Pagina 331 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BY500-400-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 125°C (Max)	pacchetto: DO-201AD, Axial	Azione7.456	400V	5A	1.35V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 400V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	125°C (Max)
GP10JEHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AL, DO-41, Axial	Azione5.296	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 600V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
IRD3902	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 20A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 62.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350ns Current - Reverse Leakage @ Vr: 50µA @ 300V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	pacchetto: DO-203AB, DO-5, Stud	Azione5.056	300V	20A	1.65V @ 62.8A	Fast Recovery =< 500ns, > 200mA (Io)	350ns	50µA @ 300V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
VS-SD3000C04K	Vishay Semiconductor Diodes Division	DIODE MODULE 400V 3800A DO200AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3800A Voltage - Forward (Vf) (Max) @ If: 1.22V @ 6000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75mA @ 400V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: DO-200AC, K-PUK Operating Temperature - Junction: -	pacchetto: DO-200AC, K-PUK	Azione5.584	400V	3800A	1.22V @ 6000A	Standard Recovery >500ns, > 200mA (Io)	-	75mA @ 400V	-	Clamp On	DO-200AC, K-PUK	DO-200AC, K-PUK	-
1N3274R	Powerex Inc.	DIODE GEN PURP 1.2KV 160A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 160A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-205AB, DO-9, Stud	Azione4.016	1200V	160A	-	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 1200V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 175°C
VS-70HF40M	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 70A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	pacchetto: DO-203AB, DO-5, Stud	Azione7.776	200V	70A	1.35V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
STTH30AC06FP	STMicroelectronics	DIODE TURBO2 600V 30A TO-220FPAC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.95V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FPAC Operating Temperature - Junction: 175°C (Max)	pacchetto: TO-220-3 Full Pack	Azione7.312	600V	30A	1.95V @ 30A	Standard Recovery >500ns, > 200mA (Io)	60ns	20µA @ 600V	-	Through Hole	TO-220-3 Full Pack	TO-220FPAC	175°C (Max)
SK15H45 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 15A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: 200°C (Max)	pacchetto: R6, Axial	Azione4.896	45V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 45V	-	Through Hole	R6, Axial	R-6	200°C (Max)
SF68GHA0G	TSC America Inc.	DIODE, SUPER FAST, 6A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-201AD, Axial	Azione5.600	600V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SJPA-H3VL	Sanken	DIODE SCHOTTKY SMD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 360mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -40°C ~ 125°C	pacchetto: 2-SMD, J-Lead	Azione5.936	30V	2A	360mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Surface Mount	2-SMD, J-Lead	2-SMD	-40°C ~ 125°C
V8P8-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 80V 4A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 660mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-277, 3-PowerDFN	Azione2.608	80V	4A	660mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 80V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
CMS07(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: SOD-128	Azione3.360	30V	2A	450mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
SS19LHMTG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione7.440	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
TST20L150CW C0G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 20A, 15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 960mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-3	Azione3.168	150V	10A	960mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
S5JBHR5G	TSC America Inc.	DIODE, 5A, 600V, AEC-Q101, DO-21 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AA, SMB	Azione5.280	600V	5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
CDBMF160-HF	Comchip Technology	DIODE SCHOTTKY 60V 1A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -40°C ~ 125°C	pacchetto: SOD-123F	Azione2.784	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	35pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-40°C ~ 125°C
SE30AFG-M3/6A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-221AC, SMA Flat Leads	Azione27.312	400V	3A (DC)	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 400V	19pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-55°C ~ 175°C
CMR1U-04FL-TR13-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 400V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione2.931	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 400 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
FE1B	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -50°C ~ 175°C	pacchetto: -	Request a Quote	100 V	1A	980 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	2 µA @ 100 V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-50°C ~ 175°C
ES2LJH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione18.000	600 V	2A	1.7 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SDUR1060CTA	SMC Diode Solutions	600V, 10A, TO-220AB, ULTRA FAST Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione900	-	-	-	-	-	-	-	-	-	-	-
SF35G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione7.470	300 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 300 V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
ES2DA	Good-Ark Semiconductor	RECTIFIER, SUPER FAST, 2A, 200V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione41.475	200 V	2A	920 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 200 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N3659R	Microchip Technology	DIODE GEN PURP REV 50V 35A DO21 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Press Fit Package / Case: DO-208AA Supplier Device Package: DO-21 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	50 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	Press Fit	DO-208AA	DO-21	-65°C ~ 175°C
S4230F	Microchip Technology	DIODE GEN PURP 300V 125A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	300 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 300 V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
VS-8ETL06SHM3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	600 V	8A	1.05 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 175°C
JANS1N5806US-TR	Microchip Technology	DIODE GEN PURP 150V 1A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	150 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
1N5805US	Microchip Technology	DIODE GEN PURP 135V 1A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 135 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 125 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	135 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 125 V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C

BY500-400-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 125°C (Max)

pacchetto: DO-201AD, Axial

Azione7.456

400V

5A

1.35V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 400V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

