Pagina 60 - Transistor - Bipolari (BJT) - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Array

Record 2.013
Pagina  60/72
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC846SE6433BTMA1
Infineon Technologies

TRANS 2NPN 65V 0.1A SOT363

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
pacchetto: 6-VSSOP, SC-88, SOT-363
Azione4.832
100mA
65V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
2N5794
Central Semiconductor Corp

TRANS 2NPN 600MA 40V TO78-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
pacchetto: TO-78-6 Metal Can
Azione4.832
600mA
40V
-
-
100 @ 150mA, 10V
600mW
250MHz
-
Through Hole
TO-78-6 Metal Can
TO-78-6
BCM847BS/ZLX
Nexperia USA Inc.

TRANS 2NPN 45V 0.1A 6TSSOP

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88-6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione4.192
-
-
-
-
-
-
-
-
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88-6
hot L603C
STMicroelectronics

TRANS 8NPN DARL 90V 0.4A 18DIP

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 400mA
  • Voltage - Collector Emitter Breakdown (Max): 90V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 500µA, 300mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1.8W
  • Frequency - Transition: -
  • Operating Temperature: -25°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 18-DIP
pacchetto: -
Azione124.920
400mA
90V
2V @ 500µA, 300mA
-
-
1.8W
-
-25°C ~ 150°C (TJ)
Through Hole
-
18-DIP
hot UP0440100L
Panasonic Electronic Components

TRANS 2PNP 50V 0.1A SSMINI6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 10V
  • Power - Max: 125mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMINI6-F1
pacchetto: SOT-563, SOT-666
Azione96.000
100mA
50V
500mV @ 10mA, 100mA
100µA
180 @ 2mA, 10V
125mW
80MHz
125°C (TJ)
Surface Mount
SOT-563, SOT-666
SSMINI6-F1
hot MMDT2222A-7
Diodes Incorporated

TRANS 2NPN 40V 0.6A SOT363

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione6.640
600mA
40V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
200mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot XN0640100L
Panasonic Electronic Components

TRANS 2PNP 50V 0.1A MINI6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
  • Power - Max: 300mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: MINI6-G1
pacchetto: SOT-23-6
Azione72.000
100mA
50V
500mV @ 10mA, 100mA
100µA
160 @ 2mA, 10V
300mW
80MHz
150°C (TJ)
Surface Mount
SOT-23-6
MINI6-G1
JAN2N6987
Microsemi Corporation

TRANS 4PNP 60V 0.6A TO116

  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1.5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: -
pacchetto: 14-DIP (0.300", 7.62mm)
Azione3.568
600mA
60V
1.6V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
1.5W
-
-65°C ~ 200°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
-
NSVT3904DXV6T1G
ON Semiconductor

TRANS 2NPN 40V 0.2A SOT563

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione6.224
200mA
40V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
500mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
NSVUMC5NT1G
ON Semiconductor

TRANS NPN/PNP PREBIAS 0.15W SC88

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.304
-
-
-
-
-
-
-
-
-
-
-
NMB2227AF
Nexperia USA Inc.

NMB2227A/SOT457/SC-74

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.320
-
-
-
-
-
-
-
-
-
-
-
hot ZDT617TA
Diodes Incorporated

TRANS 2NPN 15V 3A SM8

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
  • Power - Max: 2.5W
  • Frequency - Transition: 120MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8
pacchetto: SOT-223-8
Azione106.692
3A
15V
200mV @ 50mA, 3A
100nA
300 @ 200mA, 2V
2.5W
120MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-8
SM8
QS5Y1TR
Rohm Semiconductor

TRANS NPN/PNP 30V 3A TSMT5

  • Transistor Type: NPN, PNP (Emitter Coupled)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: 300MHz, 270MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSMT5
pacchetto: SOT-23-5 Thin, TSOT-23-5
Azione5.712
3A
30V
400mV @ 50mA, 1A
1µA (ICBO)
200 @ 500mA, 2V
1.25W
300MHz, 270MHz
150°C (TJ)
Surface Mount
SOT-23-5 Thin, TSOT-23-5
TSMT5
DMA904010R
Panasonic Electronic Components

TRANS 2PNP 50V 0.1A SSMINI6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 125mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
pacchetto: SOT-563, SOT-666
Azione6.448
100mA
50V
500mV @ 10mA, 100mA
100µA
210 @ 2mA, 10V
125mW
150MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
SSMini6-F3-B
PHPT610030PKX
Nexperia USA Inc.

