Pagina 254 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC2655-Y,T6SWFF(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacchetto: TO-226-3, TO-92-3 Long Body	Azione3.360	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
JANTX2N7370	Microsemi Corporation	TRANS NPN DARL 100V 12A TO254 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Power - Max: 100W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Supplier Device Package: TO-254AA	pacchetto: TO-254-3, TO-254AA (Straight Leads)	Azione7.856	12A	100V	3V @ 120mA, 12A	1mA	1000 @ 6A, 3V	100W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-254-3, TO-254AA (Straight Leads)	TO-254AA
2STN2340	STMicroelectronics	TRANS PNP 40V 3A SOT-223 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Power - Max: 1.6W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: TO-261-4, TO-261AA	Azione6.480	3A	40V	350mV @ 150mA, 3A	100nA (ICBO)	180 @ 1A, 2V	1.6W	100MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2SB0766GRL	Panasonic Electronic Components	TRANS PNP 50V 1A MINI-PWR Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V Power - Max: 1W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MiniP3-F2	pacchetto: TO-243AA	Azione4.560	1A	50V	400mV @ 50mA, 500mA	100nA (ICBO)	120 @ 500mA, 10V	1W	200MHz	150°C (TJ)	Surface Mount	TO-243AA	MiniP3-F2
NSCT2907ALT1G	ON Semiconductor	TRANS PNP 60V 0.6A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 225mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione4.640	600mA	60V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	225mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
KSC388YBU	Fairchild/ON Semiconductor	TRANS NPN 25V 0.05A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1.5mA, 15mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 12.5mA, 12.5V Power - Max: 300mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione7.616	50mA	25V	200mV @ 1.5mA, 15mA	100nA (ICBO)	20 @ 12.5mA, 12.5V	300mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
MJ4035	STMicroelectronics	TRANS NPN DARL 100V 16A TO-3 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 16A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 16A Current - Collector Cutoff (Max): 3mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 10A, 3V Power - Max: 150W Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	pacchetto: TO-204AA, TO-3	Azione7.032	16A	100V	4V @ 80mA, 16A	3mA	1000 @ 10A, 3V	150W	-	200°C (TJ)	Chassis Mount	TO-204AA, TO-3	TO-3
BC182LB_D75Z	Fairchild/ON Semiconductor	TRANS NPN 50V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V Power - Max: 350mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione3.472	100mA	50V	600mV @ 5mA, 100mA	15nA (ICBO)	40 @ 10µA, 5V	350mW	150MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SB12990P	Panasonic Electronic Components	TRANS PNP 60V 3A TO-220F Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 4V Power - Max: 2W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-A1	pacchetto: TO-220-3 Full Pack	Azione3.056	3A	60V	1V @ 50mA, 2A	100µA	400 @ 500mA, 4V	2W	30MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-A1
MPS2924	Fairchild/ON Semiconductor	TRANS NPN 25V 0.1A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 10V Power - Max: 625mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione3.136	100mA	25V	-	500nA (ICBO)	150 @ 2mA, 10V	625mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2SB14350RA	Panasonic Electronic Components	TRANS PNP 50V 2A MT-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 2V Power - Max: 1.5W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: MT-3-A1	pacchetto: 3-SIP	Azione14.700	2A	50V	300mV @ 50mA, 1A	100nA (ICBO)	120 @ 200mA, 2V	1.5W	80MHz	150°C (TJ)	Through Hole	3-SIP	MT-3-A1
MJD112-TP	Micro Commercial Co	TRANS NPN 100V 2A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Power - Max: 1W Frequency - Transition: 25MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione26.214	2A	100V	3V @ 40mA, 4A	20nA	1000 @ 2A, 3V	1W	25MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
BCV47,215	Nexperia USA Inc.	TRANS NPN DARL 60V 0.5A SOT23 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 250mW Frequency - Transition: 220MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione33.600	500mA	60V	1V @ 100µA, 100mA	100nA (ICBO)	10000 @ 100mA, 5V	250mW	220MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BCW66KHE6327HTSA1	Infineon Technologies	TRANS NPN 45V 0.8A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 500mW Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione274.314	800mA	45V	450mV @ 50mA, 500mA	20nA (ICBO)	250 @ 100mA, 1V	500mW	170MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
MJD32CTF	Fairchild/ON Semiconductor	TRANS PNP 100V 3A DPAK Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Power - Max: 1.56W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione175.296	3A	100V	1.2V @ 375mA, 3A	50µA	10 @ 3A, 4V	1.56W	3MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
MMBT3906LP-7B	Diodes Incorporated	TRANS PNP 40V 0.2A DFN1006-3 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 250mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Supplier Device Package: 3-DFN1006 (1.0x0.6)	pacchetto: 3-UFDFN	Azione106.950	200mA	40V	400mV @ 5mA, 50mA	50nA (ICBO)	100 @ 10mA, 1V	250mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	3-UFDFN	3-DFN1006 (1.0x0.6)
MJW1302AG	ON Semiconductor	TRANS PNP 230V 15A TO247 Transistor Type: PNP Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 10A Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7A, 5V Power - Max: 200W Frequency - Transition: 30MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	pacchetto: TO-247-3	Azione19.560	15A	230V	2V @ 1A, 10A	50µA (ICBO)	50 @ 7A, 5V	200W	30MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
BCX55E6327	Infineon Technologies	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 2 W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89-4-2	pacchetto: -	Request a Quote	1 A	60 V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	2 W	100MHz	150°C (TJ)	Surface Mount	TO-243AA	PG-SOT89-4-2
MPS2907RLRP	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625 mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92 (TO-226)	pacchetto: -	Request a Quote	600 mA	40 V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	625 mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92 (TO-226)
D882-GR	MDD	TRANS NPN 30V 3A SOT89-3L Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V Power - Max: 500 mW Frequency - Transition: 90MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3L	pacchetto: -	Request a Quote	3 A	30 V	400mV @ 200mA, 2A	10µA	60 @ 1A, 2V	500 mW	90MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3L
JANSR2N2906AL	Microchip Technology	TRANS PNP 60V 0.6A TO18 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	pacchetto: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2N2991	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 5 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	pacchetto: -	Request a Quote	1 A	80 V	3V @ 50µA, 200µA	-	-	5 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N4116	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 37 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	pacchetto: -	Request a Quote	5 A	80 V	600mV @ 200µA, 2mA	-	-	37 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
JANSD2N3019	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	pacchetto: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	10nA	100 @ 150mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
JANSF2N2907A	Microchip Technology	TRANS PNP 60V 0.6A TO18 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	pacchetto: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
SBC847BLT1GPO	onsemi	SS SOT23 GP XSTR SPCL TR Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 300 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	pacchetto: -	Request a Quote	100 mA	45 V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	300 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BCX56-QF	Nexperia USA Inc.	BCX56-Q/SOT89/MPT3 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 500 mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	pacchetto: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	500 mW	180MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
MMST4126T146	Rohm Semiconductor	TRANS GP BJT PNP 25V 0.2A 3-PIN Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V Power - Max: 200 mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	pacchetto: -	Request a Quote	200 mA	25 V	500mV @ 2mA, 20mA	100nA (ICBO)	82 @ 10mA, 10V	200 mW	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3

