Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Incorporated |
DIODE GEN PURP 50V 1A AXIAL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione5.232 |
|
50V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 75pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
||
Micro Commercial Co |
DIODE SCHOTTKY 30V 3A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione36.000 |
|
30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 19A TO220AC
|
pacchetto: TO-220-2 |
Azione852.720 |
|
15V | 19A | 360mV @ 19A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 15V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
||
Semtech Corporation |
DIODE GEN PURP 600V 30A MODULE
|
pacchetto: Module |
Azione5.616 |
|
600V | 30A | 1.2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 2000ns | 2µA @ 600V | - | Chassis Mount | Module | - | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SUPER FAST, 8A, 50V, 35NS
|
pacchetto: TO-220-2 |
Azione2.256 |
|
50V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 100pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 10A,
|
pacchetto: TO-220-2 Full Pack |
Azione2.576 |
|
45V | 10A | 700mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE UFAST 100V 3A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione7.472 |
|
100V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 600V,
|
pacchetto: DO-204AL, DO-41, Axial |
Azione3.072 |
|
600V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | 27pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 175°C |
||
TSC America Inc. |
DIODE, 1A, 100V, AEC-Q101, SUB S
|
pacchetto: DO-219AB |
Azione3.696 |
|
100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 100V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
||
Global Power Technologies Group |
SCHOTTKY DIODE 600V 5A TO-220-2L
|
pacchetto: TO-220-2 |
Azione6.540 |
|
600V | 15A (DC) | 1.65V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 600V | 264pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -50°C ~ 175°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 40V 2A PMDU
|
pacchetto: SOD-123F |
Azione142.212 |
|
40V | 2A | 560mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
||
STMicroelectronics |
DIODE GEN PURP 1.2KV 60A DO247
|
pacchetto: DO-247-2 (Straight Leads) |
Azione9.144 |
|
1200V | 60A | 2.25V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 30µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
||
Nexperia USA Inc. |
DIODE SCHOTTKY 40V 200MA SOT323
|
pacchetto: SC-70, SOT-323 |
Azione150.180 |
|
40V | 200mA (DC) | 550mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 25V | 20pF @ 1V, 1MHz | Surface Mount | SC-70, SOT-323 | SOT-323-3 | 150°C (Max) |
||
Microchip Technology |
DIODE SCHOTTKY 30V 150A THINKEY3
|
pacchetto: - |
Request a Quote |
|
30 V | 150A | 500 mV @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 30 V | 7500pF @ 5V, 1MHz | Surface Mount | ThinKey™3 | ThinKey™3 | -65°C ~ 150°C |
||
Diodes Incorporated |
Schottky Diode SOT23 T&R 3K
|
pacchetto: - |
Request a Quote |
|
40 V | 1.5A | 650 mV @ 750 mA | Fast Recovery =< 500ns, > 200mA (Io) | 12 ns | 100 µA @ 30 V | 25pF @ 25V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 125°C |
||
Microchip Technology |
DIODE GEN PURP 600V 8A TO257
|
pacchetto: - |
Request a Quote |
|
600 V | 8A | 1.6 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 480 V | 200pF @ 5V, 1MHz | Through Hole | TO-257-3 | TO-257 | - |
||
Microchip Technology |
RECTIFIER
|
pacchetto: - |
Request a Quote |
|
1200 V | 25A | 1.1 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1200 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 (DO-203AA) | -65°C ~ 200°C |
||
Taiwan Semiconductor Corporation |
75NS, 2A, 1000V, HIGH EFFICIENT
|
pacchetto: - |
Azione10.500 |
|
1000 V | 2A | 1.7 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 1000 V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
||
MDD |
DIODE GEN PURP 1KV 1A SOD123FL
|
pacchetto: - |
Request a Quote |
|
1000 V | 1A | 1.1 V @ 1 A | - | - | - | 4pF @ 4V, 1MHz | Surface Mount | SOD-123FL | SOD-123FL | -55°C ~ 125°C |
||
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A SOD123W
|
pacchetto: - |
Azione233.691 |
|
40 V | 1A | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 125°C |
||
Micro Commercial Co |
Interface
|
pacchetto: - |
Request a Quote |
|
50 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 50 V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 100V 1.5A DO15
|
pacchetto: - |
Request a Quote |
|
100 V | 1.5A | 1.4 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE GP 600V 1.2A SOD123HE
|
pacchetto: - |
Azione66.513 |
|
600 V | 1.2A | 1.3 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 600 V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 4A TO263AB
|
pacchetto: - |
Azione10.467 |
|
600 V | 4A | 2.2 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 42 ns | 3 µA @ 600 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
||
Microchip Technology |
DIODE GEN PURP 800V 150A DO205AA
|
pacchetto: - |
Request a Quote |
|
800 V | 150A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 800 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
||
IXYS |
DIODE GEN PURP 600V 6A TO252AA
|
pacchetto: - |
Azione13.599 |
|
600 V | 6A | 2.02 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 50 µA @ 600 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252AA | -40°C ~ 175°C |
||
Microchip Technology |
DIODE GEN PURP 200V 20A DO203AA
|
pacchetto: - |
Request a Quote |
|
200 V | 20A | 1.5 V @ 38 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | 115pF @ 10V, 1MHz | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
||
Luminus Devices Inc. |
DIODE 1700V-25A TO247-2L
|
pacchetto: - |
Request a Quote |
|
1700 V | 25A | - | - | - | - | - | Through Hole | TO-247-2 | TO-247-2L | - |