Pagina 1812 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  1.812/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
MA3J70000L
Panasonic Electronic Components

DIODE SCHOTTKY 40V 500MA SMINI3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 100µA @ 35V
  • Capacitance @ Vr, F: 60pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F1
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: SC-85
Azione4.272
40V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
5ns
100µA @ 35V
60pF @ 0V, 1MHz
Surface Mount
SC-85
SMini3-F1
125°C (Max)
MDO500-14N1
IXYS

DIODE MODULE 1.4KV 560A Y1-CU

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 560A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30mA @ 1400V
  • Capacitance @ Vr, F: 762pF @ 400V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
  • Supplier Device Package: Y1-CU
  • Operating Temperature - Junction: -
pacchetto: Y1-CU
Azione4.016
1400V
560A
1.3V @ 1200A
Standard Recovery >500ns, > 200mA (Io)
-
30mA @ 1400V
762pF @ 400V, 1MHz
Chassis Mount
Y1-CU
Y1-CU
-
SD41
GeneSiC Semiconductor

DIODE SCHOTTKY 35V 30A DO4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 680mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-203AA, DO-4, Stud
Azione3.312
35V
30A
680mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 35V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-55°C ~ 150°C
RFN20TF6S
Rohm Semiconductor

DIODE GEN PURP 600V 20A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-220-2
Azione3.728
600V
20A
1.55V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 600V
-
Through Hole
TO-220-2
TO-220NFM
150°C (Max)
UPS6150E3/TR13
Microsemi Corporation

DIODE SCHOTTKY 150V 6A POWERMITE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-216AA
Azione4.976
150V
6A
750mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-216AA
Powermite
-55°C ~ 150°C
RS2AHE3_A/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1.5A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione7.248
50V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
P300G-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: DO-201AD, Axial
Azione6.416
400V
3A
1.2V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 400V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
RGL41BHE3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-213AB, MELF (Glass)
Azione2.112
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
15pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
EGP10A-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 22pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione6.608
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
22pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
GP10M-4007HE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -
pacchetto: DO-204AL, DO-41, Axial
Azione3.568
1000V
1A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-
MCL101C-TR3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 30MA MICROMLF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 30mA
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200nA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: MicroMELF
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: 2-SMD, No Lead
Azione2.544
40V
30mA
900mV @ 15mA
Fast Recovery =< 500ns, > 200mA (Io)
-
200nA @ 30V
-
Surface Mount
2-SMD, No Lead
MicroMELF
-65°C ~ 150°C
BAT54-E3-18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.608
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
125°C (Max)
SBR1A400P1-7
Diodes Incorporated

DIODE SBR 1A PDI123

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85ns
  • Current - Reverse Leakage @ Vr: 50µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: POWERDI?123
  • Supplier Device Package: PowerDI? 123
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: POWERDI?123
Azione28.644
400V
1A
1.1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
50µA @ 400V
-
Surface Mount
POWERDI?123
PowerDI? 123
-65°C ~ 150°C
hot ISL9R860PF2
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 8A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-2 Full Pack
Azione314.880
600V
8A
2.4V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
100µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-55°C ~ 150°C
TBAT54S,LM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 140MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 140mA
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1.5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione151.950
30V
140mA
580mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
1.5ns
2µA @ 25V
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
-55°C ~ 150°C
S2Y
S2Y
Diotec Semiconductor

DIODE GEN PURP 2KV 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 2 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: -
Request a Quote
2000 V
2A
1.15 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
5 µA @ 2 V
-
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-50°C ~ 150°C
JANTXV1N3913R
Microchip Technology

DIODE GEN PURP 400V 30A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
400 V
30A
1.4 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-65°C ~ 150°C
1N6621U-TR
Microchip Technology

DIODE GP 440V 1.2A A SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 440 V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 440 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
440 V
1.2A
1.4 V @ 1.2 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
500 nA @ 440 V
-
Surface Mount
SQ-MELF, A
A, SQ-MELF
-65°C ~ 150°C
BAV5004WSQ-7
Diodes Incorporated

DIODE GEN PURP 400V 300MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 240 V
  • Capacitance @ Vr, F: 0.9pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
400 V
300mA
1.29 V @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
1 µA @ 240 V
0.9pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 150°C
ES1JF-T
Taiwan Semiconductor Corporation

35NS, 1A, 600V, SUPER FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione22.500
600 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
7pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF
-55°C ~ 150°C
S8KC
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 8A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 48pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione7.074
800 V
8A
-
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 800 V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
PE2BBH
Taiwan Semiconductor Corporation

20NS, 2A, 100V, ULTRA FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 100 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione18.000
100 V
2A
900 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
20 ns
2 µA @ 100 V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
SS34-HF
Comchip Technology

DIODE SCHOTTKY 40V 3A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: 450pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Azione113.025
40 V
3A
550 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
450pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
FFSM0865B
onsemi

DIODE SIL CARB 650V 11.6A 4PQFN

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 11.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Capacitance @ Vr, F: 336pF @ 1V, 100kHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: 4-PQFN (8x8)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
650 V
11.6A
1.7 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 650 V
336pF @ 1V, 100kHz
Surface Mount
4-PowerTSFN
4-PQFN (8x8)
-55°C ~ 175°C
DLA10IM800UC-TUB
IXYS

DIODE GEN PURP 800V 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 3pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
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800 V
10A
1.22 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 800 V
3pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
1N4152-BK
Central Semiconductor Corp

DIODE GEN PURP 40V 150MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 50 nA @ 40 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: -
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40 V
150mA
880 mV @ 20 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
50 nA @ 40 V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 200°C
HER302G
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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100 V
3A
1 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 100 V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
DSK120
MDD

DIODE SCHOTTKY 200V 1A SOD123FL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
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200 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 200 V
80pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 125°C