Pagina 211 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BD545C-S	Bourns Inc.	TRANS NPN DARL 100V 15A Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1V @ 2A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 4V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	pacchetto: TO-218-3	Azione6.272	15A	100V	1V @ 2A, 10A	700µA	10 @ 10A, 4V	3.5W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-218-3	SOT-93
KSB798GTF	Fairchild/ON Semiconductor	TRANS PNP 25V 1A SOT-89 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Power - Max: 2W Frequency - Transition: 110MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	pacchetto: TO-243AA	Azione3.952	1A	25V	400mV @ 100mA, 1A	100nA (ICBO)	200 @ 100mA, 1V	2W	110MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
2N6193	Microsemi Corporation	TRANS PNP 100V 5A TO-39 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	pacchetto: TO-205AD, TO-39-3 Metal Can	Azione4.528	5A	100V	1.2V @ 500mA, 5A	100µA	60 @ 2A, 2V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTX2N3637L	Microsemi Corporation	TRANS PNP 175V 1A Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	pacchetto: TO-205AA, TO-5-3 Metal Can	Azione3.376	1A	175V	600mV @ 5mA, 50mA	10µA	100 @ 50mA, 10V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
ZTX696BSTZ	Diodes Incorporated	TRANS NPN 180V 0.5A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V Power - Max: 1W Frequency - Transition: 70MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	pacchetto: E-Line-3, Formed Leads	Azione2.064	500mA	180V	250mV @ 5mA, 200mA	100nA (ICBO)	150 @ 200mA, 5V	1W	70MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
NJVMJD253T4G-VF01	ON Semiconductor	TRANS PNP 100V 4A DPAK Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V Power - Max: 12.5W Frequency - Transition: 40MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione5.744	4A	100V	600mV @ 100mA, 1A	100nA (ICBO)	40 @ 200mA, 1V	12.5W	40MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
2SC6099-E	ON Semiconductor	TRANS NPN 100V 2A TP Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Power - Max: 800mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TP	pacchetto: TO-251-3 Short Leads, IPak, TO-251AA	Azione2.704	2A	100V	165mV @ 100mA, 1A	1µA (ICBO)	300 @ 100mA, 5V	800mW	300MHz	150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TP
BC56-16PA,115	Nexperia USA Inc.	TRANSISTOR NPN 80V 1A SOT1061 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 420mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Supplier Device Package: DFN2020-3	pacchetto: 3-UDFN	Azione7.680	1A	80V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	420mW	180MHz	150°C (TJ)	Surface Mount	3-UDFN	DFN2020-3
TIP30CG	ON Semiconductor	TRANS PNP 100V 1A TO220AB Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Power - Max: 2W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	pacchetto: TO-220-3	Azione7.360	1A	100V	700mV @ 125mA, 1A	300µA	15 @ 1A, 4V	2W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
KSC945CGTA	Fairchild/ON Semiconductor	TRANS NPN 50V 0.15A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Power - Max: 250mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione146.304	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 1mA, 6V	250mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PMMT491A,215	Nexperia USA Inc.	TRANS NPN 40V 1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Power - Max: 250mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione3.040	1A	40V	500mV @ 100mA, 1A	100nA	300 @ 500mA, 5V	250mW	150MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
2SD2671TL	Rohm Semiconductor	TRANS NPN 30V 2A TSMT3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Power - Max: 1W Frequency - Transition: 280MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Supplier Device Package: TSMT3	pacchetto: SC-96	Azione3.424	2A	30V	370mV @ 75mA, 1.5A	100nA (ICBO)	270 @ 200mA, 2V	1W	280MHz	150°C (TJ)	Surface Mount	SC-96	TSMT3
BCP55TA	Diodes Incorporated	TRANS NPN 60V 1A SOT223-4 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: TO-261-4, TO-261AA	Azione22.392	1A	60V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	2W	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
