Pagina 497 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  497/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
BA157GPHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione5.504
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
1N4005GL-T
Diodes Incorporated

DIODE GEN PURP 600V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione7.248
600V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 600V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
hot FFPF04U40STU
Fairchild/ON Semiconductor

DIODE GEN PURP 400V 4A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: TO-220-2 Full Pack
Azione4.880
400V
4A
1.4V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
10µA @ 400V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-65°C ~ 150°C
MA2Z00100L
Panasonic Electronic Components

DIODE GEN PURP 200V 100MA SMINI2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SMini2-F1
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-90, SOD-323F
Azione6.096
200V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
60ns
1µA @ 200V
3pF @ 0V, 1MHz
Surface Mount
SC-90, SOD-323F
SMini2-F1
150°C (Max)
60EPF04
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 60A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 180ns
  • Current - Reverse Leakage @ Vr: 100µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-247-2
Azione5.248
400V
60A
1.3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
100µA @ 400V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
hot B560C-13
Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: 300pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione600.264
60V
5A
700mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
300pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-55°C ~ 150°C
VS-VSKE270-16PBF
Vishay Semiconductor Diodes Division

DIODE GEN 1.6KV 270A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 270A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: MAGN-A-PAK (3)
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: MAGN-A-PAK (3)
Azione3.504
1600V
270A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 1600V
-
Chassis Mount
MAGN-A-PAK (3)
MAGN-A-PAK?
-40°C ~ 150°C
VS-307U160
Vishay Semiconductor Diodes Division

DIODE GP 1.6KV 330A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 330A
  • Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -40°C ~ 180°C
pacchetto: DO-205AB, DO-9, Stud
Azione3.488
1600V
330A
1.46V @ 942A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-40°C ~ 180°C
S3M-M3/9AT
Vishay Semiconductor Diodes Division

DIODE GPP 3A 1000V DO-214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione6.624
1000V
3A
1.15V @ 2.5A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
10µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
1N4006FFG
ON Semiconductor

DIODE GEN PURP 800V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione2.032
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
1N4150TAP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 150MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AH, DO-35, Axial
Azione3.392
50V
150mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 50V
2.5pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
MBR150RLG
ON Semiconductor

DIODE SCHOTTKY 50V 1A AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione4.160
50V
1A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 150°C
VS-HFA08PB60-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-247-2
Azione9.612
600V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
5µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 150°C
GP2D005A170B
Global Power Technologies Group

DIODE SCHOTTKY 1700V 5A TO247-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1700V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1700V
  • Capacitance @ Vr, F: 406pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione10.824
1700V
5A (DC)
1.75V @ 5A
No Recovery Time > 500mA (Io)
0ns
10µA @ 1700V
406pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
RB078BM10SFHHTL
Rohm Semiconductor

100V 5A, TO-252, ULTRA LOW IR SB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6.4 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: 175°C
pacchetto: -
Azione7.500
100 V
5A
740 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
6.4 µA @ 100 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
175°C
46DN06B02ELEMPRXPSA1
Infineon Technologies

DIODE GP 600V 7740A D-ELEM-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 7740A
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 6000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: BG-D-ELEM-1
  • Operating Temperature - Junction: 180°C (Max)
pacchetto: -
Request a Quote
600 V
7740A
980 mV @ 6000 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 600 V
-
Clamp On
DO-200AA, A-PUK
BG-D-ELEM-1
180°C (Max)
VS-90APS16L-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.6KV 90A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 90 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Azione1.470
1600 V
90A
1.21 V @ 90 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 1600 V
-
Through Hole
TO-247-3
TO-247AD
-40°C ~ 150°C
V3FM15-M3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 3A DO219AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 85 µA @ 150 V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
Request a Quote
150 V
3A
1.24 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
85 µA @ 150 V
150pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-40°C ~ 175°C
A114C
Harris Corporation

DIODE 300V 1A

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 µs
  • Current - Reverse Leakage @ Vr: 2 µA @ 300 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
300 V
1A
1.3 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
150 µs
2 µA @ 300 V
10pF @ 4V, 1MHz
Through Hole
-
-
-65°C ~ 175°C
HSM83-90TL
Renesas Electronics Corporation

DIODE FOR HIGH VOLTAGE SWITCHING

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
CDLL6857-TR
Microchip Technology

DIODE SCHOTTKY 20V 150MA DO213AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 nA @ 16 V
  • Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
20 V
150mA
750 mV @ 35 mA
Small Signal =< 200mA (Io), Any Speed
-
150 nA @ 16 V
4.5pF @ 0V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 150°C
MSASC25W45K-TR
Microchip Technology

DIODE SCHOTTKY 45V 25A THINKEY2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 775 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
45 V
25A
775 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 45 V
-
Surface Mount
ThinKey™2
ThinKey™2
-55°C ~ 175°C
12TQ080S
SMC Diode Solutions

DIODE SCHOTTKY 80V 15A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550 µA @ 80 V
  • Capacitance @ Vr, F: 500pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
80 V
15A
840 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
550 µA @ 80 V
500pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
BAT54GW-RHG
Taiwan Semiconductor Corporation

0.1A, 30V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Azione8.622
30 V
100mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
10pF @ 1V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 125°C
FR601GP-TP
Micro Commercial Co

DIODE GEN PURP 50V 6A R-6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
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50 V
6A
1.3 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
10 µA @ 50 V
150pF @ 4V, 1MHz
Through Hole
R-6, Axial
R-6
-55°C ~ 150°C
S3BBHE3-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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100 V
3A
1.15 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 100 V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
JAN1N3650
Microchip Technology

DIODE GEN PURP DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 3.3A
  • Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -
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1000 V
3.3A
2.2 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1000 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-
CTLSH3-30M833-TR
Central Semiconductor Corp

DIODE SCHOTTKY 30V 3A TLM833

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: TLM833
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
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30 V
3A
450 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 30 V
-
Surface Mount
8-VDFN Exposed Pad
TLM833
-65°C ~ 150°C