Pagina 321 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  321/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SF10AG-B
Diodes Incorporated

DIODE GEN PURP 50V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 75pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione5.232
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
75pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
hot SK33
Micro Commercial Co

DIODE SCHOTTKY 30V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione36.000
30V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
hot 19TQ015
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15V 19A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io): 19A
  • Voltage - Forward (Vf) (Max) @ If: 360mV @ 19A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 15V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: TO-220-2
Azione852.720
15V
19A
360mV @ 19A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 15V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 125°C
SET061212
Semtech Corporation

DIODE GEN PURP 600V 30A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2000ns
  • Current - Reverse Leakage @ Vr: 2µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: Module
Azione5.616
600V
30A
1.2V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
2000ns
2µA @ 600V
-
Chassis Mount
Module
-
-55°C ~ 150°C
SFA801G C0G
TSC America Inc.

DIODE, SUPER FAST, 8A, 50V, 35NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-2
Azione2.256
50V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
100pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBRF1045 C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-2 Full Pack
Azione2.576
45V
10A
700mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
ES3BHE3_A/I
Vishay Semiconductor Diodes Division

DIODE UFAST 100V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione7.472
100V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
MUR160AHR1G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 600V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 27pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione3.072
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 600V
27pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 175°C
S1BLHRFG
TSC America Inc.

DIODE, 1A, 100V, AEC-Q101, SUB S

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-219AB
Azione3.696
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
GP2D005A060A
Global Power Technologies Group

SCHOTTKY DIODE 600V 5A TO-220-2L

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: 264pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -50°C ~ 175°C
pacchetto: TO-220-2
Azione6.540
600V
15A (DC)
1.65V @ 5A
No Recovery Time > 500mA (Io)
0ns
20µA @ 600V
264pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-50°C ~ 175°C
hot RB060M-40TR
Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SOD-123F
Azione142.212
40V
2A
560mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
hot STTH6012W
STMicroelectronics

DIODE GEN PURP 1.2KV 60A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.25V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 125ns
  • Current - Reverse Leakage @ Vr: 30µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: DO-247-2 (Straight Leads)
Azione9.144
1200V
60A
2.25V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
125ns
30µA @ 1200V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
175°C (Max)
BAT854W,115
Nexperia USA Inc.

DIODE SCHOTTKY 40V 200MA SOT323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 25V
  • Capacitance @ Vr, F: 20pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-70, SOT-323
Azione150.180
40V
200mA (DC)
550mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
500nA @ 25V
20pF @ 1V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323-3
150°C (Max)
JAN1N6941UTK3-TR
Microchip Technology

DIODE SCHOTTKY 30V 150A THINKEY3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 30 V
  • Capacitance @ Vr, F: 7500pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™3
  • Supplier Device Package: ThinKey™3
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
30 V
150A
500 mV @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 mA @ 30 V
7500pF @ 5V, 1MHz
Surface Mount
ThinKey™3
ThinKey™3
-65°C ~ 150°C
ZHCS750QTA
Diodes Incorporated

Schottky Diode SOT23 T&R 3K

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 750 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 12 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 25pF @ 25V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Operating Temperature - Junction: 125°C
pacchetto: -
Request a Quote
40 V
1.5A
650 mV @ 750 mA
Fast Recovery =< 500ns, > 200mA (Io)
12 ns
100 µA @ 30 V
25pF @ 25V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
125°C
JANTX1N6773R
Microchip Technology

DIODE GEN PURP 600V 8A TO257

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 480 V
  • Capacitance @ Vr, F: 200pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-257-3
  • Supplier Device Package: TO-257
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
600 V
8A
1.6 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
10 µA @ 480 V
200pF @ 5V, 1MHz
Through Hole
TO-257-3
TO-257
-
R25120
Microchip Technology

RECTIFIER

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: -
Request a Quote
1200 V
25A
1.1 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1200 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
HER208GH
Taiwan Semiconductor Corporation

75NS, 2A, 1000V, HIGH EFFICIENT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione10.500
1000 V
2A
1.7 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 1000 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SOD4007
MDD

DIODE GEN PURP 1KV 1A SOD123FL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123FL
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Request a Quote
1000 V
1A
1.1 V @ 1 A
-
-
-
4pF @ 4V, 1MHz
Surface Mount
SOD-123FL
SOD-123FL
-55°C ~ 125°C
SS14LW
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 1A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Azione233.691
40 V
1A
550 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
-
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 125°C
FR3A-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
50 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
10 µA @ 50 V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
1N5392GP-AP
Micro Commercial Co

DIODE GEN PURP 100V 1.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
100 V
1.5A
1.4 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 100 V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
RS1JLS
Taiwan Semiconductor Corporation

DIODE GP 600V 1.2A SOD123HE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione66.513
600 V
1.2A
1.3 V @ 1.2 A
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
5 µA @ 600 V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
VS-HFA04TB60S-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 4A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 42 ns
  • Current - Reverse Leakage @ Vr: 3 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione10.467
600 V
4A
2.2 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
42 ns
3 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
R4380
Microchip Technology

DIODE GEN PURP 800V 150A DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: -
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800 V
150A
1.1 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 800 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
DSEP6-06AS-TRL
IXYS

DIODE GEN PURP 600V 6A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 2.02 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: -
Azione13.599
600 V
6A
2.02 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
20 ns
50 µA @ 600 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-40°C ~ 175°C
JANTXV1N3891AR
Microchip Technology

DIODE GEN PURP 200V 20A DO203AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 38 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 115pF @ 10V, 1MHz
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
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200 V
20A
1.5 V @ 38 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
-
115pF @ 10V, 1MHz
Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 175°C
SDS170J025H5-ISATH
Luminus Devices Inc.

DIODE 1700V-25A TO247-2L

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2L
  • Operating Temperature - Junction: -
pacchetto: -
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1700 V
25A
-
-
-
-
-
Through Hole
TO-247-2
TO-247-2L
-