Pagina 488 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BC636	Fairchild/ON Semiconductor	TRANS PNP 45V 1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione5.456	1A	45V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BD537J	Fairchild/ON Semiconductor	TRANS NPN 80V 8A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 2V Power - Max: 50W Frequency - Transition: 12MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	pacchetto: TO-220-3	Azione7.872	8A	80V	800mV @ 200mA, 2A	100µA	30 @ 2A, 2V	50W	12MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220
MJE15033	ON Semiconductor	TRANS PNP 250V 8A TO220AB Transistor Type: PNP Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V Power - Max: 2W Frequency - Transition: 30MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	pacchetto: TO-220-3	Azione80.028	8A	250V	500mV @ 100mA, 1A	10µA (ICBO)	10 @ 2A, 5V	2W	30MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
JAN2N3637	Microsemi Corporation	TRANS PNP 175V 1A Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	pacchetto: TO-205AD, TO-39-3 Metal Can	Azione3.632	1A	175V	600mV @ 5mA, 50mA	10µA	100 @ 50mA, 10V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
BCW61C,235	Nexperia USA Inc.	TRANS PNP 32V 0.1A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione4.000	100mA	32V	550mV @ 1.25mA, 50mA	20nA (ICBO)	250 @ 2mA, 5V	250mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BC546C B1G	TSC America Inc.	TRANSISTOR, NPN, 65V, 0.1A, 420A Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione4.832	100mA	65V	-	15nA (ICBO)	420 @ 2mA, 5V	500mW	-	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
BCX6825TA	Diodes Incorporated	TRANS NPN 20V 1A SOT-89 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	pacchetto: TO-243AA	Azione110.376	1A	20V	500mV @ 100mA, 1A	100nA (ICBO)	160 @ 500mA, 1V	1W	100MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
2SC4138	Sanken	TRANS NPN 400V 10A TO3P Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1.2A, 6A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 6A, 4V Power - Max: 80W Frequency - Transition: 10MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	pacchetto: TO-3P-3, SC-65-3	Azione13.248	10A	400V	500mV @ 1.2A, 6A	100µA (ICBO)	10 @ 6A, 4V	80W	10MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
PMBTA42,235	Nexperia USA Inc.	TRANS NPN 300V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 250mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione3.520	100mA	300V	500mV @ 2mA, 20mA	100nA (ICBO)	40 @ 30mA, 10V	250mW	50MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
MJL4281AG	ON Semiconductor	TRANS NPN 350V 15A TO264 Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V Power - Max: 230W Frequency - Transition: 35MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	pacchetto: TO-264-3, TO-264AA	Azione6.816	15A	350V	1V @ 800mA, 8A	100µA	80 @ 5A, 5V	230W	35MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264
2SC4024	Sanken	TRANS NPN 50V 10A TO220F Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 4V Power - Max: 35W Frequency - Transition: 24MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	pacchetto: TO-220-3 Full Pack	Azione87.576	10A	50V	500mV @ 100mA, 5A	10µA (ICBO)	300 @ 1A, 4V	35W	24MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
ZXTN08400BFFTA	Diodes Incorporated	TRANS NPN 400V 0.5A SOT23F-3 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 175mV @ 100mA, 500mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Power - Max: 1.5W Frequency - Transition: 40MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Supplier Device Package: SOT-23F	pacchetto: SOT-23-3 Flat Leads	Azione89.520	500mA	400V	175mV @ 100mA, 500mA	50nA (ICBO)	100 @ 50mA, 5V	1.5W	40MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 Flat Leads	SOT-23F
NTE2302	NTE Electronics, Inc	TRANS NPN 800V 5A TO3P Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 800 V Vce Saturation (Max) @ Ib, Ic: 5V @ 800mA, 4A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 5V Power - Max: 120 W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	pacchetto: -	Request a Quote	5 A	800 V	5V @ 800mA, 4A	10µA (ICBO)	8 @ 1A, 5V	120 W	3MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
JANTXV2N5153U3-TR	Microchip Technology	TRANS PNP 80V 2A U3 Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 1.16 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3	pacchetto: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	1mA	70 @ 2.5A, 5V	1.16 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U3
