Pagina 1799 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  1.799/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SB5400-A
Diodes Incorporated

DIODE SCHOTTKY 5A DO201AD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Azione6.224
-
-
-
-
-
-
-
-
-
-
-
RGP02-18EHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.8KV 500MA DO204

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione7.888
1800V
500mA
1.8V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 1800V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
PR2001G-T
Diodes Incorporated

DIODE GEN PURP 50V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-204AC, DO-15, Axial
Azione4.208
50V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-65°C ~ 150°C
SCS110KGC
Rohm Semiconductor

DIODE SCHOTTKY 1.2KV 10A TO220AC

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Capacitance @ Vr, F: 650pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: TO-220-2
Azione4.480
1200V
10A (DC)
1.75V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 1200V
650pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
175°C (Max)
hot JANTX1N5811
Microsemi Corporation

DIODE GEN PURP 150V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: B, Axial
Azione3.712
150V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 150V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
VS-12FLR100S05
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 12A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 50µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-203AA, DO-4, Stud
Azione7.296
1000V
12A
1.4V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
50µA @ 1000V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 150°C
LSM545G/TR13
Microsemi Corporation

DIODE SCHOTTKY 45V 5A DO215AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: DO-215AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-215AB, SMC Gull Wing
Azione3.504
45V
5A
520mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 45V
-
Surface Mount
DO-215AB, SMC Gull Wing
DO-215AB
-55°C ~ 150°C
VS-8TQ100SHM3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550µA @ 80V
  • Capacitance @ Vr, F: 500pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.280
100V
8A
720mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
550µA @ 80V
500pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-55°C ~ 175°C
AR3PK-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 120ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 34pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione5.056
800V
1.6A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
10µA @ 800V
34pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
hot UF3003-T
Diodes Incorporated

DIODE GEN PURP 200V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 75pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-201AD, Axial
Azione28.800
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
75pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
AG01AV0
Sanken

DIODE GEN PURP 600V 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 600mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: Axial
Azione3.152
600V
500mA
1.8V @ 600mA
Fast Recovery =< 500ns, > 200mA (Io)
100ns
100µA @ 600V
-
Through Hole
Axial
Axial
-40°C ~ 150°C
MBR1045STR
SMC Diode Solutions

DIODE SCHOTTKY 45V 10A TO277B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277B
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-277, 3-PowerDFN
Azione6.688
45V
10A
500mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277B
-55°C ~ 150°C
HS3B R7G
TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 100V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione7.360
100V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
SS16L RUG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 6

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione5.728
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS110L RQG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione2.752
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
FR105G B0G
TSC America Inc.

DIODE, FAST, 1A, 600V, 250NS, DO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione7.600
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
S15JLWHRVG
TSC America Inc.

DIODE, 1.5A, 600V, AEC-Q101, SOD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD123W
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: SOD-123W
Azione4.800
600V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
1N6640US
Microsemi Corporation

DIODE GEN PURP 75V 300MA D5D

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 300mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, D
  • Supplier Device Package: D-5D
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: SQ-MELF, D
Azione5.392
75V
300mA (DC)
1V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 50V
-
Surface Mount
SQ-MELF, D
D-5D
-65°C ~ 175°C
hot BAQ35-GS08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 140V 200MA SOD80

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 140V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1nA @ 60V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80 MiniMELF
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: DO-213AC, MINI-MELF, SOD-80
Azione570.000
140V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
1nA @ 60V
3pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80 MiniMELF
175°C (Max)
BAT54W,115
Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA SOT323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-70, SOT-323
Azione295.716
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323-3
150°C (Max)
B3100BE-13
Diodes Incorporated

DIODE SCHOTTKY 100V 3A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 100 V
  • Capacitance @ Vr, F: 105pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione16.638
100 V
3A
790 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 100 V
105pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
ES3DPX
Nexperia USA Inc.

DIODE GP 200V 3A SOD128/CFP5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 200 V
  • Capacitance @ Vr, F: 27pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128/CFP5
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: -
Request a Quote
200 V
3A
980 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
200 nA @ 200 V
27pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128/CFP5
150°C (Max)
LSIC2SD065C20A
Littelfuse Inc.

DIODE SIL CARB 650V 45A TO252

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 960pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
650 V
45A
1.8 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
960pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
-55°C ~ 175°C
SF33G-AP
Micro Commercial Co

DIODE GEN PURP 150V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
150 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 150 V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
PUAD8BH
Taiwan Semiconductor Corporation

19NS, 8A, 100V, ULTRA FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 100 V
  • Capacitance @ Vr, F: 101pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: ThinDPAK
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione13.500
100 V
8A
1 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
2 µA @ 100 V
101pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
ThinDPAK
-55°C ~ 175°C
UES705R
Microchip Technology

RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
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R4260
Microchip Technology

DIODE GP REV 600V 125A DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 125A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: -
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600 V
125A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 600 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
FESB16DTHM3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 16A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 175pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
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200 V
16A
975 mV @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 200 V
175pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-65°C ~ 150°C