Pagina 442 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4006-N-2-2-BP	Micro Commercial Co	DIODE GEN PURP 800V 1A DO-41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-204AL, DO-41, Axial	Azione4.656	800V	1A (DC)	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
1N5614GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: 45pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AC, DO-15, Axial	Azione5.632	200V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	45pF @ 12V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
1N4007	Fairchild/ON Semiconductor	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-204AL, DO-41, Axial	Azione33.049.872	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 175°C
USC1105	Semtech Corporation	DIODE GEN PURP 300V 2.1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 2.1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 25pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: Axial	Azione6.240	300V	2.1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	25pF @ 5V, 1MHz	Through Hole	Axial	Axial	-55°C ~ 150°C
U8BT-E3/4W	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione5.168	100V	8A	1.02V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 100V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
SARS02V	Sanken	DIODE GEN PURP 800V 1.2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 18µs Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: Axial	Azione3.296	800V	1.2A	920mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	18µs	10µA @ 800V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
VS-MBRD340-M3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 3A 40V DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: 189pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione3.024	40V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	189pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-40°C ~ 150°C
SS8P2LHM3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 570mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: 330pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-277, 3-PowerDFN	Azione6.192	20V	8A	570mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	330pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
BYT53F-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 300V 1.9A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1.9A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: SOD-57, Axial	Azione6.224	300V	1.9A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
BYG24GHE3_A/H	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 1.5A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione3.808	400V	1.5A	1.25V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 400V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
AM01A	Sanken	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: Axial	Azione4.128	600V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
CD1607-B140LF	Bourns Inc.	DIODE SCHOTTKY 40V 1A 2MINISMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: 2-Mini-SMA Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: SOD-123T	Azione4.368	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	100pF @ 4V, 1MHz	Surface Mount	SOD-123T	2-Mini-SMA	-55°C ~ 125°C
B340LB-E3/52T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-214AA, SMB	Azione6.272	40V	3A	450mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 150°C
APT30DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 295ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-247-2	Azione5.728	1000V	30A	3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	295ns	100µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
STTH8R04DI	STMicroelectronics	DIODE GEN PURP 400V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Insulated, TO-220AC Supplier Device Package: TO-220AC ins Operating Temperature - Junction: -40°C ~ 175°C	pacchetto: TO-220-2 Insulated, TO-220AC	Azione22.368	400V	8A	1.5V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	-40°C ~ 175°C
6A2-T	Diodes Incorporated	DIODE GEN PURP 200V 6A R6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: R6, Axial	Azione49.230	200V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	R6, Axial	R-6	-65°C ~ 175°C
BYV26DGP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AC, DO-15, Axial	Azione29.880	800V	1A	2.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
1N5407GP-AP	Micro Commercial Co	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	800 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
PWY8012	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 80 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Operating Temperature - Junction: -50°C ~ 175°C	pacchetto: -	Request a Quote	1200 V	80A	1.15 V @ 80 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 1200 V	-	Through Hole	TO-247-3	TO-247	-50°C ~ 175°C
CDSURT4148-HF	Comchip Technology	DIODE GEN PURP 75V 150MA 0603 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 0603/SOD-523F Operating Temperature - Junction: 125°C	pacchetto: -	Request a Quote	75 V	150mA	1 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	2.5 µA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	0603/SOD-523F	125°C
MPP5FA20-TE8L3	KYOCERA AVX	DIODE GP 200V 500MA SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione15.750	200 V	500mA	950 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 200 V	-	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
S1JFS-MWG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione52.422	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
TSSD10L200SW	Taiwan Semiconductor Corporation	10A, 200V, TRENCH SCHOTTKY Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 200 V Capacitance @ Vr, F: 540pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	200 V	10A	1.05 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 200 V	540pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-55°C ~ 150°C
31DQ06	SMC Diode Solutions	DIODE SCHOTTKY 60V 3.3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3.3A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 mA @ 60 V Capacitance @ Vr, F: 160pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: -	Azione4.665	60 V	3.3A	620 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 60 V	160pF @ 5V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C
1C5806-MSCL	Microchip Technology	UFR,FRR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SK3C0A	Good-Ark Semiconductor	RECTIFIER, SCHOTTKY, 3A, 200V, D Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 200 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione43.992	200 V	3A	850 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 200 V	80pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
UFT3020	Microchip Technology	DIODE GEN PURP 200V 30A TO204AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 15 µA @ 200 V Capacitance @ Vr, F: 140pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	200 V	30A	930 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	15 µA @ 200 V	140pF @ 10V, 1MHz	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)	-65°C ~ 175°C
UF600D	Diotec Semiconductor	ULTRAFAST P600 200V 6A 75NS 175C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 175°C	pacchetto: -	Azione3.000	200 V	6A	1 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 200 V	-	Through Hole	P600, Axial	P600	-50°C ~ 175°C

1N4006-N-2-2-BP

Micro Commercial Co

DIODE GEN PURP 800V 1A DO-41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-204AL, DO-41, Axial

Azione4.656

800V

1A (DC)

