Pagina 52 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  52/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SIDC06D120F6
Infineon Technologies

DIODE GEN PURP 1.2KV 5A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: Die
Azione3.280
1200V
5A (DC)
2.1V @ 5A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
CDBA120SL-HF
Comchip Technology

DIODE SCHOTTKY 20V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 330mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: 160pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -50°C ~ 100°C
pacchetto: DO-214AC, SMA
Azione2.144
20V
1A (DC)
330mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
160pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-50°C ~ 100°C
VS-SD1500C16L
Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 1600A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 1600A
  • Voltage - Forward (Vf) (Max) @ If: 1.64V @ 3000A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
pacchetto: DO-200AB, B-PUK
Azione5.952
1600V
1600A
1.64V @ 3000A
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 1600V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
UFS540G/TR13
Microsemi Corporation

DIODE GEN PURP 400V 5A DO215AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: DO-215AB
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-215AB, SMC Gull Wing
Azione7.424
400V
5A
1.2V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Surface Mount
DO-215AB, SMC Gull Wing
DO-215AB
-55°C ~ 175°C
SFAF805G C0G
TSC America Inc.

DIODE, SUPER FAST, 8A, 300V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 300V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-2 Full Pack
Azione7.488
300V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
60pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HER307GT-G
Comchip Technology

DIODE GEN PURP 800V 3A DO201AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-27
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-201AA, DO-27, Axial
Azione6.368
800V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
-
Through Hole
DO-201AA, DO-27, Axial
DO-27
-55°C ~ 150°C
SS115LHRTG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione4.560
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 150V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
BAT54LP-7B
Diodes Incorporated

DIODE SCHOTTKY 30V 200MA 2DFN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-UFDFN
  • Supplier Device Package: X1-DFN1006-2
  • Operating Temperature - Junction: -65°C ~ 125°C
pacchetto: 2-UFDFN
Azione3.952
30V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
2-UFDFN
X1-DFN1006-2
-65°C ~ 125°C
CDSUR400B
Comchip Technology

DIODE GEN PURP 80V 100MA 0603

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 80V
  • Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 0603/SOD-523F
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: 2-SMD, No Lead
Azione6.528
80V
100mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 80V
3pF @ 0.5V, 1MHz
Surface Mount
2-SMD, No Lead
0603/SOD-523F
125°C (Max)
1SS413CT,L3F
Toshiba Semiconductor and Storage

DIODE SW SCHOTT 20V 50MA CST2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 50mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 20V
  • Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: SOD-882
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: SOD-882
Azione5.120
20V
50mA
550mV @ 50mA
Small Signal =< 200mA (Io), Any Speed
-
500nA @ 20V
3.9pF @ 0V, 1MHz
Surface Mount
SOD-882
SOD-882
-55°C ~ 125°C
hot SS36-E3/57T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione1.464.084
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
PMEG4010EH,115
Nexperia USA Inc.

DIODE SCHOTTKY 40V 1A SOD123F

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 640mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Capacitance @ Vr, F: 50pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SOD-123F
Azione3.776
40V
1A (DC)
640mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
50pF @ 1V, 1MHz
Surface Mount
SOD-123F
SOD-123F
150°C (Max)
DB2J31600L
Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA SMINI2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 800ps
  • Current - Reverse Leakage @ Vr: 15µA @ 30V
  • Capacitance @ Vr, F: 2pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SMini2-F5-B
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: SC-90, SOD-323F
Azione265.848
30V
100mA
550mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
800ps
15µA @ 30V
2pF @ 10V, 1MHz
Surface Mount
SC-90, SOD-323F
SMini2-F5-B
125°C (Max)
JANS1N5419US
Microchip Technology

DIODE GEN PURP 500V 3A B SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
500 V
3A
1.5 V @ 9 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
-
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
RB068MM100TR
Rohm Semiconductor

DIODE SCHOTTKY 100V 2A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 870 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 nA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: -
Azione179.925
100 V
2A
870 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
400 nA @ 100 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
JANTX1N3913
Microchip Technology

DIODE GEN PURP 400V 30A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
400 V
30A
1.4 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-65°C ~ 150°C
ES1JHL-TP
Micro Commercial Co

RECTIFIERS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HL
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
600 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
8pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123HL
-55°C ~ 150°C
EGF1DHE3_A-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO214BA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 200 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214BA
  • Supplier Device Package: DO-214BA (GF1)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
200 V
1A
1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
2 µA @ 200 V
15pF @ 4V, 1MHz
Surface Mount
DO-214BA
DO-214BA (GF1)
-65°C ~ 175°C
TRS10A65F-S1Q
Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 10A TO220F

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 36pF @ 650V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: -
Request a Quote
650 V
10A
1.6 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
36pF @ 650V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220F-2L
175°C (Max)
VS-45EPS16L-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.6KV 45A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 45 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Azione4.182
1600 V
45A
1.16 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 1600 V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
RKR0303AKJ-R6
Renesas Electronics Corporation

DIODE SCHOTTKY 30V 300MA 2UFP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 420 mV @ 300 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: 2-UFP
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: -
Request a Quote
30 V
300mA
420 mV @ 300 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 30 V
-
Surface Mount
SC-79, SOD-523
2-UFP
125°C (Max)
TUAS6KH
Taiwan Semiconductor Corporation

6A, 800V, STANDARD RECOVERY RECT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 39pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: SMPC4.6U
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione18.000
800 V
6A
1.1 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 µA @ 800 V
39pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
SMPC4.6U
-55°C ~ 150°C
1N1348B
Microchip Technology

DIODE GEN PURP 600V 6A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: -
Request a Quote
600 V
6A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 200°C
YQ3MM10BTR
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 3A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 175°C
pacchetto: -
Azione9.000
100 V
3A
770 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
15 µA @ 100 V
60pF @ 4V, 1MHz
Surface Mount
SOD-123F
PMDU
175°C
CDBQR0240LR-HF
Comchip Technology

DIODE SCHOTTKY 40V 200MA 0402C

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 40 V
  • Capacitance @ Vr, F: 25pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0402 (1006 Metric)
  • Supplier Device Package: 0402C/SOD-923F
  • Operating Temperature - Junction: -40°C ~ 125°C
pacchetto: -
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40 V
200mA
580 mV @ 200 mA
Small Signal =< 200mA (Io), Any Speed
-
5 µA @ 40 V
25pF @ 1V, 1MHz
Surface Mount
0402 (1006 Metric)
0402C/SOD-923F
-40°C ~ 125°C
S8JS-E3-I
Vishay General Semiconductor - Diodes Division

8A, 600V, STD RECT , SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
  • Speed: Standard Recovery > 500ns, > 2A (Io)
  • Reverse Recovery Time (trr): 3.4 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 63pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione21.000
600 V
8A
985 mV @ 8 A
Standard Recovery > 500ns, > 2A (Io)
3.4 µs
10 µA @ 600 V
63pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SMBV1094LT1
onsemi

SS SOT23 TUNE DIO SPCL TR

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
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-
-
-
-
-
-
-
-
-
-
-
JANS1N6643
Microchip Technology

DIODE GEN PURP 50V 300MA D-5D

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 150 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, D
  • Supplier Device Package: D-5D
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
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50 V
300mA
1.2 V @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
6 ns
500 nA @ 150 V
5pF @ 0V, 1MHz
Surface Mount
SQ-MELF, D
D-5D
-65°C ~ 175°C