Pagina 880 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
R9G20211ASOO	Powerex Inc.	DIODE FAST REC R9G 1100A 200V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione7.552	-	-	-	-	-	-	-	-	-	-	-
BYD33KGP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AL, DO-41, Axial	Azione5.680	800V	1A	1.3V @ 1A	Standard Recovery >500ns, > 200mA (Io)	300ns	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
S2KW4C-1N	Semtech Corporation	DIODE GEN PURP 4KV 8A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 4V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 2µA @ 4000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: Module	Azione4.752	4000V	8A	4V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	2µs	2µA @ 4000V	-	Chassis Mount	Module	-	-55°C ~ 150°C
MBR6080	GeneSiC Semiconductor	DIODE SCHOTTKY 80V 60A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-203AB, DO-5, Stud	Azione4.224	80V	60A	840mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 20V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
LSM840J/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 8A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 520mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AB, SMC	Azione6.128	40V	8A	520mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 150°C
MBR2045FCTE3/TU	Microsemi Corporation	DIODE SCHOTTKY 20A 45V ITO220AB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione3.392	-	-	-	-	-	-	-	-	-	-	-
B0540W RHG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 510mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 40V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: SOD-123	Azione3.168	40V	500mA	510mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 40V	170pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
PMEG3005EB,115	Nexperia USA Inc.	DIODE SCHOTTKY 30V 500MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 30pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: 150°C (Max)	pacchetto: SC-79, SOD-523	Azione2.912	30V	500mA (DC)	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	30pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	150°C (Max)
VSKY20401608-G4-08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 2A CLP1608-2L Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 580mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 40V Capacitance @ Vr, F: 340pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: CLP1608-2L Operating Temperature - Junction: 125°C (Max)	pacchetto: 0603 (1608 Metric)	Azione37.560	40V	2A	580mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 40V	340pF @ 0V, 1MHz	Surface Mount	0603 (1608 Metric)	CLP1608-2L	125°C (Max)
GB01SLT12-220	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 1A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 2µA @ 1200V Capacitance @ Vr, F: 69pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-220-2	Azione17.592	1200V	1A	1.8V @ 1A	No Recovery Time > 500mA (Io)	0ns	2µA @ 1200V	69pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
CDSQR4148	Comchip Technology	DIODE GEN PURP 75V 150MA 0402 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1005 Metric) Supplier Device Package: 0402/SOD-923F Operating Temperature - Junction: 125°C (Max)	pacchetto: 0402 (1005 Metric)	Azione587.220	75V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	0402 (1005 Metric)	0402/SOD-923F	125°C (Max)
PSDB3060S1_T0_00001	Panjit International Inc.	DIODE GEN PURP 600V 30A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Current - Reverse Leakage @ Vr: 250 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione6.000	600 V	30A	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	250 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263	-55°C ~ 150°C
MBR10200_T0_00001	Panjit International Inc.	DIODE SCHOTTKY 200V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Azione2.391	200 V	10A	900 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 200 V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
DTH810FP	Diodes Incorporated	DIODE GEN PURP 1KV 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC (Type WX) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione135	1000 V	8A	2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	5 µA @ 1000 V	40pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC (Type WX)	-55°C ~ 150°C
MER802FT_T0_00601	Panjit International Inc.	DIODE GEN PURP 200V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Azione6.000	200 V	8A	950 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	80pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 175°C
PCDD08120G1_L2_00001	Panjit International Inc.	DIODE SIL CARB 1.2KV 8A TO252AA Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 60 µA @ 1200 V Capacitance @ Vr, F: 418pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Azione8.637	1200 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	418pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
JANTXV1N6873UTK2-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
V2N103HM3-H	Vishay	2A, 100V, DFN3820A TRENCH SKY RE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 100 V Capacitance @ Vr, F: 260pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: -	Request a Quote	100 V	2A	670 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 100 V	260pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 150°C
CRH02-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 500MA S-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max)	pacchetto: -	Azione6.372	200 V	500mA	950 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
1N4148WS-H3F-B	Toshiba Semiconductor and Storage	100 V/0.25 A SWITCHING DIODE, SO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 200 nA @ 80 V Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 150°C	pacchetto: -	Azione8.979	100 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	3 ns	200 nA @ 80 V	0.5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	150°C
FFSH1665A	onsemi	DIODE SIL CARB 650V 23A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 23A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: 887pF @ 1V, 100kHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione483	650 V	23A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	887pF @ 1V, 100kHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 150°C
JANTX1N5188-TR	Microchip Technology	DIODE GEN PURP 400V 3A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 2 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	2 µA @ 400 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
1N1612R	Microchip Technology	DIODE GEN PURP 50V 7A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 7A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	50 V	7A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
VS-1EAH02-M3-H	Vishay General Semiconductor - Diodes Division	1A, 200V, FRED HYPERFAST RECTIFI Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 23 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Azione11.142	200 V	1A	970 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	23 ns	1 µA @ 200 V	-	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-55°C ~ 175°C
R5010210XXWA	Powerex Inc.	DIODE GP REV 200V 100A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7 µs Current - Reverse Leakage @ Vr: 30 mA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	200 V	100A	-	Standard Recovery >500ns, > 200mA (Io)	7 µs	30 mA @ 200 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
CMSD4448-BK-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 75V 250MA SOT323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 25 nA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	75 V	250mA	1 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	25 nA @ 20 V	-	Surface Mount	SC-70, SOT-323	SOT-323	-65°C ~ 175°C
F1200B	Diotec Semiconductor	DIODE FAST P600 100V 200NS 150C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	pacchetto: -	Request a Quote	100 V	12A	910 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 100 V	-	Through Hole	P600, Axial	P600	-50°C ~ 150°C
JANTXV1N4249-TR	Microchip Technology	DIODE GEN PURP 1KV 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 1 µA @ 1 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 1 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C