PBSS4021PZ,115	Nexperia USA Inc.	TRANS PNP 20V 6.6A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 6.6A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 240mV @ 350mA, 7A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V Power - Max: 2.6W Frequency - Transition: 85MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: TO-261-4, TO-261AA	Azione19.350	6.6A	20V	240mV @ 350mA, 7A	100nA	150 @ 4A, 2V	2.6W	85MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BUX87	STMicroelectronics	TRANS NPN 450V 0.5A SOT-32 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 450V Vce Saturation (Max) @ Ib, Ic: 1V @ 20mA, 200mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 40mA, 5V Power - Max: 40W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: SOT-32-3	pacchetto: TO-225AA, TO-126-3	Azione37.620	500mA	450V	1V @ 20mA, 200mA	100µA	12 @ 40mA, 5V	40W	20MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	SOT-32-3
2SA1668	Sanken	TRANS PNP 200V 2A TO220F Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 1V @ 70mA, 700mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 700mA, 10V Power - Max: 25W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	pacchetto: TO-220-3 Full Pack	Azione36.540	2A	200V	1V @ 70mA, 700mA	10µA (ICBO)	60 @ 700mA, 10V	25W	20MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
2N3442-PBFREE	Central Semiconductor Corp	TRANS NPN 140V 10A TO3 Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A Current - Collector Cutoff (Max): 200mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Power - Max: 117 W Frequency - Transition: 80kHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	pacchetto: -	Azione192	10 A	140 V	5V @ 2A, 10A	200mA	20 @ 3A, 4V	117 W	80kHz	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
JANSD2N3019S	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	pacchetto: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	10nA	100 @ 150mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANSL2N3635UB	Microchip Technology	TRANS PNP 140V 1A UB Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Power - Max: 1.5 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	pacchetto: -	Request a Quote	1 A	140 V	600mV @ 5mA, 50mA	10µA	100 @ 10mA, 10V	1.5 W	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB
JANSP2N5151	Microchip Technology	RH POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	pacchetto: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	30 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANSL2N3439	Microchip Technology	RH POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	pacchetto: -	Request a Quote	1 A	350 V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800 mW	-	-55°C ~ 200°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
495220TU_SN00120	onsemi	TRANS NPN DARL 325V 4A TO220-3 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 325 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2A Current - Collector Cutoff (Max): 5mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 5V Power - Max: 40 W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	pacchetto: -	Request a Quote	4 A	325 V	1.5V @ 5mA, 2A	5mA (ICBO)	1000 @ 3A, 5V	40 W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
2N3392-PBFREE	Central Semiconductor Corp	TRANS NPN 25V TO92-3 Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V Power - Max: - Frequency - Transition: 120MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: -	Azione29.910	-	25 V	-	100nA (ICBO)	150 @ 2mA, 4.5V	-	120MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
TTA1713-Y-LF	Toshiba Semiconductor and Storage	TRANS PNP 45V 0.5A SMINI Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 200 mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	pacchetto: -	Azione9.000	500 mA	45 V	400mV @ 50mA, 500mA	100nA (ICBO)	120 @ 100mA, 1V	200 mW	80MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
JAN2N3507AU4	Microchip Technology	TRANS NPN 50V 1UA U4 Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 1V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	pacchetto: -	Request a Quote	3 A	50 V	1.5V @ 250mA, 2.5A	1µA	35 @ 500mA, 1V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U4
BCP68-25-ZLX	Nexperia USA Inc.	TRANS NPN 20V 2A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V Power - Max: 1.35 W Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: -	Request a Quote	2 A	20 V	600mV @ 200mA, 2A	100nA (ICBO)	160 @ 500mA, 1V	1.35 W	170MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BCX51-QX	Nexperia USA Inc.	BCX51-Q/SOT89/MPT3 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 500 mW Frequency - Transition: 145MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	pacchetto: -	Azione3.000	1 A	45 V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	500 mW	145MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2SB1120G-TD-E	onsemi	BIP PNP 2.5A 10V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BD545C-S

