Pagina 357 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  357/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SMD14HE-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 1A SOD123HE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: SOD-123H
Azione2.672
40V
1A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 125°C
HS24515E3
Microsemi Corporation

DIODE MODULE 15V 240A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: 370mV @ 240A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150mA @ 15V
  • Capacitance @ Vr, F: 21700pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
pacchetto: HALF-PAK
Azione2.448
15V
240A
370mV @ 240A
Fast Recovery =< 500ns, > 200mA (Io)
-
150mA @ 15V
21700pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
HALF-PAK
-
hot MSR1560
ON Semiconductor

DIODE GEN PURP 600V 15A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: TO-220-2
Azione32.232
600V
15A
1.8V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
15µA @ 600V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 150°C
S40MR
GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 40A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 190°C
pacchetto: DO-203AB, DO-5, Stud
Azione6.496
1000V
40A
1.1V @ 40A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 190°C
STPSC20065D
STMicroelectronics

DIODE SCHOTTKY 650V TO220AC

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 300µA @ 650V
  • Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-220-2
Azione3.456
650V
20A
1.45V @ 20A
No Recovery Time > 500mA (Io)
0ns
300µA @ 650V
1250pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
hot FMY-1036S
Sanken

DIODE GEN PURP 600V 3A TO220F-2L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-220-2 Full Pack
Azione4.944
600V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
10µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-40°C ~ 150°C
SR509 A0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 9

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-201AD, Axial
Azione7.936
90V
5A
850mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5820 B0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-201AD, Axial
Azione3.360
20V
3A
475mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
ES1JLHR3G
TSC America Inc.

DIODE, SUPER FAST, 1A, 600V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione2.896
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
MBRD6200TR
SMC Diode Solutions

DIODE SCHOTTKY 200V 6A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Capacitance @ Vr, F: 150pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.424
200V
6A
920mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 200V
150pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-55°C ~ 150°C
SE15PJ-M3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 900ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-220AA
Azione7.696
600V
1.5A
1.05V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
900ns
5µA @ 600V
9.5pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
GS1J-TP
Micro Commercial Co

DIODE GEN PURP 600V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (HSMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione345.264
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (HSMA)
-55°C ~ 150°C
SM5398PL-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 11pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
800 V
1.5A
1.1 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
4 µs
5 µA @ 800 V
11pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
SRT5100UF_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 100V 5A SMBF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 100 V
  • Capacitance @ Vr, F: 360pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBF
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
100 V
5A
660 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 100 V
360pF @ 4V, 1MHz
Surface Mount
DO-221AA, SMB Flat Leads
SMBF
-55°C ~ 150°C
VS-E5TX1206FP-N3
Vishay General Semiconductor - Diodes Division

DIODE GP 600V 12A TO220-2FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 29 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220-2 Full Pack
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione2.844
600 V
12A
2.23 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
29 ns
10 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220-2 Full Pack
-55°C ~ 175°C
S5JB
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 5A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione34.800
600 V
5A
1.1 V @ 5 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 600 V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
R3540PF
Microchip Technology

DIODE GEN PURP REV 400V 35A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
400 V
35A
1.1 V @ 35 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 400 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-65°C ~ 175°C
1N4148WXHE3-TP
Micro Commercial Co

DIODE GEN PURP 100V 150MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 25 nA @ 20 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione4.662
100 V
150mA
1.25 V @ 150 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
25 nA @ 20 V
2pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 150°C
SF18GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione14.985
600 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SS23SHE3_B-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 30V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 30 V
  • Capacitance @ Vr, F: 130pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
30 V
2A
550 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 30 V
130pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SICB20120Y-TP
Micro Commercial Co

DIODE GEN PURP 1.2KV 20A D2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
  • Capacitance @ Vr, F: 1552pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione4.620
1200 V
20A
1.55 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
25 µA @ 1200 V
1552pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
SK345A-LTP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 45 V
  • Capacitance @ Vr, F: 250pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -50°C ~ 125°C
pacchetto: -
Request a Quote
45 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 45 V
250pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-50°C ~ 125°C
JAN1N5195UR-1-TR
Microchip Technology

SIGNAL OR COMPUTER DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RS1MSWFN-7
Diodes Incorporated

DIODE GEN PURP 1KV 1A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: 3pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
1000 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
10 µA @ 1000 V
3pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 150°C
2A01-AP
Micro Commercial Co

DIODE GEN PURP 50V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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50 V
2A
1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 50 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
1N6942UTK3CS-TR
Microchip Technology

DIODE SCHOTTKY 45V 150A THINKEY3

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 45 V
  • Capacitance @ Vr, F: 7000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™3
  • Supplier Device Package: ThinKey™3
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
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45 V
150A
460 mV @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 mA @ 45 V
7000pF @ 5V, 1MHz
Surface Mount
ThinKey™3
ThinKey™3
-65°C ~ 150°C
BAT46GW
Taiwan Semiconductor Corporation

0.25A, 100V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 75 V
  • Capacitance @ Vr, F: 39pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
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100 V
250mA
1 V @ 250 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
5 µA @ 75 V
39pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 125°C
TPM2850-01
DNmicron

SILICON SCHOTTKY DIODE. HAVE GOO

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Azione48.000
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