Pagina 410 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDH16G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 16A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 16A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 550µA @ 650V Capacitance @ Vr, F: 470pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-220-2	Azione4.144	650V	16A (DC)	1.7V @ 16A	No Recovery Time > 500mA (Io)	0ns	550µA @ 650V	470pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
SB560-T-01	Diodes Incorporated	DIODE SCHOTTKY 60V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 670mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-201AD, Axial	Azione5.536	60V	5A	670mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
GP10WHM3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.5KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1500V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-204AL, DO-41, Axial	Azione3.264	1500V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1500V	5pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
1N4005GPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AL, DO-41, Axial	Azione7.648	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 600V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
MA2SD2900L	Panasonic Electronic Components	DIODE SCHOTTKY 30V 100MA SSMINI2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 120µA @ 30V Capacitance @ Vr, F: 11pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SSMini2-F1 Operating Temperature - Junction: 125°C (Max)	pacchetto: SC-79, SOD-523	Azione120.048	30V	100mA	420mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	1ns	120µA @ 30V	11pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SSMini2-F1	125°C (Max)
BYG20J/54	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione5.184	600V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 600V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
VS-80SQ035TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 8A DO204AR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 530mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AR, Axial Supplier Device Package: DO-204AR Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-204AR, Axial	Azione3.712	35V	8A	530mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 35V	-	Through Hole	DO-204AR, Axial	DO-204AR	-55°C ~ 175°C
VS-T110HF120	Vishay Semiconductor Diodes Division	DIODE MODULE 1.2KV 110A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 110A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	pacchetto: D-55 T-Module	Azione3.264	1200V	110A	-	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 1200V	-	Chassis Mount	D-55 T-Module	D-55	-
MBRH20030R	GeneSiC Semiconductor	DIODE MODULE 30V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	pacchetto: D-67	Azione7.648	30V	200A	650mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 20V	-	Chassis Mount	D-67	D-67	-
S2KHE3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AA, SMB	Azione5.872	800V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 800V	16pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
FR302G R0G	TSC America Inc.	DIODE, FAST, 3A, 100V, 150NS, DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-201AD, Axial	Azione3.200	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HS1BL RTG	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 100V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione3.872	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSX051VAM30TR	Rohm Semiconductor	SCHOTTKY BARRIER DIODES Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione2.208	-	-	-	-	-	-	-	-	-	-	-
UF5405-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 500V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: 36pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-201AD, Axial	Azione16.278	500V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 500V	36pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
MMBD6050	Fairchild/ON Semiconductor	DIODE GEN PURP 70V 200MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione25.392	70V	200mA	1.1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	2.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-55°C ~ 150°C
B320-13-F	Diodes Incorporated	DIODE SCHOTTKY 20V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: DO-214AB, SMC	Azione834.144	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	200pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 125°C
ER2A	Diotec Semiconductor	DIODE SUPERFST SMB 50V 35NS 150C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C	pacchetto: -	Request a Quote	50 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 50 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-50°C ~ 150°C
VS-TH230BL12P-S2	Vishay General Semiconductor - Diodes Division	DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
ES1E-HF	Comchip Technology	DIODE GEN PURP 300V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	300 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 300 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS210FSH	Taiwan Semiconductor Corporation	2A, 100V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 61pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	100 V	2A	850 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 100 V	61pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
PMEG2030CERX	Nexperia USA Inc.	PMEG2030CER/SOD123W/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.5 ns Current - Reverse Leakage @ Vr: 50 µA @ 20 V Capacitance @ Vr, F: 145pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C	pacchetto: -	Azione9.000	20 V	3A	580 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	5.5 ns	50 µA @ 20 V	145pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C
VS-HFA15TB60SL-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 15A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	600 V	15A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	10 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
RS3DH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione9.000	200 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 200 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TUAS8DH	Taiwan Semiconductor Corporation	8A, 200V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 62pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione18.000	200 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 200 V	62pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	SMPC4.6U	-55°C ~ 150°C
HSM2838CTL-E	Renesas Electronics Corporation	DIODE FOR HIGH SPEED SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1SS196-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 500 nA @ 80 V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	80 V	100mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	500 nA @ 80 V	3pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
HER101G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	50 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 50 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
STBR3012G2-TR	STMicroelectronics	DIODE GP 1.2KV 30A D2PAK HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK HV Operating Temperature - Junction: 175°C (Max)	pacchetto: -	Azione4.662	1200 V	30A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 1200 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK HV	175°C (Max)

IDH16G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 16A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 16A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 550µA @ 650V
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-220-2