JANSF2N5151	Microchip Technology	TRANS PNP 80V 2A TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	pacchetto: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	30 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
BCW61BLT1	onsemi	TRANS GP BJT PNP 32V 0.1A 3 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Power - Max: 225 mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	pacchetto: -	Request a Quote	100 mA	32 V	550mV @ 1.25mA, 50mA	20nA	140 @ 2mA, 5V	225 mW	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BSS64AT116	Rohm Semiconductor	TRANS NPN 100V 0.1A SST3 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Power - Max: 200 mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	pacchetto: -	Request a Quote	100 mA	100 V	300mV @ 10mA, 100mA	100nA (ICBO)	30 @ 25mA, 1V	200 mW	140MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
2SC4107M-TON-ON	onsemi	NPN TRIPLE DIFFUSED PLANAR SIL Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1.2A, 6A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.2A, 5V Power - Max: 1.75 W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	pacchetto: -	Request a Quote	10 A	400 V	800mV @ 1.2A, 6A	10µA (ICBO)	20 @ 1.2A, 5V	1.75 W	20MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
ZTX658QSTZ	Diodes Incorporated	TRANS NPN 400V 0.5A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Power - Max: 1 W Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	pacchetto: -	Request a Quote	500 mA	400 V	500mV @ 10mA, 100mA	100nA (ICBO)	50 @ 100mA, 5V	1 W	50MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
2SD1436K-E	Renesas Electronics Corporation	POWER BIPOLAR TRANSISTOR NPN Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Power - Max: 80 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	pacchetto: -	Request a Quote	10 A	120 V	3V @ 100mA, 10A	10µA	1000 @ 5A, 3V	80 W	-	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
6685-MMBT3906	onsemi	TRANS PNP 40V 0.2A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 350 mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	pacchetto: -	Request a Quote	200 mA	40 V	400mV @ 5mA, 50mA	50nA	100 @ 10mA, 1V	350 mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2N1483	Microchip Technology	TRANS NPN 40V 3A TO8 Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1.20V @ 75mA, 750A Current - Collector Cutoff (Max): 15µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 750mA, 4V Power - Max: 1.75 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-233AA, TO-8-3 Metal Can Supplier Device Package: TO-8	pacchetto: -	Request a Quote	3 A	40 V	1.20V @ 75mA, 750A	15µA	20 @ 750mA, 4V	1.75 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-233AA, TO-8-3 Metal Can	TO-8
2SB1234-TB-E-SY	Sanyo	PNP EPITAXIAL PLANAR SILICON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BCX56-16-QX	Nexperia USA Inc.	BCX56-16-Q/SOT89/MPT3 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 500 mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	pacchetto: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	500 mW	180MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
FZT692BQTA	Diodes Incorporated	PWR LOW SAT TRANSISTOR SOT223 T& Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 70 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V Power - Max: 1.2 W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: -	Request a Quote	2 A	70 V	500mV @ 200mA, 2A	50nA	500 @ 100mA, 2V	1.2 W	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
CP304X-MPSA06-CT	Central Semiconductor Corp	TRANS NPN 80V 0.5A DIE Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: - Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacchetto: -	Request a Quote	500 mA	80 V	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	-	100MHz	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
2SB764E-SSH-ON	onsemi	PNP EPITAXIAL PLANAR SILICON Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V Power - Max: 900 mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: 3-MP	pacchetto: -	Request a Quote	1 A	50 V	700mV @ 50mA, 500mA	1µA (ICBO)	100 @ 50mA, 2V	900 mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	3-MP
MMBTA42-AU_R1_000A1	Panjit International Inc.	TRANS NPN 300V 0.5A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 250 mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacchetto: -	Azione8.700	500 mA	300 V	500mV @ 2mA, 20mA	100nA (ICBO)	40 @ 30mA, 10V	250 mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23

