Pagina 28 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - RF

Record 1.633
Pagina  28/59
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BF 775 E6327
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16dB
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 45mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.568
15V
5GHz
1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
10.5dB ~ 16dB
280mW
70 @ 15mA, 8V
45mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
hot NE67818-T1-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
  • Gain: 10dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacchetto: SC-82A, SOT-343
Azione108.000
6V
12GHz
1.7dB @ 2GHz
10dB
200mW
75 @ 30mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
hot 2SC5010-T1-A
CEL

RF TRANSISTOR NPN SOT-523

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 8.5dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
pacchetto: SOT-523
Azione851.880
6V
12GHz
1.5dB @ 2GHz
8.5dB
125mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
0105-50
Microsemi Corporation

TRANS RF BIPO 140W 500MHZ 55JT2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 100MHz ~ 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB ~ 10dB
  • Power - Max: 140W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 7A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55JT
  • Supplier Device Package: 55JT
pacchetto: 55JT
Azione6.528
65V
100MHz ~ 500MHz
-
8.5dB ~ 10dB
140W
10 @ 1A, 5V
7A
200°C (TJ)
Chassis Mount
55JT
55JT
MS2472
Microsemi Corporation

TRANS RF BIPO 1350W 40A M112

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 5.6dB
  • Power - Max: 1350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M112
  • Supplier Device Package: M112
pacchetto: M112
Azione2.864
65V
1.025GHz ~ 1.15GHz
-
5.6dB
1350W
5 @ 250mA, 5V
40A
200°C (TJ)
Chassis Mount
M112
M112
BFR94AW,115
NXP

TRANS NPN 5GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
pacchetto: SC-70, SOT-323
Azione6.512
15V
5GHz
2dB ~ 3dB @ 1GHz ~ 2GHz
-
300mW
65 @ 15mA, 10V
25mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
PN5179_D26Z
Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.808
12V
2GHz
5dB @ 200MHz
15dB
350mW
25 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MMBTH81_D87Z
Fairchild/ON Semiconductor

TRANS RF PNP 20V 50MA SOT-23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.528
20V
600MHz
-
-
225mW
60 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
UPA895TS-A
CEL

TRANSISTOR NPN DUAL 6-SMINI

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
  • Gain: -
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-Super Lead-Less MiniMold
pacchetto: 6-SMD, Flat Leads
Azione2.128
5.5V
6.5GHz
1.9dB ~ 2.5dB @ 2GHz
-
130mW
100 @ 5mA, 1V
100mA
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
6-Super Lead-Less MiniMold
NE68539-T1-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 11dB
  • Power - Max: 180mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
pacchetto: TO-253-4, TO-253AA
Azione7.904
6V
12GHz
1.5dB @ 2GHz
11dB
180mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
hot MPSH10
Fairchild/ON Semiconductor

TRANSISTOR NPN RF VHF/UHF TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione714.540
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BFG541,115
NXP

TRANS NPN 15V 9GHZ SOT223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
  • Gain: -
  • Power - Max: 650mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
  • Current - Collector (Ic) (Max): 120mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: TO-261-4, TO-261AA
Azione5.056
15V
9GHz
1.3dB ~ 2.4dB @ 900MHz
-
650mW
60 @ 40mA, 8V
120mA
175°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BFG505,215
NXP

TRANS NPN 6V 18MA SOT343N

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 18mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
pacchetto: TO-253-4, TO-253AA
Azione5.968
15V
9GHz
1.2dB ~ 2.1dB @ 900MHz
-
150mW
60 @ 5mA, 6V
18mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
0510-50A
Microsemi Corporation

TRANS RF BIPO 50W 1000MHZ 55AV2

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 27V
  • Frequency - Transition: 500MHz ~ 1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 50W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 3.7A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AV
  • Supplier Device Package: 55AV
pacchetto: 55AV
Azione2.464
27V
500MHz ~ 1GHz
-
7dB
50W
10 @ 500mA, 5V
3.7A
200°C (TJ)
Chassis Mount
55AV
55AV
1517-20M
Microsemi Corporation

TRANS RF BIPO 175W 3A 55LV1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.48GHz ~ 1.65GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.6dB ~ 9.3dB
  • Power - Max: 175W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 55LV-1
  • Supplier Device Package: 55LV-1
pacchetto: 55LV-1
Azione3.232
65V
1.48GHz ~ 1.65GHz
-
7.6dB ~ 9.3dB
175W
20 @ 500mA, 5V
3A
-
Chassis Mount
55LV-1
55LV-1
MS652S
Microsemi Corporation

TRANS RF BIPO 25W 2A M123

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 450MHz ~ 512MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M123
  • Supplier Device Package: M123
pacchetto: M123
Azione3.584
16V
450MHz ~ 512MHz
-
10dB
25W
10 @ 200mA, 5V
2A
200°C (TJ)
Chassis Mount
M123
M123
hot HFA3135IHZ96
Intersil

IC TRANS ARRAY PNP MATCH SOT23-6

  • Transistor Type: 2 PNP (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 5.2dB @ 900MHz
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 26mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacchetto: SOT-23-6
Azione5.040
9V
7GHz
5.2dB @ 900MHz
-
-
15 @ 10mA, 2V
26mA
150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
BFU550AVL
NXP

TRANS RF NPN 12V 50MA TO-236AB

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
  • Gain: 12dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.128
12V
11GHz
1.4dB @ 1.8GHz
12dB
450mW
60 @ 15mA, 8V
50mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
MRF10350
M/A-Com Technology Solutions

TRANS NPN 350W 1025MHZ-1150MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 31A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 355E-01
  • Supplier Device Package: 355E-01, Style 1
pacchetto: 355E-01
Azione4.800
65V
-
-
9dB
350W
20 @ 5A, 5V
31A
200°C (TJ)
Chassis Mount
355E-01
355E-01, Style 1
hot 2SC4093-T1-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 14.2dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
pacchetto: TO-253-4, TO-253AA
Azione47.076
12V
7GHz
1.1dB @ 1GHz
14.2dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
2SC2714-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANSISTOR NPN S-MINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
  • Gain: 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione100.962
30V
550MHz
2.5dB @ 100MHz
23dB
100mW
100 @ 1mA, 6V
20mA
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SC2714-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ S-MINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
  • Gain: 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione21.624
30V
550MHz
2.5dB @ 100MHz
23dB
100mW
70 @ 1mA, 6V
20mA
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
MPSH10RLRA
onsemi

TRANS NPN VHF/UHF SS 25V TO92

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC5010-A
CEL

RF TRANS NPN 6V 12GHZ SOT523

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 8.5dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: -
pacchetto: -
Request a Quote
6V
12GHz
1.5dB @ 2GHz
8.5dB
125mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
SOT-523
-
S9018
EVVO

TRANS NPN 1V5 SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: -
Azione8.700
15V
800MHz
-
-
200mW
70 @ 1mA, 5V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2N3866-TRAY
Central Semiconductor Corp

RF TRANS NPN 30V 500MHZ TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacchetto: -
Request a Quote
30V
500MHz
-
10dB
5W
10 @ 50mA, 5V
400mA
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
SD1430-02
Microsemi Corporation

TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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SD1330-05C
Microsemi Corporation

TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
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