Pagina 761 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  761/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
MBRH20045RL
GeneSiC Semiconductor

DIODE MODULE 45V 200A D-67

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: D-67
Azione5.600
45V
200A
600mV @ 200A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 45V
-
Chassis Mount
D-67
D-67
-55°C ~ 150°C
A197PD
Powerex Inc.

DIODE GEN PURP 1.4KV 250A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 250A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DO-205AB, DO-9, Stud
Azione4.960
1400V
250A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
-
-40°C ~ 150°C
VS-95PFR80W
Vishay Semiconductor Diodes Division

DIODE STD RECOVERY 95A DO-5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 95A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 267A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -55°C ~ 180°C
pacchetto: DO-203AB, DO-5, Stud
Azione6.640
800V
95A
1.4V @ 267A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-55°C ~ 180°C
VS-8ETL06STRRPBF
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 8A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione4.272
600V
8A
2.4V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-65°C ~ 175°C
SBL10L25HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 25V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 25V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 460mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 25V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: TO-220-2
Azione5.152
25V
10A
460mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 25V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
SRAF5100HC0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-2 Full Pack
Azione7.760
100V
5A
850mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
GPA803 C0G
TSC America Inc.

DIODE, 8A, 200V, TO-220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-2
Azione4.288
200V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
hot BYT53D-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.9A SOD57

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.9A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-57, Axial
  • Supplier Device Package: SOD-57
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: SOD-57, Axial
Azione600.000
200V
1.9A
1.1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
-
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
MUR305S M6G
TSC America Inc.

DIODE, ULTRA FAST, 3A, 50V, 25NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-214AB, SMC
Azione3.024
50V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 175°C
EGL34GHE3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 500MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-213AA (Glass)
Azione5.680
400V
500mA
1.35V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
-
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
hot SBYV26C-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione290.400
600V
1A
2.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 600V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
EGP10B-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 22pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione3.232
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
22pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
RFNL5TJ6SGC9
Rohm Semiconductor

DIODE GEN PURP 600V 5A TO220ACFP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 130ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220ACFP
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-220-2
Azione19.728
600V
5A
1.3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
130ns
10µA @ 600V
-
Through Hole
TO-220-2
TO-220ACFP
150°C (Max)
CMR1U-04FL TR13
Central Semiconductor Corp

DIODE GEN PURP 400V 1A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione5.904
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
1µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
RB168LAM-30TR
Rohm Semiconductor

DIODE SCHOTTKY 30V 1A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600nA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SOD-128
Azione3.584
30V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
600nA @ 30V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
VS-60APF10-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 60A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 480ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-247-3
Azione8.052
1000V
60A
1.4V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
480ns
100µA @ 1000V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VT4045BP-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 40A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 40A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 670mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 200°C (Max)
pacchetto: TO-220-2
Azione15.648
45V
40A (DC)
670mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 45V
-
Through Hole
TO-220-2
TO-220AC
200°C (Max)
CMSH2-100 TR13
Central Semiconductor Corp

DIODE SCHOTTKY 100V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: 120pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione57.216
100V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
120pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
70HF30
Solid State Inc.

DIODE GEN PURP 300V 70A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
300 V
70A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-
MBR730-BP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 400pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
30 V
7.5A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
400pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
1N5615US-TR
Microchip Technology

DIODE GEN PURP 200V 1A D-5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 200 V
  • Capacitance @ Vr, F: 45pF @ 12V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
200 V
1A
1.6 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
500 nA @ 200 V
45pF @ 12V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
CMR1-02-BK-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 200V 1A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
200 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 200 V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
BAT54W-AQ
Diotec Semiconductor

IC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 3 µA @ 30 V
  • Capacitance @ Vr, F: 10pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
30 V
200mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
3 µA @ 30 V
10pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
-55°C ~ 150°C
JANTX1N6941UTK3
Microchip Technology

DIODE SCHOTTKY 30V 150A THINKEY3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 30 V
  • Capacitance @ Vr, F: 7500pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™3
  • Supplier Device Package: ThinKey™3
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
30 V
150A
500 mV @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 mA @ 30 V
7500pF @ 5V, 1MHz
Surface Mount
ThinKey™3
ThinKey™3
-65°C ~ 150°C
FR157-AP
Micro Commercial Co

DIODE GEN PURP 1KV 1.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
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1000 V
1.5A
1.3 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 1000 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
WNSC2D0512006Q
WeEn Semiconductors

DIODE SIL CARB 1.2KV 5A TO220AC

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
  • Capacitance @ Vr, F: 260pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
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1200 V
5A
1.6 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
25 µA @ 1200 V
260pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
SR002H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 500MA DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 125°C
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20 V
500mA
550 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 20 V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
VS-20TQ035STRLHM3
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 35V 20A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V
  • Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
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35 V
20A
570 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.7 mA @ 35 V
1400pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C