Pagina 70 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  70/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IDV05S60CXKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 5A TO220-2FP

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 70µA @ 600V
  • Capacitance @ Vr, F: 240pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: PG-TO220-2 Full Pack
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2 Full Pack
Azione7.808
600V
5A (DC)
1.7V @ 5A
No Recovery Time > 500mA (Io)
0ns
70µA @ 600V
240pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
SK33BE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 30V 3A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-214AA, SMB
Azione7.328
30V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 125°C
VS-SD1100C20C
Vishay Semiconductor Diodes Division

DIODE MODULE 2KV 1400A B-43

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): 1400A
  • Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 35mA @ 2000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: B-43, PUK
  • Supplier Device Package: B-43, Hockey PUK
  • Operating Temperature - Junction: -
pacchetto: B-43, PUK
Azione4.704
2000V
1400A
1.31V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
-
35mA @ 2000V
-
Stud Mount
B-43, PUK
B-43, Hockey PUK
-
JANTXV1N5807
Microsemi Corporation

DIODE GEN PURP 50V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 65pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: B, Axial
Azione5.536
50V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 50V
65pF @ 10V, 1MHz
Through Hole
B, Axial
-
-65°C ~ 175°C
FESB16BTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 16A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 175pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione4.672
100V
16A
975mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
175pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
VS-ETX1506S-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 3.4V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 36µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.216
600V
15A
3.4V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
36µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 175°C
FESB8BTHE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.120
100V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
hot S3M-E3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione54.108
1000V
3A
1.15V @ 2.5A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
10µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
CFRMT105-HF
Comchip Technology

DIODE GEN PURP 600V 1A SOD123H

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123H
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: SOD-123H
Azione2.528
600V
1A (DC)
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 600V
15pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123H
-55°C ~ 150°C
S2A-M3/5BT
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 50V DO-214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 50V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione7.408
50V
1.5A
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 50V
16pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS26L M2G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 6

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione2.432
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
1N6625US
Microsemi Corporation

DIODE GEN PURP 1.1KV 1A A-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 1µA @ 1100V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A-MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: SQ-MELF, A
Azione5.456
1100V
1A
1.75V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
1µA @ 1100V
10pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
A-MELF
-65°C ~ 150°C
CMSH3-20M TR13
Central Semiconductor Corp

DIODE SCHOTTKY 20V 3A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: 280pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione5.408
20V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
280pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
2A06G-T
Diodes Incorporated

DIODE GEN PURP 800V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AC, DO-15, Axial
Azione4.112
800V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
40pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-65°C ~ 175°C
C4D15120A
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Capacitance @ Vr, F: 1200pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione6.324
1200V
10A (DC)
1.8V @ 15A
No Recovery Time > 500mA (Io)
0ns
200µA @ 1200V
1200pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
S1Y
S1Y
SMC Diode Solutions

2000V,1A, SMA, STANDARD RECTIFIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
  • Capacitance @ Vr, F: 14pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione212.082
2000 V
1A
1.2 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 2000 V
14pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C
RL251M-AP
Micro Commercial Co

DIODE GEN PURP 50V 2.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
50 V
2.5A
1 V @ 2.5 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 50 V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
CSB-1136
Microchip Technology

SMALL-SIGNAL SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
PMEG100T50ELPX
Nexperia USA Inc.

DIODE SCHOTT 100V 5A SOD128/CFP5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 895 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 12.5 ns
  • Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V
  • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128/CFP5
  • Operating Temperature - Junction: 175°C
pacchetto: -
Azione18.000
100 V
5A
895 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
12.5 ns
1.75 µA @ 100 V
300pF @ 1V, 1MHz
Surface Mount
SOD-128
SOD-128/CFP5
175°C
SS0530_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 30V 500MA SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 15 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Azione273.900
30 V
500mA
430 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 15 V
-
Surface Mount
SOD-123
SOD-123
-55°C ~ 125°C
MSASC75W45F
Microchip Technology

DIODE SCHOTTKY 45V 75A THINKEY4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 760 mV @ 75 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 750 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™4
  • Supplier Device Package: ThinKey™4
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
45 V
75A
760 mV @ 75 A
Fast Recovery =< 500ns, > 200mA (Io)
-
750 µA @ 45 V
-
Surface Mount
ThinKey™4
ThinKey™4
-65°C ~ 175°C
STR20100YD_L2_00001
Panjit International Inc.

100V ,SCHOTTKY,TO-252AA,20A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Capacitance @ Vr, F: 820pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione17.979
100 V
20A
810 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 100 V
820pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 150°C
PMEG60T20ELRX
Nexperia USA Inc.

DIODE SCHOTTKY 60V 2A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 12 ns
  • Current - Reverse Leakage @ Vr: 1.2 µA @ 60 V
  • Capacitance @ Vr, F: 370pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: -
Azione98.952
60 V
2A
620 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
12 ns
1.2 µA @ 60 V
370pF @ 1V, 1MHz
Surface Mount
SOD-123W
SOD-123W
175°C (Max)
V15PM6-M3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 15A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
  • Capacitance @ Vr, F: 2300pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
Azione12.639
60 V
15A
640 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.2 mA @ 60 V
2300pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
MMBD4148-TP-HF
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 25 nA @ 20 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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75 V
150mA
855 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
25 nA @ 20 V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 150°C
HER154GH
Taiwan Semiconductor Corporation

50NS, 1.5A, 300V, HIGH EFFICIENT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione10.500
300 V
1.5A
1 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 300 V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
ES15DLW-RVG
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1.5A SOD123W

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 24pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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200 V
1.5A
950 mV @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 200 V
24pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 150°C
RFUH10TF6SFHC9
Rohm Semiconductor

DIODE GEN PURP 600V 10A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: -
Azione1.278
600 V
10A
2.8 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
10 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220NFM
150°C (Max)