Pagina 871 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CLS01(T6LSONY,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 530pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	pacchetto: L-FLAT?	Azione3.360	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
5819SMG/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 1A DO215AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AA, SMB Gull Wing Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-215AA, SMB Gull Wing	Azione2.832	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Surface Mount	DO-215AA, SMB Gull Wing	DO-215AA	-55°C ~ 150°C
SS13HE3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 125°C	pacchetto: DO-214AC, SMA	Azione4.208	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 125°C
RGP30GHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-201AD, Axial	Azione4.192	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
1N4937GPHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AL, DO-41, Axial	Azione3.632	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
NRVB1035G	ON Semiconductor	DIODE SCHOTTKY 35V 10A TO220-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: TO-220-2	Azione4.784	35V	10A	840mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
1N4002RL	ON Semiconductor	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AL, DO-41, Axial	Azione6.704	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
301UR80	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 330A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 330A Voltage - Forward (Vf) (Max) @ If: 1.22V @ 942A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	pacchetto: DO-205AB, DO-9, Stud	Azione7.936	800V	330A	1.22V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 800V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
SFF501GHC0G	TSC America Inc.	DIODE, SUPER FAST, 5A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 980mV @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-3 Full Pack, Isolated Tab	Azione2.464	50V	5A	980mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SS215L MTG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione6.672	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
CDBER40-HF	Comchip Technology	DIODE SCHOTTKY 40V 200MA 0503 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 200nA @ 30V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0503 (1308 Metric) Supplier Device Package: 0503/SOD-723F Operating Temperature - Junction: 125°C (Max)	pacchetto: 0503 (1308 Metric)	Azione4.896	40V	200mA	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	5ns	200nA @ 30V	5pF @ 0V, 1MHz	Surface Mount	0503 (1308 Metric)	0503/SOD-723F	125°C (Max)
IMBD4148-E3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 70V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C (Max)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione6.896	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 70V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C (Max)
VS-8EWX06FN-M3	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 600V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 17ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione29.520	600V	8A	3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	17ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-65°C ~ 175°C
JANTXV1N5822	Microchip Technology	DIODE SCHOTTKY 40V 3A B AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 125°C	pacchetto: -	Request a Quote	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 125°C
RF201L2SDDTE25	Rohm Semiconductor	DIODE GEN PURP 200V 2A PMDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 870 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	pacchetto: -	Azione3.693	200 V	2A	870 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 200 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
WNSC401200CWQ	WeEn Semiconductors	DIODE SIL CARB 1.2KV 40A TO247-3 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Capacitance @ Vr, F: 810pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max)	pacchetto: -	Request a Quote	1200 V	40A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	810pF @ 1V, 1MHz	Through Hole	TO-247-3	TO-247-3	175°C (Max)
R25140	Microchip Technology	RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1400 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	1400 V	25A	1.1 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1400 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
B540CX-13	Diodes Incorporated	SCHOTTKY RECTIFIER SMC T&R 3K Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione8.910	40 V	5A	520 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 40 V	-	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
S2580	Microchip Technology	DIODE GEN PURP 800V 25A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	800 V	25A	1.1 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 200°C
HSM123-92TR-E	Renesas Electronics Corporation	DIODE FOR HIGH SPEED SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
GS1AE-TP	Micro Commercial Co	DIODE GEN PURP 50V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	50 V	1A	-	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 50 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
FFSB0865A	onsemi	DIODE SIC 650V 15.4A D2PAK-3 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 15.4A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: 463pF @ 1V, 100kHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Azione2.400	650 V	15.4A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	463pF @ 1V, 100kHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)	-55°C ~ 175°C
RS1PDHM3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	200 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	9pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
JAN1N3612-TR	Microchip Technology	DIODE GEN PURP 400V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 300 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
1N1615R	Microchip Technology	STANDARD RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	400 V	15A	1.5 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 400 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
S42160F	Microchip Technology	RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	1600 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1600 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
CMHD457A-BK	Central Semiconductor Corp	DIODE GEN PURP 70V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 nA @ 70 V Capacitance @ Vr, F: 6pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Request a Quote	70 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 70 V	6pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
UF1008_T0_00001	Panjit International Inc.	DIODE GEN PURP 800V 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	800 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 800 V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C

CLS01(T6LSONY,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: 530pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

pacchetto: L-FLAT?

Azione3.360

30V

10A (DC)

0.47V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

530pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

5819SMG/TR13

Microsemi Corporation

DIODE SCHOTTKY 40V 1A DO215AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-215AA, SMB Gull Wing

Azione2.832

40V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

-

Surface Mount

DO-215AA, SMB Gull Wing

DO-215AA

-55°C ~ 150°C

SS13HE3/5AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C

pacchetto: DO-214AC, SMA

Azione4.208

30V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 125°C

RGP30GHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-201AD, Axial

Azione4.192

400V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

1N4937GPHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

Azione3.632

600V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

NRVB1035G

ON Semiconductor

DIODE SCHOTTKY 35V 10A TO220-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: TO-220-2

Azione4.784

35V

10A

840mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 35V

-

Through Hole

TO-220-2

-65°C ~ 175°C

1N4002RL

ON Semiconductor

DIODE GEN PURP 100V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

Azione6.704

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

301UR80

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 330A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 330A
Voltage - Forward (Vf) (Max) @ If: 1.22V @ 942A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -40°C ~ 180°C

pacchetto: DO-205AB, DO-9, Stud

Azione7.936

800V

330A

1.22V @ 942A

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 800V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-40°C ~ 180°C

SFF501GHC0G

TSC America Inc.

DIODE, SUPER FAST, 5A, 50V, 35NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 2.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-3 Full Pack, Isolated Tab

Azione2.464

50V

5A

980mV @ 2.5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 50V

70pF @ 4V, 1MHz

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

SS215L MTG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione6.672

150V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

CDBER40-HF

Comchip Technology

DIODE SCHOTTKY 40V 200MA 0503

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 200nA @ 30V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0503 (1308 Metric)
Supplier Device Package: 0503/SOD-723F
Operating Temperature - Junction: 125°C (Max)

pacchetto: 0503 (1308 Metric)

Azione4.896

40V

200mA

1V @ 40mA

Small Signal =< 200mA (Io), Any Speed

5ns

200nA @ 30V

5pF @ 0V, 1MHz

Surface Mount

0503 (1308 Metric)

0503/SOD-723F

125°C (Max)

IMBD4148-E3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 70V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C (Max)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione6.896

75V

150mA

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

2.5µA @ 70V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

150°C (Max)

VS-8EWX06FN-M3

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 600V 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione29.520

600V

8A

3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

17ns

50µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252, (D-Pak)

-65°C ~ 175°C

JANTXV1N5822

Microchip Technology

DIODE SCHOTTKY 40V 3A B AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C

pacchetto: -

Request a Quote

40 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

-

Through Hole

B, Axial

-65°C ~ 125°C

RF201L2SDDTE25

Rohm Semiconductor

DIODE GEN PURP 200V 2A PMDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

pacchetto: -

Azione3.693

200 V

2A

870 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

10 µA @ 200 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

WNSC401200CWQ

WeEn Semiconductors

DIODE SIL CARB 1.2KV 40A TO247-3

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Capacitance @ Vr, F: 810pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)

pacchetto: -

Request a Quote

1200 V

40A

1.75 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 1200 V

810pF @ 1V, 1MHz

Through Hole

TO-247-3

175°C (Max)

R25140

Microchip Technology

RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1400 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

1400 V

25A

1.1 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1400 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C

B540CX-13

Diodes Incorporated

SCHOTTKY RECTIFIER SMC T&R 3K

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione8.910

40 V

5A

520 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 40 V

-

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

S2580

Microchip Technology

DIODE GEN PURP 800V 25A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

800 V

25A

1.1 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 800 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 200°C

HSM123-92TR-E

Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

GS1AE-TP

Micro Commercial Co

DIODE GEN PURP 50V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

50 V

1A

-

Standard Recovery >500ns, > 200mA (Io)

2 µs

5 µA @ 50 V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

FFSB0865A

onsemi

DIODE SIC 650V 15.4A D2PAK-3

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 15.4A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Capacitance @ Vr, F: 463pF @ 1V, 100kHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Azione2.400

650 V

15.4A

1.75 V @ 8 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 650 V

463pF @ 1V, 100kHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263 (D2PAK)

-55°C ~ 175°C

RS1PDHM3_A-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

200 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

1 µA @ 200 V

9pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

JAN1N3612-TR

Microchip Technology

DIODE GEN PURP 400V 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

400 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

100 µA @ 300 V

-

Through Hole

A, Axial

-65°C ~ 175°C

1N1615R

Microchip Technology

STANDARD RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

400 V

15A

1.5 V @ 15 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 400 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C

S42160F

Microchip Technology

RECTIFIER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

1600 V

125A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 1600 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

CMHD457A-BK

Central Semiconductor Corp

DIODE GEN PURP 70V 200MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 70 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

70 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

25 nA @ 70 V

6pF @ 0V, 1MHz

Surface Mount

SOD-123

-65°C ~ 150°C

UF1008_T0_00001

Panjit International Inc.

DIODE GEN PURP 800V 10A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

800 V

10A

1.7 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

1 µA @ 800 V

50pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C