Pagina 389 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFN39H6327XTSA1	Infineon Technologies	TRANS PNP 300V 0.2A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V Power - Max: 1.5W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	pacchetto: TO-261-4, TO-261AA	Azione6.736	200mA	300V	500mV @ 2mA, 20mA	100nA (ICBO)	30 @ 30mA, 10V	1.5W	100MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
2SC4682,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 15V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V Power - Max: 900mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacchetto: TO-226-3, TO-92-3 Long Body	Azione7.728	3A	15V	500mV @ 30mA, 3A	1µA (ICBO)	800 @ 500mA, 1V	900mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y(T6ND2,AF	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacchetto: TO-226-3, TO-92-3 Long Body	Azione5.712	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
CP547-CEN1103-WS	Central Semiconductor Corp	TRANS PNP DARLINGTON DIE Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione6.240	-	-	-	-	-	-	-	-	-	-	-
2SD1207S-AE	ON Semiconductor	TRANS NPN 50V 2A 3MP Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: 3-MP	pacchetto: TO-226-3, TO-92-3 Long Body (Formed Leads)	Azione120.000	2A	50V	400mV @ 50mA, 1A	100nA (ICBO)	100 @ 100mA, 2V	1W	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	3-MP
MPSA93RLRM	ON Semiconductor	TRANS PNP 200V 0.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Power - Max: 625mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione5.360	500mA	200V	400mV @ 2mA, 20mA	250nA (ICBO)	25 @ 30mA, 10V	625mW	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSD401YTU	Fairchild/ON Semiconductor	TRANS NPN 150V 2A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 400mA, 10V Power - Max: 25W Frequency - Transition: 5MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	pacchetto: TO-220-3	Azione2.960	2A	150V	1V @ 50mA, 500mA	50µA (ICBO)	120 @ 400mA, 10V	25W	5MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
MJE5852	STMicroelectronics	TRANS PNP 400V 8A TO-220 Transistor Type: PNP Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V Power - Max: 80W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	pacchetto: TO-220-3	Azione7.152	8A	400V	5V @ 3A, 8A	500µA	5 @ 5A, 5V	80W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
TSB772CK C0G	TSC America Inc.	TRANSISTOR, PNP, -30V, -3A, 100A Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Power - Max: 10W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	pacchetto: TO-225AA, TO-126-3	Azione2.416	3A	30V	500mV @ 200mA, 2A	1µA	100 @ 1A, 2V	10W	80MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
TIP29C	Fairchild/ON Semiconductor	TRANS NPN 100V 1A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Power - Max: 2W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	pacchetto: TO-220-3	Azione219.696	1A	100V	700mV @ 125mA, 1A	300µA	15 @ 1A, 4V	2W	3MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
2SD1766T100P	Rohm Semiconductor	TRANS NPN 32V 2A SOT-89 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	pacchetto: TO-243AA	Azione3.312	2A	32V	800mV @ 200mA, 2A	1µA (ICBO)	82 @ 500mA, 3V	2W	100MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
CPH3106-TL-E	ON Semiconductor	TRANS PNP 12V 3A CPH3 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 165mV @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 280MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Supplier Device Package: 3-CPH	pacchetto: SC-96	Azione72.000	3A	12V	165mV @ 30mA, 1.5A	100nA (ICBO)	200 @ 500mA, 2V	900mW	280MHz	150°C (TJ)	Surface Mount	SC-96	3-CPH
CMST2222A BK	Central Semiconductor Corp	TRANS NPN 40V 0.6A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 275mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	pacchetto: SC-70, SOT-323	Azione3.456	600mA	40V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	275mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
2SB1122T-TD-E	ON Semiconductor	TRANS PNP 50V 1A SOT89-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	pacchetto: TO-243AA	Azione626.316	1A	50V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 100mA, 2V	500mW	150MHz	150°C (TJ)	Surface Mount	TO-243AA	PCP
2SCR372P5T100Q	Rohm Semiconductor	NPN 120V 700MA MEDIUM POWER DRIV Transistor Type: NPN Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 220MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	pacchetto: TO-243AA	Azione2.384	700mA	120V	300mV @ 50mA, 500mA	1µA (ICBO)	120 @ 100mA, 5V	500mW	220MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
JANTX2N6287	Aeroflex Metelics, Division of MACOM	DIODE Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 20A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Power - Max: 175W Frequency - Transition: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	pacchetto: TO-204AA, TO-3	Azione4.112	20A	100V	3V @ 200mA, 20A	1mA	1000 @ 6A, 3V	175W	-	-65°C ~ 175°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
MD2001FX	STMicroelectronics	TRANS NPN 700V 12A ISOWATT218FX Transistor Type: NPN Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 700V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1.5A, 6A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 4.5 @ 6A, 5V Power - Max: 58W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOWATT218FX Supplier Device Package: ISOWATT-218FX	pacchetto: ISOWATT218FX	Azione5.104	12A	700V	1.8V @ 1.5A, 6A	200µA	4.5 @ 6A, 5V	58W	-	150°C (TJ)	Through Hole	ISOWATT218FX	ISOWATT-218FX
2SA1576U3T106Q	Rohm Semiconductor	TRANS PNP 50V 0.15A UMT3 Transistor Type: PNP Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 200 mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	pacchetto: -	Azione27.408	150 mA	50 V	500mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	200 mW	140MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	UMT3
TIP41B-BP	Micro Commercial Co	TRANS NPN 80V 6A TO220AB Transistor Type: NPN Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V Power - Max: 2 W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	pacchetto: -	Request a Quote	6 A	80 V	1.5V @ 600mA, 6A	700µA	30 @ 300mA, 4V	2 W	3MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
PBHV8110DW-AU_R2_000A1	Panjit International Inc.	TRANS NPN 100V 1A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V Power - Max: 2.6 W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: -	Azione7.200	1 A	100 V	450mV @ 100mA, 1A	500nA (ICBO)	140 @ 150mA, 2V	2.6 W	100MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
JAN2N333AT2	Microchip Technology	TRANS NPN 45V 0.01A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 10 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	pacchetto: -	Request a Quote	10 mA	45 V	-	-	-	-	-	175°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
ZTN23015CFHQTA	Diodes Incorporated	PWR LOW SAT TRANSISTOR SOT23 T&R Transistor Type: NPN Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 15 V Vce Saturation (Max) @ Ib, Ic: 180mV @ 120mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 730 mW Frequency - Transition: 235MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (Type DN)	pacchetto: -	Request a Quote	6 A	15 V	180mV @ 120mA, 6A	100nA	200 @ 500mA, 2V	730 mW	235MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (Type DN)
2N3790	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 150 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	pacchetto: -	Request a Quote	10 A	80 V	-	-	-	150 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
2N4905	Microchip Technology	NPN SILICON TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N5252	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	pacchetto: -	Request a Quote	1 A	300 V	-	-	-	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
JANKCBR2N3440	Microchip Technology	TRANS NPN 250V 1A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	pacchetto: -	Request a Quote	1 A	250 V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800 mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTX2N2432AUB-TR	Microchip Technology	TRANS NPN 30V 0.1A UB Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	pacchetto: -	Request a Quote	100 mA	30 V	-	-	-	-	-	200°C (TJ)	Surface Mount	4-SMD, No Lead	UB
BCP52-10-TP	Micro Commercial Co	TRANS PNP 60V 1A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 1.5 W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: -	Request a Quote	1 A	60 V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	1.5 W	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223

