Diodi - Raddrizzatori - Singoli

MBRH24020

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 240A D67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 240A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 240A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: D-67

JAN1N6843CCU3

Microsemi Corporation

DIODE GEN PURP 50V 300MA U3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 300mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 6ns
• Current - Reverse Leakage @ Vr: 500nA @ 75V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: U3
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: 3-SMD, No Lead

R6001430XXYA

Powerex Inc.

DIODE GEN PURP 1.4KV 300A DO205

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 13µs
• Current - Reverse Leakage @ Vr: 50mA @ 1400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-205AB, DO-9, Stud

JANTX1N5804URS

Microsemi Corporation

DIODE GEN PURP 100V 1A APKG

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: 25pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: A-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: SQ-MELF, A

1N5551

Semtech Corporation

D MET 3A STD 400V

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

pacchetto: -

SFAF1005G C0G

TSC America Inc.

DIODE, SUPER FAST, 10A, 300V, 35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 300V
• Capacitance @ Vr, F: 140pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2 Full Pack

MBR1045MFST1G

ON Semiconductor

DIODE SCHOTTKY 45V 10A 5DFN

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN, 5 Leads
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: 8-PowerTDFN, 5 Leads

UGE5JT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 30µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2

10MQ040NTR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1.5A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 540mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

RGP10J-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

V10KM120DUHM3/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 5A DUAL FLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 890mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: 450pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 175°C

pacchetto: 8-PowerTDFN

HS3K R7G

TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 800V,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

SBRT2U45LP-7

Diodes Incorporated

DIODE SBR 45V 2A 3DFN

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 3-UDFN
• Supplier Device Package: X1-DFN1411-3
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: 3-UDFN

1N4148W-HE3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 150mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: SOD-123

1N2056

Solid State Inc.

DIODE GEN PURP 150V 275A DO9

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 275A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 75 µA @ 150 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-9
• Operating Temperature - Junction: -65°C ~ 190°C

pacchetto: -

Request a Quote

S2KALH

Taiwan Semiconductor Corporation

2A, 800V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 800 V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

MSASC150W50A

Microchip Technology

DIODE SCHOTTKY 50V 150A THINKEY3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 mA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: ThinKey™3
• Supplier Device Package: ThinKey™3
• Operating Temperature - Junction: -

pacchetto: -

Request a Quote

JANTXV1N6305R

Microchip Technology

DIODE GEN PURP 100V 70A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60 ns
• Current - Reverse Leakage @ Vr: 25 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5 (DO-203AB)
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

VS-80EBU04HN4

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 80A POWERTAB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 80A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 87 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: PowerTab®
• Supplier Device Package: PowerTab®
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Request a Quote

JAN1N1126A

Microchip Technology

DIODE GEN PURP 400V DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA (DO-4)
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

C6D04065A

Wolfspeed, Inc.

DIODE SIL CARB 650V 4A TO220-2

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 4 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -

pacchetto: -

PU3BC

Taiwan Semiconductor Corporation

25NS, 3A, 100V, ULTRA FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 100 V
• Capacitance @ Vr, F: 47pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

ACDBQC70-HF

Comchip Technology

DIODE SCHOTTKY 70V 70MA 0402C

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70 V
• Current - Average Rectified (Io): 70mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 50 V
• Capacitance @ Vr, F: 2pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 0402 (1006 Metric)
• Supplier Device Package: 0402C/SOD-923F
• Operating Temperature - Junction: -65°C ~ 125°C

pacchetto: -

JANTXV1N6941UTK3AS-TR

Microchip Technology

DIODE SCHOTTKY 30V 150A THINKEY3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 mA @ 30 V
• Capacitance @ Vr, F: 7500pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: ThinKey™3
• Supplier Device Package: ThinKey™3
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

US1DH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

RF05VYM1SFHTR

Rohm Semiconductor

DIODE GEN PURP 100V 500MA TUMD2M

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: TUMD2M
• Operating Temperature - Junction: 150°C (Max)

pacchetto: -

D405N26EXPSA1

Infineon Technologies

RECTIFIER DIODE DISC

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

pacchetto: -

Request a Quote

CGRB206-HF

Comchip Technology

DIODE GEN PURP 800V 2A DO214AA S

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB/DO-214AA
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote