Pagina 126 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Singoli

Record 20.307
Pagina  126/726
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BCV27E6395HTMA1
Infineon Technologies

TRANSISTOR AF SOT23

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
  • Power - Max: 360mW
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione5.568
500mA
30V
1V @ 100µA, 100mA
100nA (ICBO)
20000 @ 100mA, 5V
360mW
170MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BCP5116E6327HTSA1
Infineon Technologies

TRANS PNP 45V 1A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
pacchetto: TO-261-4, TO-261AA
Azione6.432
1A
45V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
2W
125MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
TIP30B-S
Bourns Inc.

TRANS PNP 80V 1A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacchetto: TO-220-3
Azione2.096
1A
80V
700mV @ 125mA, 1A
300µA
15 @ 1A, 4V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot NJL21193DG
ON Semiconductor

TRANS PNP 250V 16A TO-264

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 16A
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
  • Power - Max: 200W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-5
  • Supplier Device Package: TO-264
pacchetto: TO-264-5
Azione4.096
16A
250V
4V @ 3.2A, 16A
100µA
25 @ 8A, 5V
200W
4MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-264-5
TO-264
2N5401RLRMG
ON Semiconductor

TRANS PNP 150V 0.6A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione7.680
600mA
150V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
625mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PN2907TA
Fairchild/ON Semiconductor

TRANS PNP 40V 0.8A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione2.000
800mA
40V
1.6V @ 50mA, 500mA
20nA (ICBO)
100 @ 150mA, 10V
625mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MMBT2132T3
ON Semiconductor

TRANS NPN 30V 0.7A SC74-6

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 700mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 3V
  • Power - Max: 342mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SC-74
pacchetto: SC-74, SOT-457
Azione2.288
700mA
30V
400mV @ 70mA, 700mA
1µA (ICBO)
150 @ 100mA, 3V
342mW
-
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
SC-74
CPH3216-TL-EX
ON Semiconductor

TRANS NPN 50V 1A CPH3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 420MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CPH
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.328
1A
50V
190mV @ 10mA, 500mA
100nA (ICBO)
200 @ 100mA, 2V
900mW
420MHz
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CPH
SBC857BWT1G
ON Semiconductor

TRANS PNP 45V 0.1A SOT-323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)
pacchetto: SC-70, SOT-323
Azione4.368
100mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
150mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70-3 (SOT323)
hot 2N4037
Central Semiconductor Corp

TRANS PNP 40V 1A TO-39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 60MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione5.776
1A
40V
1.4V @ 15mA, 150mA
250nA (ICBO)
50 @ 150mA, 10V
1W
60MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
BC857A,215
Nexperia USA Inc.

TRANS PNP 45V 0.1A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione26.022
100mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
125 @ 2mA, 5V
250mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
DSC5002S0L
Panasonic Electronic Components

TRANS NPN 50V 0.5A SMINI3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 160MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2-B
pacchetto: SC-85
Azione24.006
500mA
50V
600mV @ 30mA, 300mA
100nA (ICBO)
170 @ 150mA, 10V
150mW
160MHz
150°C (TJ)
Surface Mount
SC-85
SMini3-F2-B
MJE15029G
ON Semiconductor

TRANS PNP 120V 8A TO220AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
  • Power - Max: 50W
  • Frequency - Transition: 30MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione19.824
8A
120V
500mV @ 100mA, 1A
100µA
20 @ 4A, 2V
50W
30MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot 2N6491G
ON Semiconductor

TRANS PNP 80V 15A TO220AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
  • Power - Max: 1.8W
  • Frequency - Transition: 5MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione11.880
15A
80V
3.5V @ 5A, 15A
1mA
20 @ 5A, 4V
1.8W
5MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot PN2222A
Central Semiconductor Corp

TRANS NPN 40V 0.8A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione306.324
800mA
40V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
625mW
300MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
hot KSH127TF
Fairchild/ON Semiconductor

TRANS PNP DARL 100V 8A DPAK

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
  • Power - Max: 1.75W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.344
8A
100V
4V @ 80mA, 8A
10µA
1000 @ 4A, 4V
1.75W
-
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot 2N5210BU
Fairchild/ON Semiconductor

TRANS NPN 50V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 30MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione5.232
100mA
50V
700mV @ 1mA, 10mA
50nA
200 @ 100µA, 5V
625mW
30MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot BC847CLT1G
ON Semiconductor

TRANS NPN 45V 0.1A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione924.960
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
300mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
hot NZT651
Fairchild/ON Semiconductor

TRANS NPN 60V 4A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
  • Power - Max: 1.2W
  • Frequency - Transition: 75MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-4
pacchetto: TO-261-4, TO-261AA
Azione212.568
4A
60V
500mV @ 200mA, 2A
100nA (ICBO)
40 @ 2A, 2V
1.2W
75MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-4
ECH8201-TL-H
onsemi

TRANSISTOR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 300mA, 6A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1.6 W
  • Frequency - Transition: 230MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
pacchetto: -
Request a Quote
10 A
50 V
100mV @ 300mA, 6A
100nA (ICBO)
200 @ 500mA, 2V
1.6 W
230MHz
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
SSTX304S
SMC Diode Solutions

TRANS PNP 60V 0.6A SOT23-3

  • Transistor Type: PNP + Diode (Isolated)
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10mV
  • Power - Max: 350 mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: -
Azione5.964
600 mA
60 V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10mV
350 mW
-
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
JANS2N2218
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
pacchetto: -
Request a Quote
800 mA
50 V
1.6V @ 50mA, 500mA
10nA
40 @ 150mA, 10V
800 mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
2N6520RL1
Motorola

TRANS PNP 350V 0.5A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
  • Power - Max: 1.5 W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92 (TO-226)
pacchetto: -
Request a Quote
500 mA
350 V
1V @ 5mA, 50mA
50nA (ICBO)
30 @ 30mA, 10V
1.5 W
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92 (TO-226)
D42C1
Harris Corporation

TRANS NPN 30V 3A TO202AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 200mA, 1V
  • Power - Max: 2.1 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-202 Long Tab
  • Supplier Device Package: TO-202AB
pacchetto: -
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3 A
30 V
500mV @ 100mA, 1A
10µA
25 @ 200mA, 1V
2.1 W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-202 Long Tab
TO-202AB
PBSS302ND-QX
Nexperia USA Inc.

PBSS302ND-Q/SOT457/SC-74

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 360 mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
pacchetto: -
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4 A
40 V
450mV @ 600mA, 6A
100nA
300 @ 1A, 2V
360 mW
150MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
JAN2N2432AUB
Microchip Technology

TRANS NPN 30V 0.1A UB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
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100 mA
30 V
-
-
-
-
-
200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
JAN2N2369AUB-TR
Microchip Technology

TRANS NPN 20V UB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
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-
20 V
450mV @ 10mA, 100mA
400nA
20 @ 100mA, 1V
360 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
JANTXV2N2222AUB-TR
Microchip Technology

TRANS NPN 50V 0.8A UB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
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800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB