Pagina 787 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  787/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GP10WE-M3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Azione7.600
-
-
-
-
-
-
-
-
-
-
-
FGP50CHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-201AA, DO-27, Axial
Azione4.960
150V
5A
950mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
MDO1200-22N1
IXYS

DIODE MODULE 2.2KV Y1-CU

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
  • Supplier Device Package: Y1-CU
  • Operating Temperature - Junction: -
pacchetto: Y1-CU
Azione7.792
2200V
-
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis Mount
Y1-CU
Y1-CU
-
CSD10030A
Cree/Wolfspeed

DIODE SCHOTTKY 300V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 300V
  • Capacitance @ Vr, F: 660pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione7.632
300V
10A
1.4V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 300V
660pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
VS-100BGQ030
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 100A POWIRTAB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.4mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: PowerTab?, PowIRtab?
  • Supplier Device Package: PowIRtab?
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: PowerTab?, PowIRtab?
Azione5.904
30V
100A
580mV @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.4mA @ 30V
-
Through Hole
PowerTab?, PowIRtab?
PowIRtab?
-55°C ~ 150°C
D2201N45T
Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE DISC 4500V 3240A

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Azione2.400
-
-
-
-
-
-
-
-
-
-
-
VS-VSKE250-16PBF
Vishay Semiconductor Diodes Division

DIODE GEN 1.6KV 250A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 250A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: MAGN-A-PAK (3)
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: MAGN-A-PAK (3)
Azione7.680
1600V
250A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 1600V
-
Chassis Mount
MAGN-A-PAK (3)
MAGN-A-PAK?
-40°C ~ 150°C
VS-SD603C14S15C
Vishay Semiconductor Diodes Division

DIODE MODULE 1.4KV 600A B-43

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 600A
  • Voltage - Forward (Vf) (Max) @ If: 2.97V @ 1885A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 45mA @ 1400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: B-43, PUK
  • Supplier Device Package: B-43, Hockey PUK
  • Operating Temperature - Junction: -
pacchetto: B-43, PUK
Azione2.304
1400V
600A
2.97V @ 1885A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
45mA @ 1400V
-
Stud Mount
B-43, PUK
B-43, Hockey PUK
-
1N3290
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 100A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 24mA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 200°C
pacchetto: DO-205AA, DO-8, Stud
Azione3.200
300V
100A
1.5V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
24mA @ 300V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 200°C
FR40JR05
GeneSiC Semiconductor

DIODE GEN PURP REV 600V 40A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 25µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -40°C ~ 125°C
pacchetto: DO-203AB, DO-5, Stud
Azione6.720
600V
40A
1.4V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
25µA @ 100V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-40°C ~ 125°C
SMAJ5819E3/TR13
Microsemi Corporation

DIODE SCHOTTKY 1A 40V SMAJ

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Azione3.904
-
-
-
-
-
-
-
-
-
-
-
FR85GR02
GeneSiC Semiconductor

DIODE GEN PURP REV 400V 85A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 25µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -40°C ~ 125°C
pacchetto: DO-203AB, DO-5, Stud
Azione7.920
400V
85A
1.4V @ 85A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
25µA @ 100V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-40°C ~ 125°C
hot SMMDL914T1G
ON Semiconductor

DIODE GEN PURP 100V 200MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 5µA @ 75V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: SC-76, SOD-323
Azione2.160.000
100V
200mA (DC)
1V @ 10mA
Small Signal =< 200mA (Io), Any Speed
4ns
5µA @ 75V
4pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 150°C
RB751V40,115
Nexperia USA Inc.

DIODE SCHOTTKY 40V 120MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 30V
  • Capacitance @ Vr, F: 2pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-76, SOD-323
Azione104.088
40V
120mA (DC)
370mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
-
500nA @ 30V
2pF @ 1V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C (Max)
SFS1008G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 10A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione4.800
600 V
10A
1.7 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 600 V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
SD103BM3
Taiwan Semiconductor Corporation

0.35A, 30V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 350mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 20 V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Request a Quote
30 V
350mA
600 mV @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
5 µA @ 20 V
50pF @ 0V, 1MHz
Surface Mount
SC-90, SOD-323F
SOD-323F
-55°C ~ 125°C
S1MHM3_A-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione69.000
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
1.8 µs
5 µA @ 1000 V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
JANTX1N6858-1-TR
Microchip Technology

DIODE SCHOTTKY 50V 75MA DO35

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 75mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 nA @ 50 V
  • Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-204AH (DO-35)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
50 V
75mA
1 V @ 35 mA
Small Signal =< 200mA (Io), Any Speed
-
200 nA @ 50 V
4.5pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
-65°C ~ 150°C
MURS460C-13-F
Diodes Incorporated

DIODE GEN PURP 600V 4A SMC TR 3K

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
600 V
4A
1.28 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 600 V
40pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-55°C ~ 150°C
FFSH15120A
onsemi

DIODE SIL CARB 1.2KV 26A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 26A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: 936pF @ 1V, 100kHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione903
1200 V
26A
1.75 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 1200 V
936pF @ 1V, 100kHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
PMEG3015EJ-QX
Nexperia USA Inc.

PMEG3015EJ-Q/SOD323F/SOD323F

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 30 V
  • Capacitance @ Vr, F: 60pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
  • Operating Temperature - Junction: 150°C
pacchetto: -
Request a Quote
30 V
1.5A
550 mV @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 30 V
60pF @ 1V, 1MHz
Surface Mount
SC-90, SOD-323F
SOD-323F
150°C
R53150
Microchip Technology

STD RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
TPMR6JH
Taiwan Semiconductor Corporation

40NS, 6A, 600V, SUPER FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
600 V
6A
1 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
10 µA @ 600 V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
TST20U45CW
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 45V 10A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione24
45 V
10A
510 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 45 V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
VS-MURB820TRR-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
200 V
8A
975 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 200 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-65°C ~ 175°C
NTE519
NTE Electronics, Inc

DIODE GEN PURP 100V 150MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 8 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 75 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 200°C (Max)
pacchetto: -
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100 V
150mA
1 V @ 10 mA
Small Signal =< 200mA (Io), Any Speed
8 ns
5 µA @ 75 V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
200°C (Max)
JAN1N6912UTK2
Microchip Technology

DIODE GEN PURP 45V 25A THINKEY2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 640 mV @ 25 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
  • Capacitance @ Vr, F: 1000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
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45 V
25A
640 mV @ 25 A
No Recovery Time > 500mA (Io)
-
1.2 mA @ 45 V
1000pF @ 5V, 1MHz
Surface Mount
ThinKey™2
ThinKey™2
-65°C ~ 150°C
VS-15TQ060STRRHM3
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 15A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800 µA @ 60 V
  • Capacitance @ Vr, F: 720pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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60 V
15A
620 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
800 µA @ 60 V
720pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C