Pagina 476 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  476/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
R9G20612CSOO
Powerex Inc.

DIODE MODULE 600V 1200A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1200A
  • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4µs
  • Current - Reverse Leakage @ Vr: 75mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
pacchetto: DO-200AB, B-PUK
Azione3.056
600V
1200A
2.3V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
4µs
75mA @ 600V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
hot MUR4100E
ON Semiconductor

DIODE GEN PURP 1KV 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 25µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-201AA, DO-27, Axial
Azione5.792
1000V
4A
1.85V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
25µA @ 1000V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
R7011604XXUA
Powerex Inc.

DIODE GEN PURP 1.6KV 450A DO200

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 450A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 11µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-200AA, A-PUK
Azione7.056
1600V
450A
1.6V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
11µs
50mA @ 1600V
-
Chassis, Stud Mount
DO-200AA, A-PUK
DO-200AA, R62
-65°C ~ 175°C
MUR2560R
GeneSiC Semiconductor

DIODE GEN PURP REV 600V 25A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 25A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 90ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-203AA, DO-4, Stud
Azione5.296
600V
25A
1.7V @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
90ns
10µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-55°C ~ 150°C
SFAF2001GHC0G
TSC America Inc.

DIODE, SUPER FAST, 20A, 50V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 170pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-2 Full Pack
Azione5.824
50V
20A
975mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
170pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HSM380JE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 80V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-214AB, SMC
Azione5.424
80V
3A
810mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 80V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
VS-1EMH01HM3/5AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15.2ns
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-214AC, SMA
Azione7.552
100V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
15.2ns
2µA @ 100V
-
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 175°C
S2J-M3/52T
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 600V DO-214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione2.100
600V
1.5A
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 600V
16pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
GP10J-4005-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -
pacchetto: DO-204AL, DO-41, Axial
Azione4.896
600V
1A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-
ES1FL MQG
TSC America Inc.

DIODE, SUPER FAST, 1A, 300V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 8pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione2.144
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SD101AW-HE3-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 400MW 60V SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 30mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 200nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: SOD-123
Azione3.296
60V
30mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 125°C
1N4154TAP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 25V 150MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 25V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 25V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AH, DO-35, Axial
Azione6.752
25V
150mA
1V @ 30mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 25V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
FR305GP-TP
Micro Commercial Co

DIODE FAST 3A 600V DO-201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 50pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 155°C
pacchetto: DO-201AD, Axial
Azione16.116
600V
3A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
250ns
5µA @ 600V
50pF @ 5V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 155°C
RB520S-30DP-TP
Micro Commercial Co

DIODE SCHOTTKY 30V 100MA 0201

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: 0201
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: 0201 (0603 Metric)
Azione621.132
30V
100mA
850mV @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
-
20µA @ 30V
-
Surface Mount
0201 (0603 Metric)
0201
125°C (Max)
SK13-LTP
Micro Commercial Co

DIODE SCHOTTKY 30V 1A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-214AA, SMB
Azione223.548
30V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
hot MSS1P2L-M3/89A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A MICROSMP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: MicroSMP
  • Supplier Device Package: MicroSMP
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: MicroSMP
Azione1.494.360
20V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 20V
-
Surface Mount
MicroSMP
MicroSMP
-55°C ~ 150°C
15MQ060NTR
SMC Diode Solutions

DIODE SCHOTTKY 60V 2.1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2.1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 60V
  • Capacitance @ Vr, F: 250pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-214AC, SMA
Azione348.816
60V
2.1A
500mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
250pF @ 10V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 125°C
hot RB520S30T1G
ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 10V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: SC-79, SOD-523
Azione1.356.240
30V
200mA (DC)
600mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
1µA @ 10V
-
Surface Mount
SC-79, SOD-523
SOD-523
-55°C ~ 150°C
85HFR10
Solid State Inc.

DIODE GEN PURP 100V 85A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
100 V
85A
1.3 V @ 85 A
Standard Recovery >500ns, > 200mA (Io)
-
200 µA @ 100 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 150°C
S3770
Microchip Technology

STD RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RBR5LAM30BTFTR
Rohm Semiconductor

DIODE SCHOTTKY 30V 5A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: -
Azione25.620
30 V
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 30 V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
STPSC10C065RY
STMicroelectronics

DIODE SIL CARBIDE 650V 10A I2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 480pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: I2PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
Azione2.916
650 V
10A
-
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
480pF @ 0V, 1MHz
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
I2PAK
-40°C ~ 175°C
CR5-120-BK
Central Semiconductor Corp

DIODE GEN PURP 5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
-
5A
1.2 V @ 5 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1200 V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
S15KLWH
Taiwan Semiconductor Corporation

1.5A, 800V, STANDARD RECOVERY RE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione60.000
800 V
1.5A
1.1 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 800 V
10pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 175°C
MBRAD2060H
Taiwan Semiconductor Corporation

20A, 60V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: 750pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: ThinDPAK
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione13.500
60 V
20A
750 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
750pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
ThinDPAK
-55°C ~ 150°C
1N3176R
Solid State Inc.

DIODE GEN PURP REV 350V 240A DO9

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 350 V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 240 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-9
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: -
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350 V
240A
1.25 V @ 240 A
Standard Recovery >500ns, > 200mA (Io)
-
75 µA @ 1400 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-9
-65°C ~ 200°C
S1J-HF
Comchip Technology

DIODE GEN PURP 600V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione198
600 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 600 V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SR115
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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150 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 150 V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C