Pagina 278 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SDB06S60	Infineon Technologies	DIODE SCHOTTKY 600V 6A D2PAK Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 300pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione54.780	600V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	300pF @ 0V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
PR1504S-A	Diodes Incorporated	DIODE GEN PURP 400V 1.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-204AL, DO-41, Axial	Azione2.560	400V	1.5A	1.2V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
EGP10C-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 22pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-204AL, DO-41, Axial	Azione2.432	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 150V	22pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
1N4004	ON Semiconductor	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AL, DO-41, Axial	Azione6.850.224	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
VS-SD1100C32J	Vishay Semiconductor Diodes Division	DIODE GP 3.2KV 1100A B43 PUK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3200V Current - Average Rectified (Io): 1100A Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: B-43, PUK Supplier Device Package: B-43, Hockey PUK Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: B-43, PUK	Azione3.680	3200V	1100A	1.44V @ 1500A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Stud Mount	B-43, PUK	B-43, Hockey PUK	-40°C ~ 150°C
VS-20ETF02STRL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 20A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione5.904	200V	20A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-40°C ~ 150°C
VS-8ETH03STRRPBF	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 8A 300V D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 27ns Current - Reverse Leakage @ Vr: 20µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione2.032	300V	8A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	27ns	20µA @ 300V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 175°C
VF20150SG-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 150V 20A ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-3 Full Pack, Isolated Tab	Azione6.816	150V	20A	1.6V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 150V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
MBRS320PT3G	ON Semiconductor	DIODE SCHOTTKY 20V 3A SMC-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-214AB, SMC	Azione3.408	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 20V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 150°C
SS115L M2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione2.112	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
CDBT0540-G	Comchip Technology	DIODE SCHOTTKY 40V 500MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 125pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione6.944	40V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	125pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	125°C (Max)
SS14L RQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: DO-219AB	Azione4.064	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
BAV103,135	Nexperia USA Inc.	DIODE GEN PURP 200V 250MA LLDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80C Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-213AC, MINI-MELF, SOD-80	Azione4.848	200V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80C	175°C (Max)
VS-8TQ100SPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 8A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 100V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione8.088	100V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 100V	500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
1N3595TR	Fairchild/ON Semiconductor	DIODE GEN PURP 150V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 1nA @ 125V Capacitance @ Vr, F: 8pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione102.726	150V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	8pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
ES1C-TP	Micro Commercial Co	DIODE GEN PURP 150V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (HSMA) Operating Temperature - Junction: -50°C ~ 150°C	pacchetto: -	Request a Quote	150 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 150 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (HSMA)	-50°C ~ 150°C
MUR115GP-TP	Micro Commercial Co	DIODE GEN PURP 150V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Request a Quote	150 V	1A	970 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	5 µA @ 150 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
NTE5908	NTE Electronics, Inc	DIODE GEN PURP 800V 16A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	800 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 800 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
S1MF_R1_00001	Panjit International Inc.	DIODE GEN PURP 1KV 1A SMBF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	9pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C
JAN1N3910R	Microchip Technology	DIODE GEN PURP 100V 30A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Request a Quote	100 V	30A	1.4 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 150°C
ES1LD	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	200 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
G10100F4	Diodes Incorporated	DIODE SCHOTTKY 100V 10A F4 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
20F20	Solid State Inc.	DIODE GEN PURP 200V 20A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Request a Quote	200 V	20A	1.2 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
TST30U60CW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 15A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	60 V	15A	580 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
JANTX1N3164IL	Microchip Technology	RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
GB05MPS33-263	GeneSiC Semiconductor	DIODE SIL CARB 3.3KV 14A TO263-7 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 3300 V Current - Average Rectified (Io): 14A Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 10 µA @ 3000 V Capacitance @ Vr, F: 288pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Request a Quote	3300 V	14A	3 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 3000 V	288pF @ 1V, 1MHz	Surface Mount	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	TO-263-7	-55°C ~ 175°C
TST40L45CW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 20A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 590 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	45 V	20A	590 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
JANTXV1N3295R	Microchip Technology	DIODE GEN PURP 100A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	-	100A	1.55 V @ 310 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 1000 V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C

SDB06S60

Infineon Technologies

DIODE SCHOTTKY 600V 6A D2PAK

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione54.780

600V

6A (DC)

1.7V @ 6A

No Recovery Time > 500mA (Io)

0ns

200µA @ 600V

300pF @ 0V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

PR1504S-A

Diodes Incorporated

DIODE GEN PURP 400V 1.5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-204AL, DO-41, Axial