2SC2655-Y,T6SWFF(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

Azione3.360

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

JANTX2N7370

Microsemi Corporation

TRANS NPN DARL 100V 12A TO254

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Power - Max: 100W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA

pacchetto: TO-254-3, TO-254AA (Straight Leads)

Azione7.856

12A

100V

3V @ 120mA, 12A

1mA

1000 @ 6A, 3V

100W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-254-3, TO-254AA (Straight Leads)

TO-254AA

2STN2340

STMicroelectronics

TRANS PNP 40V 3A SOT-223

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Power - Max: 1.6W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

Azione6.480

3A

40V

350mV @ 150mA, 3A

100nA (ICBO)

180 @ 1A, 2V

1.6W

100MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2SB0766GRL

Panasonic Electronic Components

TRANS PNP 50V 1A MINI-PWR

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MiniP3-F2

pacchetto: TO-243AA

Azione4.560

1A

50V

400mV @ 50mA, 500mA

100nA (ICBO)

120 @ 500mA, 10V

1W

200MHz

150°C (TJ)

Surface Mount

TO-243AA

MiniP3-F2

NSCT2907ALT1G

ON Semiconductor

TRANS PNP 60V 0.6A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 225mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione4.640

600mA

60V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

225mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

KSC388YBU

Fairchild/ON Semiconductor

TRANS NPN 25V 0.05A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1.5mA, 15mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 12.5mA, 12.5V
Power - Max: 300mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione7.616

50mA

25V

200mV @ 1.5mA, 15mA

100nA (ICBO)

20 @ 12.5mA, 12.5V

300mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

MJ4035

STMicroelectronics

TRANS NPN DARL 100V 16A TO-3

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 16A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 16A
Current - Collector Cutoff (Max): 3mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 10A, 3V
Power - Max: 150W
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

pacchetto: TO-204AA, TO-3

Azione7.032

16A

100V

4V @ 80mA, 16A

3mA

1000 @ 10A, 3V

150W

-

200°C (TJ)

Chassis Mount

TO-204AA, TO-3

TO-3

BC182LB_D75Z

Fairchild/ON Semiconductor

TRANS NPN 50V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Power - Max: 350mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione3.472

100mA

50V

600mV @ 5mA, 100mA

15nA (ICBO)

