Pagina 487 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  487/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
VS-80SQ030TR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 8A DO204AR

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 30V
  • Capacitance @ Vr, F: 900pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: DO-204AR
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-204AR, Axial
Azione6.928
30V
8A
530mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 30V
900pF @ 5V, 1MHz
Through Hole
DO-204AR, Axial
DO-204AR
-55°C ~ 175°C
hot S1GHE3/5AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione2.670.000
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
1µA @ 400V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RB420D-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 100MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 10V
  • Capacitance @ Vr, F: 6pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.400
40V
100mA
450mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
1µA @ 10V
6pF @ 10V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
125°C (Max)
hot 60EPU02
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 60A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.08V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 50µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione94.032
200V
60A
1.08V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
50µA @ 200V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 175°C
UGF5HTHE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 5A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 30µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-2 Full Pack, Isolated Tab
Azione2.016
500V
5A
1.75V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
30µA @ 500V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-55°C ~ 150°C
SBR3U40P1Q-7
Diodes Incorporated

DIODE SBR 40V 3A POWERDI123

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: POWERDI?123
  • Supplier Device Package: PowerDI? 123
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: POWERDI?123
Azione6.240
40V
3A
500mV @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
POWERDI?123
PowerDI? 123
-65°C ~ 150°C
SS36LHRVG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 6

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione2.560
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1ALHRUG
TSC America Inc.

DIODE, SUPER FAST, 1A, 50V, 35NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione3.536
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1JL MHG
TSC America Inc.

DIODE, FAST, 0.8A, 600V, 250NS,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione4.240
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
BAV19W-E3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 250MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 100V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SOD-123
Azione7.856
100V
250mA (DC)
1.25V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 100V
1.5pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
150°C (Max)
RS1JL R3G
TSC America Inc.

DIODE, FAST, 0.8A, 600V, 250NS,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione7.696
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
hot SS12P2L-M3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 12A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: 930pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-277, 3-PowerDFN
Azione2.821.200
20V
12A
560mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
930pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
SCS220AJTLL
Rohm Semiconductor

DIODE SCHOTTKY 650V 20A TO263AB

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 400µA @ 600V
  • Capacitance @ Vr, F: 730pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.904
650V
20A
1.55V @ 20A
No Recovery Time > 500mA (Io)
0ns
400µA @ 600V
730pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
175°C (Max)
STTH30R04WY
STMicroelectronics

DIODE GEN PURP 400V 30A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 15µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: DO-247-2 (Straight Leads)
Azione15.624
400V
30A
1.55V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
15µA @ 400V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
1N5807
Microsemi Corporation

DIODE GEN PURP 50V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: B, Axial
Azione6.108
50V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 50V
60pF @ 10V, 1MHz
Through Hole
B, Axial
-
-65°C ~ 175°C
VS-80APF02-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 80A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 190ns
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-247-3
Azione8.940
200V
80A
1.25V @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
190ns
100µA @ 200V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
1N5711E3-TR
Microchip Technology

DIODE SCHOTTKY 70V 33MA DO35

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io): 33mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 nA @ 50 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
70 V
33mA
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
-
200 nA @ 50 V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 150°C
RS1GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione45.000
400 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 400 V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
S1GLR2G
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SUB SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
400 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
1.8 µs
5 µA @ 400 V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
SS520FSH
Taiwan Semiconductor Corporation

5A, 200V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
200 V
5A
950 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 200 V
100pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
SE10DLG-M3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 3.6A TO263AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3.6A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 280 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione11.694
400 V
3.6A
1 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
280 ns
5 µA @ 400 V
70pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), Variant
TO-263AC (SMPD)
-55°C ~ 175°C
SDM1A30CSP-7
Diodes Incorporated

DIODE SCHOTT 30V 1A X3-WLB1006-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 525 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-XDFN
  • Supplier Device Package: X3-WLB1006-2
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
30 V
1A
525 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
40pF @ 4V, 1MHz
Surface Mount
2-XDFN
X3-WLB1006-2
-55°C ~ 150°C
BY880-1200
Diotec Semiconductor

IC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -50°C ~ 175°C
pacchetto: -
Request a Quote
1200 V
8A
1.1 V @ 8 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
5 µA @ 1200 V
-
Through Hole
Axial
Axial
-50°C ~ 175°C
MER1002T_T0_00601
Panjit International Inc.

DIODE GEN PURP 200V 10A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione5.988
200 V
10A
950 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 200 V
100pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
JANTXV1N5194-TR
Microchip Technology

DIODE GEN PURP 70V DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 80 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-204AH (DO-35)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
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70 V
-
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
1 µA @ 80 V
-
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
-65°C ~ 175°C
1N1398R
Solid State Inc.

DIODE GEN PURP REV 150V 100A DO8

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-8
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: -
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150 V
100A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 150 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-8
-65°C ~ 200°C
1N6638U-TR
Microchip Technology

DIODE GEN PURP 125V 300MA D-5B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 125 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4.5 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 150 V
  • Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, E
  • Supplier Device Package: D-5B
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
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125 V
300mA
1.1 V @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
4.5 ns
500 nA @ 150 V
2.5pF @ 0V, 1MHz
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 175°C
ES3BSMB
Diotec Semiconductor

IC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: -
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100 V
3A
900 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
5 µA @ 100 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-50°C ~ 150°C