO-205AD, TO-39-3 Metal Can	Azione6.416	500mA	100V	600mV @ 30mA, 300mA	10µA (ICBO)	100 @ 150mA, 10V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
NJVMJB44H11T4G	ON Semiconductor	TRANS NPN 80V 10A D2PAK-3 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Power - Max: 2W Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione4.848	10A	80V	1V @ 400mA, 8A	10µA	40 @ 4A, 1V	2W	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
NJVMJD45H11G	ON Semiconductor	TRANS PNP 50V 8A DPAK-4 Transistor Type: PNP Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Power - Max: 1.75W Frequency - Transition: 90MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione5.776	8A	50V	1V @ 400mA, 8A	1µA	40 @ 4A, 1V	1.75W	90MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
SPZT3904T1G	ON Semiconductor	TRANS NPN 40V 0.2A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 1.5W Frequency - Transition: 300MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-3	pacchetto: TO-261-4, TO-261AA	Azione6.928	200mA	40V	300mV @ 5mA, 50mA	-	100 @ 10mA, 1V	1.5W	300MHz	-	Surface Mount	TO-261-4, TO-261AA	SOT-223-3
CMPT2484 BK	Central Semiconductor Corp	TRANS NPN 60V 0.05A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione7.680	50mA	60V	350mV @ 100µA, 1mA	10nA (ICBO)	250 @ 1mA, 5V	350mW	-	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
ZXTN25100DGTA	Diodes Incorporated	TRANS NPN 100V 3A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 500mV @ 600mA, 3A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Power - Max: 3W Frequency - Transition: 175MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: TO-261-4, TO-261AA	Azione604.656	3A	100V	500mV @ 600mA, 3A	50nA (ICBO)	300 @ 10mA, 2V	3W	175MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BCP53-10,115	Nexperia USA Inc.	TRANS PNP 80V 1A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 1W Frequency - Transition: 145MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: TO-261-4, TO-261AA	Azione4.512	1A	80V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	1W	145MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
JANTX2N3637	Microsemi Corporation	TRANS PNP 175V 1A TO-39 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	pacchetto: TO-205AA, TO-5-3 Metal Can	Azione6.672	1A	175V	600mV @ 5mA, 50mA	10µA	100 @ 50mA, 10V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
TIP142G	ON Semiconductor	TRANS NPN DARL 100V 10A TO247 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	pacchetto: TO-247-3	Azione18.360	10A	100V	3V @ 40mA, 10A	2mA	1000 @ 5A, 4V	125W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
2SD2142KT146	Rohm Semiconductor	TRANS NPN DARL 30V 0.3A SOT23-3 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione2.410.896	300mA	30V	1.5V @ 100µA, 100mA	100nA (ICBO)	10000 @ 100mA, 5V	200mW	200MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
NTE2539	NTE Electronics, Inc	TRANS NPN 400V 25A TO3P Transistor Type: NPN Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 800mV @ 3.2A, 16A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3.2A, 5V Power - Max: 2.5 W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	pacchetto: -	Request a Quote	25 A	400 V	800mV @ 3.2A, 16A	10µA (ICBO)	15 @ 3.2A, 5V	2.5 W	20MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
MJD41CQ-13	Diodes Incorporated	PWR HI VOLTAGE TRANSISTOR TO252 Transistor Type: NPN Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V Power - Max: 1.5 W Frequency - Transition: 3MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	pacchetto: -	Azione7.425	6 A	100 V	1.5V @ 600mA, 6A	1µA	30 @ 300mA, 4V	1.5 W	3MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)
S8050	EVVO	TRANS NPN 25V 0.5A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V Power - Max: 300 mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacchetto: -	Azione3.600	500 mA	25 V	600mV @ 50mA, 500mA	100nA	120 @ 50mA, 1V	300 mW	150MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SA1688-5-TL-E	Sanyo	PNP EPITAXIAL PLANAR SILICON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MMBT3904FN3_R1_00001	Panjit International Inc.	TRANS NPN 40V 0.2A 3DFN Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 250 mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Supplier Device Package: 3-DFN (1x0.6)	pacchetto: -	Azione84.015	200 mA	40 V	300mV @ 5mA, 50mA	50nA	100 @ 10mA, 1V	250 mW	-	-55°C ~ 150°C (TJ)	Surface Mount	3-UFDFN	3-DFN (1x0.6)
BC817-16B5003	Infineon Technologies	TRANS NPN 45V 0.5A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 500 mW Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3-11	pacchetto: -	Request a Quote	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	100 @ 100mA, 1V	500 mW	170MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3-11
CP225-2N2218A-WN	Central Semiconductor Corp	TRANS NPN 40V 0.8A DIE Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800 mW Frequency - Transition: 250MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacchetto: -	Request a Quote	800 mA	40 V	1V @ 50mA, 500mA	10nA (ICBO)	40 @ 150mA, 10V	800 mW	250MHz	-65°C ~ 200°C (TJ)	Surface Mount	Die	Die
JANSM2N2221AUB	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	pacchetto: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
FMMT416TA	Diodes Incorporated	AVALANCHE TRANSISTOR SOT23 T&R 3 Transistor Type: NPN - Avalanche Mode Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Power - Max: 500 mW Frequency - Transition: 40MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (Type DN)	pacchetto: -	Request a Quote	500 mA	100 V	100mV @ 1mA, 10mA	100nA (ICBO)	100 @ 10mA, 10V	500 mW	40MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (Type DN)
KSD1616-G-AP	Micro Commercial Co	TRANS NPN 50V 1A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 750 mW Frequency - Transition: 160MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	pacchetto: -	Request a Quote	1 A	50 V	300mV @ 50mA, 1A	100nA (ICBO)	200 @ 100mA, 2V	750 mW	160MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92