BC636

Fairchild/ON Semiconductor

TRANS PNP 45V 1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione5.456

1A

45V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BD537J

Fairchild/ON Semiconductor

TRANS NPN 80V 8A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 2V
Power - Max: 50W
Frequency - Transition: 12MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

pacchetto: TO-220-3

Azione7.872

8A

80V

800mV @ 200mA, 2A

100µA

30 @ 2A, 2V

50W

12MHz

150°C (TJ)

Through Hole

TO-220-3

TO-220

MJE15033

ON Semiconductor

TRANS PNP 250V 8A TO220AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Power - Max: 2W
Frequency - Transition: 30MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

pacchetto: TO-220-3

Azione80.028

8A

250V

500mV @ 100mA, 1A

10µA (ICBO)

10 @ 2A, 5V

2W

30MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

JAN2N3637

Microsemi Corporation

TRANS PNP 175V 1A

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 175V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

pacchetto: TO-205AD, TO-39-3 Metal Can

Azione3.632

1A

175V

600mV @ 5mA, 50mA

10µA

100 @ 50mA, 10V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

BCW61C,235

Nexperia USA Inc.

TRANS PNP 32V 0.1A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione4.000

100mA

32V

550mV @ 1.25mA, 50mA

20nA (ICBO)

250 @ 2mA, 5V

250mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BC546C B1G

TSC America Inc.

TRANSISTOR, NPN, 65V, 0.1A, 420A

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione4.832

100mA

65V

-

15nA (ICBO)

420 @ 2mA, 5V

500mW

-

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

BCX6825TA

Diodes Incorporated

TRANS NPN 20V 1A SOT-89

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

pacchetto: TO-243AA

Azione110.376

1A

20V

500mV @ 100mA, 1A

100nA (ICBO)

160 @ 500mA, 1V

1W

100MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

2SC4138

Sanken

TRANS NPN 400V 10A TO3P

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1.2A, 6A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 6A, 4V
Power - Max: 80W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

pacchetto: TO-3P-3, SC-65-3

Azione13.248

10A

400V

500mV @ 1.2A, 6A

100µA (ICBO)

10 @ 6A, 4V

80W

10MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

PMBTA42,235

Nexperia USA Inc.

TRANS NPN 300V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 250mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione3.520

100mA

300V

500mV @ 2mA, 20mA

100nA (ICBO)

40 @ 30mA, 10V

250mW

50MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

MJL4281AG

ON Semiconductor

TRANS NPN 350V 15A TO264

Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Power - Max: 230W
Frequency - Transition: 35MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264

pacchetto: TO-264-3, TO-264AA

Azione6.816

15A

350V

1V @ 800mA, 8A

100µA

80 @ 5A, 5V

230W

35MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264

2SC4024

Sanken

TRANS NPN 50V 10A TO220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 4V
Power - Max: 35W
Frequency - Transition: 24MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

pacchetto: TO-220-3 Full Pack

Azione87.576

10A

50V

500mV @ 100mA, 5A

10µA (ICBO)

300 @ 1A, 4V

35W

24MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

ZXTN08400BFFTA

Diodes Incorporated

TRANS NPN 400V 0.5A SOT23F-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 175mV @ 100mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Power - Max: 1.5W
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Supplier Device Package: SOT-23F

pacchetto: SOT-23-3 Flat Leads

Azione89.520

500mA

400V

175mV @ 100mA, 500mA

50nA (ICBO)

100 @ 50mA, 5V

1.5W

40MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 Flat Leads

SOT-23F

NTE2302

NTE Electronics, Inc

TRANS NPN 800V 5A TO3P

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Vce Saturation (Max) @ Ib, Ic: 5V @ 800mA, 4A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 5V
Power - Max: 120 W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

pacchetto: -

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5 A

800 V

5V @ 800mA, 4A

10µA (ICBO)

