Pagina 895 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N4458R	Microsemi Corporation	DIODE GEN PURP 800V 15A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-203AA, DO-4, Stud	Azione3.312	800V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
EGP20B-TP	Micro Commercial Co	DIODE GEN PURP 100V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-204AC, DO-15, Axial	Azione3.072	100V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
80EPF04	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 80A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 190ns Current - Reverse Leakage @ Vr: 100µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: TO-247-3	Azione15.636	400V	80A	1.25V @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	190ns	100µA @ 400V	-	Through Hole	TO-247-3	TO-247AC	-65°C ~ 175°C
R6202440XXOO	Powerex Inc.	DIODE MODULE 2.4KV 400A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2400V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 9µs Current - Reverse Leakage @ Vr: 50mA @ 2400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	pacchetto: DO-200AA, A-PUK	Azione3.312	2400V	400A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	9µs	50mA @ 2400V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
VT2045BP-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 20A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 660mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 200°C (Max)	pacchetto: TO-220-2	Azione2.944	45V	20A (DC)	660mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	-	Through Hole	TO-220-2	TO-220AC	200°C (Max)
SRAS8100 MNG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione5.552	100V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
PMEG100V100ELPDZ	Nexperia USA Inc.	DIODE SCHOTTKY 100V 10A CFP15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 135pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: CFP15 Operating Temperature - Junction: 175°C (Max)	pacchetto: 3-SMD, Flat Leads	Azione4.624	100V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	14ns	1µA @ 100V	135pF @ 10V, 1MHz	Surface Mount	3-SMD, Flat Leads	CFP15	175°C (Max)
ES3A R7G	TSC America Inc.	DIODE, SUPER FAST, 3A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AB, SMC	Azione4.272	50V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
B350A-M3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 50V Capacitance @ Vr, F: 145pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione4.368	50V	3A	720mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	145pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RGP10G-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AL, DO-41, Axial	Azione4.816	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
2A05G R0G	TSC America Inc.	DIODE, 2A, 600V, DO-15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-204AC, DO-15, Axial	Azione3.136	600V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
UF4003TA	SMC Diode Solutions	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-204AL, DO-41, Axial	Azione7.104	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
VS-1N3893	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 25µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-203AA, DO-4, Stud	Azione6.992	400V	12A	1.4V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	25µA @ 400V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
JANS1N6621US-TR	Microchip Technology	DIODE GP 400V 1.2A A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Request a Quote	400 V	1.2A	1.6 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	-	-	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 150°C
RFN2VWM2STFTR	Rohm Semiconductor	DIODE GEN PURP 200V 2A PMDE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 175°C	pacchetto: -	Azione17.991	200 V	2A	990 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 200 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	175°C
1N3292RA	Solid State Inc.	DIODE GEN PURP REV 500V 150A DO8 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	500 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 500 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-8	-65°C ~ 200°C
RS2J-HF	Comchip Technology	DIODE GEN PURP 600V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 22pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione4.398	600 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	22pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CD214B-S3J	Bourns Inc.	DIODE GEN PURP 600V 3A 2SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 23pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Azione29.487	600 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	23pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2-SMD	-65°C ~ 175°C
JANTX1N6641US-TR	Microchip Technology	SIGNAL OR COMPUTER DIODE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 100 nA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, D Supplier Device Package: D-5D Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	50 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	100 nA @ 50 V	-	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
SUR8840G	onsemi	RECTIFIER DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BAT54Q-13	Diodes Incorporated	DIODE SCHOTT 30V 200MA SOT23 10K Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Azione24.951	30 V	200mA	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-65°C ~ 150°C
V8PM45HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 45 V Capacitance @ Vr, F: 1450pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	pacchetto: -	Azione19.008	45 V	8A	600 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 45 V	1450pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
S3G-AQ	Diotec Semiconductor	DIODE SMC 400V 3A 150C AECQ101 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -50°C ~ 150°C	pacchetto: -	Request a Quote	400 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 400 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-50°C ~ 150°C
RS2KAH	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione45.000	800 V	1.5A	1.3 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 800 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
NRVBSS34FA	onsemi	DIODE SCHOTTKY 40V 3A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 152pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: -	Azione14.907	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	12 ns	500 µA @ 40 V	152pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 125°C
STPS660CSFY	STMicroelectronics	DIODE SCHOTTKY 60V 3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 19 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	pacchetto: -	Azione8.913	60 V	3A	610 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	19 µA @ 60 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
CMR2U-04-TR13-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 400V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Azione6.255	400 V	2A	1.4 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	28pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
CGRB205-HF	Comchip Technology	DIODE GEN PURP 600V 2A DO214AA S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	600 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C

JAN1N4458R

Microsemi Corporation

DIODE GEN PURP 800V 15A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-203AA, DO-4, Stud

Azione3.312

800V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C

EGP20B-TP

Micro Commercial Co

DIODE GEN PURP 100V 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-204AC, DO-15, Axial

Azione3.072

100V

2A

1V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 100V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

80EPF04

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 80A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190ns
Current - Reverse Leakage @ Vr: 100µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: TO-247-3

Azione15.636

400V

80A

1.25V @ 80A

Fast Recovery =< 500ns, > 200mA (Io)

190ns

100µA @ 400V

-

Through Hole

TO-247-3

TO-247AC

-65°C ~ 175°C

R6202440XXOO

Powerex Inc.