Bourns Inc.

TRANS NPN DARL 100V 15A

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1V @ 2A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 4V
Power - Max: 3.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93

pacchetto: TO-218-3

Azione6.272

15A

100V

1V @ 2A, 10A

700µA

10 @ 10A, 4V

3.5W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-218-3

SOT-93

KSB798GTF

Fairchild/ON Semiconductor

TRANS PNP 25V 1A SOT-89

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Power - Max: 2W
Frequency - Transition: 110MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

pacchetto: TO-243AA

Azione3.952

1A

25V

400mV @ 100mA, 1A

100nA (ICBO)

200 @ 100mA, 1V

2W

110MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

2N6193

Microsemi Corporation

TRANS PNP 100V 5A TO-39

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

pacchetto: TO-205AD, TO-39-3 Metal Can

Azione4.528

5A

100V

1.2V @ 500mA, 5A

100µA

60 @ 2A, 2V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANTX2N3637L

Microsemi Corporation

TRANS PNP 175V 1A

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 175V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

pacchetto: TO-205AA, TO-5-3 Metal Can

Azione3.376

1A

175V

600mV @ 5mA, 50mA

10µA

100 @ 50mA, 10V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

ZTX696BSTZ

Diodes Incorporated

TRANS NPN 180V 0.5A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 180V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V
Power - Max: 1W
Frequency - Transition: 70MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

pacchetto: E-Line-3, Formed Leads

Azione2.064

500mA

180V

250mV @ 5mA, 200mA

100nA (ICBO)

150 @ 200mA, 5V

1W

70MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

NJVMJD253T4G-VF01

ON Semiconductor

TRANS PNP 100V 4A DPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Power - Max: 12.5W
Frequency - Transition: 40MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione5.744

4A

100V

600mV @ 100mA, 1A

100nA (ICBO)

40 @ 200mA, 1V

12.5W

40MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

2SC6099-E

ON Semiconductor

TRANS NPN 100V 2A TP

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Power - Max: 800mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

Azione2.704

2A

100V

165mV @ 100mA, 1A

1µA (ICBO)

300 @ 100mA, 5V

800mW

300MHz

150°C (TJ)

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

TP

BC56-16PA,115

Nexperia USA Inc.

TRANSISTOR NPN 80V 1A SOT1061

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 420mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Supplier Device Package: DFN2020-3

pacchetto: 3-UDFN

Azione7.680

1A

80V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

420mW

180MHz

150°C (TJ)

Surface Mount

3-UDFN

DFN2020-3

TIP30CG

ON Semiconductor

TRANS PNP 100V 1A TO220AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

pacchetto: TO-220-3

Azione7.360

1A

100V

700mV @ 125mA, 1A

300µA

15 @ 1A, 4V

2W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

KSC945CGTA

Fairchild/ON Semiconductor

TRANS NPN 50V 0.15A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione146.304

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 1mA, 6V

250mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

PMMT491A,215

Nexperia USA Inc.

TRANS NPN 40V 1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Power - Max: 250mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione3.040

1A

40V

500mV @ 100mA, 1A

100nA

300 @ 500mA, 5V

250mW

150MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

2SD2671TL

Rohm Semiconductor

TRANS NPN 30V 2A TSMT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Power - Max: 1W
Frequency - Transition: 280MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: TSMT3

pacchetto: SC-96

Azione3.424

2A

30V

370mV @ 75mA, 1.5A

100nA (ICBO)

270 @ 200mA, 2V

1W

280MHz

150°C (TJ)

Surface Mount

SC-96

TSMT3

BCP55TA

Diodes Incorporated

TRANS NPN 60V 1A SOT223-4

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 2W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

Azione22.392

1A

60V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

2W

150MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

PBSS4021PZ,115

Nexperia USA Inc.

