Pagina 994 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IRD3CH9DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione4.816	-	-	-	-	-	-	-	-	-	-	-
RGP10M-7008E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione4.560	-	-	-	-	-	-	-	-	-	-	-
GI250-2-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 2KV 250MA DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 2000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AL, DO-41, Axial	Azione5.200	2000V	250mA	3.5V @ 250mA	Fast Recovery =< 500ns, > 200mA (Io)	2µs	5µA @ 2000V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
JANTX1N6622U	Microsemi Corporation	DIODE GEN PURP 600V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: SQ-MELF, A	Azione3.216	600V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
VS-MBRS120TRPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: 110pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-214AA, SMB	Azione426.000	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	110pF @ 5V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
BYS459F-1500SE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.5KV 10A ITO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 6.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 220ns Current - Reverse Leakage @ Vr: 250µA @ 1500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-2 Full Pack, Isolated Tab	Azione6.992	1500V	10A	1.35V @ 6.5A	Fast Recovery =< 500ns, > 200mA (Io)	220ns	250µA @ 1500V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
GP30MHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-201AD, Axial	Azione5.984	1000V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 1000V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
SD103C-T	Diodes Incorporated	DIODE SCHOTTKY 20V 350MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 350mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 10V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 125°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione5.664	20V	350mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	5µA @ 10V	50pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	125°C (Max)
UFS120JE3/TR13	Microsemi Corporation	DIODE GEN PURP 200V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214BA Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-214AA, SMB	Azione6.160	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214BA	-55°C ~ 175°C
UGB8DTHE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione6.448	200V	8A	1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
MBR8H100MFST3G	ON Semiconductor	DIODE SCHOTTKY 100V 8A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: 8-PowerTDFN, 5 Leads	Azione3.456	100V	8A	900mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 100V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
ES2HR5G	TSC America Inc.	DIODE, SUPER FAST, 2A, 500V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AA, SMB	Azione5.376	500V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS22-M3/52T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 2A 20V DO-214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-214AA, SMB	Azione3.440	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 150°C
SBRT05U20LP-7B	Diodes Incorporated	DIODE SBR X1-DFN1006-2 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 390mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 50µA @ 20V Capacitance @ Vr, F: 14pF @ 20V, 1MHz Mounting Type: Surface Mount Package / Case: 2-UFDFN Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: 2-UFDFN	Azione3.984	20V	500mA	390mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	50µA @ 20V	14pF @ 20V, 1MHz	Surface Mount	2-UFDFN	X1-DFN1006-2	-65°C ~ 150°C
VS-10BQ030-M3/5BT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 200pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AA, SMB	Azione7.392	30V	1A	420mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 5V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES1JLHRUG	TSC America Inc.	DIODE, SUPER FAST, 1A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione3.840	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1PS70SB40,115	Nexperia USA Inc.	DIODE SCHOTTKY 40V 120MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 120mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 40V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3 Operating Temperature - Junction: 150°C (Max)	pacchetto: SC-70, SOT-323	Azione3.568	40V	120mA (DC)	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 40V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323-3	150°C (Max)
S1KLHRTG	TSC America Inc.	DIODE, 1A, 800V, AEC-Q101, SUB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-219AB	Azione7.328	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
1N4006G A0G	TSC America Inc.	DIODE, 1A, 800V, DO-204AL (DO-41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-204AL, DO-41, Axial	Azione2.800	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S5JB R5G	TSC America Inc.	DIODE, 5A, 600V, DO-214AA (SMB) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AA, SMB	Azione3.872	600V	5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
DSR6U600P5-13	Diodes Incorporated	DIODE GEN PURP 600V 6A POWERDI5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.6V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: PowerDI? 5	Azione2.784	600V	6A	2.6V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	50µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	PowerDI? 5	PowerDI? 5	-65°C ~ 175°C
DB2440200L	Panasonic Electronic Components	DIODE SCHOTTKY 40V 2A TMINIP2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 250µA @ 40V Capacitance @ Vr, F: 50pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: TMiniP2-F2-B Operating Temperature - Junction: 150°C (Max)	pacchetto: SOD-128	Azione29.382	40V	2A (DC)	470mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	250µA @ 40V	50pF @ 10V, 1MHz	Surface Mount	SOD-128	TMiniP2-F2-B	150°C (Max)
LSC04065Q8	Diodes Incorporated	DIODE SIL CARB 650V 4A DFN8080 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 170 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: DFN8080 Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Request a Quote	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	-	Surface Mount	4-PowerTSFN	DFN8080	-55°C ~ 175°C
PNE20060EPE-QZ	Nexperia USA Inc.	DIODE GEN PURP 200V 6A CFP15B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: CFP15B Operating Temperature - Junction: 175°C	pacchetto: -	Azione28.941	200 V	6A	940 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 200 V	65pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	CFP15B	175°C
UF806F_T0_00001	Panjit International Inc.	DIODE GEN PURP 600V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione5.271	600 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
HER204G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione9.945	300 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 300 V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
JANS1N5617	Microchip Technology	DIODE GEN PURP 400V 1A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	400 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	-	-	Through Hole	A, Axial	A, Axial	-65°C ~ 200°C
RB521SM-60FHT2R	Rohm Semiconductor	DIODE SCHOTTKY 60V 200MA EMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: EMD2 Operating Temperature - Junction: 125°C (Max)	pacchetto: -	Azione112.140	60 V	200mA	600 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	100 µA @ 60 V	-	Surface Mount	SC-79, SOD-523	EMD2	125°C (Max)

IRD3CH9DF6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione4.816

-

RGP10M-7008E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione4.560

-

GI250-2-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2KV 250MA DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 2000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