8 @ 1A, 5V

120 W

3MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

JANTXV2N5153U3-TR

Microchip Technology

TRANS PNP 80V 2A U3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1.16 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U3

pacchetto: -

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2 A

80 V

1.5V @ 500mA, 5A

1mA

70 @ 2.5A, 5V

1.16 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U3

JANSF2N5151

Microchip Technology

TRANS PNP 80V 2A TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

pacchetto: -

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2 A

80 V

1.5V @ 500mA, 5A

50µA

30 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

BCW61BLT1

onsemi

TRANS GP BJT PNP 32V 0.1A 3

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Power - Max: 225 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

pacchetto: -

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100 mA

32 V

550mV @ 1.25mA, 50mA

20nA

140 @ 2mA, 5V

225 mW

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BSS64AT116

Rohm Semiconductor

TRANS NPN 100V 0.1A SST3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Power - Max: 200 mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

pacchetto: -

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100 mA

100 V

300mV @ 10mA, 100mA

100nA (ICBO)

30 @ 25mA, 1V

200 mW

140MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

2SC4107M-TON-ON

onsemi

NPN TRIPLE DIFFUSED PLANAR SIL

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1.2A, 6A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.2A, 5V
Power - Max: 1.75 W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

pacchetto: -

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10 A

400 V

800mV @ 1.2A, 6A

10µA (ICBO)

20 @ 1.2A, 5V

1.75 W

20MHz

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

ZTX658QSTZ

Diodes Incorporated

TRANS NPN 400V 0.5A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Power - Max: 1 W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

pacchetto: -

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500 mA

400 V

500mV @ 10mA, 100mA

100nA (ICBO)

50 @ 100mA, 5V

1 W

50MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

2SD1436K-E

Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Power - Max: 80 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

pacchetto: -

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10 A

120 V

3V @ 100mA, 10A

10µA

1000 @ 5A, 3V

80 W

-

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

6685-MMBT3906

onsemi

TRANS PNP 40V 0.2A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 350 mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

pacchetto: -

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200 mA

40 V

400mV @ 5mA, 50mA

50nA

100 @ 10mA, 1V

350 mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2N1483

Microchip Technology

TRANS NPN 40V 3A TO8

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1.20V @ 75mA, 750A
Current - Collector Cutoff (Max): 15µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 750mA, 4V
Power - Max: 1.75 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-233AA, TO-8-3 Metal Can
Supplier Device Package: TO-8

pacchetto: -

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3 A

40 V

1.20V @ 75mA, 750A

15µA

20 @ 750mA, 4V

1.75 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-233AA, TO-8-3 Metal Can

TO-8

2SB1234-TB-E-SY

Sanyo

PNP EPITAXIAL PLANAR SILICON

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

BCX56-16-QX

Nexperia USA Inc.

BCX56-16-Q/SOT89/MPT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 500 mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

pacchetto: -

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1 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

500 mW

180MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

FZT692BQTA

Diodes Incorporated

PWR LOW SAT TRANSISTOR SOT223 T&

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V
Power - Max: 1.2 W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: -

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2 A

70 V

500mV @ 200mA, 2A

50nA

500 @ 100mA, 2V

1.2 W

150MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

CP304X-MPSA06-CT

Central Semiconductor Corp

TRANS NPN 80V 0.5A DIE

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: -
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

pacchetto: -

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500 mA

80 V

250mV @ 10mA, 100mA

100nA

100 @ 100mA, 1V

-

100MHz

-65°C ~ 150°C (TJ)

Surface Mount

Die

2SB764E-SSH-ON

onsemi

PNP EPITAXIAL PLANAR SILICON

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Power - Max: 900 mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: 3-MP

pacchetto: -

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1 A

50 V

700mV @ 50mA, 500mA

1µA (ICBO)

100 @ 50mA, 2V

900 mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

3-MP

MMBTA42-AU_R1_000A1

Panjit International Inc.

TRANS NPN 300V 0.5A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 250 mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

pacchetto: -

Azione8.700

500 mA

300 V

500mV @ 2mA, 20mA

100nA (ICBO)

40 @ 30mA, 10V

250 mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23