Pagina 49 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BD246-S	Bourns Inc.	TRANS PNP 45V 10A Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 10A, 4V Power - Max: 3W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	pacchetto: TO-218-3	Azione5.280	10A	45V	4V @ 2.5A, 10A	700µA	4 @ 10A, 4V	3W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-218-3	SOT-93
MPSW45ARLRAG	ON Semiconductor	TRANS NPN DARL 50V 1A TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92	pacchetto: TO-226-3, TO-92-3 Long Body (Formed Leads)	Azione5.600	1A	50V	1.5V @ 2mA, 1A	100nA (ICBO)	25000 @ 200mA, 5V	1W	100MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-92
BC373	ON Semiconductor	TRANS NPN DARL 80V 1A TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.1V @ 250µA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione6.544	1A	80V	1.1V @ 250µA, 250mA	100nA (ICBO)	10000 @ 100mA, 5V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BC327-016G	ON Semiconductor	TRANS PNP 45V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 260MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione6.256	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	260MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N5551RLRPG	ON Semiconductor	TRANS NPN 160V 0.6A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione29.760	600mA	160V	200mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	625mW	300MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MMBT4401K	Fairchild/ON Semiconductor	TRANS NPN 40V 0.6A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Power - Max: 350mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione214.860	600mA	40V	750mV @ 50mA, 500mA	-	100 @ 150mA, 1V	350mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BUV20	STMicroelectronics	TRANS NPN 125V 50A TO-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50A Voltage - Collector Emitter Breakdown (Max): 125V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5A, 50A Current - Collector Cutoff (Max): 3mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25A, 2V Power - Max: 250W Frequency - Transition: 8MHz Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	pacchetto: TO-204AA, TO-3	Azione120.468	50A	125V	1.2V @ 5A, 50A	3mA	20 @ 25A, 2V	250W	8MHz	200°C (TJ)	Chassis Mount	TO-204AA, TO-3	TO-3
2N5210TF	Fairchild/ON Semiconductor	TRANS NPN 50V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V Power - Max: 625mW Frequency - Transition: 30MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione5.040	100mA	50V	700mV @ 1mA, 10mA	50nA (ICBO)	200 @ 100µA, 5V	625mW	30MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SC3979A	Panasonic Electronic Components	TRANS NPN 800V 3A TO-220F Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 800V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 160mA, 800mA Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 800mA, 5V Power - Max: 2W Frequency - Transition: 10MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-A1	pacchetto: TO-220-3 Full Pack	Azione4.688	3A	800V	1.5V @ 160mA, 800mA	50µA (ICBO)	6 @ 800mA, 5V	2W	10MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-A1
2N6517	ON Semiconductor	TRANS NPN 350V 0.5A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione6.732.000	500mA	350V	1V @ 5mA, 50mA	50nA (ICBO)	20 @ 50mA, 10V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BC847BWH6433XTMA1	Infineon Technologies	TRANS NPN 45V 0.1A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	pacchetto: SC-70, SOT-323	Azione6.704	100mA	45V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	250mW	250MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCY59-X	Central Semiconductor Corp	THROUGH-HOLE TRANSISTOR-SMALL SI Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	pacchetto: TO-206AA, TO-18-3 Metal Can	Azione18.336	100mA	45V	700mV @ 2.5mA, 100mA	10nA (ICBO)	380 @ 2mA, 5V	1W	150MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2DD2652-7	Diodes Incorporated	TRANS NPN 12V 1.5A SOT-323 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Power - Max: 300mW Frequency - Transition: 260MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	pacchetto: SC-70, SOT-323	Azione72.000	1.5A	12V	200mV @ 25mA, 500mA	100nA (ICBO)	270 @ 200mA, 2V	300mW	260MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
2SAR533P5T100	Rohm Semiconductor	PNP -50V -3A MEDIUM POWER TRANSI Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V Power - Max: 500mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	pacchetto: TO-243AA	Azione4.000	3A	50V	400mV @ 50mA, 1A	1µA (ICBO)	180 @ 50mA, 3V	500mW	300MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
ZXT953KTC	Diodes Incorporated	TRANS PNP 100V 5A D-PAK Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 390mV @ 500mA, 5A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 4.2W Frequency - Transition: 125MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-3	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione105.372	5A	100V	390mV @ 500mA, 5A	20nA (ICBO)	100 @ 1A, 1V	4.2W	125MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3
KST4403MTF	Fairchild/ON Semiconductor	TRANS PNP 40V 0.6A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 350mW Frequency - Transition: 200MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione741.588	600mA	40V	750mV @ 50mA, 500mA	-	100 @ 150mA, 2V	350mW	200MHz	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SA1492	Sanken	TRANS PNP 180V 15A TO-3P Transistor Type: PNP Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V Power - Max: 130W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	pacchetto: TO-3P-3, SC-65-3	Azione70.200	15A	180V	2V @ 500mA, 5A	100µA (ICBO)	50 @ 3A, 4V	130W	20MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
FMMTA42TA	Diodes Incorporated	TRANS NPN 300V 0.2A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 330mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione1.073.724	200mA	300V	500mV @ 2mA, 20mA	100nA (ICBO)	40 @ 30mA, 10V	330mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
PMST5550,115	Nexperia USA Inc.	TRANS NPN 140V 0.3A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 200mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	pacchetto: SC-70, SOT-323	Azione148.518	300mA	140V	250mV @ 5mA, 50mA	100nA (ICBO)	60 @ 10mA, 5V	200mW	300MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BC817-25QC-QZ	Nexperia USA Inc.	SMALL SIGNAL BIPOLAR IN DFN PACK Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 380 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1412D-3	pacchetto: -	Request a Quote	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	380 mW	100MHz	150°C (TJ)	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1412D-3
2SC4521T-TD-E	onsemi	NPN EPITAXIAL PLANAR SILICON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BCP56-10T-QF	Nexperia USA Inc.	TRANS NPN 80V 1A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 600 mW Frequency - Transition: 155MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	600 mW	155MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
JANKCCF2N3498	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	pacchetto: -	Request a Quote	500 mA	100 V	600mV @ 30mA, 300mA	10µA (ICBO)	40 @ 150mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTXV2N3765	Microchip Technology	TRANS PNP 60V 1.5A TO46 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46 (TO-206AB)	pacchetto: -	Request a Quote	1.5 A	60 V	900mV @ 100mA, 1A	100µA (ICBO)	40 @ 500mA, 1V	500 mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46 (TO-206AB)
2N4959UB	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BCP56-16T-QX	Nexperia USA Inc.	TRANS NPN 80V 1A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 600 mW Frequency - Transition: 155MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: -	Azione15.000	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	600 mW	155MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2SB734-AZ	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANS PNP Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V Power - Max: 1 W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: -	pacchetto: -	Request a Quote	1 A	50 V	600mV @ 50mA, 1A	100nA (ICBO)	135 @ 100mA, 2V	1 W	80MHz	150°C (TJ)	Through Hole	3-SSIP	-
KTC3198-GR	Taiwan Semiconductor Corporation	TO-92, 60V, 0.15A, NPN BIPOLAR T Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 500 mW Frequency - Transition: 80MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	pacchetto: -	Request a Quote	150 mA	50 V	250mV @ 10mA, 100mA	100nA (ICBO)	70 @ 2mA, 6V	500 mW	80MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92