TRANS 2PNP 100V 3A 8LFPAK

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
  • Power - Max: 1.25W
  • Frequency - Transition: 125MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacchetto: SOT-1205, 8-LFPAK56
Azione15.390
3A
100V
360mV @ 200mA, 2A
100nA
150 @ 500mA, 10V
1.25W
125MHz
175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
CMXT3946 TR
Central Semiconductor Corp

TRANS NPN/PNP 200MA SOT26

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 300MHz, 250MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: SOT-23-6
Azione28.224
200mA
40V
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
350mW
300MHz, 250MHz
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
EMX4T2R
Rohm Semiconductor

TRANS 2NPN 20V 0.05A 6EMT

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 1.5GHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
pacchetto: SOT-563, SOT-666
Azione94.962
50mA
20V
500mV @ 4mA, 20mA
500nA (ICBO)
56 @ 10mA, 10V
150mW
1.5GHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
hot MPQ3904
Central Semiconductor Corp

TRANS 4NPN 40V 0.2A

  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
pacchetto: 14-DIP (0.300", 7.62mm)
Azione7.512
200mA
40V
200mV @ 1mA, 10mA
50nA (ICBO)
75 @ 10mA, 1V
500mW
250MHz
-65°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
PBSS4041SN,115
Nexperia USA Inc.

TRANS 2NPN 60V 6.7A 8SO

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 6.7A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 350mA, 7A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V
  • Power - Max: 2.3W
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione22.488
6.7A
60V
350mV @ 350mA, 7A
100nA
150 @ 4A, 2V
2.3W
130MHz
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ULN2803ADWRG4
Texas Instruments

TRANS 8NPN DARL 50V 0.5A 18SO

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOIC
pacchetto: 18-SOIC (0.295", 7.50mm Width)
Azione995.820
500mA
50V
1.6V @ 500µA, 350mA
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
18-SOIC (0.295", 7.50mm Width)
18-SOIC
UPA500T-T1-A
Renesas Electronics Corporation

DUAL BIPOLAR TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
CTLM3410-M832D-BK
Central Semiconductor Corp

TRANSISTOR

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
  • Power - Max: 1.65W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TDFN Exposed Pad
  • Supplier Device Package: TLM832D
pacchetto: -
Request a Quote
1A
25V
450mV @ 100mA, 1A
100nA (ICBO)
100 @ 500mA, 1V
1.65W
100MHz
-65°C ~ 150°C (TJ)
Surface Mount
8-TDFN Exposed Pad
TLM832D
ZXTD6717E6QTA
Diodes Incorporated

SS LOW SAT TRANSISTOR SOT26

  • Transistor Type: 1 NPN, 1 PNP
  • Current - Collector (Ic) (Max): 1.5A, 1.25A
  • Voltage - Collector Emitter Breakdown (Max): 15V, 12V
  • Vce Saturation (Max) @ Ib, Ic: 245mV @ 20mA, 1.5A / 240mV @ 100mA, 1.25A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
  • Power - Max: 1.1W
  • Frequency - Transition: 180MHz, 220MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: -
Request a Quote
1.5A, 1.25A
15V, 12V
245mV @ 20mA, 1.5A / 240mV @ 100mA, 1.25A
10nA
300 @ 100mA, 2V
1.1W
180MHz, 220MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
BC847BSHX
Nexperia USA Inc.

TRANS 2NPN 45V 0.1A 6TSSOP

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 270mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: -
Request a Quote
100mA
45V
300mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
270mW
100MHz
175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
MMDT3946-7R-F
Diodes Incorporated

GENERAL PURPOSE TRANSISTOR SOT36

  • Transistor Type: 1 NPN, 1 PNP Complementary
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz, 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione9.000
200mA
40V
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
200mW
300MHz, 250MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
PBSS5160DS-QX
Nexperia USA Inc.

PBSS5160DS-Q/SOT457/SC-74

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 770mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
  • Power - Max: 290mW
  • Frequency - Transition: 185MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
pacchetto: -
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770mA
60V
330mV @ 100mA, 1A
100nA
200 @ 1mA, 5V
290mW
185MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
JANSR2N3810L
Microchip Technology

DUAL RH SMALL-SIGNAL BJT

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
pacchetto: -
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50mA
60V
250mV @ 100µA, 1mA
10µA (ICBO)
150 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
EMX51T2R
Rohm Semiconductor

NPN+NPN DRIVER TRANSISTOR. TWO 2

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
  • Power - Max: 150mW
  • Frequency - Transition: 400MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
pacchetto: -
Azione24.000
200mA
20V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 1mA, 2V
150mW
400MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6