Pagina 411 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BCP55H6327XTSA1	Infineon Technologies	TRANS NPN 60V 1A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	pacchetto: TO-261-4, TO-261AA	Azione2.784	1A	60V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	2W	100MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
TIP34C	Central Semiconductor Corp	TRANS GENERAL PURPOSE TO-218 Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V Power - Max: 80W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: TO-218	pacchetto: TO-218-3	Azione91.524	10A	100V	-	-	100 @ 3A, 4V	80W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-218-3	TO-218
KSC2331OTA	Fairchild/ON Semiconductor	TRANS NPN 60V 0.7A TO-92L Transistor Type: NPN Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V Power - Max: 1W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 Long Body (Formed Leads)	Azione3.664	700mA	60V	700mV @ 50mA, 500mA	100nA (ICBO)	70 @ 50mA, 2V	1W	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-92-3
KSC1675CRBU	Fairchild/ON Semiconductor	TRANS NPN 30V 0.05A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Power - Max: 250mW Frequency - Transition: 300MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione6.304	50mA	30V	300mV @ 1mA, 10mA	100nA (ICBO)	40 @ 1mA, 6V	250mW	300MHz	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSP8098CTA	Fairchild/ON Semiconductor	TRANS NPN 60V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Power - Max: 625mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione6.304	500mA	60V	300mV @ 10mA, 100mA	100nA	100 @ 1mA, 5V	625mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
SS9014DTA	Fairchild/ON Semiconductor	TRANS NPN 45V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V Power - Max: 450mW Frequency - Transition: 270MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione2.352	100mA	45V	300mV @ 5mA, 100mA	50nA (ICBO)	400 @ 1mA, 5V	450mW	270MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC558BTF	Fairchild/ON Semiconductor	TRANS PNP 30V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione7.712	100mA	30V	650mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	500mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MJB41C	ON Semiconductor	TRANS NPN 100V 6A D2PAK Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Power - Max: 2W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione15.228	6A	100V	1.5V @ 600mA, 6A	700µA	15 @ 3A, 4V	2W	3MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
2SB1237TV2P	Rohm Semiconductor	TRANS PNP 32V 1A ATV Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: ATV	pacchetto: 3-SIP	Azione180.000	1A	32V	500mV @ 50mA, 500mA	500nA (ICBO)	82 @ 100mA, 3V	1W	150MHz	150°C (TJ)	Through Hole	3-SIP	ATV
2SC3311ASA	Panasonic Electronic Components	TRANS NPN 50V 0.1A NS-B1 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V Power - Max: 300mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	pacchetto: NS-B1	Azione52.668	100mA	50V	300mV @ 10mA, 100mA	1µA	290 @ 2mA, 10V	300mW	150MHz	150°C (TJ)	Through Hole	NS-B1	NS-B1
JANTXV2N930	Microsemi Corporation	TRANS NPN 45V 0.03A TO18 Transistor Type: NPN Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Power - Max: 300mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	pacchetto: TO-206AA, TO-18-3 Metal Can	Azione6.128	30mA	45V	1V @ 500µA, 10mA	2nA	100 @ 10µA, 5V	300mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
FZT749TC	Diodes Incorporated	TRANS PNP 25V 3A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Power - Max: 2W Frequency - Transition: 160MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: TO-261-4, TO-261AA	Azione78.732	3A	25V	600mV @ 300mA, 3A	100nA (ICBO)	100 @ 1A, 2V	2W	160MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2SC4134T-TL-E	ON Semiconductor	TRANS NPN 100V 1A TP-FA Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione4.304	1A	100V	400mV @ 40mA, 400mA	100nA (ICBO)	200 @ 100mA, 5V	800mW	120MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	2-TP-FA
BC846BM,315	Nexperia USA Inc.	TRANS NPN 65V 0.1A 3DFN Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: 3-DFN1006B (0.6x1)	pacchetto: 3-XFDFN	Azione4.272	100mA	65V	200mV @ 500µA, 10mA	15nA (ICBO)	200 @ 2mA, 5V	250mW	100MHz	150°C (TJ)	Surface Mount	3-XFDFN	3-DFN1006B (0.6x1)
KSP94BU	Fairchild/ON Semiconductor	TRANS PNP 400V 0.3A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Power - Max: 625mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione3.872	300mA	400V	750mV @ 5mA, 50mA	1µA	50 @ 10mA, 10V	625mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2SC4117-BL,LF	Toshiba Semiconductor and Storage	TRANS NPN 120V 0.1A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	pacchetto: SC-70, SOT-323	Azione622.956	100mA	120V	300mV @ 1mA, 10mA	100nA (ICBO)	200 @ 2mA, 6V	100mW	100MHz	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
MMBT5089LT1G	ON Semiconductor	TRANS NPN 25V 0.05A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V Power - Max: 300mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione813.420	50mA	25V	500mV @ 1mA, 10mA	50nA (ICBO)	400 @ 100µA, 5V	300mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
JANSL2N3440UA	Microchip Technology	TRANS NPN 250V 1A UA Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	pacchetto: -	Request a Quote	1 A	250 V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
JANSM2N2369AU	Microchip Technology	RH DUAL - SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 15 V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: U	pacchetto: -	Request a Quote	-	15 V	450mV @ 10mA, 100mA	400nA	40 @ 10mA, 1V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	6-SMD, No Lead	U
2SB1455R	onsemi	BIP PNP 7A 80V Transistor Type: PNP Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 4A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Power - Max: 2 W Frequency - Transition: 20MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220ML	pacchetto: -	Request a Quote	7 A	80 V	500mV @ 400mA, 4A	100µA (ICBO)	100 @ 1A, 2V	2 W	20MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220ML
CXT2907A-TR-PBFREE	Central Semiconductor Corp	TRANS PNP 60V 0.6A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1.2 W Frequency - Transition: 200MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	pacchetto: -	Azione16.833	600 mA	60 V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	1.2 W	200MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
MMBT4401W_R1_00001	Panjit International Inc.	TRANS NPN 40V 0.6A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Power - Max: 225 mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	pacchetto: -	Azione8.967	600 mA	40 V	750mV @ 50mA, 500mA	100nA	100 @ 150mA, 1V	225 mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
CP788X-BC556B-CT	Central Semiconductor Corp	TRANS PNP DIE Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	Surface Mount	Die	Die
JANSF2N2221A	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	pacchetto: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
NTE375	NTE Electronics, Inc	TRANS NPN 150V 2A TO220 Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100mA, 1A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Power - Max: 1.75 W Frequency - Transition: 8MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	pacchetto: -	Request a Quote	2 A	150 V	1.5V @ 100mA, 1A	1mA (ICBO)	100 @ 500mA, 2V	1.75 W	8MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220
2N1131A-PBFREE	Central Semiconductor Corp	TRANS PNP 40V TO39 Transistor Type: PNP Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V Power - Max: - Frequency - Transition: 90MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	pacchetto: -	Request a Quote	-	40 V	-	500nA (ICBO)	20 @ 150mA, 10V	-	90MHz	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
JANS2N3439UA-TR	Microchip Technology	TRANS NPN 350V 1A UA Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	pacchetto: -	Request a Quote	1 A	350 V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
2PD601ARW-QX	Nexperia USA Inc.	2PD601ARW-Q/SOT323/SC-70 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	pacchetto: -	Request a Quote	100 mA	50 V	250mV @ 10mA, 100mA	10nA (ICBO)	210 @ 2mA, 10V	200 mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323