BD246-S

Bourns Inc.

TRANS PNP 45V 10A

Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 10A, 4V
Power - Max: 3W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93

pacchetto: TO-218-3

Azione5.280

10A

45V

4V @ 2.5A, 10A

700µA

4 @ 10A, 4V

3W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-218-3

SOT-93

MPSW45ARLRAG

ON Semiconductor

TRANS NPN DARL 50V 1A TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92

pacchetto: TO-226-3, TO-92-3 Long Body (Formed Leads)

Azione5.600

1A

50V

1.5V @ 2mA, 1A

100nA (ICBO)

25000 @ 200mA, 5V

1W

100MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

TO-92

BC373

ON Semiconductor

TRANS NPN DARL 80V 1A TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 250µA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione6.544

1A

80V

1.1V @ 250µA, 250mA

100nA (ICBO)

10000 @ 100mA, 5V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BC327-016G

ON Semiconductor

TRANS PNP 45V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 260MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione6.256

800mA

45V

700mV @ 50mA, 500mA

100nA

100 @ 100mA, 1V

625mW

260MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N5551RLRPG

ON Semiconductor

TRANS NPN 160V 0.6A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione29.760

600mA

160V

200mV @ 5mA, 50mA

50nA (ICBO)

80 @ 10mA, 5V

625mW

300MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MMBT4401K

Fairchild/ON Semiconductor

TRANS NPN 40V 0.6A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Power - Max: 350mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione214.860

600mA

40V

750mV @ 50mA, 500mA

-

100 @ 150mA, 1V

350mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BUV20

STMicroelectronics

TRANS NPN 125V 50A TO-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 125V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5A, 50A
Current - Collector Cutoff (Max): 3mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25A, 2V
Power - Max: 250W
Frequency - Transition: 8MHz
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

pacchetto: TO-204AA, TO-3

Azione120.468

50A

125V

1.2V @ 5A, 50A

3mA

20 @ 25A, 2V

250W

8MHz

200°C (TJ)

Chassis Mount

TO-204AA, TO-3

TO-3

2N5210TF

Fairchild/ON Semiconductor

TRANS NPN 50V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
Power - Max: 625mW
Frequency - Transition: 30MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione5.040

100mA

50V

700mV @ 1mA, 10mA

50nA (ICBO)

200 @ 100µA, 5V

625mW

30MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SC3979A

Panasonic Electronic Components

TRANS NPN 800V 3A TO-220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 800V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 160mA, 800mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 800mA, 5V
Power - Max: 2W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-A1

pacchetto: TO-220-3 Full Pack

Azione4.688

3A

800V

1.5V @ 160mA, 800mA

50µA (ICBO)

6 @ 800mA, 5V

2W

10MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F-A1

2N6517

ON Semiconductor

TRANS NPN 350V 0.5A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione6.732.000

500mA

350V

1V @ 5mA, 50mA

50nA (ICBO)

20 @ 50mA, 10V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BC847BWH6433XTMA1

Infineon Technologies

TRANS NPN 45V 0.1A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

pacchetto: SC-70, SOT-323

Azione6.704

100mA

45V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

250mW

250MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCY59-X

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

pacchetto: TO-206AA, TO-18-3 Metal Can

Azione18.336

100mA

45V

700mV @ 2.5mA, 100mA

10nA (ICBO)

380 @ 2mA, 5V

1W

150MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

2DD2652-7

Diodes Incorporated

TRANS NPN 12V 1.5A SOT-323

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Power - Max: 300mW
Frequency - Transition: 260MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

pacchetto: SC-70, SOT-323

Azione72.000

1.5A

12V

200mV @ 25mA, 500mA

100nA (ICBO)

270 @ 200mA, 2V

300mW

260MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

2SAR533P5T100

Rohm Semiconductor

PNP -50V -3A MEDIUM POWER TRANSI

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

pacchetto: TO-243AA

Azione4.000

3A

50V

400mV @ 50mA, 1A

1µA (ICBO)

180 @ 50mA, 3V

500mW

300MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

ZXT953KTC

Diodes Incorporated

TRANS PNP 100V 5A D-PAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 4.2W
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-3

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione105.372

5A

100V

390mV @ 500mA, 5A

20nA (ICBO)

100 @ 1A, 1V

4.2W

125MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252-3

KST4403MTF

Fairchild/ON Semiconductor

TRANS PNP 40V 0.6A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 350mW
Frequency - Transition: 200MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione741.588

600mA

40V

750mV @ 50mA, 500mA

-

100 @ 150mA, 2V

350mW

200MHz

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SA1492

Sanken

TRANS PNP 180V 15A TO-3P

Transistor Type: PNP
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 180V
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
Power - Max: 130W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

pacchetto: TO-3P-3, SC-65-3

Azione70.200

15A

180V

2V @ 500mA, 5A

100µA (ICBO)

50 @ 3A, 4V

130W

20MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

FMMTA42TA

Diodes Incorporated

TRANS NPN 300V 0.2A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 330mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione1.073.724

200mA

300V

500mV @ 2mA, 20mA

100nA (ICBO)

40 @ 30mA, 10V

330mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

PMST5550,115

Nexperia USA Inc.

TRANS NPN 140V 0.3A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 200mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

pacchetto: SC-70, SOT-323

Azione148.518

300mA

140V

250mV @ 5mA, 50mA

100nA (ICBO)

60 @ 10mA, 5V

200mW

300MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BC817-25QC-QZ

Nexperia USA Inc.

SMALL SIGNAL BIPOLAR IN DFN PACK

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 380 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1412D-3

pacchetto: -

Request a Quote

500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

380 mW

100MHz

150°C (TJ)

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1412D-3

2SC4521T-TD-E

onsemi

NPN EPITAXIAL PLANAR SILICON

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

BCP56-10T-QF

Nexperia USA Inc.

TRANS NPN 80V 1A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 600 mW
Frequency - Transition: 155MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: -

Request a Quote

1 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

600 mW

155MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

JANKCCF2N3498

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

pacchetto: -

Request a Quote

500 mA

100 V

600mV @ 30mA, 300mA

10µA (ICBO)

40 @ 150mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANTXV2N3765

Microchip Technology

TRANS PNP 60V 1.5A TO46

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46 (TO-206AB)

pacchetto: -

Request a Quote

1.5 A

60 V

900mV @ 100mA, 1A

100µA (ICBO)

40 @ 500mA, 1V

500 mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-206AB, TO-46-3 Metal Can

TO-46 (TO-206AB)

2N4959UB

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

BCP56-16T-QX

Nexperia USA Inc.

TRANS NPN 80V 1A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 600 mW
Frequency - Transition: 155MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: -

Azione15.000

1 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

600 mW

155MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2SB734-AZ

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANS PNP

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Power - Max: 1 W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SSIP
Supplier Device Package: -

pacchetto: -

Request a Quote

1 A

50 V

600mV @ 50mA, 1A

100nA (ICBO)

135 @ 100mA, 2V

1 W

80MHz

150°C (TJ)

Through Hole

3-SSIP

-

KTC3198-GR

Taiwan Semiconductor Corporation

TO-92, 60V, 0.15A, NPN BIPOLAR T

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 500 mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

pacchetto: -

Request a Quote

150 mA

50 V

250mV @ 10mA, 100mA

100nA (ICBO)

70 @ 2mA, 6V

500 mW

80MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92