R9G20211ASOO

Powerex Inc.

DIODE FAST REC R9G 1100A 200V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione7.552

-

BYD33KGP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

Azione5.680

800V

1A

1.3V @ 1A

Standard Recovery >500ns, > 200mA (Io)

300ns

5µA @ 800V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

S2KW4C-1N

Semtech Corporation

DIODE GEN PURP 4KV 8A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 4V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 2µA @ 4000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: Module

Azione4.752

4000V

8A

4V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

2µs

2µA @ 4000V

-

Chassis Mount

Module

-

-55°C ~ 150°C

MBR6080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 60A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-203AB, DO-5, Stud

Azione4.224

80V

60A

840mV @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 20V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

LSM840J/TR13

Microsemi Corporation

DIODE SCHOTTKY 40V 8A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

Azione6.128

40V

8A

520mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 40V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 150°C

MBR2045FCTE3/TU

Microsemi Corporation

DIODE SCHOTTKY 20A 45V ITO220AB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione3.392

-

B0540W RHG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 510mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 40V
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: SOD-123

Azione3.168

40V

500mA

510mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

20µA @ 40V

170pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 125°C

PMEG3005EB,115

Nexperia USA Inc.

DIODE SCHOTTKY 30V 500MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)

pacchetto: SC-79, SOD-523

Azione2.912

30V

500mA (DC)

500mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

30pF @ 1V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

150°C (Max)

VSKY20401608-G4-08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A CLP1608-2L

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 40V
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Supplier Device Package: CLP1608-2L
Operating Temperature - Junction: 125°C (Max)

pacchetto: 0603 (1608 Metric)

Azione37.560

40V

2A

580mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 40V

340pF @ 0V, 1MHz

Surface Mount

0603 (1608 Metric)

CLP1608-2L

125°C (Max)

GB01SLT12-220

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 1A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 2µA @ 1200V
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-220-2

Azione17.592

1200V

1A

1.8V @ 1A

No Recovery Time > 500mA (Io)

0ns

2µA @ 1200V

69pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

CDSQR4148

Comchip Technology

DIODE GEN PURP 75V 150MA 0402

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1005 Metric)
Supplier Device Package: 0402/SOD-923F
Operating Temperature - Junction: 125°C (Max)

pacchetto: 0402 (1005 Metric)

Azione587.220

75V

150mA

1V @ 50mA

Small Signal =< 200mA (Io), Any Speed

4ns

2.5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

0402 (1005 Metric)

0402/SOD-923F

125°C (Max)

PSDB3060S1_T0_00001

Panjit International Inc.

