Pagina 76 - Transistor - Bipolari (BJT) - Singoli, pre-polarizzati | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Singoli, pre-polarizzati

Record 4.130
Pagina  76/148
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
BCR 153L3 E6327
Infineon Technologies

TRANS PREBIAS PNP 250MW TSLP-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
pacchetto: SC-101, SOT-883
Azione4.784
100mA
50V
2.2k
2.2k
20 @ 20mA, 5V
300mV @ 1mA, 20mA
100nA (ICBO)
200MHz
250mW
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BCR142WE6327HTSA1
Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
pacchetto: SC-70, SOT-323
Azione3.952
100mA
50V
22k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
150MHz
250mW
Surface Mount
SC-70, SOT-323
PG-SOT323-3
RN2118(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W SSM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
pacchetto: SC-75, SOT-416
Azione5.440
100mA
50V
47k
10k
50 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200MHz
100mW
Surface Mount
SC-75, SOT-416
SSM
RN2107CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
pacchetto: SC-101, SOT-883
Azione6.848
50mA
20V
10k
47k
120 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1106ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
pacchetto: SC-101, SOT-883
Azione2.656
80mA
50V
4.7k
47k
80 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
100mW
Surface Mount
SC-101, SOT-883
CST3
FJN4306RBU
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione3.216
100mA
50V
10k
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
DDTC143XCA-7
Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione6.656
100mA
50V
4.7k
10k
30 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
UNR521M00L
Panasonic Electronic Components

TRANS PREBIAS NPN 150MW SMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
pacchetto: SC-70, SOT-323
Azione2.448
100mA
50V
2.2k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
150mW
Surface Mount
SC-70, SOT-323
SMini3-G1
hot UNR521L00L
Panasonic Electronic Components

TRANS PREBIAS NPN 150MW SMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
pacchetto: SC-70, SOT-323
Azione36.000
100mA
50V
4.7k
4.7k
20 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
150mW
Surface Mount
SC-70, SOT-323
SMini3-G1
DRDPB26W-7
Diodes Incorporated

TRANS PREBIAS PNP 0.2W SOT363

  • Transistor Type: PNP - Pre-Biased + Diode
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 220
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione7.840
600mA
50V
220
4.7k
47 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
200MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
PDTD123YQAZ
Nexperia USA Inc.

TRANS PREBIAS NPN 3DFN

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 210MHz
  • Power - Max: 325mW
  • Mounting Type: Surface Mount
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1010D-3
pacchetto: 3-XDFN Exposed Pad
Azione4.784
500mA
50V
2.2k
10k
70 @ 50mA, 5V
100mV @ 2.5mA, 50mA
500nA
210MHz
325mW
Surface Mount
3-XDFN Exposed Pad
DFN1010D-3
hot DTA115EEBTL
Rohm Semiconductor

TRANS PREBIAS PNP 150MW EMT3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 100k
  • Resistor - Emitter Base (R2) (Ohms): 100k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: EMT3
pacchetto: SC-75, SOT-416
Azione720.000
20mA
50V
100k
100k
82 @ 5mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
150mW
Surface Mount
SC-75, SOT-416
EMT3
hot DTB114EKT146
Rohm Semiconductor

TRANS PREBIAS PNP 200MW SMT3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione49.392
500mA
50V
10k
10k
56 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
200MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
DDTC143ZE-7
Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
pacchetto: SOT-523
Azione4.992
100mA
50V
4.7k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
150mW
Surface Mount
SOT-523
SOT-523
RN2118MFV(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.15W VESM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
pacchetto: SOT-723
Azione7.136
100mA
50V
47k
10k
50 @ 10mA, 5V
300mV @ 500µA, 5mA
500nA
-
150mW
Surface Mount
SOT-723
VESM
hot DTC123TKAT146
Rohm Semiconductor

TRANS PREBIAS NPN 200MW SMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione38.400
100mA
50V
2.2k
-
100 @ 1mA, 5V
300mV @ 250µA, 5mA
500nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
DRC5614T0L
Panasonic Electronic Components

TRANS PREBIAS NPN 150MW SMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2-B
pacchetto: SC-85
Azione3.248
600mA
20V
10k
-
100 @ 50mA, 5V
80mV @ 2.5mA, 50mA
1µA (ICBO)
-
150mW
Surface Mount
SC-85
SMini3-F2-B
hot DTC114GUAT106
Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
pacchetto: SC-70, SOT-323
Azione36.000
100mA
50V
-
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA (ICBO)
250MHz
200mW
Surface Mount
SC-70, SOT-323
UMT3
UNR511D00L
Panasonic Electronic Components

TRANS PREBIAS PNP 150MW SMINI3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
pacchetto: SC-70, SOT-323
Azione112.644
100mA
50V
47k
10k
30 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
150mW
Surface Mount
SC-70, SOT-323
SMini3-G1
DDTC125TCA-7
Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 200k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione24.108
100mA
50V
200k
-
100 @ 1mA, 5V
300mV @ 50µA, 500µA
500nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DRC5114T0L
Panasonic Electronic Components

TRANS PREBIAS NPN 150MW SMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2-B
pacchetto: SC-85
Azione24.030
100mA
50V
10k
-
160 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
150mW
Surface Mount
SC-85
SMini3-F2-B
DRA2523E0L
Panasonic Electronic Components

TRANS PREBIAS PNP 200MW MINI3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G3-B
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione28.890
500mA
50V
2.2k
2.2k
40 @ 100mA, 10V
250mV @ 5mA, 100mA
1µA
-
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G3-B
hot DTC124EUBTL
Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3F

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: UMT3F
pacchetto: SC-85
Azione36.000
30mA
50V
22k
22k
56 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
200mW
Surface Mount
SC-85
UMT3F
hot DTA114EET1G
ON Semiconductor

TRANS PREBIAS PNP 200MW SC75

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75, SOT-416
pacchetto: SC-75, SOT-416
Azione36.636
100mA
50V
10k
10k
35 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
200mW
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
hot MUN2214T1G
ON Semiconductor

TRANS PREBIAS NPN 230MW SC59

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 230mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione32.340
100mA
50V
10k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
230mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
NTE2367
NTE Electronics, Inc

TRANS PREBIAS NPN 50V TO92S

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 300 mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
pacchetto: -
Request a Quote
100 mA
50 V
4.7 kOhms
4.7 kOhms
30 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250 MHz
300 mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
MUN2241T1G
onsemi

TRANS PREBIAS NPN 50V 0.1A SC59

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 100 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 338 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
pacchetto: -
Request a Quote
100 mA
50 V
100 kOhms
-
160 @ 5mA, 10V
250mV @ 5mA, 10mA
500nA
-
338 mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
NHDTA124EUX
Nexperia USA Inc.

TRANS PREBIAS PNP 80V SOT323

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 150 MHz
  • Power - Max: 235 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: -
Request a Quote
100 mA
80 V
22 kOhms
22 kOhms
70 @ 10mA, 5V
100mV @ 500µA, 10mA
100nA
150 MHz
235 mW
Surface Mount
SC-70, SOT-323
SOT-323