Azione5.200

2000V

250mA

3.5V @ 250mA

Fast Recovery =< 500ns, > 200mA (Io)

2µs

5µA @ 2000V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

JANTX1N6622U

Microsemi Corporation

DIODE GEN PURP 600V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SQ-MELF, A

Azione3.216

600V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 600V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

VS-MBRS120TRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: 110pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-214AA, SMB

Azione426.000

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

110pF @ 5V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

BYS459F-1500SE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.5KV 10A ITO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 6.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220ns
Current - Reverse Leakage @ Vr: 250µA @ 1500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2 Full Pack, Isolated Tab

Azione6.992

1500V

10A

1.35V @ 6.5A

Fast Recovery =< 500ns, > 200mA (Io)

220ns

250µA @ 1500V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 150°C

GP30MHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-201AD, Axial

Azione5.984

1000V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 1000V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

SD103C-T

Diodes Incorporated

DIODE SCHOTTKY 20V 350MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 350mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 5µA @ 10V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 125°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione5.664

20V

350mA (DC)

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

10ns

5µA @ 10V

50pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

125°C (Max)

UFS120JE3/TR13

Microsemi Corporation

DIODE GEN PURP 200V 1A DO214BA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-214AA, SMB

Azione6.160

200V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 200V

-

Surface Mount

DO-214AA, SMB

DO-214BA

-55°C ~ 175°C

UGB8DTHE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione6.448

200V

8A

1V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

MBR8H100MFST3G

ON Semiconductor

DIODE SCHOTTKY 100V 8A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: 8-PowerTDFN, 5 Leads

Azione3.456

100V

8A

900mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

2µA @ 100V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 175°C

ES2HR5G

TSC America Inc.

DIODE, SUPER FAST, 2A, 500V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 500V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AA, SMB

Azione5.376

500V

2A

1.7V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 500V

20pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SS22-M3/52T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 2A 20V DO-214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-214AA, SMB

Azione3.440

20V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 20V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 150°C

SBRT05U20LP-7B

Diodes Incorporated

DIODE SBR X1-DFN1006-2

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 390mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 50µA @ 20V
Capacitance @ Vr, F: 14pF @ 20V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-UFDFN
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: 2-UFDFN

Azione3.984

20V

500mA

390mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

6ns

50µA @ 20V

14pF @ 20V, 1MHz

Surface Mount

2-UFDFN

X1-DFN1006-2

-65°C ~ 150°C

VS-10BQ030-M3/5BT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AA, SMB

Azione7.392

30V

1A

420mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

200pF @ 5V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

ES1JLHRUG

TSC America Inc.

DIODE, SUPER FAST, 1A, 600V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione3.840

600V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 600V

8pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

1PS70SB40,115

Nexperia USA Inc.

DIODE SCHOTTKY 40V 120MA SOT323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 120mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 40V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Operating Temperature - Junction: 150°C (Max)

pacchetto: SC-70, SOT-323

Azione3.568

40V

120mA (DC)

1V @ 40mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 40V

5pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323-3

150°C (Max)

S1KLHRTG

TSC America Inc.

DIODE, 1A, 800V, AEC-Q101, SUB S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-219AB

Azione7.328

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 800V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

1N4006G A0G

TSC America Inc.

DIODE, 1A, 800V, DO-204AL (DO-41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-204AL, DO-41, Axial

Azione2.800

800V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

S5JB R5G

TSC America Inc.

DIODE, 5A, 600V, DO-214AA (SMB)

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AA, SMB

Azione3.872

600V

5A

1.1V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 600V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

DSR6U600P5-13

Diodes Incorporated

DIODE GEN PURP 600V 6A POWERDI5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: PowerDI? 5

Azione2.784

600V

6A

2.6V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

50µA @ 600V

30pF @ 4V, 1MHz

Surface Mount

PowerDI? 5

-65°C ~ 175°C

DB2440200L

Panasonic Electronic Components

DIODE SCHOTTKY 40V 2A TMINIP2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 250µA @ 40V
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: TMiniP2-F2-B
Operating Temperature - Junction: 150°C (Max)

pacchetto: SOD-128

Azione29.382

40V

2A (DC)

470mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

15ns

250µA @ 40V

50pF @ 10V, 1MHz

Surface Mount

SOD-128

TMiniP2-F2-B

150°C (Max)

LSC04065Q8

Diodes Incorporated

DIODE SIL CARB 650V 4A DFN8080

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Request a Quote

650 V

4A

1.7 V @ 4 A

No Recovery Time > 500mA (Io)

0 ns

170 µA @ 650 V

-

Surface Mount

4-PowerTSFN

DFN8080

-55°C ~ 175°C

PNE20060EPE-QZ

Nexperia USA Inc.

DIODE GEN PURP 200V 6A CFP15B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C

pacchetto: -

Azione28.941

200 V

6A

940 mV @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

1 µA @ 200 V

65pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

CFP15B

175°C

UF806F_T0_00001

Panjit International Inc.

DIODE GEN PURP 600V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione5.271

600 V

8A

1.7 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

1 µA @ 600 V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 150°C

HER204G

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione9.945

300 V

2A

1 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 300 V

35pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

JANS1N5617

Microchip Technology

DIODE GEN PURP 400V 1A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

400 V

1A

1.6 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

-

Through Hole

A, Axial

-65°C ~ 200°C

RB521SM-60FHT2R

Rohm Semiconductor

DIODE SCHOTTKY 60V 200MA EMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: EMD2
Operating Temperature - Junction: 125°C (Max)

pacchetto: -

Azione112.140

60 V

200mA

600 mV @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

100 µA @ 60 V

-

Surface Mount

SC-79, SOD-523

EMD2

125°C (Max)