BFN39H6327XTSA1

Infineon Technologies

TRANS PNP 300V 0.2A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Power - Max: 1.5W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

pacchetto: TO-261-4, TO-261AA

Azione6.736

200mA

300V

500mV @ 2mA, 20mA

100nA (ICBO)

30 @ 30mA, 10V

1.5W

100MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

2SC4682,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 3A 15V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Power - Max: 900mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

Azione7.728

3A

15V

500mV @ 30mA, 3A

1µA (ICBO)

800 @ 500mA, 1V

900mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC2655-Y(T6ND2,AF

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

Azione5.712

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

CP547-CEN1103-WS

Central Semiconductor Corp

TRANS PNP DARLINGTON DIE

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione6.240

-

2SD1207S-AE

ON Semiconductor

TRANS NPN 50V 2A 3MP

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: 3-MP

pacchetto: TO-226-3, TO-92-3 Long Body (Formed Leads)

Azione120.000

2A

50V

400mV @ 50mA, 1A

100nA (ICBO)

100 @ 100mA, 2V

1W

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

3-MP

MPSA93RLRM

ON Semiconductor

TRANS PNP 200V 0.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione5.360

500mA

200V

400mV @ 2mA, 20mA

250nA (ICBO)

25 @ 30mA, 10V

625mW

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSD401YTU

Fairchild/ON Semiconductor

TRANS NPN 150V 2A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 400mA, 10V
Power - Max: 25W
Frequency - Transition: 5MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

pacchetto: TO-220-3

Azione2.960

2A

150V

1V @ 50mA, 500mA

50µA (ICBO)

120 @ 400mA, 10V

25W

5MHz

150°C (TJ)

Through Hole

TO-220-3

MJE5852

STMicroelectronics

TRANS PNP 400V 8A TO-220

Transistor Type: PNP
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Power - Max: 80W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

pacchetto: TO-220-3

Azione7.152

8A

400V

5V @ 3A, 8A

500µA

5 @ 5A, 5V

80W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

TSB772CK C0G

TSC America Inc.

