Pagina 45 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - RF

Record 1.633
Pagina  45/59
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP540ESDE6327HTSA1
Infineon Technologies

TRANS RF NPN 4.5V ESD SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 30GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
  • Gain: 21.5dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacchetto: SC-82A, SOT-343
Azione3.264
5V
30GHz
0.9dB ~ 1.4dB @ 1.8GHz
21.5dB
250mW
50 @ 20mA, 3.5V
80mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFR 181T E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SC-75

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz
  • Gain: 19.5dB
  • Power - Max: 175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
pacchetto: SC-75, SOT-416
Azione7.712
12V
8GHz
1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz
19.5dB
175mW
50 @ 5mA, 8V
20mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
PG-SC-75
NE68039-T1-R46-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: -
pacchetto: TO-253-4, TO-253AA
Azione2.576
10V
10GHz
1.8dB @ 2GHz
12dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
-
NE85633-T1B-R25-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.472
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
125 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BFG25AW/X,115
NXP

TRANS RF NPN 5GHZ 5V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 2dB @ 1GHz
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
  • Current - Collector (Ic) (Max): 6.5mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343 Reverse Pinning
  • Supplier Device Package: 4-SO
pacchetto: SOT-343 Reverse Pinning
Azione2.720
5V
5GHz
1.9dB ~ 2dB @ 1GHz
-
500mW
50 @ 500µA, 1V
6.5mA
175°C (TJ)
Surface Mount
SOT-343 Reverse Pinning
4-SO
NE68018-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 10.2dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacchetto: SC-82A, SOT-343
Azione4.608
10V
10GHz
1.8dB @ 2GHz
10.2dB
150mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
NE46134-AZ
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
  • Gain: 7dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacchetto: TO-243AA
Azione4.544
15V
5.5GHz
1.5dB ~ 2dB @ 500MHz ~ 1GHz
7dB
2W
40 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
KSC1730YBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 15V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione4.112
15V
1.1GHz
-
-
250mW
120 @ 5mA, 10V
50mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot KSC1674OBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione960.000
20V
600MHz
3dB ~ 5dB @ 100MHz
-
250mW
70 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2N3663
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 12V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2.1GHz
  • Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
  • Gain: 1.5dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione2.160
12V
2.1GHz
6.5dB @ 60MHz
1.5dB
350mW
20 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
NE664M04-A
CEL

RF TRANSISTOR NPN SOT-343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 20GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 735mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
pacchetto: SOT-343F
Azione4.448
5V
20GHz
-
12dB
735mW
40 @ 100mA, 3V
500mA
150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
BFS520,115
NXP

TRANS NPN 70MA 15V 9GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
pacchetto: SC-70, SOT-323
Azione5.184
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
300mW
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
MSC1175M
Microsemi Corporation

TRANS RF BIPO 400W 12A M218

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 400W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M218
  • Supplier Device Package: M218
pacchetto: M218
Azione2.992
65V
1.025GHz ~ 1.15GHz
-
8dB
400W
15 @ 1A, 5V
12A
250°C (TJ)
Chassis Mount
M218
M218
hot 1014-6A
Microsemi Corporation

TRANS RF BIPO 19W 1A 55LV1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 1GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 7.5dB
  • Power - Max: 19W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55LV
  • Supplier Device Package: 55LV
pacchetto: 55LV
Azione3.856
50V
1GHz ~ 1.4GHz
-
7dB ~ 7.5dB
19W
-
1A
200°C (TJ)
Chassis Mount
55LV
55LV
CPH6001A-TL-E
ON Semiconductor

TRANS NPN BIPO 12V 100MA CPH6

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11dB
  • Power - Max: 800mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-CPH
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione2.992
12V
6.7GHz
1.1dB @ 1GHz
11dB
800mW
90 @ 30mA, 5V
100mA
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-CPH
2SC5490A-TL-H
ON Semiconductor

TRANS NPN BIPO 30MA 10V SSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz
  • Gain: 10dB ~ 5.5dB @ 1.5GHz
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-81
  • Supplier Device Package: 3-SSFP
pacchetto: SC-81
Azione5.472
10V
8GHz
1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz
10dB ~ 5.5dB @ 1.5GHz
100mW
90 @ 10mA, 5V
30mA
150°C (TJ)
Surface Mount
SC-81
3-SSFP
2SC5646A-TL-H
ON Semiconductor

TRANS NPN BIPO 30MA 4V SSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4V
  • Frequency - Transition: 10GHz ~ 12.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 9.5dB ~ 10.5dB @ 2GHz
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-81
  • Supplier Device Package: 3-SSFP
pacchetto: SC-81
Azione2.704
4V
10GHz ~ 12.5GHz
1.5dB @ 2GHz
9.5dB ~ 10.5dB @ 2GHz
100mW
100 @ 5mA, 1V
30mA
150°C (TJ)
Surface Mount
SC-81
3-SSFP
hot MMBTH10-7
Diodes Incorporated

TRANS NPN VHF/UHF 25V SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione288.000
25V
650MHz
-
-
300mW
60 @ 4mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
PH2729-25M
M/A-Com Technology Solutions

TRANS BIPOLAR 25W 2.7-2.9GHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.2dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.776
60V
-
-
9.2dB
70W
-
4A
200°C (TJ)
Chassis Mount
-
-
MSC80205
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
NTE319P
NTE Electronics, Inc

RF TRANS NPN 20V 500MHZ TO92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): 2.7dB @ 45MHz
  • Gain: 29dB
  • Power - Max: 625mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
pacchetto: -
Request a Quote
20V
500MHz
2.7dB @ 45MHz
29dB
625mW
20 @ 2mA, 10V
50mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
NESG2101M05-T1-A
Renesas Electronics Corporation

NESG2101 - NPN SIGE RF TRANSISTO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 17GHz
  • Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
  • Gain: 11dB ~ 19dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: M05
pacchetto: -
Request a Quote
5V
17GHz
0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
11dB ~ 19dB
500mW
130 @ 15mA, 2V
100mA
-
Surface Mount
SOT-343F
M05
MRF421
MACOM Technology Solutions

TRANS RF NPN 20V 20A 211-11

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 100W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
pacchetto: -
Request a Quote
20V
-
-
12dB
100W
10 @ 5A, 5V
20A
-
Chassis Mount
211-11, Style 2
211-11, Style 2
MS3456
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
NE68730-T1
CEL

TRANS NPN 2GHZ SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 2GHz
  • Gain: -
  • Power - Max: 90mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: -
Azione8.079
3V
11GHz
1.3dB ~ 2dB @ 2GHz
-
90mW
70 @ 20mA, 2V
30mA
-
Surface Mount
SC-70, SOT-323
SOT-323
BLA6H0912-DTS-112
Ampleon USA Inc.

BLA6H0912-DTS/SOT634/TRAY

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
CA3227E
Intersil

NPN TRANSISTOR ARRAY

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 85mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
pacchetto: -
Request a Quote
8V
3GHz
-
-
85mW
40 @ 1mA, 6V
20mA
175°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
2N5583
Solid State Inc.

PNP SIL RF TO39

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 2V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacchetto: -
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30V
1.3GHz
-
-
1W
25 @ 100mA, 2V
500mA
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39