Pagina 138 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Singoli

Record 20.307
Pagina  138/726
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SA1020-Y,F(M
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
pacchetto: TO-226-3, TO-92-3 Long Body
Azione2.432
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
JANTXV2N4931
Microsemi Corporation

TRANS PNP 250V 0.2A TO-39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione3.536
200mA
250V
1.2V @ 3mA, 30mA
250nA (ICBO)
50 @ 30mA, 10V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
2SD2623G0L
Panasonic Electronic Components

TRANS NPN 20V 0.5A SMINI-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 150mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
pacchetto: SC-85
Azione2.176
500mA
20V
400mV @ 20mA, 500mA
100nA (ICBO)
200 @ 500mA, 2V
150mW
200MHz
150°C (TJ)
Surface Mount
SC-85
SMini3-F2
STW3040
STMicroelectronics

TRANS NPN 400V 30A TO-247

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 30A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 4A, 20A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 6A, 5V
  • Power - Max: 160W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacchetto: TO-247-3
Azione7.904
30A
400V
800mV @ 4A, 20A
1mA
18 @ 6A, 5V
160W
-
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot MMBT2222
Fairchild/ON Semiconductor

TRANS NPN 30V 0.6A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 350mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione1.124.748
600mA
30V
1.6V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
350mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BUX10
STMicroelectronics

TRANS NPN 125V 25A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 125V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 2A, 20A
  • Current - Collector Cutoff (Max): 1.5mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 2V
  • Power - Max: 150W
  • Frequency - Transition: 8MHz
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
pacchetto: TO-204AA, TO-3
Azione3.344
25A
125V
1.2V @ 2A, 20A
1.5mA
20 @ 10A, 2V
150W
8MHz
200°C (TJ)
Chassis Mount
TO-204AA, TO-3
TO-3
2SA2039-H
ON Semiconductor

TRANS PNP 50V 5A TP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 800mW
  • Frequency - Transition: 360MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione3.024
5A
50V
430mV @ 100mA, 2A
1µA (ICBO)
200 @ 500mA, 2V
800mW
360MHz
-
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
US6T5TR
Rohm Semiconductor

TRANS PNP 30V 2A TUMT6

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
  • Power - Max: 400mW
  • Frequency - Transition: 280MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione5.040
2A
30V
370mV @ 75mA, 1.5A
100nA (ICBO)
270 @ 200mA, 2V
400mW
280MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
PCP1103-TD-H
ON Semiconductor

TRANS PNP 30V 1.5A PCP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 375mV @ 15mA, 750mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 1.3W
  • Frequency - Transition: 450MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
pacchetto: TO-243AA
Azione7.568
1.5A
30V
375mV @ 15mA, 750mA
100nA (ICBO)
200 @ 100mA, 2V
1.3W
450MHz
150°C (TJ)
Surface Mount
TO-243AA
PCP
BCW61CT116
Rohm Semiconductor

TRANS PNP 32V 0.2A SST3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 32V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
  • Power - Max: -
  • Frequency - Transition: 180MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SST3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.968
200mA
32V
-
-
250 @ 2mA, 5V
-
180MHz
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SST3
NSVBC850CLT1G
ON Semiconductor

TRANS NPN BIPOLAR 45V SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 225mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.304
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
225mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
2SC3324-BL(TE85L,F
Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A S-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.880
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
350 @ 2mA, 6V
150mW
100MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236
2SA1962-O(Q)
Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO-3PN

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 130W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
pacchetto: TO-3P-3, SC-65-3
Azione9.948
15A
230V
3V @ 800mA, 8A
5µA (ICBO)
80 @ 1A, 5V
130W
30MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
CMPT2369 TR
Central Semiconductor Corp

TRANS NPN 15V 0.5A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 400nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 500MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.256
500mA
15V
250mV @ 1mA, 10mA
400nA (ICBO)
40 @ 10mA, 1V
350mW
500MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot 2SD2662T100
Rohm Semiconductor

TRANS NPN 30V 1.5A SOT-89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 330MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MPT3
pacchetto: TO-243AA
Azione23.268
1.5A
30V
350mV @ 50mA, 1A
100nA (ICBO)
270 @ 100mA, 2V
2W
330MHz
150°C (TJ)
Surface Mount
TO-243AA
MPT3
2SC39400RA
Panasonic Electronic Components

TRANS NPN 25V 1A TO-92NL

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92NL-A1
pacchetto: TO-226-3, TO-92-3 Long Body
Azione7.584
1A
25V
400mV @ 50mA, 500mA
100nA (ICBO)
120 @ 500mA, 10V
1W
200MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92NL-A1
hot 2N4126
Central Semiconductor Corp

TRANS PNP 25V TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
  • Power - Max: -
  • Frequency - Transition: 250MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione601.788
-
25V
-
50nA (ICBO)
120 @ 2mA, 1V
-
250MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
hot MJ15003G
ON Semiconductor

TRANS NPN 140V 20A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 20A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5A, 2V
  • Power - Max: 250W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
pacchetto: TO-204AA, TO-3
Azione20.400
20A
140V
1V @ 500mA, 5A
250µA
25 @ 5A, 2V
250W
2MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
2SCR502U3T106
Rohm Semiconductor

TRANS NPN 30V 0.5A UMT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 200nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 200 mW
  • Frequency - Transition: 360MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
pacchetto: -
Azione210
500 mA
30 V
300mV @ 10mA, 200mA
200nA (ICBO)
200 @ 100mA, 2V
200 mW
360MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
UMT3
JANSL2N2907AUBC-TR
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UBC
pacchetto: -
Request a Quote
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UBC
JANSM2N3637L
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 175 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
pacchetto: -
Request a Quote
1 A
175 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
MMBT5401-AU_R1_000A1
Panjit International Inc.

TRANS PNP 150V 0.6A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 225 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: -
Azione8.325
600 mA
150 V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
225 mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
JANTX2N3637UB-TR
Microchip Technology

TRANS PNP 175V 1A 3SMD

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 175 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1.5 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
Request a Quote
1 A
175 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
1.5 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
2N5608
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 2.5mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 25 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
pacchetto: -
Request a Quote
5 A
80 V
1.5V @ 500µA, 2.5mA
-
-
25 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-213AA, TO-66-2
TO-66 (TO-213AA)
2SB1197-P-TP
Micro Commercial Co

Interface

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 32 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
  • Power - Max: 200 mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: -
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800 mA
32 V
500mV @ 50mA, 500mA
500nA (ICBO)
82 @ 100mA, 3V
200 mW
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2N333T2
Microchip Technology

NPN POWER SILICON TRANSISTORS

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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-
-
-
-
-
-
-
-
-
-
2SC3467E
onsemi

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 200 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: 3-MP
pacchetto: -
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100 mA
200 V
600mV @ 2mA, 20mA
100nA (ICBO)
100 @ 10mA, 10V
1 W
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
3-MP
BC63916-D27Z
onsemi

TRANS NPN 80V 1A TO92-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92-3
pacchetto: -
Azione13.386
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
1 W
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3