BCP55H6327XTSA1

Infineon Technologies

TRANS NPN 60V 1A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

pacchetto: TO-261-4, TO-261AA

Azione2.784

1A

60V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

2W

100MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

TIP34C

Central Semiconductor Corp

TRANS GENERAL PURPOSE TO-218

Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Power - Max: 80W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: TO-218

pacchetto: TO-218-3

Azione91.524

10A

100V

-

100 @ 3A, 4V

80W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-218-3

TO-218

KSC2331OTA

Fairchild/ON Semiconductor

TRANS NPN 60V 0.7A TO-92L

Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 Long Body (Formed Leads)

Azione3.664

700mA

60V

700mV @ 50mA, 500mA

100nA (ICBO)

70 @ 50mA, 2V

1W

50MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

TO-92-3

KSC1675CRBU

Fairchild/ON Semiconductor

TRANS NPN 30V 0.05A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione6.304

50mA

30V

300mV @ 1mA, 10mA

100nA (ICBO)

40 @ 1mA, 6V

250mW

300MHz

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSP8098CTA

Fairchild/ON Semiconductor

TRANS NPN 60V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Power - Max: 625mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione6.304

500mA

60V

300mV @ 10mA, 100mA

100nA

100 @ 1mA, 5V

625mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

SS9014DTA

Fairchild/ON Semiconductor

TRANS NPN 45V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V
Power - Max: 450mW
Frequency - Transition: 270MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione2.352

100mA

45V

300mV @ 5mA, 100mA

50nA (ICBO)

400 @ 1mA, 5V

450mW

270MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC558BTF

Fairchild/ON Semiconductor

TRANS PNP 30V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione7.712

100mA

30V

650mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

500mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MJB41C

ON Semiconductor

TRANS NPN 100V 6A D2PAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione15.228

6A

100V

1.5V @ 600mA, 6A

700µA

15 @ 3A, 4V

2W

3MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

2SB1237TV2P

Rohm Semiconductor

TRANS PNP 32V 1A ATV

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: ATV

pacchetto: 3-SIP

Azione180.000

1A

32V

500mV @ 50mA, 500mA

500nA (ICBO)

82 @ 100mA, 3V

1W

150MHz

150°C (TJ)

Through Hole

3-SIP

ATV

2SC3311ASA

Panasonic Electronic Components

TRANS NPN 50V 0.1A NS-B1

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
Power - Max: 300mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

pacchetto: NS-B1

Azione52.668

100mA

50V

300mV @ 10mA, 100mA

1µA

290 @ 2mA, 10V

300mW

150MHz

150°C (TJ)

