Pagina 185 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SA1428-Y,T2F(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V SC71 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	pacchetto: SC-71	Azione5.072	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM
CMUT5551E BK	Central Semiconductor Corp	TRANS PNP Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 220V Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Power - Max: 250mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	pacchetto: SOT-523	Azione4.192	600mA	220V	100mV @ 5mA, 50mA	50nA	120 @ 10mA, 5V	250mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
2SC536NG-NPA-AT	ON Semiconductor	TRANS NPN 50V 0.15A NPA Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 1mA, 6V Power - Max: 500mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-226AA	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione25.200	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	280 @ 1mA, 6V	500mW	200MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-226AA
2N6517G	ON Semiconductor	TRANS NPN 350V 0.5A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione4.800	500mA	350V	1V @ 5mA, 50mA	50nA (ICBO)	20 @ 50mA, 10V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N3057A	Microsemi Corporation	TRANS NPN 80V 1A TO-46 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46-3	pacchetto: TO-206AB, TO-46-3 Metal Can	Azione6.688	1A	80V	500mV @ 50mA, 500mA	10nA	50 @ 500mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46-3
SMMBT2369ALT1G	ON Semiconductor	TRANS NPN 15V 0.2A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 225mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione5.232	200mA	15V	500mV @ 10mA, 100mA	400nA	20 @ 100mA, 1V	225mW	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
NSVBC857CWT1G	ON Semiconductor	TRANS PNP 45V 0.1A SOT-323 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	pacchetto: SC-70, SOT-323	Azione2.992	100mA	45V	650mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	150mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
BC546A A1G	TSC America Inc.	TRANSISTOR, NPN, 65V, 0.1A, 110A Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione3.664	100mA	65V	-	15nA (ICBO)	110 @ 2mA, 5V	500mW	-	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92
PBSS304NZ,135	Nexperia USA Inc.	TRANS NPN 60V 5.2A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 5.2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 280mV @ 260mA, 5.2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V Power - Max: 2W Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: TO-261-4, TO-261AA	Azione4.288	5.2A	60V	280mV @ 260mA, 5.2A	100nA (ICBO)	250 @ 2A, 2V	2W	130MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
ZXT14P40DXTA	Diodes Incorporated	TRANS PNP LO SAT -40V -4A 8-MSOP Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 160mV @ 200mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Power - Max: 1.1W Frequency - Transition: 185MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Azione5.024	4A	40V	160mV @ 200mA, 4A	100nA	300 @ 1A, 2V	1.1W	185MHz	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
PBHV8215Z,115	Nexperia USA Inc.	TRANS NPN 150V 2A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 280mV @ 400mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 10V Power - Max: 1.45W Frequency - Transition: 33MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: TO-261-4, TO-261AA	Azione20.592	2A	150V	280mV @ 400mA, 2A	100nA	100 @ 1A, 10V	1.45W	33MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
ZX5T955GTA	Diodes Incorporated	TRANS PNP 140V 4A SOT-223 Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Power - Max: 3W Frequency - Transition: 120MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: TO-261-4, TO-261AA	Azione821.280	4A	140V	360mV @ 300mA, 3A	20nA (ICBO)	100 @ 1A, 5V	3W	120MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2SC4617EBTLR	Rohm Semiconductor	TRANS NPN 50V 0.15A EMT3 Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	pacchetto: SC-89, SOT-490	Azione24.000	150mA	50V	400mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	150mW	180MHz	150°C (TJ)	Surface Mount	SC-89, SOT-490	EMT3F (SOT-416FL)
BC808-25LT1G	ON Semiconductor	TRANS PNP 25V 0.5A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione108.000	500mA	25V	700mV @ 50mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	300mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
TIP120	STMicroelectronics	TRANS NPN DARL 60V 5A TO-220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	pacchetto: TO-220-3	Azione683.988	5A	60V	4V @ 20mA, 5A	500µA	1000 @ 3A, 3V	2W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
MMSTA42-TP	Micro Commercial Co	TRANS NPN 300V 0.2A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 200mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	pacchetto: SC-70, SOT-323	Azione165.006	200mA	300V	500mV @ 2mA, 20mA	100nA (ICBO)	40 @ 30mA, 10V	200mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
JANKCCD2N5151	Microchip Technology	RH POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	pacchetto: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	30 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2N5416UA	Microchip Technology	TRANS PNP 300V 1A UA Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Power - Max: 750 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	pacchetto: -	Request a Quote	1 A	300 V	2V @ 5mA, 50mA	1mA	30 @ 50mA, 10V	750 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
BD139-6-BP	Micro Commercial Co	TRANS NPN 80V 1.5A TO126 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 1.25 W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	pacchetto: -	Request a Quote	1.5 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	1.25 W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
CJD50-TR13-PBFREE	Central Semiconductor Corp	TRANS NPN 400V 1A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Power - Max: 1.56 W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	pacchetto: -	Request a Quote	1 A	400 V	1V @ 200mA, 1A	200µA	30 @ 300mA, 10V	1.56 W	10MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
JAN2N3765	Microchip Technology	TRANS PNP 60V 1.5A TO46 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46 (TO-206AB)	pacchetto: -	Request a Quote	1.5 A	60 V	900mV @ 100mA, 1A	100µA (ICBO)	40 @ 500mA, 1V	500 mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46 (TO-206AB)
JAN2N3868U4	Microchip Technology	TRANS PNP 60V 0.003A UB Transistor Type: PNP Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	pacchetto: -	Request a Quote	3 mA	60 V	1.5V @ 250mA, 2.5A	100µA (ICBO)	30 @ 1.5A, 2V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U4
JANSR2N4449	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 15 V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46	pacchetto: -	Request a Quote	-	15 V	450mV @ 10mA, 100mA	400nA	20 @ 100mA, 1V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46
2C3250A	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N5091	Microsemi Corporation	NPN SILICON TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N5658	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 30 W Frequency - Transition: - Operating Temperature: - Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	pacchetto: -	Request a Quote	10 A	80 V	-	-	-	30 W	-	-	Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
MMBT3906_F080	onsemi	TRANS PNP 40V 0.2A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 350 mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	pacchetto: -	Request a Quote	200 mA	40 V	400mV @ 5mA, 50mA	-	100 @ 10mA, 1V	350 mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BCX51-16-QF	Nexperia USA Inc.	BCX51-16-Q/SOT89/MPT3 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 500 mW Frequency - Transition: 145MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	pacchetto: -	Azione11.685	1 A	45 V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	500 mW	145MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89

2SA1428-Y,T2F(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V SC71

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

pacchetto: SC-71

Azione5.072

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

SC-71

MSTM

CMUT5551E BK

Central Semiconductor Corp

TRANS PNP

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 220V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

pacchetto: SOT-523

Azione4.192

600mA

220V

100mV @ 5mA, 50mA

50nA

120 @ 10mA, 5V

250mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

SOT-523

2SC536NG-NPA-AT

ON Semiconductor

TRANS NPN 50V 0.15A NPA

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 1mA, 6V
Power - Max: 500mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-226AA

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione25.200

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

280 @ 1mA, 6V

500mW

200MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-226AA

2N6517G

ON Semiconductor

TRANS NPN 350V 0.5A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione4.800

500mA

350V

1V @ 5mA, 50mA

50nA (ICBO)

20 @ 50mA, 10V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N3057A

Microsemi Corporation

TRANS NPN 80V 1A TO-46

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46-3

pacchetto: TO-206AB, TO-46-3 Metal Can

Azione6.688

1A

80V

500mV @ 50mA, 500mA

10nA

50 @ 500mA, 10V

500mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AB, TO-46-3 Metal Can

TO-46-3

SMMBT2369ALT1G

ON Semiconductor

TRANS NPN 15V 0.2A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Power - Max: 225mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione5.232

200mA

15V

500mV @ 10mA, 100mA

400nA

20 @ 100mA, 1V

225mW

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

NSVBC857CWT1G

ON Semiconductor

TRANS PNP 45V 0.1A SOT-323

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

pacchetto: SC-70, SOT-323

Azione2.992

100mA

45V

650mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

150mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

BC546A A1G

TSC America Inc.

TRANSISTOR, NPN, 65V, 0.1A, 110A

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione3.664

100mA

65V

-

15nA (ICBO)

110 @ 2mA, 5V

500mW

-

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92

PBSS304NZ,135

Nexperia USA Inc.