DIODE MODULE 2.4KV 400A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2400V
Current - Average Rectified (Io): 400A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9µs
Current - Reverse Leakage @ Vr: 50mA @ 2400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -

pacchetto: DO-200AA, A-PUK

Azione3.312

2400V

400A

1.5V @ 800A

Standard Recovery >500ns, > 200mA (Io)

9µs

50mA @ 2400V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, R62

-

VT2045BP-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 20A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 660mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 200°C (Max)

pacchetto: TO-220-2

Azione2.944

45V

20A (DC)

660mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 45V

-

Through Hole

TO-220-2

TO-220AC

200°C (Max)

SRAS8100 MNG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione5.552

100V

8A

950mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

PMEG100V100ELPDZ

Nexperia USA Inc.

DIODE SCHOTTKY 100V 10A CFP15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 135pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)

pacchetto: 3-SMD, Flat Leads

Azione4.624

100V

10A

850mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

14ns

1µA @ 100V

135pF @ 10V, 1MHz

Surface Mount

3-SMD, Flat Leads

CFP15

175°C (Max)

ES3A R7G

TSC America Inc.

DIODE, SUPER FAST, 3A, 50V, 35NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

Azione4.272

50V

3A

950mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 50V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

B350A-M3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 50V
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione4.368

50V

3A

720mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 50V

145pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

RGP10G-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

Azione4.816

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

2A05G R0G

TSC America Inc.

DIODE, 2A, 600V, DO-15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-204AC, DO-15, Axial

Azione3.136

600V

2A

1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

UF4003TA

SMC Diode Solutions

DIODE GEN PURP 200V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-204AL, DO-41, Axial

Azione7.104

200V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

VS-1N3893

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 25µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-203AA, DO-4, Stud

Azione6.992

400V

12A

1.4V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

25µA @ 400V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 150°C

JANS1N6621US-TR

Microchip Technology

DIODE GP 400V 1.2A A SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

400 V

1.2A

1.6 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

-

Surface Mount

SQ-MELF, A

A, SQ-MELF

-65°C ~ 150°C

RFN2VWM2STFTR

Rohm Semiconductor

DIODE GEN PURP 200V 2A PMDE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C

pacchetto: -

Azione17.991

200 V

2A

990 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 200 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

175°C

1N3292RA

Solid State Inc.

DIODE GEN PURP REV 500V 150A DO8

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-8
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

500 V

150A

1.1 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 500 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-8

-65°C ~ 200°C

RS2J-HF

Comchip Technology

DIODE GEN PURP 600V 2A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione4.398

600 V

2A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

5 µA @ 600 V

22pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

CD214B-S3J

Bourns Inc.

DIODE GEN PURP 600V 3A 2SMD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 23pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Azione29.487

600 V

3A

1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

23pF @ 4V, 1MHz

Surface Mount

2-SMD, No Lead

2-SMD

-65°C ~ 175°C

JANTX1N6641US-TR

Microchip Technology

SIGNAL OR COMPUTER DIODE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, D
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

50 V

300mA

1.1 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

5 ns

100 nA @ 50 V

-

Surface Mount

SQ-MELF, D

D-5D

-65°C ~ 175°C

SUR8840G

onsemi

RECTIFIER DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

BAT54Q-13

Diodes Incorporated

DIODE SCHOTT 30V 200MA SOT23 10K

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Azione24.951

30 V

200mA

800 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

2 µA @ 25 V

10pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

-65°C ~ 150°C

V8PM45HM3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 8A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Capacitance @ Vr, F: 1450pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C

pacchetto: -

Azione19.008

45 V

8A

600 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 45 V

1450pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 175°C

S3G-AQ

Diotec Semiconductor

DIODE SMC 400V 3A 150C AECQ101

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -50°C ~ 150°C

pacchetto: -

Request a Quote

400 V

3A

1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 400 V

-

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-50°C ~ 150°C

RS2KAH

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1.5A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione45.000

800 V

1.5A

1.3 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 800 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

NRVBSS34FA

onsemi

DIODE SCHOTTKY 40V 3A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: 152pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: -

Azione14.907

40 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

12 ns

500 µA @ 40 V

152pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 125°C

STPS660CSFY

STMicroelectronics

DIODE SCHOTTKY 60V 3A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 19 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C

pacchetto: -

Azione8.913

60 V

3A

610 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

19 µA @ 60 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 175°C

CMR2U-04-TR13-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 400V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Azione6.255

400 V

2A

1.4 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 400 V

28pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

CGRB205-HF

Comchip Technology

DIODE GEN PURP 600V 2A DO214AA S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB/DO-214AA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

600 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

10pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB/DO-214AA

-55°C ~ 150°C