Through Hole

NS-B1

JANTXV2N930

Microsemi Corporation

TRANS NPN 45V 0.03A TO18

Transistor Type: NPN
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Power - Max: 300mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

pacchetto: TO-206AA, TO-18-3 Metal Can

Azione6.128

30mA

45V

1V @ 500µA, 10mA

2nA

100 @ 10µA, 5V

300mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

FZT749TC

Diodes Incorporated

TRANS PNP 25V 3A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Power - Max: 2W
Frequency - Transition: 160MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

Azione78.732

3A

25V

600mV @ 300mA, 3A

100nA (ICBO)

100 @ 1A, 2V

2W

160MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2SC4134T-TL-E

ON Semiconductor

TRANS NPN 100V 1A TP-FA

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione4.304

1A

100V

400mV @ 40mA, 400mA

100nA (ICBO)

200 @ 100mA, 5V

800mW

120MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

2-TP-FA

BC846BM,315

Nexperia USA Inc.

TRANS NPN 65V 0.1A 3DFN

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: 3-DFN1006B (0.6x1)

pacchetto: 3-XFDFN

Azione4.272

100mA

65V

200mV @ 500µA, 10mA

15nA (ICBO)

200 @ 2mA, 5V

250mW

100MHz

150°C (TJ)

Surface Mount

3-XFDFN

3-DFN1006B (0.6x1)

KSP94BU

Fairchild/ON Semiconductor

TRANS PNP 400V 0.3A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione3.872

300mA

400V

750mV @ 5mA, 50mA

1µA

50 @ 10mA, 10V

625mW

-

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2SC4117-BL,LF

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

pacchetto: SC-70, SOT-323

Azione622.956

100mA

120V

300mV @ 1mA, 10mA

100nA (ICBO)

200 @ 2mA, 6V

100mW

100MHz

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

MMBT5089LT1G

ON Semiconductor

TRANS NPN 25V 0.05A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Power - Max: 300mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione813.420

50mA

25V

500mV @ 1mA, 10mA

50nA (ICBO)

400 @ 100µA, 5V

300mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

JANSL2N3440UA

Microchip Technology

TRANS NPN 250V 1A UA

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

pacchetto: -

Request a Quote

1 A

250 V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

JANSM2N2369AU

Microchip Technology

RH DUAL - SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 15 V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: U

pacchetto: -

Request a Quote

-

15 V

450mV @ 10mA, 100mA

400nA

40 @ 10mA, 1V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

6-SMD, No Lead

U

2SB1455R

onsemi

BIP PNP 7A 80V

Transistor Type: PNP
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Power - Max: 2 W
Frequency - Transition: 20MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220ML

pacchetto: -

Request a Quote

7 A

80 V

500mV @ 400mA, 4A

100µA (ICBO)

100 @ 1A, 2V

2 W

20MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220ML

CXT2907A-TR-PBFREE

Central Semiconductor Corp

TRANS PNP 60V 0.6A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.2 W
Frequency - Transition: 200MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

pacchetto: -

Azione16.833

600 mA

60 V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

1.2 W

200MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

MMBT4401W_R1_00001

Panjit International Inc.

TRANS NPN 40V 0.6A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Power - Max: 225 mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

pacchetto: -

Azione8.967

600 mA

40 V

750mV @ 50mA, 500mA

100nA

100 @ 150mA, 1V

225 mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

CP788X-BC556B-CT

Central Semiconductor Corp

TRANS PNP DIE

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

pacchetto: -

Request a Quote

-

Surface Mount

Die

JANSF2N2221A

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

pacchetto: -

Request a Quote

800 mA

50 V

1V @ 50mA, 500mA

50nA

40 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

NTE375

NTE Electronics, Inc

TRANS NPN 150V 2A TO220

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 1.75 W
Frequency - Transition: 8MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

pacchetto: -

Request a Quote

2 A

150 V

1.5V @ 100mA, 1A

1mA (ICBO)

100 @ 500mA, 2V

1.75 W

8MHz

150°C (TJ)

Through Hole

TO-220-3

TO-220

2N1131A-PBFREE

Central Semiconductor Corp

TRANS PNP 40V TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
Power - Max: -
Frequency - Transition: 90MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

pacchetto: -

Request a Quote

-

40 V

-

500nA (ICBO)

20 @ 150mA, 10V

-

90MHz

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

JANS2N3439UA-TR

Microchip Technology

TRANS NPN 350V 1A UA

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

pacchetto: -

Request a Quote

1 A

350 V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

2PD601ARW-QX

Nexperia USA Inc.

2PD601ARW-Q/SOT323/SC-70

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 200 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

pacchetto: -

Request a Quote

100 mA

50 V

250mV @ 10mA, 100mA

10nA (ICBO)

210 @ 2mA, 10V

200 mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323