BD179

STMicroelectronics

TRANS NPN 80V 3A SOT-32

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2V, 1A
Power - Max: 30W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: SOT-32

pacchetto: TO-225AA, TO-126-3

Azione114.792

3A

80V

800mV @ 100mA, 1A

100µA (ICBO)

15 @ 2V, 1A

30W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

SOT-32

2SC4115STPQ

Rohm Semiconductor

TRANS NPN 20V 2A 3-PIN SPT

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 400mW
Frequency - Transition: 290MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

pacchetto: SC-72 Formed Leads

Azione3.744

2A

20V

500mV @ 100mA, 2A

100nA (ICBO)

120 @ 100mA, 2V

400mW

290MHz

150°C (TJ)

Through Hole

SC-72 Formed Leads

SPT

BC369_J35Z

Fairchild/ON Semiconductor

TRANS PNP 20V 1.5A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 625mW
Frequency - Transition: 45MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione3.328

1.5A

20V

500mV @ 100mA, 1A

10µA (ICBO)

85 @ 500mA, 1V

625mW

45MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC214LB_J35Z

Fairchild/ON Semiconductor

TRANS PNP 30V 0.5A TO-9

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione3.584

500mA

30V

600mV @ 5mA, 100mA

15nA (ICBO)

140 @ 2mA, 5V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC183C_J35Z

Fairchild/ON Semiconductor

TRANS NPN 30V 0.1A TO-9

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione4.624

100mA

30V

600mV @ 5mA, 100mA

15nA (ICBO)

120 @ 2mA, 5V

350mW

150MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPSA12RLRAG

ON Semiconductor

TRANS NPN DARL 20V TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione5.328

-

20V

1V @ 10µA, 10mA

100nA (ICBO)

20000 @ 10mA, 5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SA1020

ON Semiconductor

TRANS PNP 50V 2A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92

pacchetto: TO-226-3, TO-92-3 Long Body

Azione2.378.832

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92

2N3392

Fairchild/ON Semiconductor

TRANS NPN 25V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione6.224

500mA

25V

-

100nA (ICBO)

150 @ 2mA, 4.5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

JANTXV2N3499

Microsemi Corporation

TRANS NPN 100V 0.5A TO-39

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

pacchetto: TO-205AD, TO-39-3 Metal Can

Azione6.416

500mA

100V

600mV @ 30mA, 300mA

10µA (ICBO)

100 @ 150mA, 10V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

NJVMJB44H11T4G

ON Semiconductor

TRANS NPN 80V 10A D2PAK-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 2W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione4.848

10A

80V

1V @ 400mA, 8A

10µA

40 @ 4A, 1V

2W

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

NJVMJD45H11G

ON Semiconductor

TRANS PNP 50V 8A DPAK-4

Transistor Type: PNP
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 1.75W
Frequency - Transition: 90MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione5.776

8A

50V

1V @ 400mA, 8A

1µA

40 @ 4A, 1V

1.75W

90MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

SPZT3904T1G

ON Semiconductor

TRANS NPN 40V 0.2A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 1.5W
Frequency - Transition: 300MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3

pacchetto: TO-261-4, TO-261AA

Azione6.928

200mA

40V

300mV @ 5mA, 50mA

-

100 @ 10mA, 1V

1.5W

300MHz

-

Surface Mount

TO-261-4, TO-261AA

SOT-223-3

CMPT2484 BK

Central Semiconductor Corp

TRANS NPN 60V 0.05A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione7.680

50mA

60V

350mV @ 100µA, 1mA

10nA (ICBO)

250 @ 1mA, 5V

350mW

-

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

ZXTN25100DGTA

Diodes Incorporated

TRANS NPN 100V 3A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 600mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Power - Max: 3W
Frequency - Transition: 175MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

Azione604.656

3A

100V

500mV @ 600mA, 3A

50nA (ICBO)

300 @ 10mA, 2V

3W

175MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BCP53-10,115

Nexperia USA Inc.