125°C (Max)

GP10JEHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

Azione5.296

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 600V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

IRD3902

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 20A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 62.8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350ns
Current - Reverse Leakage @ Vr: 50µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C

pacchetto: DO-203AB, DO-5, Stud

Azione5.056

300V

20A

1.65V @ 62.8A

Fast Recovery =< 500ns, > 200mA (Io)

350ns

50µA @ 300V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 125°C

VS-SD3000C04K

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 3800A DO200AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3800A
Voltage - Forward (Vf) (Max) @ If: 1.22V @ 6000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: DO-200AC, K-PUK
Operating Temperature - Junction: -

pacchetto: DO-200AC, K-PUK

Azione5.584

400V

3800A

1.22V @ 6000A

Standard Recovery >500ns, > 200mA (Io)

-

75mA @ 400V

-

Clamp On

DO-200AC, K-PUK

-

1N3274R

Powerex Inc.

DIODE GEN PURP 1.2KV 160A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 160A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-205AB, DO-9, Stud

Azione4.016

1200V

160A

-

Standard Recovery >500ns, > 200mA (Io)

-

12mA @ 1200V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 175°C

VS-70HF40M

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 70A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C

pacchetto: DO-203AB, DO-5, Stud

Azione7.776

200V

70A

1.35V @ 220A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 180°C

STTH30AC06FP

STMicroelectronics

DIODE TURBO2 600V 30A TO-220FPAC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)

pacchetto: TO-220-3 Full Pack

Azione7.312

600V

30A

1.95V @ 30A

Standard Recovery >500ns, > 200mA (Io)

60ns

20µA @ 600V

-

Through Hole

TO-220-3 Full Pack

TO-220FPAC

175°C (Max)

SK15H45 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 15A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: 200°C (Max)

pacchetto: R6, Axial

Azione4.896

45V

15A

560mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 45V

-

Through Hole

R6, Axial

R-6

200°C (Max)

SF68GHA0G

TSC America Inc.

DIODE, SUPER FAST, 6A, 600V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-201AD, Axial

Azione5.600

600V

6A

1.7V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 600V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SJPA-H3VL

Sanken

DIODE SCHOTTKY SMD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 360mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -40°C ~ 125°C

pacchetto: 2-SMD, J-Lead

Azione5.936

30V

2A

360mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 30V

-

Surface Mount

2-SMD, J-Lead

2-SMD

-40°C ~ 125°C

V8P8-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 4A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 700µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

Azione2.608

80V

4A

660mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

700µA @ 80V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

CMS07(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: SOD-128

Azione3.360

30V

2A

450mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 150°C

SS19LHMTG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 9

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione7.440

90V

1A

800mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 90V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

TST20L150CW C0G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 20A, 15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 960mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-3

Azione3.168

150V

10A

960mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

S5JBHR5G

TSC America Inc.

DIODE, 5A, 600V, AEC-Q101, DO-21

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AA, SMB

Azione5.280

600V

5A

1.1V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 600V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

CDBMF160-HF

Comchip Technology

DIODE SCHOTTKY 60V 1A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -40°C ~ 125°C

pacchetto: SOD-123F

Azione2.784

60V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

35pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-40°C ~ 125°C

SE30AFG-M3/6A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-221AC, SMA Flat Leads

Azione27.312

400V

3A (DC)

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 400V

19pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-55°C ~ 175°C

CMR1U-04FL-TR13-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 400V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione2.931

400 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

1 µA @ 400 V

10pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 150°C

FE1B

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 175°C

pacchetto: -

Request a Quote

100 V

1A

980 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

2 µA @ 100 V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-50°C ~ 175°C

ES2LJH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione18.000

600 V

2A

1.7 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 600 V

20pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SDUR1060CTA

SMC Diode Solutions

600V, 10A, TO-220AB, ULTRA FAST

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione900

-

SF35G

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione7.470

300 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 300 V

60pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

ES2DA

Good-Ark Semiconductor

RECTIFIER, SUPER FAST, 2A, 200V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione41.475

200 V

2A

920 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

5 µA @ 200 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N3659R

Microchip Technology

DIODE GEN PURP REV 50V 35A DO21

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Press Fit
Package / Case: DO-208AA
Supplier Device Package: DO-21
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

50 V

35A

1.1 V @ 35 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 50 V

-

Press Fit

DO-208AA

DO-21

-65°C ~ 175°C

S4230F

Microchip Technology

DIODE GEN PURP 300V 125A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

300 V

125A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 300 V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

VS-8ETL06SHM3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

600 V

8A

1.05 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

5 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 175°C

JANS1N5806US-TR

Microchip Technology

DIODE GEN PURP 150V 1A D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

150 V

1A

875 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 150 V

25pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

1N5805US

Microchip Technology

DIODE GEN PURP 135V 1A D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 135 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 125 V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

135 V

1A

875 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 125 V

25pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C