Pagina 71 - Transistor - Bipolari (BJT) - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Array

Record 2.013
Pagina  71/72
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2N3811A
Central Semiconductor Corp

TRANS 2PNP 50MA 60V TO78-6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 600mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
pacchetto: TO-78-6 Metal Can
Azione7.728
50mA
60V
250mV @ 1mA, 100µA
10nA (ICBO)
300 @ 1mA, 5V
600mW
100MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
JAN2N3811
Microsemi Corporation

TRANS 2PNP 60V 0.05A TO78

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
pacchetto: TO-78-6 Metal Can
Azione3.360
50mA
60V
250mV @ 100µA, 1mA
10µA (ICBO)
300 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
NST3946DXV6T5
ON Semiconductor

TRANS NPN/PNP 40V 0.2A SOT563

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz, 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione4.768
200mA
40V
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
500mW
300MHz, 250MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
JAN2N2060L
Microsemi Corporation

TRANS 2NPN 60V 0.5A TO78

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Power - Max: 2.12W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
pacchetto: TO-78-6 Metal Can
Azione3.760
500mA
60V
300mV @ 5mA, 50mA
10µA (ICBO)
50 @ 10mA, 5V
2.12W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
SN75468DE4
Texas Instruments

TRANS 7NPN DARL 100V 0.5A 16SO

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione4.576
500mA
100V
1.6V @ 500µA, 350mA
-
-
-
-
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
hot BC847BS
Fairchild/ON Semiconductor

TRANS 2NPN 45V 0.1A SC70-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 210mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione6.950.640
100mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
210mW
-
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
STA406A
Sanken

TRANS 4NPN DARL 60V 6A 10-SIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
  • Power - Max: 4W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
pacchetto: 10-SIP
Azione5.568
6A
60V
1.5V @ 10mA, 3A
100µA (ICBO)
2000 @ 3A, 2V
4W
-
150°C (TJ)
Through Hole
10-SIP
10-SIP
hot SN75469N
Texas Instruments

TRANS 7NPN DARL 100V 0.5A DIP

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
pacchetto: 16-DIP (0.300", 7.62mm)
Azione15.720
500mA
100V
1.6V @ 500µA, 350mA
-
-
-
-
150°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
hot ZXTD4591E6TA
Diodes Incorporated

TRANS NPN/PNP 60V 1A SOT23-6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A / 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
  • Power - Max: 1.1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacchetto: SOT-23-6
Azione1.007.760
1A
60V
600mV @ 100mA, 1A / 500mV @ 100mA, 1A
100nA
100 @ 500mA, 5V
1.1W
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
hot NCV1413BDR2G
ON Semiconductor

TRANS 7NPN DARL 50V 0.5A 16SO

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione720.036
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
FMBA14
Fairchild/ON Semiconductor

TRANS NPN DARL 30V 1.2A SSOT-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
  • Power - Max: 700mW
  • Frequency - Transition: 1.25MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione3.808
1.2A
30V
1.5V @ 100µA, 100mA
100nA (ICBO)
20000 @ 100mA, 5V
700mW
1.25MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
hot STA302A
Sanken

TRANS 3PNP DARL 50V 4A 8SIP

  • Transistor Type: 3 PNP Darlington (Emitter Coupled)
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
  • Power - Max: 3W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-SIP
  • Supplier Device Package: 8-SIP
pacchetto: 8-SIP
Azione2.000
4A
50V
2V @ 10mA, 3A
100µA (ICBO)
1000 @ 3A, 4V
3W
-
150°C (TJ)
Through Hole
8-SIP
8-SIP
HN1A01FE-Y,LF
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A ES6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
pacchetto: SOT-563, SOT-666
Azione70.218
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
100mW
80MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
hot STA413A
Sanken

TRANS 4NPN 35V 3A 10-SIP

  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V
  • Power - Max: 4W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
pacchetto: 10-SIP
Azione5.616
3A
35V
500mV @ 5mA, 1A
10µA (ICBO)
500 @ 500mA, 4V
4W
-
150°C (TJ)
Through Hole
10-SIP
10-SIP
hot BC857S
Fairchild/ON Semiconductor

TRANS 2PNP 45V 0.2A SC70-6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione973.788
200mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
125 @ 2mA, 5V
300mW
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
BC857BS,135
Nexperia USA Inc.

TRANS 2PNP 45V 0.1A 6TSSOP

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP, SC-88
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione102.450
100mA
45V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
200mW
100MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP, SC-88
BC847BPN,115
Nexperia USA Inc.

TRANS NPN/PNP 45V 0.1A 6TSSOP

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP, SC-88
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione321.264
100mA
45V
300mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
300mW
100MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP, SC-88
hot ULN2803ADWR
Texas Instruments

TRANS 8NPN DARL 50V 0.5A 18SO

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOIC
pacchetto: 18-SOIC (0.295", 7.50mm Width)
Azione2.031.696
500mA
50V
1.6V @ 500µA, 350mA
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
18-SOIC (0.295", 7.50mm Width)
18-SOIC
2N6989UX
Microchip Technology

QUAD - SMALL-SIGNAL BJT

  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-CLCC
  • Supplier Device Package: 20-CLCC (8.89x8.89)
pacchetto: -
Request a Quote
800mA
50V
1V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
1W
-
-65°C ~ 200°C (TJ)
Surface Mount
20-CLCC
20-CLCC (8.89x8.89)
MPQ2907-PBFREE
Central Semiconductor Corp

TRANS 4PNP 40V 0.6A

  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V
  • Power - Max: 650mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
pacchetto: -
Request a Quote
600mA
40V
1.6V @ 30mA, 300mA
50nA (ICBO)
50 @ 300mA, 10V
650mW
200MHz
-65°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
BC857BSHX
Nexperia USA Inc.

BC857BSHX

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 270mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: -
Request a Quote
100mA
45V
300mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
270mW
100MHz
175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
BC846BPNHF
Nexperia USA Inc.

TRANS NPN/PNP 65V 0.1A 6TSSOP

  • Transistor Type: 1 NPN, 1 PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 270mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: -
Request a Quote
100mA
65V
300mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
270mW
100MHz
175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
MC1416BDR2
onsemi

TRANS DARLINGTON NPN 0.5A

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANS2N5795A
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
pacchetto: -
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600mA
60V
1.6V @ 50mA, 500mA
10µA (ICBO)
40 @ 150mA, 10V
600mW
-
-65°C ~ 175°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
MPQ7043-PBFREE
Central Semiconductor Corp

TRANS 4NPN 250V 0.5A

  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
  • Power - Max: 1.25W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
pacchetto: -
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500mA
250V
500mV @ 2mA, 20mA
100nA (ICBO)
40 @ 30mA, 10V
1.25W
50MHz
-65°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
JANTX2N5793
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
pacchetto: -
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600mA
40V
900mV @ 30mA, 300mA
10µA (ICBO)
40 @ 150mA, 10V
600mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
JAN2N6987U
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-SMD
pacchetto: -
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600mA
60V
1.6V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
1W
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
6-SMD
JANSF2N3810U-TR
Microchip Technology

DUAL RH SMALL-SIGNAL BJT

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: U
pacchetto: -
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50mA
60V
250mV @ 100µA, 1mA
10µA (ICBO)
150 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
U