DIODE GEN PURP 600V 30A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione6.000

600 V

30A

2.3 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

70 ns

250 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263

-55°C ~ 150°C

MBR10200_T0_00001

Panjit International Inc.

DIODE SCHOTTKY 200V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Azione2.391

200 V

10A

900 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 200 V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

DTH810FP

Diodes Incorporated

DIODE GEN PURP 1KV 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione135

1000 V

8A

2 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

85 ns

5 µA @ 1000 V

40pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC (Type WX)

-55°C ~ 150°C

MER802FT_T0_00601

Panjit International Inc.

DIODE GEN PURP 200V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Azione6.000

200 V

8A

950 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 200 V

80pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 175°C

PCDD08120G1_L2_00001

Panjit International Inc.

DIODE SIL CARB 1.2KV 8A TO252AA

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Capacitance @ Vr, F: 418pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Azione8.637

1200 V

8A

1.7 V @ 8 A

No Recovery Time > 500mA (Io)

0 ns

60 µA @ 1200 V

418pF @ 1V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

JANTXV1N6873UTK2-TR

Microchip Technology

POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

V2N103HM3-H

Vishay

2A, 100V, DFN3820A TRENCH SKY RE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Capacitance @ Vr, F: 260pF @ 4V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: -

Request a Quote

100 V

2A

670 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 100 V

260pF @ 4V, 1MHz

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-40°C ~ 150°C

CRH02-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 500MA S-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)

pacchetto: -

Azione6.372

200 V

500mA

950 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

-

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

150°C (Max)

1N4148WS-H3F-B

Toshiba Semiconductor and Storage

100 V/0.25 A SWITCHING DIODE, SO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 150°C

pacchetto: -

Azione8.979

100 V

250mA

1.25 V @ 150 mA

Fast Recovery =< 500ns, > 200mA (Io)

3 ns

200 nA @ 80 V

0.5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

150°C

FFSH1665A

onsemi

DIODE SIL CARB 650V 23A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 23A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Capacitance @ Vr, F: 887pF @ 1V, 100kHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione483

650 V

23A

-

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 650 V

887pF @ 1V, 100kHz

Through Hole

TO-247-2

-55°C ~ 150°C

JANTX1N5188-TR

Microchip Technology

DIODE GEN PURP 400V 3A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

400 V

3A

1.5 V @ 9 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

2 µA @ 400 V

-

Through Hole

B, Axial

-65°C ~ 175°C

1N1612R

Microchip Technology

DIODE GEN PURP 50V 7A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 7A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

50 V

7A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 50 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C

VS-1EAH02-M3-H

Vishay General Semiconductor - Diodes Division

1A, 200V, FRED HYPERFAST RECTIFI

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Azione11.142

200 V

1A

970 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

23 ns

1 µA @ 200 V

-

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-55°C ~ 175°C

R5010210XXWA

Powerex Inc.

DIODE GP REV 200V 100A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7 µs
Current - Reverse Leakage @ Vr: 30 mA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

200 V

100A

-

Standard Recovery >500ns, > 200mA (Io)

7 µs

30 mA @ 200 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

CMSD4448-BK-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 75V 250MA SOT323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

75 V

250mA

1 V @ 100 mA

Fast Recovery =< 500ns, > 200mA (Io)

4 ns

25 nA @ 20 V

-

Surface Mount

SC-70, SOT-323

SOT-323

-65°C ~ 175°C

F1200B

Diotec Semiconductor

DIODE FAST P600 100V 200NS 150C

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

pacchetto: -

Request a Quote

100 V

12A

910 mV @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

5 µA @ 100 V

-

Through Hole

P600, Axial

P600

-50°C ~ 150°C

JANTXV1N4249-TR

Microchip Technology

DIODE GEN PURP 1KV 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

1000 V

1A

1.3 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

5 µs

1 µA @ 1 V

-

Through Hole

A, Axial

-65°C ~ 175°C