Pagina 1847 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTXV1N5418US	Microsemi Corporation	DIODE GEN PURP 400V 3A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: SQ-MELF, B	Azione2.912	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
121NQ035R-1	SMC Diode Solutions	DIODE SCHOTTKY 35V 120A PRM1-1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 35V Capacitance @ Vr, F: 5200pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: PRM1-1 (Half Pak Module) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: HALF-PAK	Azione2.976	35V	120A	650mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 35V	5200pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 150°C
1N5809US	Semtech Corporation	D MET 6A SFST 100V SM Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione5.424	-	-	-	-	-	-	-	-	-	-	-
MBR6020R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 20V DO5 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-203AB, DO-5, Stud	Azione6.320	20V	60A	650mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 20V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
VB30120SG-E3/8W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 30A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione3.056	120V	30A	1.28V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-40°C ~ 150°C
V15P45-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 15A 45V TO-277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 4.8A (DC) Voltage - Forward (Vf) (Max) @ If: 580mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-277, 3-PowerDFN	Azione4.672	45V	4.8A (DC)	580mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 45V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
V12P10HM3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 3.9A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 830mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-277, 3-PowerDFN	Azione6.080	120V	3.9A	830mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
BYV29X-600AQ	WeEn Semiconductors	BYV29X-600A/TO-220F/STANDARD M Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione3.808	-	-	-	-	-	-	-	-	-	-	-
EN 01ZV	Sanken	DIODE GEN PURP 200V 1.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: Axial	Azione7.952	200V	1.5A	920mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	10µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
HS5K M6G	TSC America Inc.	DIODE, HIGH EFFICIENT, 5A, 800V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AB, SMC	Azione2.720	800V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
ES2D-E3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AA, SMB	Azione5.744	200V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 200V	18pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS1DL RFG	TSC America Inc.	DIODE, FAST, 0.8A, 200V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione3.744	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1PS76SB21F	Nexperia USA Inc.	1PS76SB21/SOD323/SOD2 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione6.496	-	-	-	-	-	-	-	-	-	-	-
BAS33-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 30V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1nA @ 15V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-204AH, DO-35, Axial	Azione6.176	30V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	1nA @ 15V	3pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N5806C.TR	Semtech Corporation	DIODE GEN PURP 150V 2.5A AXIAL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione6.720	-	-	-	-	-	-	-	-	-	-	-
RB161MM-20TR	Rohm Semiconductor	DIODE SCHOTTKY 25V 1A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 350mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 125°C (Max)	pacchetto: SOD-123F	Azione5.248	25V	1A	350mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 20V	-	Surface Mount	SOD-123F	PMDU	125°C (Max)
BAS17,215	Nexperia USA Inc.	DIODE LOW VLTG STABISTOR SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 5V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 960mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 4V Capacitance @ Vr, F: 140pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23) Operating Temperature - Junction: 150°C (Max)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione4.240	5V	200mA (DC)	960mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 4V	140pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
JANS1N3595US	Microsemi Corporation	DIODE GEN PURP 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 1nA @ 125V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: SQ-MELF, B	Azione14.616	-	200mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
EGP20A-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-204AC, DO-15, Axial	Azione5.392	50V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	70pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 150°C
SJPB-D6VR	Sanken	DIODE SCHOTTKY 60V 1A SJP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: 2-SMD, J-Lead	Azione6.080	60V	1A	680mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	2-SMD, J-Lead	2-SMD	-40°C ~ 150°C
SD1206S020S0R5	KYOCERA AVX	SCHOTTKY DIODES Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 420 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: -	Request a Quote	20 V	500mA	420 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 20 V	-	Surface Mount	1206 (3216 Metric)	1206	-55°C ~ 125°C
SS210HE3-LTP	Micro Commercial Co	DIODE SCHOTTKY 100V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione5.718	100 V	2A	850 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	70pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
NRVTS8100MFST1G	onsemi	DIODE SCHOTTKY 100V 8A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	100 V	8A	730 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	70 µA @ 100 V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 150°C
1N6941UTK3-TR	Microchip Technology	DIODE SCHOTTKY 30V 150A THINKEY3 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 30 V Capacitance @ Vr, F: 7500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Request a Quote	30 V	150A	500 mV @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 30 V	7500pF @ 5V, 1MHz	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 150°C
MURS140	Good-Ark Semiconductor	RECTIFIER, ULTRA-FAST/HIGH EFFIC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Azione25.080	400 V	2A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
PG300R_R2_00001	Panjit International Inc.	DIODE GEN PURP 50V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 50 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	50 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 50 V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
RS1008FL_R1_00001	Panjit International Inc.	DIODE GEN PURP 800V 1A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione31.770	800 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	1 µA @ 800 V	9pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
B360BE-13	Diodes Incorporated	DIODE SCHOTTKY 60V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 60 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	60 V	3A	650 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	110pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C