TRANS PNP 80V 1A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

Azione4.512

1A

80V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

1W

145MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

JANTX2N3637

Microsemi Corporation

TRANS PNP 175V 1A TO-39

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 175V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

pacchetto: TO-205AA, TO-5-3 Metal Can

Azione6.672

1A

175V

600mV @ 5mA, 50mA

10µA

100 @ 50mA, 10V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

TIP142G

ON Semiconductor

TRANS NPN DARL 100V 10A TO247

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Power - Max: 125W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

pacchetto: TO-247-3

Azione18.360

10A

100V

3V @ 40mA, 10A

2mA

1000 @ 5A, 4V

125W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-247-3

2SD2142KT146

Rohm Semiconductor

TRANS NPN DARL 30V 0.3A SOT23-3

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione2.410.896

300mA

30V

1.5V @ 100µA, 100mA

100nA (ICBO)

10000 @ 100mA, 5V

200mW

200MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

NTE2539

NTE Electronics, Inc

TRANS NPN 400V 25A TO3P

Transistor Type: NPN
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 3.2A, 16A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3.2A, 5V
Power - Max: 2.5 W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

pacchetto: -

Request a Quote

25 A

400 V

800mV @ 3.2A, 16A

10µA (ICBO)

15 @ 3.2A, 5V

2.5 W

20MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

MJD41CQ-13

Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR TO252

Transistor Type: NPN
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Power - Max: 1.5 W
Frequency - Transition: 3MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)

pacchetto: -

Azione7.425

6 A

100 V

1.5V @ 600mA, 6A

1µA

30 @ 300mA, 4V

1.5 W

3MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

S8050

EVVO

TRANS NPN 25V 0.5A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Power - Max: 300 mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

pacchetto: -

Azione3.600

500 mA

25 V

600mV @ 50mA, 500mA

100nA

120 @ 50mA, 1V

300 mW

150MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SA1688-5-TL-E

Sanyo

PNP EPITAXIAL PLANAR SILICON

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

MMBT3904FN3_R1_00001

Panjit International Inc.

TRANS NPN 40V 0.2A 3DFN

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 250 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Supplier Device Package: 3-DFN (1x0.6)

pacchetto: -

Azione84.015

200 mA

40 V

300mV @ 5mA, 50mA

50nA

100 @ 10mA, 1V

250 mW

-

-55°C ~ 150°C (TJ)

Surface Mount

3-UFDFN

3-DFN (1x0.6)

BC817-16B5003

Infineon Technologies

TRANS NPN 45V 0.5A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 500 mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3-11

pacchetto: -

Request a Quote

500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

100 @ 100mA, 1V

500 mW

170MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3-11

CP225-2N2218A-WN

Central Semiconductor Corp

TRANS NPN 40V 0.8A DIE

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 800 mW
Frequency - Transition: 250MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

pacchetto: -

Request a Quote

800 mA

40 V

1V @ 50mA, 500mA

10nA (ICBO)

40 @ 150mA, 10V

800 mW

250MHz

-65°C ~ 200°C (TJ)

Surface Mount

Die

JANSM2N2221AUB

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

pacchetto: -

Request a Quote

800 mA

50 V

1V @ 50mA, 500mA

50nA

40 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

FMMT416TA

Diodes Incorporated

AVALANCHE TRANSISTOR SOT23 T&R 3

Transistor Type: NPN - Avalanche Mode
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Power - Max: 500 mW
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (Type DN)

pacchetto: -

Request a Quote

500 mA

100 V

100mV @ 1mA, 10mA

100nA (ICBO)

100 @ 10mA, 10V

500 mW

40MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23 (Type DN)

KSD1616-G-AP

Micro Commercial Co

TRANS NPN 50V 1A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 750 mW
Frequency - Transition: 160MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

pacchetto: -

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1 A

50 V

300mV @ 50mA, 1A

100nA (ICBO)

200 @ 100mA, 2V

750 mW

160MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92