Pagina 93 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTX1N6628	Microsemi Corporation	DIODE GEN PURP 660V 1.75A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 660V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: E, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: E, Axial	Azione5.488	660V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 660V	40pF @ 10V, 1MHz	Through Hole	E, Axial	-	-65°C ~ 150°C
R5021413LSWA	Powerex Inc.	DIODE GEN PURP 1.4KV 125A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 700ns Current - Reverse Leakage @ Vr: 45mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: DO-205AA, DO-8, Stud	Azione2.880	1400V	125A	2.5V @ 470A	Standard Recovery >500ns, > 200mA (Io)	700ns	45mA @ 1400V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 150°C
1N5420US	Microsemi Corporation	DIODE GEN PURP 600V 3A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: E-MELF Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: E-MELF	Azione7.312	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	1µA @ 600V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 175°C
HSM120G/TR13	Microsemi Corporation	DIODE SCHOTTKY 1A 20V SMBG Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione6.960	-	-	-	-	-	-	-	-	-	-	-
VIT1080SHM3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 10A 80V TO-262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 80V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA	Azione4.032	80V	10A	810mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 80V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-55°C ~ 150°C
SB2540DCTR	SMC Diode Solutions	DIODE SCHOTTKY 40V 25A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 550mV @ 12.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 500pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 200°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione3.392	40V	25A	550mV @ 12.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	500pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 200°C
SF61GHR0G	TSC America Inc.	DIODE, SUPER FAST, 6A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 975mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-201AD, Axial	Azione4.304	50V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
CMDD4448 BK	Central Semiconductor Corp	DIODE GEN PURP 75V 250MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: SC-76, SOD-323	Azione2.432	75V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 175°C
BYM13-50HE3/97	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-213AB, MELF	Azione6.400	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 150°C
SSL24 M4G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: DO-214AA, SMB	Azione3.008	40V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SS35HM6G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AB, SMC	Azione3.440	50V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
GL34B/1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 500MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-213AA (Glass)	Azione5.376	100V	500mA	1.2V @ 500mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
HS1DL RTG	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 200V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione3.488	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1N4148W-G RHG	TSC America Inc.	DIODE, SWITCHING & ARRAY, 0.15A, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: SOD-123	Azione4.992	100V	150mA	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
HSM8100JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 100V 8A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 780mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-214AB, SMC	Azione3.024	100V	8A	780mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C
VS-3EJH02HM3/6B	Vishay Semiconductor Diodes Division	DIODE HYP FAST 200V 3A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 930mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: 13pF @ 200V Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-221AC, SMA Flat Leads	Azione2.064	200V	3A	930mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 200V	13pF @ 200V	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-65°C ~ 175°C
SD101CW-7-F	Diodes Incorporated	DIODE SCHOTTKY 40V 15MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 15mA (DC) Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 200nA @ 30V Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C	pacchetto: SOD-123	Azione454.320	40V	15mA (DC)	900mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 30V	2.2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
1N250C	Solid State Inc.	DIODE GEN PURP 200V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	200 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
SF2008PTH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione2.700	600 V	20A	1.9 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
1N2160R	Solid State Inc.	DIODE GEN PURP REV 600V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	600 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
CD214B-B3100R	Bourns Inc.	DIODE SCHOTTKY 100V 3A 2SMD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: 180pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	100 V	3A	850 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	180pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2-SMD	-55°C ~ 150°C
D291S45TXPSA1	Infineon Technologies	DIODE GEN PURP 4.5KV 445A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500 V Current - Average Rectified (Io): 445A Voltage - Forward (Vf) (Max) @ If: 4.15 V @ 1200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 4500 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 125°C	pacchetto: -	Request a Quote	4500 V	445A	4.15 V @ 1200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 4500 V	-	Clamp On	DO-200AB, B-PUK	-	-40°C ~ 125°C
ES1GFS	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione19.734	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 400 V	16pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
BD5100YS_L2_00001	Panjit International Inc.	DIODE SCHOTTKY 100V 5A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	100 V	5A	800 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-65°C ~ 175°C
IDT02S60C	Infineon Technologies	DIODE SIL CARB 600V 3A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 15 µA @ 600 V Capacitance @ Vr, F: 60pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Request a Quote	600 V	3A	2.4 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	15 µA @ 600 V	60pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
ABAS16-HF	Comchip Technology	DIODE GEN PURP 75V 150MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	75 V	150mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	1 µA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-55°C ~ 150°C
DZ950N44KHPSA1	Infineon Technologies	DIODE GEN PURP 4.4KV 950A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4400 V Current - Average Rectified (Io): 950A Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 4400 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: -	Azione3	4400 V	950A	1.78 V @ 3000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4400 V	-	Chassis Mount	Module	Module	-40°C ~ 150°C
1N6642UB-TR	Microchip Technology	DIODE GEN PURP UB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	-	5pF @ 0V, 1MHz	Surface Mount	4-SMD, No Lead	UB	-

JANTX1N6628

Microsemi Corporation

DIODE GEN PURP 660V 1.75A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 660V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: E, Axial

Azione5.488

660V

1.75A

1.35V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 660V

40pF @ 10V, 1MHz

Through Hole

E, Axial

-

-65°C ~ 150°C

R5021413LSWA

Powerex Inc.

