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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  483/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
NUR460/L04,112
NXP

DIODE GEN PURP 600V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: DO-201AD, Axial
Azione4.368
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
50µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
150°C (Max)
GP30GEHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-201AD, Axial
Azione2.496
400V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
5µs
5µA @ 400V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
ESH1PDHE3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-220AA
Azione2.528
200V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
BY520-16EHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 500MA DO204

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione6.480
1600V
500mA
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
FFPF10H60STU
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 10A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 1mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: TO-220-2 Full Pack
Azione4.912
600V
10A
2.5V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
1mA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-65°C ~ 150°C
MURA205T3
ON Semiconductor

DIODE GEN PURP 50V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 940mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-214AC, SMA
Azione3.824
50V
2A
940mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 50V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
VI20150SHM3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 150V TO-262AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.43V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262AA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione6.400
150V
20A
1.43V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 150V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262AA
-55°C ~ 150°C
AR3PMHM3_A/I
Vishay Semiconductor Diodes Division

DIODE AVALANCH 1KV 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 120ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 34pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione2.704
1000V
1.6A
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
10µA @ 800V
34pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SF44G B0G
TSC America Inc.

DIODE, SUPER FAST, 4A, 200V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-201AD, Axial
Azione2.464
200V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
S10G-TP
Micro Commercial Co

DIODE GEN PURP 400V 10A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione2.448
400V
10A
1.2V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
SS22HE3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione2.912
20V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 20V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
BYG20DHM3_A/H
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A SMA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione7.200
200V
1.5A
1.4V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 200V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
CD214B-B260LF
Bourns Inc.

DIODE SCHOTTKY 60V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-214AA, SMB
Azione6.416
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
200pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
SK110BHR5G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione5.168
100V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SD103CW-HE3-18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 350MA 20V SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 350mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 5µA @ 10V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: SOD-123
Azione4.288
20V
350mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
5µA @ 10V
50pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 125°C
CSA2J-E3/I
Vishay Semiconductor Diodes Division

DIODE GPP 2A 600V DO-214AC SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.1µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 11pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione6.592
600V
1.6A
1.15V @ 2A
Standard Recovery >500ns, > 200mA (Io)
2.1µs
5µA @ 600V
11pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
hot RURG80100
Fairchild/ON Semiconductor

DIODE GEN PURP 1KV 80A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-247-2
Azione5.488
1000V
80A
1.9V @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
250µA @ 1000V
-
Through Hole
TO-247-2
TO-247-2
-65°C ~ 175°C
hot UF4004-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione168.000
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
hot ES1C-13-F
Diodes Incorporated

DIODE GEN PURP 150V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione1.236.420
150V
1A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 150°C
UF5400GP-TP
Micro Commercial Co

DIODE GEN PURP 50V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: 75pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
50 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 50 V
75pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR307G
Taiwan Semiconductor Corporation

DIODE GEN PURP 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione11.244
1000 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 1000 V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
UES2604HR2
Microchip Technology

DIODE GEN PURP 30A TO3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
-
30A
1.25 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
-
-
Through Hole
TO-204AA, TO-3
TO-3
-55°C ~ 150°C
DSC06C065FP
Diodes Incorporated

SILICON CARBIDE RECTIFIER ITO-22

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 170 µA @ 650 V
  • Capacitance @ Vr, F: 191pF @ 100mV, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC (Type WX)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione150
650 V
6A
1.7 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
170 µA @ 650 V
191pF @ 100mV, 1MHz
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC (Type WX)
-55°C ~ 175°C
DMA30IM1600PZ-TRL
IXYS

DIODE GEN PURP 1.6KV 30A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
1600 V
30A
1.29 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1600 V
10pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
NRTS1260PFST3G
onsemi

DIODE SCHOTTKY 60V 12A TO277-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 350 µA @ 60 V
  • Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277-3
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione14.970
60 V
12A
660 mV @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
350 µA @ 60 V
1180pf @ 1V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277-3
-55°C ~ 175°C
SR509
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 90 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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90 V
5A
850 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 90 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
NTE597
NTE Electronics, Inc

DIODE GEN PURP 200V 8A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 500 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
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200 V
8A
1.3 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
500 µA @ 200 V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
M1494NK250
IXYS

DIODE GEN PURP 2.5KV 1975A WD8

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500 V
  • Current - Average Rectified (Io): 1975A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.9 µs
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: WD8
  • Operating Temperature - Junction: -
pacchetto: -
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2500 V
1975A
1.15 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
3.9 µs
-
-
Clamp On
DO-200AB, B-PUK
WD8
-