Pagina 45 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Singoli

Record 20.307
Pagina  45/726
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot KSE3055TTU
Fairchild/ON Semiconductor

TRANS NPN 60V 10A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
  • Power - Max: 600mW
  • Frequency - Transition: 2MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
pacchetto: TO-220-3
Azione26.388
10A
60V
8V @ 3.3A, 10A
700µA
20 @ 4A, 4V
600mW
2MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
KSA1182OMTF
Fairchild/ON Semiconductor

TRANS PNP 30V 0.5A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
  • Power - Max: 150mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.304
500mA
30V
250mV @ 10mA, 100mA
100nA (ICBO)
70 @ 100mA, 1V
150mW
200MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MJE5851
ON Semiconductor

TRANS PNP 350V 8A TO220AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
  • Power - Max: 80W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione6.032
8A
350V
5V @ 3A, 8A
-
5 @ 5A, 5V
80W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
JAN2N3501L
Microsemi Corporation

TRANS NPN 150V 0.3A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
pacchetto: TO-205AA, TO-5-3 Metal Can
Azione4.672
300mA
150V
400mV @ 15mA, 150mA
10µA (ICBO)
100 @ 150mA, 10V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
hot TIP32C
Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-BIPOLAR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
  • Power - Max: 40W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
pacchetto: TO-220-3
Azione1.349.856
3A
100V
1.2V @ 375mA, 3A
300µA
25 @ 1A, 4V
40W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
BC55PASX
Nexperia USA Inc.

IC TRANS NPN 1A 60 SOT1061

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 420mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: DFN2020D-3
pacchetto: 3-SMD, No Lead
Azione5.280
1A
60V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
420mW
180MHz
150°C (TJ)
Surface Mount
3-SMD, No Lead
DFN2020D-3
PBSS4041PX,115
Nexperia USA Inc.

TRANS PNP 60V 5A SOT89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
  • Power - Max: 2.5W
  • Frequency - Transition: 110MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
pacchetto: TO-243AA
Azione5.056
5A
60V
300mV @ 500mA, 5A
100nA
150 @ 2A, 2V
2.5W
110MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
BF824,235
Nexperia USA Inc.

TRANS PNP 30V 0.025A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 25mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 450MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.040
25mA
30V
-
50nA (ICBO)
25 @ 4mA, 10V
250mW
450MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
TIP31C-BP
Micro Commercial Co

TRANS NPN 100V 3A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 2W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione22.800
3A
100V
1.2V @ 375mA, 3A
300µA
10 @ 3A, 4V
2W
3MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
2SD145000A
Panasonic Electronic Components

TRANS NPN 20V 0.5A NS-B1

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 300mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
pacchetto: NS-B1
Azione48.888
500mA
20V
400mV @ 20mA, 500mA
100nA (ICBO)
200 @ 500mA, 2V
300mW
200MHz
150°C (TJ)
Through Hole
NS-B1
NS-B1
hot BD136G
ON Semiconductor

TRANS PNP 45V 1.5A TO225AA

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
pacchetto: TO-225AA, TO-126-3
Azione250.632
1.5A
45V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1.25W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-225AA
2SC3265-Y,LF
Toshiba Semiconductor and Storage

TRANS NPN 25V 0.8A S-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione28.506
800mA
25V
400mV @ 20mA, 500mA
100nA (ICBO)
160 @ 100mA, 1V
200mW
120MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236
KST43MTF
Fairchild/ON Semiconductor

TRANS NPN 200V 0.5A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
  • Power - Max: 350mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione27.036
500mA
200V
500mV @ 2mA, 20mA
100nA (ICBO)
40 @ 30mA, 10V
350mW
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
JANS2N2221UA
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: -
  • Frequency - Transition: 250MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
pacchetto: -
Request a Quote
-
30 V
-
-
100 @ 150mA, 10V
-
250MHz
-
Surface Mount
4-SMD, No Lead
UA
2SA1246T-AA
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
CMPT3904G-TR-PBFREE
Central Semiconductor Corp

TRANS NPN 40V 0.2A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 350 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: -
Azione1.050.345
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
350 mW
300MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MJD31C-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 1.25 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
pacchetto: -
Request a Quote
3 A
100 V
1.2V @ 375mA, 3A
20µA
10 @ 3A, 4V
1.25 W
3MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
2SA1083-E-AP
Micro Commercial Co

TRANS PNP 60V 0.1A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 12V
  • Power - Max: 400 mW
  • Frequency - Transition: 90MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
pacchetto: -
Request a Quote
100 mA
60 V
200mV @ 1mA, 10mA
100nA (ICBO)
400 @ 2mA, 12V
400 mW
90MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92
BD882-R-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacchetto: -
Request a Quote
3 A
30 V
500mV @ 200mA, 2A
10µA
60 @ 1A, 2V
500 mW
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89
JAN2N3867U4
Microchip Technology

TRANS PNP 40V 3A U4

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U4
pacchetto: -
Request a Quote
3 A
40 V
1.5V @ 250mA, 2.5A
100µA (ICBO)
40 @ 1.5A, 2V
1 W
-
200°C (TJ)
Surface Mount
3-SMD, No Lead
U4
2N4225
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 5 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
pacchetto: -
Request a Quote
3 A
40 V
-
-
-
5 W
-
-
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
2N5624
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 116 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AD (TO-3)
pacchetto: -
Request a Quote
10 A
80 V
-
-
-
116 W
-
-
Through Hole
TO-204AA, TO-3
TO-204AD (TO-3)
MMBT3904-EVL
Venkel

Transistor,SOT-23,40V,200mA,NPN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 225 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: -
pacchetto: -
Request a Quote
200 mA
40 V
300mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
225 mW
300MHz
-50°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
-
2SA1973-5-TB-E-ON
onsemi

PNP EPITAXIAL PLANAR SILICON

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SAR513RHZGTL
Rohm Semiconductor

PNP, SOT-346T, -50V -1A, MIDDLE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 400MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: TSMT3
pacchetto: -
Azione4.140
1 A
50 V
400mV @ 25mA, 500mA
1µA (ICBO)
180 @ 50mA, 2V
500 mW
400MHz
150°C (TJ)
Surface Mount
SC-96
TSMT3
2SCR572D3TL1
Rohm Semiconductor

TRANS NPN 30V 5A TO252

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V
  • Power - Max: 10 W
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
pacchetto: -
Azione43.182
5 A
30 V
400mV @ 100mA, 2A
1µA (ICBO)
200 @ 500mA, 3V
10 W
300MHz
150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
FJP5555STU
Fairchild Semiconductor

POWER BIPOLAR TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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DXTP03100CFG-7
Diodes Incorporated

PWR MID PERF TRANSISTOR POWERDI3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 380mV @ 400mA, 4A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V
  • Power - Max: 1.07 W
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
pacchetto: -
Azione5.940
5 A
100 V
380mV @ 400mA, 4A
50nA
250 @ 10mA, 2V
1.07 W
125MHz
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerVDFN
PowerDI3333-8 (SWP) Type UX