DIODE GEN PURP 1.4KV 125A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 470A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 700ns
Current - Reverse Leakage @ Vr: 45mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: DO-205AA, DO-8, Stud

Azione2.880

1400V

125A

2.5V @ 470A

Standard Recovery >500ns, > 200mA (Io)

700ns

45mA @ 1400V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-40°C ~ 150°C

1N5420US

Microsemi Corporation

DIODE GEN PURP 600V 3A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: E-MELF

Azione7.312

600V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

400ns

1µA @ 600V

-

Surface Mount

E-MELF

D-5B

-65°C ~ 175°C

HSM120G/TR13

Microsemi Corporation

DIODE SCHOTTKY 1A 20V SMBG

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione6.960

-

VIT1080SHM3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 80V TO-262AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

Azione4.032

80V

10A

810mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

600µA @ 80V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262AA

-55°C ~ 150°C

SB2540DCTR

SMC Diode Solutions

DIODE SCHOTTKY 40V 25A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 12.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 200°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione3.392

40V

25A

550mV @ 12.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

500pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 200°C

SF61GHR0G

TSC America Inc.

DIODE, SUPER FAST, 6A, 50V, 35NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-201AD, Axial

Azione4.304

50V

6A

975mV @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 50V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

CMDD4448 BK

Central Semiconductor Corp

DIODE GEN PURP 75V 250MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: SC-76, SOD-323

Azione2.432

75V

250mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

25nA @ 20V

4pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 175°C

BYM13-50HE3/97

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-213AB, MELF

Azione6.400

50V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

80pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

DO-213AB

-55°C ~ 150°C

SSL24 M4G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: DO-214AA, SMB

Azione3.008

40V

2A

410mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 40V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

SS35HM6G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

Azione3.440

50V

3A

750mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

GL34B/1

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO213

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-213AA (Glass)

Azione5.376

100V

500mA

1.2V @ 500mA

Standard Recovery >500ns, > 200mA (Io)

1.5µs

5µA @ 100V

4pF @ 4V, 1MHz

Surface Mount

DO-213AA (Glass)

DO-213AA (GL34)

-65°C ~ 175°C

HS1DL RTG

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 200V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione3.488

200V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

20pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

1N4148W-G RHG

TSC America Inc.

DIODE, SWITCHING & ARRAY, 0.15A,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SOD-123

Azione4.992

100V

150mA

1.25V @ 150mA

Small Signal =< 200mA (Io), Any Speed

4ns

2.5µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SOD-123

-65°C ~ 150°C

HSM8100JE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 100V 8A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 780mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-214AB, SMC

Azione3.024

100V

8A

780mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 175°C

VS-3EJH02HM3/6B

Vishay Semiconductor Diodes Division

DIODE HYP FAST 200V 3A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: 13pF @ 200V
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-221AC, SMA Flat Leads

Azione2.064

200V

3A

930mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 200V

13pF @ 200V

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-65°C ~ 175°C

SD101CW-7-F

Diodes Incorporated

DIODE SCHOTTKY 40V 15MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 15mA (DC)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 200nA @ 30V
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C

pacchetto: SOD-123

Azione454.320

40V

15mA (DC)

900mV @ 15mA

Small Signal =< 200mA (Io), Any Speed

1ns

200nA @ 30V

2.2pF @ 0V, 1MHz

Surface Mount

SOD-123

-65°C ~ 125°C

1N250C

Solid State Inc.

DIODE GEN PURP 200V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

200 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

SF2008PTH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 20A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione2.700

600 V

20A

1.9 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 600 V

175pF @ 4V, 1MHz

Through Hole

TO-247-3

TO-247AD (TO-3P)

-55°C ~ 150°C

1N2160R

Solid State Inc.

DIODE GEN PURP REV 600V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

600 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 600 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

CD214B-B3100R

Bourns Inc.

DIODE SCHOTTKY 100V 3A 2SMD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

100 V

3A

850 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 100 V

180pF @ 4V, 1MHz

Surface Mount

2-SMD, No Lead

2-SMD

-55°C ~ 150°C

D291S45TXPSA1

Infineon Technologies

DIODE GEN PURP 4.5KV 445A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4500 V
Current - Average Rectified (Io): 445A
Voltage - Forward (Vf) (Max) @ If: 4.15 V @ 1200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 125°C

pacchetto: -

Request a Quote

4500 V

445A

4.15 V @ 1200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 mA @ 4500 V

-

Clamp On

DO-200AB, B-PUK

-

-40°C ~ 125°C

ES1GFS

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SOD128

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione19.734

400 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 400 V

16pF @ 4V, 1MHz

Surface Mount

SOD-128

-55°C ~ 150°C

BD5100YS_L2_00001

Panjit International Inc.

DIODE SCHOTTKY 100V 5A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

100 V

5A

800 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 100 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

-65°C ~ 175°C

IDT02S60C

Infineon Technologies

DIODE SIL CARB 600V 3A TO220-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Request a Quote

600 V

3A

2.4 V @ 3 A

No Recovery Time > 500mA (Io)

0 ns

15 µA @ 600 V

60pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

ABAS16-HF

Comchip Technology

DIODE GEN PURP 75V 150MA SOT23-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

75 V

150mA

1.25 V @ 150 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

1 µA @ 75 V

4pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

-55°C ~ 150°C

DZ950N44KHPSA1

Infineon Technologies

DIODE GEN PURP 4.4KV 950A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4400 V
Current - Average Rectified (Io): 950A
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: -

Azione3

4400 V

950A

1.78 V @ 3000 A

Standard Recovery >500ns, > 200mA (Io)

-

100 mA @ 4400 V

-

Chassis Mount

Module

-40°C ~ 150°C

1N6642UB-TR

Microchip Technology

DIODE GEN PURP UB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

1.2 V @ 100 mA

Fast Recovery =< 500ns, > 200mA (Io)

5 ns

-

5pF @ 0V, 1MHz

Surface Mount

4-SMD, No Lead

UB

-