Azione2.560

400V

1.5A

1.2V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

EGP10C-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-204AL, DO-41, Axial

Azione2.432

150V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 150V

22pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

1N4004

ON Semiconductor

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

Azione6.850.224

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

VS-SD1100C32J

Vishay Semiconductor Diodes Division

DIODE GP 3.2KV 1100A B43 PUK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3200V
Current - Average Rectified (Io): 1100A
Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: B-43, PUK
Supplier Device Package: B-43, Hockey PUK
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: B-43, PUK

Azione3.680

3200V

1100A

1.44V @ 1500A

Fast Recovery =< 500ns, > 200mA (Io)

-

Stud Mount

B-43, PUK

B-43, Hockey PUK

-40°C ~ 150°C

VS-20ETF02STRL-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 20A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione5.904

200V

20A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

160ns

100µA @ 200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

-40°C ~ 150°C

VS-8ETH03STRRPBF

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 8A 300V D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27ns
Current - Reverse Leakage @ Vr: 20µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione2.032

300V

8A

1.25V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

27ns

20µA @ 300V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 175°C

VF20150SG-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 20A ITO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-3 Full Pack, Isolated Tab

Azione6.816

150V

20A

1.6V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 150V

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

MBRS320PT3G

ON Semiconductor

DIODE SCHOTTKY 20V 3A SMC-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-214AB, SMC

Azione3.408

20V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2µA @ 20V

-

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 150°C

SS115L M2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione2.112

150V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 150V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

CDBT0540-G

Comchip Technology

DIODE SCHOTTKY 40V 500MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 125pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione6.944

40V

500mA

550mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 30V

125pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

125°C (Max)

SS14L RQG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: DO-219AB

Azione4.064

40V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 40V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 125°C

BAV103,135

Nexperia USA Inc.

DIODE GEN PURP 200V 250MA LLDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80C
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-213AC, MINI-MELF, SOD-80

Azione4.848

200V

250mA (DC)

1.25V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 200V

5pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80C

175°C (Max)

VS-8TQ100SPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 550µA @ 100V
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione8.088

100V

8A

720mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

550µA @ 100V

500pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

1N3595TR

Fairchild/ON Semiconductor

DIODE GEN PURP 150V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 1nA @ 125V
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione102.726

150V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

3µs

1nA @ 125V

8pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

ES1C-TP

Micro Commercial Co

DIODE GEN PURP 150V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C

pacchetto: -

Request a Quote

150 V

1A

-

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 150 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (HSMA)

-50°C ~ 150°C

MUR115GP-TP

Micro Commercial Co

DIODE GEN PURP 150V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

150 V

1A

970 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

5 µA @ 150 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

NTE5908

NTE Electronics, Inc

DIODE GEN PURP 800V 16A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 50 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12 mA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

800 V

16A

1.23 V @ 50 A

Standard Recovery >500ns, > 200mA (Io)

-

12 mA @ 800 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 175°C

S1MF_R1_00001

Panjit International Inc.

DIODE GEN PURP 1KV 1A SMBF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

1000 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 1000 V

9pF @ 4V, 1MHz

Surface Mount

DO-221AA, SMB Flat Leads

SMBF

-55°C ~ 150°C

JAN1N3910R

Microchip Technology

DIODE GEN PURP 100V 30A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

100 V

30A

1.4 V @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 150°C

ES1LD

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

200 V

1A

950 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

16pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

G10100F4

Diodes Incorporated

DIODE SCHOTTKY 100V 10A F4

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

20F20

Solid State Inc.

DIODE GEN PURP 200V 20A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

200 V

20A

1.2 V @ 20 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 150°C

TST30U60CW

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 15A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

60 V

15A

580 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

JANTX1N3164IL

Microchip Technology

RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

GB05MPS33-263

GeneSiC Semiconductor

DIODE SIL CARB 3.3KV 14A TO263-7

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 3300 V
Current - Average Rectified (Io): 14A
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 10 µA @ 3000 V
Capacitance @ Vr, F: 288pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Request a Quote

3300 V

14A

3 V @ 5 A

No Recovery Time > 500mA (Io)

0 ns

10 µA @ 3000 V

288pF @ 1V, 1MHz

Surface Mount

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

TO-263-7

-55°C ~ 175°C

TST40L45CW

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 45V 20A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

45 V

20A

590 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 45 V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

JANTXV1N3295R

Microchip Technology

DIODE GEN PURP 100A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

-

100A

1.55 V @ 310 A

Standard Recovery >500ns, > 200mA (Io)

-

10 mA @ 1000 V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C