Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE STD REC 400V 5A
|
pacchetto: B, Axial |
Azione5.968 |
|
400V | 5A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione3.440 |
|
400V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 300MA B-MELF
|
pacchetto: SQ-MELF, B |
Azione5.488 |
|
50V | 300mA | 1.1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 100nA @ 50V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 600V 10A TO220FM
|
pacchetto: TO-220-2 |
Azione4.912 |
|
600V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 430pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220FM | 150°C (Max) |
||
GeneSiC Semiconductor |
DIODE GEN PURP 800V 30A DO5
|
pacchetto: DO-203AB, DO-5, Stud |
Azione3.536 |
|
800V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
||
GeneSiC Semiconductor |
DIODE GEN PURP 50V 35A DO203AB
|
pacchetto: DO-203AB, DO-5, Stud |
Azione7.344 |
|
50V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.072 |
|
400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
||
Sanken |
DIODE GEN PURP 600V 1.2A AXIAL
|
pacchetto: Axial |
Azione6.336 |
|
600V | 1.2A | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
||
TSC America Inc. |
DIODE, SUPER FAST, 3A, 200V, 35N
|
pacchetto: DO-201AD, Axial |
Azione2.816 |
|
200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
ON Semiconductor |
DIODE GEN PURP 400V 1A SMB
|
pacchetto: DO-214AA, SMB |
Azione2.640 |
|
400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 400V | - | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 175°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 9
|
pacchetto: DO-214AC, SMA |
Azione6.624 |
|
90V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 1A SFLAT
|
pacchetto: SOD-123F |
Azione3.680 |
|
600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione4.128 |
|
200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
||
TSC America Inc. |
DIODE, SUPER FAST, 1A, 300V, 35N
|
pacchetto: DO-219AB |
Azione2.384 |
|
300V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 8pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 0.5A,
|
pacchetto: DO-204AL, DO-41, Axial |
Azione5.584 |
|
40V | 500mA | 550mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 125°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 800V,
|
pacchetto: DO-204AL, DO-41, Axial |
Azione5.776 |
|
800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, 1.5A, 800V, DO-15
|
pacchetto: DO-204AC, DO-15, Axial |
Azione5.552 |
|
800V | 1.5A | 1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 3A, 100V,
|
pacchetto: DO-214AA, SMB |
Azione7.712 |
|
100V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 250MA SOD80
|
pacchetto: DO-213AC, MINI-MELF, SOD-80 |
Azione3.856 |
|
100V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 150V | 1.5pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
||
WeEn Semiconductors |
DIODE GEN PURP 600V 15A TO220AC
|
pacchetto: TO-220-2 |
Azione51.042 |
|
600V | 15A | 1.38V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
||
Microchip Technology |
DIODE GEN PURP 200V 8A TO257
|
pacchetto: - |
Request a Quote |
|
200 V | 8A | 1.06 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 160 V | 150pF @ 5V, 1MHz | Through Hole | TO-257-3 | TO-257 | - |
||
Microchip Technology |
RECTIFIER
|
pacchetto: - |
Request a Quote |
|
200 V | 70A | 1.25 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 200 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 200°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 8A TO263AB
|
pacchetto: - |
Request a Quote |
|
600 V | 8A | 1.75 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 30 µA @ 600 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 2A DO214AC
|
pacchetto: - |
Azione10.962 |
|
60 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Diodes Incorporated |
STANDARD RECOVERY RECTIFIER SMA
|
pacchetto: - |
Request a Quote |
|
600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 5 µA @ 600 V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
||
Microchip Technology |
DIODE GP 150V 300MA B SQ-MELF
|
pacchetto: - |
Request a Quote |
|
150 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 150 V | 2.5pF @ 0V, 1MHz | Surface Mount | DO-213AB, MELF | B, SQ-MELF | -65°C ~ 175°C |
||
NTE Electronics, Inc |
DIODE GP 400V 500MA DO213AA
|
pacchetto: - |
Request a Quote |
|
400 V | 500mA | 1.2 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
||
Microchip Technology |
DIODE GEN PURP 1A A SQ-MELF
|
pacchetto: - |
Request a Quote |
|
- | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | - | - | Surface Mount | SQ-MELF, A | A, SQ-MELF | -65°C ~ 175°C |