Pagina 13 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - RF

Record 1.633
Pagina  13/59
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP540FESDE6327
Infineon Technologies

TRANS RF NPN 4.5V 80MA 4TSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 30GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
  • Gain: 20dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
pacchetto: 4-SMD, Flat Leads
Azione6.592
5V
30GHz
0.9dB ~ 1.4dB @ 1.8GHz
20dB
250mW
50 @ 20mA, 3.5V
80mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFS 386L6 E6327
Infineon Technologies

TRANSISTOR ARRAY DUAL NPN TSLP-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
  • Gain: 10dB ~ 14.5dB
  • Power - Max: 210mW, 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V / 60 @ 40mA, 3V
  • Current - Collector (Ic) (Max): 35mA, 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: PG-TSLP-6
pacchetto: 6-XFDFN
Azione3.232
6V
14GHz
1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
10dB ~ 14.5dB
210mW, 380mW
60 @ 15mA, 3V / 60 @ 40mA, 3V
35mA, 80mA
150°C (TJ)
Surface Mount
6-XFDFN
PG-TSLP-6
2SC5096-R,LF
Toshiba Semiconductor and Storage

TRANS RF NPN 10V 1GHz SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 1.4dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
pacchetto: SC-75, SOT-416
Azione5.952
10V
10GHz
1.4dB @ 1GHz
1.4dB
100mW
50 @ 7mA, 6V
15mA
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
MRF5812GR2
Microsemi Corporation

TRANS NPN 15V 200MA 8-SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.320
15V
5GHz
2dB ~ 3dB @ 500MHz
13dB ~ 15.5dB
1.25W
50 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BLS2731-20,114
Ampleon USA Inc.

TRANSISTOR RF POWER SOT445C

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 3.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-445C
  • Supplier Device Package: CDFM2
pacchetto: SOT-445C
Azione3.760
75V
3.1GHz
-
10dB
270W
40 @ 500mA, 5V
3A
200°C (TJ)
Surface Mount
SOT-445C
CDFM2
BLS2731-10,114
NXP

TRANSISTOR RF POWER SOT445C

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 3.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 145W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-445C
  • Supplier Device Package: CDFM2
pacchetto: SOT-445C
Azione2.544
75V
3.1GHz
-
10dB
145W
40 @ 250mA, 5V
1.5A
200°C (TJ)
Surface Mount
SOT-445C
CDFM2
BLT70,115
NXP

TRANS NPN 8V 250MA SOT223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 900MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 2.1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 4.8V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: TO-261-4, TO-261AA
Azione7.792
8V
900MHz
-
-
2.1W
25 @ 100mA, 4.8V
250mA
175°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
KSC1674COTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.408
20V
600MHz
3dB ~ 5dB @ 100MHz
-
250mW
70 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot KST5179MTF
Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 900MHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione294.000
12V
900MHz
4.5dB @ 200MHz
15dB
350mW
25 @ 3mA, 1V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MPS5179G
ON Semiconductor

TRANS NPN RF SS 12V TO92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione2.720
12V
2GHz
-
-
200mW
25 @ 3mA, 1V
50mA
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BFR520,235
NXP

TRANS NPN 15V 70MA 9GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione6.448
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
300mW
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
1517-110M
Microsemi Corporation

TRANS RF BIPO 350W 9A 55AW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.48GHz ~ 1.65GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.3dB ~ 8.6dB
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 9A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW-1
  • Supplier Device Package: 55AW-1
pacchetto: 55AW-1
Azione7.568
70V
1.48GHz ~ 1.65GHz
-
7.3dB ~ 8.6dB
350W
20 @ 1A, 5V
9A
-
Chassis Mount
55AW-1
55AW-1
JTDB25
Microsemi Corporation

TRANSISTOR BIPO 55AW-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.5dB
  • Power - Max: 97W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW-1
  • Supplier Device Package: 55AW-1
pacchetto: 55AW-1
Azione4.304
55V
960MHz ~ 1.215GHz
-
7.5dB
97W
20 @ 500mA, 5V
5A
200°C (TJ)
Chassis Mount
55AW-1
55AW-1
MS1582
Microsemi Corporation