TRANSISTOR, PNP, -30V, -3A, 100A

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Power - Max: 10W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

pacchetto: TO-225AA, TO-126-3

Azione2.416

3A

30V

500mV @ 200mA, 2A

1µA

100 @ 1A, 2V

10W

80MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

TIP29C

Fairchild/ON Semiconductor

TRANS NPN 100V 1A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

pacchetto: TO-220-3

Azione219.696

1A

100V

700mV @ 125mA, 1A

300µA

15 @ 1A, 4V

2W

3MHz

150°C (TJ)

Through Hole

TO-220-3

2SD1766T100P

Rohm Semiconductor

TRANS NPN 32V 2A SOT-89

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

pacchetto: TO-243AA

Azione3.312

2A

32V

800mV @ 200mA, 2A

1µA (ICBO)

82 @ 500mA, 3V

2W

100MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

CPH3106-TL-E

ON Semiconductor

TRANS PNP 12V 3A CPH3

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 165mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 280MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: 3-CPH

pacchetto: SC-96

Azione72.000

3A

12V

165mV @ 30mA, 1.5A

100nA (ICBO)

200 @ 500mA, 2V

900mW

280MHz

150°C (TJ)

Surface Mount

SC-96

3-CPH

CMST2222A BK

Central Semiconductor Corp

TRANS NPN 40V 0.6A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 275mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

pacchetto: SC-70, SOT-323

Azione3.456

600mA

40V

1V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

275mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

2SB1122T-TD-E

ON Semiconductor

TRANS PNP 50V 1A SOT89-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

pacchetto: TO-243AA

Azione626.316

1A

50V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 100mA, 2V

500mW

150MHz

150°C (TJ)

Surface Mount

TO-243AA

PCP

2SCR372P5T100Q

Rohm Semiconductor

NPN 120V 700MA MEDIUM POWER DRIV

Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Power - Max: 500mW
Frequency - Transition: 220MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

pacchetto: TO-243AA

Azione2.384

700mA

120V

300mV @ 50mA, 500mA

1µA (ICBO)

120 @ 100mA, 5V

500mW

220MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

JANTX2N6287

Aeroflex Metelics, Division of MACOM

DIODE

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Power - Max: 175W
Frequency - Transition: -
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

pacchetto: TO-204AA, TO-3

Azione4.112

20A

100V

3V @ 200mA, 20A

1mA

1000 @ 6A, 3V

175W

-

-65°C ~ 175°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

MD2001FX

STMicroelectronics

TRANS NPN 700V 12A ISOWATT218FX

Transistor Type: NPN
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 700V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1.5A, 6A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4.5 @ 6A, 5V
Power - Max: 58W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOWATT218FX
Supplier Device Package: ISOWATT-218FX

pacchetto: ISOWATT218FX

Azione5.104

12A

700V

1.8V @ 1.5A, 6A

200µA

4.5 @ 6A, 5V

58W

-

150°C (TJ)

Through Hole

ISOWATT218FX

ISOWATT-218FX

2SA1576U3T106Q

Rohm Semiconductor

TRANS PNP 50V 0.15A UMT3

Transistor Type: PNP
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 200 mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

pacchetto: -

Azione27.408

150 mA

50 V

500mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

200 mW

140MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

UMT3

TIP41B-BP

Micro Commercial Co

TRANS NPN 80V 6A TO220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Power - Max: 2 W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

pacchetto: -

Request a Quote

6 A

80 V

1.5V @ 600mA, 6A

700µA

30 @ 300mA, 4V

2 W

3MHz

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

PBHV8110DW-AU_R2_000A1

Panjit International Inc.

TRANS NPN 100V 1A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Power - Max: 2.6 W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: -

Azione7.200

1 A

100 V

450mV @ 100mA, 1A

500nA (ICBO)

140 @ 150mA, 2V

2.6 W

100MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

JAN2N333AT2

Microchip Technology

TRANS NPN 45V 0.01A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

pacchetto: -

Request a Quote

10 mA

45 V

-

175°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

ZTN23015CFHQTA

Diodes Incorporated

PWR LOW SAT TRANSISTOR SOT23 T&R

Transistor Type: NPN
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 120mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 730 mW
Frequency - Transition: 235MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (Type DN)

pacchetto: -

Request a Quote

6 A

15 V

180mV @ 120mA, 6A

100nA

200 @ 500mA, 2V

730 mW

235MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23 (Type DN)

2N3790

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 150 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

pacchetto: -

Request a Quote

10 A

80 V

-

150 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

2N4905

Microchip Technology

NPN SILICON TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

2N5252

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

pacchetto: -

Request a Quote

1 A

300 V

-

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

JANKCBR2N3440

Microchip Technology

TRANS NPN 250V 1A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

pacchetto: -

Request a Quote

1 A

250 V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800 mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANTX2N2432AUB-TR

Microchip Technology

TRANS NPN 30V 0.1A UB

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

pacchetto: -

Request a Quote

100 mA

30 V

-

200°C (TJ)

Surface Mount

4-SMD, No Lead

UB

BCP52-10-TP

Micro Commercial Co

TRANS PNP 60V 1A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1.5 W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: -

Request a Quote

1 A

60 V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

1.5 W

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223