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

1N5614GP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AC, DO-15, Axial

Azione5.632

200V

1A

1.2V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 200V

45pF @ 12V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

1N4007

Fairchild/ON Semiconductor

DIODE GEN PURP 1KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

Azione33.049.872

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 175°C

USC1105

Semtech Corporation

DIODE GEN PURP 300V 2.1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 2.1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: Axial

Azione6.240

300V

2.1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 300V

25pF @ 5V, 1MHz

Through Hole

Axial

-55°C ~ 150°C

U8BT-E3/4W

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione5.168

100V

8A

1.02V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

10µA @ 100V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

SARS02V

Sanken

DIODE GEN PURP 800V 1.2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18µs
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: Axial

Azione3.296

800V

1.2A

920mV @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

18µs

10µA @ 800V

-

Through Hole

Axial

-40°C ~ 150°C

VS-MBRD340-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 40V DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione3.024

40V

3A

600mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 40V

189pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252, (D-Pak)

-40°C ~ 150°C

SS8P2LHM3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 8A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

Azione6.192

20V

8A

570mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

330pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

BYT53F-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 300V 1.9A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1.9A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: SOD-57, Axial

Azione6.224

300V

1.9A

1.1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 300V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

BYG24GHE3_A/H

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.5A SMA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione3.808

400V

1.5A

1.25V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

1µA @ 400V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

AM01A

Sanken

DIODE GEN PURP 600V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: Axial

Azione4.128

600V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 600V

-

Through Hole

Axial

-

-40°C ~ 150°C

CD1607-B140LF

Bourns Inc.

DIODE SCHOTTKY 40V 1A 2MINISMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123T
Supplier Device Package: 2-Mini-SMA
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: SOD-123T

Azione4.368

40V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

100pF @ 4V, 1MHz

Surface Mount

SOD-123T

2-Mini-SMA

-55°C ~ 125°C

B340LB-E3/52T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-214AA, SMB

Azione6.272

40V

3A

450mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 40V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 150°C

APT30DQ100BG

Microsemi Corporation

DIODE GEN PURP 1KV 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 3V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-247-2

Azione5.728

1000V

30A

3V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

295ns

100µA @ 1000V

-

Through Hole

TO-247-2

TO-247 [B]

-55°C ~ 175°C

STTH8R04DI

STMicroelectronics

DIODE GEN PURP 400V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C

pacchetto: TO-220-2 Insulated, TO-220AC

Azione22.368

400V

8A

1.5V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

-

Through Hole

TO-220-2 Insulated, TO-220AC

TO-220AC ins

-40°C ~ 175°C

6A2-T

Diodes Incorporated

DIODE GEN PURP 200V 6A R6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: R6, Axial

Azione49.230

200V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

-

Through Hole

R6, Axial

R-6

-65°C ~ 175°C

BYV26DGP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AC, DO-15, Axial

Azione29.880

800V

1A

2.5V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 800V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

1N5407GP-AP

Micro Commercial Co

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

800 V

3A

1.1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

40pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

PWY8012

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 80 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Operating Temperature - Junction: -50°C ~ 175°C

pacchetto: -

Request a Quote

1200 V

80A

1.15 V @ 80 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 1200 V

-

Through Hole

TO-247-3

TO-247

-50°C ~ 175°C

CDSURT4148-HF

Comchip Technology

DIODE GEN PURP 75V 150MA 0603

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 0603/SOD-523F
Operating Temperature - Junction: 125°C

pacchetto: -

Request a Quote

75 V

150mA

1 V @ 50 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

2.5 µA @ 75 V

4pF @ 0V, 1MHz

Surface Mount

2-SMD, No Lead

0603/SOD-523F

125°C

MPP5FA20-TE8L3

KYOCERA AVX

DIODE GP 200V 500MA SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione15.750

200 V

500mA

950 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

10 µA @ 200 V

-

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

S1JFS-MWG

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A SOD128

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione52.422

600 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 600 V

9pF @ 4V, 1MHz

Surface Mount

SOD-128

-55°C ~ 150°C

TSSD10L200SW

Taiwan Semiconductor Corporation

10A, 200V, TRENCH SCHOTTKY

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Capacitance @ Vr, F: 540pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

200 V

10A

1.05 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 µA @ 200 V

540pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

-55°C ~ 150°C

31DQ06

SMC Diode Solutions

DIODE SCHOTTKY 60V 3.3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3.3A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
Capacitance @ Vr, F: 160pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: -

Azione4.665

60 V

3.3A

620 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2 mA @ 60 V

160pF @ 5V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-40°C ~ 150°C

1C5806-MSCL

Microchip Technology

UFR,FRR

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

SK3C0A

Good-Ark Semiconductor

RECTIFIER, SCHOTTKY, 3A, 200V, D

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 200 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione43.992

200 V

3A

850 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

30 µA @ 200 V

80pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

UFT3020

Microchip Technology

DIODE GEN PURP 200V 30A TO204AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

200 V

30A

930 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

15 µA @ 200 V

140pF @ 10V, 1MHz

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

-65°C ~ 175°C

UF600D

Diotec Semiconductor

ULTRAFAST P600 200V 6A 75NS 175C

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C

pacchetto: -

Azione3.000

200 V

6A

1 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 200 V

-

Through Hole

P600, Axial

P600

-50°C ~ 175°C