40 @ 10µA, 5V

350mW

150MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SB12990P

Panasonic Electronic Components

TRANS PNP 60V 3A TO-220F

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 4V
Power - Max: 2W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-A1

pacchetto: TO-220-3 Full Pack

Azione3.056

3A

60V

1V @ 50mA, 2A

100µA

400 @ 500mA, 4V

2W

30MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F-A1

MPS2924

Fairchild/ON Semiconductor

TRANS NPN 25V 0.1A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 10V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione3.136

100mA

25V

-

500nA (ICBO)

150 @ 2mA, 10V

625mW

-

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2SB14350RA

Panasonic Electronic Components

TRANS PNP 50V 2A MT-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 2V
Power - Max: 1.5W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: MT-3-A1

pacchetto: 3-SIP

Azione14.700

2A

50V

300mV @ 50mA, 1A

100nA (ICBO)

120 @ 200mA, 2V

1.5W

80MHz

150°C (TJ)

Through Hole

3-SIP

MT-3-A1

MJD112-TP

Micro Commercial Co

TRANS NPN 100V 2A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Power - Max: 1W
Frequency - Transition: 25MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione26.214

2A

100V

3V @ 40mA, 4A

20nA

1000 @ 2A, 3V

1W

25MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

BCV47,215

Nexperia USA Inc.

TRANS NPN DARL 60V 0.5A SOT23

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 250mW
Frequency - Transition: 220MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione33.600

500mA

60V

1V @ 100µA, 100mA

100nA (ICBO)

10000 @ 100mA, 5V

250mW

220MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BCW66KHE6327HTSA1

Infineon Technologies

TRANS NPN 45V 0.8A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 500mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione274.314

800mA

45V

450mV @ 50mA, 500mA

20nA (ICBO)

250 @ 100mA, 1V

500mW

170MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

MJD32CTF

Fairchild/ON Semiconductor

TRANS PNP 100V 3A DPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 1.56W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione175.296

3A

100V

1.2V @ 375mA, 3A

50µA

10 @ 3A, 4V

1.56W

3MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

MMBT3906LP-7B

Diodes Incorporated

TRANS PNP 40V 0.2A DFN1006-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Supplier Device Package: 3-DFN1006 (1.0x0.6)

pacchetto: 3-UFDFN

Azione106.950

200mA

40V

400mV @ 5mA, 50mA

50nA (ICBO)

100 @ 10mA, 1V

250mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

3-UFDFN

3-DFN1006 (1.0x0.6)

MJW1302AG

ON Semiconductor

TRANS PNP 230V 15A TO247

Transistor Type: PNP
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7A, 5V
Power - Max: 200W
Frequency - Transition: 30MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

pacchetto: TO-247-3

Azione19.560

15A

230V

2V @ 1A, 10A

50µA (ICBO)

50 @ 7A, 5V

200W

30MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

BCX55E6327

Infineon Technologies

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 2 W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PG-SOT89-4-2

pacchetto: -

Request a Quote

1 A

60 V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

2 W

100MHz

150°C (TJ)

Surface Mount

TO-243AA

PG-SOT89-4-2

MPS2907RLRP

onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625 mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92 (TO-226)

pacchetto: -

Request a Quote

600 mA

40 V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

625 mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92 (TO-226)

D882-GR

MDD

TRANS NPN 30V 3A SOT89-3L

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V
Power - Max: 500 mW
Frequency - Transition: 90MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3L

pacchetto: -

Request a Quote

3 A

30 V

400mV @ 200mA, 2A

10µA

60 @ 1A, 2V

500 mW

90MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3L

JANSR2N2906AL

Microchip Technology

TRANS PNP 60V 0.6A TO18

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

pacchetto: -

Request a Quote

600 mA

60 V

1.6V @ 50mA, 500mA

50nA

40 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

2N2991

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 5 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

pacchetto: -

Request a Quote

1 A

80 V

3V @ 50µA, 200µA

-

5 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2N4116

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 37 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

pacchetto: -

Request a Quote

5 A

80 V

600mV @ 200µA, 2mA

-

37 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

JANSD2N3019

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

pacchetto: -

Request a Quote

1 A

80 V

500mV @ 50mA, 500mA

10nA

100 @ 150mA, 10V

800 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

JANSF2N2907A

Microchip Technology

TRANS PNP 60V 0.6A TO18

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

pacchetto: -

Request a Quote

600 mA

60 V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

SBC847BLT1GPO

onsemi

SS SOT23 GP XSTR SPCL TR

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

pacchetto: -

Request a Quote

100 mA

45 V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

300 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BCX56-QF

Nexperia USA Inc.

BCX56-Q/SOT89/MPT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 500 mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

pacchetto: -

Request a Quote

1 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

500 mW

180MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

MMST4126T146

Rohm Semiconductor

TRANS GP BJT PNP 25V 0.2A 3-PIN

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
Power - Max: 200 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

pacchetto: -

Request a Quote

200 mA

25 V

500mV @ 2mA, 20mA

100nA (ICBO)

82 @ 10mA, 10V

200 mW

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3