TRANS NPN 60V 5.2A SOT-223

Transistor Type: NPN
Current - Collector (Ic) (Max): 5.2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 280mV @ 260mA, 5.2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Power - Max: 2W
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

Azione4.288

5.2A

60V

280mV @ 260mA, 5.2A

100nA (ICBO)

250 @ 2A, 2V

2W

130MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

ZXT14P40DXTA

Diodes Incorporated

TRANS PNP LO SAT -40V -4A 8-MSOP

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 160mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 1.1W
Frequency - Transition: 185MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Azione5.024

4A

40V

160mV @ 200mA, 4A

100nA

300 @ 1A, 2V

1.1W

185MHz

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

PBHV8215Z,115

Nexperia USA Inc.

TRANS NPN 150V 2A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 280mV @ 400mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 10V
Power - Max: 1.45W
Frequency - Transition: 33MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

Azione20.592

2A

150V

280mV @ 400mA, 2A

100nA

100 @ 1A, 10V

1.45W

33MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

ZX5T955GTA

Diodes Incorporated

TRANS PNP 140V 4A SOT-223

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Power - Max: 3W
Frequency - Transition: 120MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

Azione821.280

4A

140V

360mV @ 300mA, 3A

20nA (ICBO)

100 @ 1A, 5V

3W

120MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2SC4617EBTLR

Rohm Semiconductor

TRANS NPN 50V 0.15A EMT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)

pacchetto: SC-89, SOT-490

Azione24.000

150mA

50V

400mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

150mW

180MHz

150°C (TJ)

Surface Mount

SC-89, SOT-490

EMT3F (SOT-416FL)

BC808-25LT1G

ON Semiconductor

TRANS PNP 25V 0.5A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione108.000

500mA

25V

700mV @ 50mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

300mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

TIP120

STMicroelectronics

TRANS NPN DARL 60V 5A TO-220

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

pacchetto: TO-220-3

Azione683.988

5A

60V

4V @ 20mA, 5A

500µA

1000 @ 3A, 3V

2W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

MMSTA42-TP

Micro Commercial Co

TRANS NPN 300V 0.2A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 200mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

pacchetto: SC-70, SOT-323

Azione165.006

200mA

300V

500mV @ 2mA, 20mA

100nA (ICBO)

40 @ 30mA, 10V

200mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

JANKCCD2N5151

Microchip Technology

RH POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

pacchetto: -

Request a Quote

2 A

80 V

1.5V @ 500mA, 5A

50µA

30 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

2N5416UA

Microchip Technology

TRANS PNP 300V 1A UA

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 750 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

pacchetto: -

Request a Quote

1 A

300 V

2V @ 5mA, 50mA

1mA

30 @ 50mA, 10V

750 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

BD139-6-BP

Micro Commercial Co

TRANS NPN 80V 1.5A TO126

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1.25 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

pacchetto: -

Request a Quote

1.5 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

1.25 W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

CJD50-TR13-PBFREE

Central Semiconductor Corp

TRANS NPN 400V 1A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Power - Max: 1.56 W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

pacchetto: -

Request a Quote

1 A

400 V

1V @ 200mA, 1A

200µA

30 @ 300mA, 10V

1.56 W

10MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

JAN2N3765

Microchip Technology

TRANS PNP 60V 1.5A TO46

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46 (TO-206AB)

pacchetto: -

Request a Quote

1.5 A

60 V

900mV @ 100mA, 1A

100µA (ICBO)

40 @ 500mA, 1V

500 mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-206AB, TO-46-3 Metal Can

TO-46 (TO-206AB)

JAN2N3868U4

Microchip Technology

TRANS PNP 60V 0.003A UB

Transistor Type: PNP
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

pacchetto: -

Request a Quote

3 mA

60 V

1.5V @ 250mA, 2.5A

100µA (ICBO)

30 @ 1.5A, 2V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U4

JANSR2N4449

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 15 V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46

pacchetto: -

Request a Quote

-

15 V

450mV @ 10mA, 100mA

400nA

20 @ 100mA, 1V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AB, TO-46-3 Metal Can

TO-46

2C3250A

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

2N5091

Microsemi Corporation

NPN SILICON TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

2N5658

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 30 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

pacchetto: -

Request a Quote

10 A

80 V

-

30 W

-

Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

MMBT3906_F080

onsemi

TRANS PNP 40V 0.2A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 350 mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

pacchetto: -

Request a Quote

200 mA

40 V

400mV @ 5mA, 50mA

-

100 @ 10mA, 1V

350 mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BCX51-16-QF

Nexperia USA Inc.

BCX51-16-Q/SOT89/MPT3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 500 mW
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

pacchetto: -

Azione11.685

1 A

45 V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

500 mW

145MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89