Pagina 682 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 805
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  682/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
CLLRH-02 BK
Central Semiconductor Corp

DIODE GP 200V 500MA SOD80

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 500mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200nA @ 200V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-213AC, MINI-MELF, SOD-80
Azione5.456
200V
500mA
1.1V @ 500mA
Standard Recovery >500ns, > 200mA (Io)
-
200nA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80
-65°C ~ 175°C
RGP10JEHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione2.208
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
hot MUR120RL
ON Semiconductor

DIODE GEN PURP 200V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione60.060
200V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
B350A-13
Diodes Incorporated

DIODE SCHOTTKY 50V 3A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione3.456
50V
3A
700mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
200pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 150°C
hot B530C-13
Diodes Incorporated

DIODE SCHOTTKY 30V 5A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: 300pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione21.564
30V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
300pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-55°C ~ 150°C
VS-SD303C12S15C
Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 350A D200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 350A
  • Voltage - Forward (Vf) (Max) @ If: 2.26V @ 1100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 35mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, PUK
  • Operating Temperature - Junction: -
pacchetto: DO-200AA, A-PUK
Azione2.080
1200V
350A
2.26V @ 1100A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
35mA @ 1200V
-
Chassis Mount
DO-200AA, A-PUK
DO-200AA, PUK
-
F15
F15
Semtech Corporation

DIODE GEN PURP 1.5KV 350MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500V
  • Current - Average Rectified (Io): 350mA
  • Voltage - Forward (Vf) (Max) @ If: 5V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 250nA @ 1500V
  • Capacitance @ Vr, F: 2.5pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: Axial
Azione3.984
1500V
350mA
5V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
250nA @ 1500V
2.5pF @ 5V, 1MHz
Through Hole
Axial
Axial
-65°C ~ 175°C
hot BYV28-100-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 3.5A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: SOD-64, Axial
Azione24.000
100V
3.5A
1.1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 100V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
APD360VPL-E1
Diodes Incorporated

DIODE SCHOTTKY 60V 3A DO27

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 680mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-27
  • Operating Temperature - Junction: -50°C ~ 125°C
pacchetto: DO-201AA, DO-27, Axial
Azione4.032
60V
3A
680mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
DO-201AA, DO-27, Axial
DO-27
-50°C ~ 125°C
BYG23T-M3/TR3
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1300V 1A DO214AC

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1300V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1300V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione2.288
1300V
1A (DC)
1.9V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1300V
9pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS3M R7G
TSC America Inc.

DIODE, FAST, 3A, 1000V, 500NS, D

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione2.560
-
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
10µA @ 1000V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
RS3JHM6G
TSC America Inc.

DIODE, FAST, 3A, 600V, 250NS, AE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione2.912
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
hot SS3P5-M3/84A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 780mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 50V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-220AA
Azione324.240
50V
3A
780mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
80pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
ES1JHM2G
TSC America Inc.

DIODE, SUPER FAST, 1A, 600V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione3.344
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
16pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS110LHRHG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione3.680
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
hot SE15PJ-M3/84A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 900ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-220AA
Azione144.000
600V
1.5A
1.05V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
900ns
5µA @ 600V
9.5pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
hot US1JHE3_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione50.400
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
JANTXV1N6658
Microchip Technology

DIODE GEN PURP 150V 15A TO254

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 150 V
  • Capacitance @ Vr, F: 150pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
150 V
15A
1.2 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 150 V
150pF @ 10V, 1MHz
Through Hole
TO-254-3, TO-254AA
TO-254
-
1N3070UR
Microchip Technology

DIODE GP 200V 100MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 175 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
200 V
100mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
50 ns
100 nA @ 175 V
-
Surface Mount
DO-213AA
DO-213AA
-
RL205-AP
Micro Commercial Co

DIODE GEN PURP 600V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
600 V
2A
1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 600 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
FR1002-AP
Micro Commercial Co

DIODE GEN PURP 100V 10A R-6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
100 V
10A
1.3 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
10 µA @ 100 V
-
Through Hole
R-6, Axial
R-6
-55°C ~ 150°C
DR756-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: -
Request a Quote
600 V
6A
1.1 V @ 6 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 600 V
100pF @ 4V, 1MHz
Through Hole
R-6, Axial
R-6
-50°C ~ 150°C
S6D06065A
SMC Diode Solutions

DIODE SCHOTTKY SILICON CARBIDE S

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 3 µA @ 650 V
  • Capacitance @ Vr, F: 559pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
650 V
25A
1.5 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
3 µA @ 650 V
559pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
BAT43X-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: 125°C
pacchetto: -
Request a Quote
30 V
200mA
1 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
500 nA @ 25 V
10pF @ 1V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
125°C
CMR3-02-TR13-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 200V 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Azione17.592
200 V
3A
1.2 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 200 V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C
SK520C-V7G
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 5A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
200 V
5A
950 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 200 V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ST6020
Microchip Technology

DIODE GEN PURP 200V 20A TO204AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
200 V
20A
1 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 200 V
-
Through Hole
TO-204AA, TO-3
TO-204AA (TO-3)
-65°C ~ 175°C
HS2FA
Surge

DIODE GEN PURP 300V 1.5A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
300 V
1.5A
1 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 300 V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C