TRANS PNP 20V 6.6A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 6.6A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 350mA, 7A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V
Power - Max: 2.6W
Frequency - Transition: 85MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

Azione19.350

6.6A

20V

240mV @ 350mA, 7A

100nA

150 @ 4A, 2V

2.6W

85MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BUX87

STMicroelectronics

TRANS NPN 450V 0.5A SOT-32

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 1V @ 20mA, 200mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 40mA, 5V
Power - Max: 40W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: SOT-32-3

pacchetto: TO-225AA, TO-126-3

Azione37.620

500mA

450V

1V @ 20mA, 200mA

100µA

12 @ 40mA, 5V

40W

20MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

SOT-32-3

2SA1668

Sanken

TRANS PNP 200V 2A TO220F

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 1V @ 70mA, 700mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 700mA, 10V
Power - Max: 25W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

pacchetto: TO-220-3 Full Pack

Azione36.540

2A

200V

1V @ 70mA, 700mA

10µA (ICBO)

60 @ 700mA, 10V

25W

20MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

2N3442-PBFREE

Central Semiconductor Corp

TRANS NPN 140V 10A TO3

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A
Current - Collector Cutoff (Max): 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Power - Max: 117 W
Frequency - Transition: 80kHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

pacchetto: -

Azione192

10 A

140 V

5V @ 2A, 10A

200mA

20 @ 3A, 4V

117 W

80kHz

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

JANSD2N3019S

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

pacchetto: -

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1 A

80 V

500mV @ 50mA, 500mA

10nA

100 @ 150mA, 10V

800 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANSL2N3635UB

Microchip Technology

TRANS PNP 140V 1A UB

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Power - Max: 1.5 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

pacchetto: -

Request a Quote

1 A

140 V

600mV @ 5mA, 50mA

10µA

100 @ 10mA, 10V

1.5 W

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB

JANSP2N5151

Microchip Technology

RH POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

pacchetto: -

Request a Quote

2 A

80 V

1.5V @ 500mA, 5A

50µA

30 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANSL2N3439

Microchip Technology

RH POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

pacchetto: -

Request a Quote

1 A

350 V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800 mW

-

-55°C ~ 200°C

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

495220TU_SN00120

onsemi

TRANS NPN DARL 325V 4A TO220-3

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 325 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2A
Current - Collector Cutoff (Max): 5mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 5V
Power - Max: 40 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

pacchetto: -

Request a Quote

4 A

325 V

1.5V @ 5mA, 2A

5mA (ICBO)

1000 @ 3A, 5V

40 W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

2N3392-PBFREE

Central Semiconductor Corp

TRANS NPN 25V TO92-3

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Power - Max: -
Frequency - Transition: 120MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: -

Azione29.910

-

25 V

-

100nA (ICBO)

150 @ 2mA, 4.5V

-

120MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

TTA1713-Y-LF

Toshiba Semiconductor and Storage

TRANS PNP 45V 0.5A SMINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 200 mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

pacchetto: -

Azione9.000

500 mA

45 V

400mV @ 50mA, 500mA

100nA (ICBO)

120 @ 100mA, 1V

200 mW

80MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

JAN2N3507AU4

Microchip Technology

TRANS NPN 50V 1UA U4

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 1V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

pacchetto: -

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3 A

50 V

1.5V @ 250mA, 2.5A

1µA

35 @ 500mA, 1V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U4

BCP68-25-ZLX

Nexperia USA Inc.

TRANS NPN 20V 2A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Power - Max: 1.35 W
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: -

Request a Quote

2 A

20 V

600mV @ 200mA, 2A

100nA (ICBO)

160 @ 500mA, 1V

1.35 W

170MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BCX51-QX

Nexperia USA Inc.

BCX51-Q/SOT89/MPT3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 500 mW
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

pacchetto: -

Azione3.000

1 A

45 V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

500 mW

145MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2SB1120G-TD-E

onsemi

BIP PNP 2.5A 10V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-