Azione4.144

650V

16A (DC)

1.7V @ 16A

No Recovery Time > 500mA (Io)

0ns

550µA @ 650V

470pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

SB560-T-01

Diodes Incorporated

DIODE SCHOTTKY 60V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 670mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-201AD, Axial

Azione5.536

60V

5A

670mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

GP10WHM3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.5KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 1500V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-204AL, DO-41, Axial

Azione3.264

1500V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 1500V

5pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

1N4005GPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

Azione7.648

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 600V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

MA2SD2900L

Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA SSMINI2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 120µA @ 30V
Capacitance @ Vr, F: 11pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SSMini2-F1
Operating Temperature - Junction: 125°C (Max)

pacchetto: SC-79, SOD-523

Azione120.048

30V

100mA

420mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

1ns

120µA @ 30V

11pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SSMini2-F1

125°C (Max)

BYG20J/54

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione5.184

600V

1.5A

1.4V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

1µA @ 600V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

VS-80SQ035TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 8A DO204AR

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-204AR, Axial

Azione3.712

35V

8A

530mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 35V

-

Through Hole

DO-204AR, Axial

DO-204AR

-55°C ~ 175°C

VS-T110HF120

Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 110A D-55

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 110A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Supplier Device Package: D-55
Operating Temperature - Junction: -

pacchetto: D-55 T-Module

Azione3.264

1200V

110A

-

Standard Recovery >500ns, > 200mA (Io)

-

20mA @ 1200V

-

Chassis Mount

D-55 T-Module

D-55

-

MBRH20030R

GeneSiC Semiconductor

DIODE MODULE 30V 200A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

pacchetto: D-67

Azione7.648

30V

200A

650mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 20V

-

Chassis Mount

D-67

-

S2KHE3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AA, SMB

Azione5.872

800V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 800V

16pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

FR302G R0G

TSC America Inc.

DIODE, FAST, 3A, 100V, 150NS, DO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-201AD, Axial

Azione3.200

100V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 100V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

HS1BL RTG

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 100V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione3.872

100V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 100V

20pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

RSX051VAM30TR

Rohm Semiconductor

SCHOTTKY BARRIER DIODES

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione2.208

-

UF5405-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 500V
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-201AD, Axial

Azione16.278

500V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 500V

36pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

MMBD6050

Fairchild/ON Semiconductor

DIODE GEN PURP 70V 200MA SOT23-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione25.392

70V

200mA

1.1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 50V

2.5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

-55°C ~ 150°C

B320-13-F

Diodes Incorporated

DIODE SCHOTTKY 20V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: DO-214AB, SMC

Azione834.144

20V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

200pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 125°C

ER2A

Diotec Semiconductor

DIODE SUPERFST SMB 50V 35NS 150C

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C

pacchetto: -

Request a Quote

50 V

2A

1 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 50 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-50°C ~ 150°C

VS-TH230BL12P-S2

Vishay General Semiconductor - Diodes Division

DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

ES1E-HF

Comchip Technology

DIODE GEN PURP 300V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

300 V

1A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 300 V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SS210FSH

Taiwan Semiconductor Corporation

2A, 100V, SCHOTTKY RECTIFIER

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 61pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

100 V

2A

850 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 100 V

61pF @ 4V, 1MHz

Surface Mount

SOD-128

-55°C ~ 150°C

PMEG2030CERX

Nexperia USA Inc.

PMEG2030CER/SOD123W/SOD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.5 ns
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Capacitance @ Vr, F: 145pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C

pacchetto: -

Azione9.000

20 V

3A

580 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

5.5 ns

50 µA @ 20 V

145pF @ 1V, 1MHz

Surface Mount

SOD-123W

175°C

VS-HFA15TB60SL-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

600 V

15A

2 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

10 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

RS3DH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione9.000

200 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

10 µA @ 200 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

TUAS8DH

Taiwan Semiconductor Corporation

8A, 200V, STANDARD RECOVERY RECT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione18.000

200 V

8A

1.1 V @ 8 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 200 V

62pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

SMPC4.6U

-55°C ~ 150°C

HSM2838CTL-E

Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

1SS196-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

80 V

100mA

1.2 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

500 nA @ 80 V

3pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-55°C ~ 150°C

HER101G

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

50 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 50 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

STBR3012G2-TR

STMicroelectronics

DIODE GP 1.2KV 30A D2PAK HV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK HV
Operating Temperature - Junction: 175°C (Max)

pacchetto: -

Azione4.662

1200 V

30A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

2 µA @ 1200 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK HV

175°C (Max)