TRANS RF BIPO 135W 8A M173

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 135W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M173
  • Supplier Device Package: M173
pacchetto: M173
Azione7.360
30V
470MHz ~ 860MHz
-
9dB
135W
10 @ 3A, 5V
8A
200°C (TJ)
Chassis Mount
M173
M173
TAN15
Microsemi Corporation

TRANS RF BIPO 175W 2A 55LT1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 8dB
  • Power - Max: 175W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55LT
  • Supplier Device Package: 55LT
pacchetto: 55LT
Azione4.320
50V
960MHz ~ 1.215GHz
-
7dB ~ 8dB
175W
-
2A
200°C (TJ)
Chassis Mount
55LT
55LT
MS2553C
Microsemi Corporation

TRANS RF BIPO 175W 4A M220

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.5dB
  • Power - Max: 175W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M220
  • Supplier Device Package: M220
pacchetto: M220
Azione7.520
25V
1.025GHz ~ 1.15GHz
-
10.5dB
175W
20 @ 500mA, 5V
4A
200°C (TJ)
Chassis Mount
M220
M220
HFA3127BZ96
Intersil

IC TRANS ARRAY NPN 16-SOIC

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione6.496
12V
8GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V
65mA
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
hot 2SC39300CL
Panasonic Electronic Components

TRANS NPN 20VCEO 30MA S-MINI 3P

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 250MHz
  • Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
pacchetto: SC-70, SOT-323
Azione28.740
20V
250MHz
2.8dB ~ 4dB @ 5MHz
-
150mW
110 @ 1mA, 10V
30mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SMini3-G1
2SC5095-R(TE85L,F)
Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 13dB ~ 7.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
pacchetto: SC-70, SOT-323
Azione7.776
10V
10GHz
1.8dB @ 2GHz
13dB ~ 7.5dB
100mW
50 @ 7mA, 6V
15mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
2SC5226A-5-TL-E
ON Semiconductor

TRANS NPN BIPO VHF-UHF MCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-MCP
pacchetto: SC-70, SOT-323
Azione23.922
10V
7GHz
1dB @ 1GHz
12dB
150mW
135 @ 20mA, 5V
70mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
3-MCP
BFP183WH6327XTSA1
Infineon Technologies

TRANS RF NPN 12V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
  • Gain: 22dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacchetto: SC-82A, SOT-343
Azione59.844
12V
8.5GHz
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
22dB
450mW
70 @ 15mA, 8V
65mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
hot MRF314
M/A-Com Technology Solutions

TRANS RF NPN 35V 3.4A 211-07

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13.5dB
  • Power - Max: 30W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 5V
  • Current - Collector (Ic) (Max): 3.4A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-07
  • Supplier Device Package: 211-07, Style 1
pacchetto: 211-07
Azione5.840
35V
-
-
13.5dB
30W
20 @ 1.5A, 5V
3.4A
-
Chassis Mount
211-07
211-07, Style 1
MPSH81
Central Semiconductor Corp

TRANS PNP 20V 50MA TO92

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione15.024
20V
600MHz
-
-
350mW
60 @ 5mA, 10V
50mA
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
PH2226-110M
MACOM Technology Solutions

TRANSISTOR,BIPOLAR,RADAR,110W,2.

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.4dB
  • Power - Max: 583W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: 2L-FLG
pacchetto: -
Request a Quote
65V
-
-
7.4dB
583W
-
15A
200°C (TJ)
Chassis Mount
2L-FLG
2L-FLG
MS2589
Microsemi Corporation

TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MRF6V14300MSR5
Freescale Semiconductor

RF POWER FIELD-EFFECT TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
PH1214-25M
MACOM Technology Solutions

TRANSISTOR,BIPOLAR,25W,28V,1.20-

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 67W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 2.8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: 2L-FLG
pacchetto: -
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70V
-
-
9.5dB
67W
-
2.8A
200°C (TJ)
Chassis Mount
2L-FLG
2L-FLG
2N3497
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
pacchetto: -
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120V
150MHz
-
-
400mW
40 @ 50mA, 10V
100mA
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)