JANTXV1N5418US

Microsemi Corporation

DIODE GEN PURP 400V 3A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: SQ-MELF, B

Azione2.912

400V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 400V

-

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 175°C

121NQ035R-1

SMC Diode Solutions

DIODE SCHOTTKY 35V 120A PRM1-1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 120A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 35V
Capacitance @ Vr, F: 5200pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: PRM1-1 (Half Pak Module)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: HALF-PAK

Azione2.976

35V

120A

650mV @ 120A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 35V

5200pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

PRM1-1 (Half Pak Module)

-55°C ~ 150°C

1N5809US

Semtech Corporation

D MET 6A SFST 100V SM

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione5.424

-

MBR6020R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 20V DO5

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-203AB, DO-5, Stud

Azione6.320

20V

60A

650mV @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 20V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

VB30120SG-E3/8W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 30A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione3.056

120V

30A

1.28V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 120V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-40°C ~ 150°C

V15P45-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15A 45V TO-277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 4.8A (DC)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

Azione4.672

45V

4.8A (DC)

580mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 45V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

V12P10HM3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 3.9A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 830mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

Azione6.080

120V

3.9A

830mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 120V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

BYV29X-600AQ

WeEn Semiconductors

BYV29X-600A/TO-220F/STANDARD M

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione3.808

-

EN 01ZV

Sanken

DIODE GEN PURP 200V 1.5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: Axial

Azione7.952

200V

1.5A

920mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

10µA @ 200V

-

Through Hole

Axial

-

-40°C ~ 150°C

HS5K M6G

TSC America Inc.

DIODE, HIGH EFFICIENT, 5A, 800V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

Azione2.720

800V

5A

1.7V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 800V

50pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

ES2D-E3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AA, SMB

Azione5.744

200V

2A

900mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 200V

18pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

RS1DL RFG

TSC America Inc.

DIODE, FAST, 0.8A, 200V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione3.744

200V

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

1PS76SB21F

Nexperia USA Inc.

1PS76SB21/SOD323/SOD2

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione6.496

-

BAS33-TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 30V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1nA @ 15V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-204AH, DO-35, Axial

Azione6.176

30V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

1nA @ 15V

3pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

1N5806C.TR

Semtech Corporation

DIODE GEN PURP 150V 2.5A AXIAL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione6.720

-

RB161MM-20TR

Rohm Semiconductor

DIODE SCHOTTKY 25V 1A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 350mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 700µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 125°C (Max)

pacchetto: SOD-123F

Azione5.248

25V

1A

350mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

700µA @ 20V

-

Surface Mount

SOD-123F

PMDU

125°C (Max)

BAS17,215

Nexperia USA Inc.

DIODE LOW VLTG STABISTOR SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 5V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 960mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 4V
Capacitance @ Vr, F: 140pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Operating Temperature - Junction: 150°C (Max)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione4.240

5V

200mA (DC)

960mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 4V

140pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

150°C (Max)

JANS1N3595US

Microsemi Corporation

DIODE GEN PURP 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 1nA @ 125V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SQ-MELF, B

Azione14.616

-

200mA (DC)

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

3µs

1nA @ 125V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 150°C

EGP20A-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-204AC, DO-15, Axial

Azione5.392

50V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

70pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 150°C

SJPB-D6VR

Sanken

DIODE SCHOTTKY 60V 1A SJP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: 2-SMD, J-Lead

Azione6.080

60V

1A

680mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Surface Mount

2-SMD, J-Lead

2-SMD

-40°C ~ 150°C

SD1206S020S0R5

KYOCERA AVX

SCHOTTKY DIODES

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: -

Request a Quote

20 V

500mA

420 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 20 V

-

Surface Mount

1206 (3216 Metric)

1206

-55°C ~ 125°C

SS210HE3-LTP

Micro Commercial Co

DIODE SCHOTTKY 100V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione5.718

100 V

2A

850 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

70pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

NRVTS8100MFST1G

onsemi

DIODE SCHOTTKY 100V 8A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

100 V

8A

730 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

70 µA @ 100 V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 150°C

1N6941UTK3-TR

Microchip Technology

DIODE SCHOTTKY 30V 150A THINKEY3

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Capacitance @ Vr, F: 7500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

30 V

150A

500 mV @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 mA @ 30 V

7500pF @ 5V, 1MHz

Surface Mount

ThinKey™3

-65°C ~ 150°C

MURS140

Good-Ark Semiconductor

RECTIFIER, ULTRA-FAST/HIGH EFFIC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Azione25.080

400 V

2A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 400 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

PG300R_R2_00001

Panjit International Inc.

DIODE GEN PURP 50V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

50 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

1 µA @ 50 V

60pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

RS1008FL_R1_00001

Panjit International Inc.

DIODE GEN PURP 800V 1A SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione31.770

800 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

1 µA @ 800 V

9pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

B360BE-13

Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

60 V

3A

650 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 60 V

110pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 150°C